AU2001250149A1 - Thermoelectric element - Google Patents

Thermoelectric element

Info

Publication number
AU2001250149A1
AU2001250149A1 AU2001250149A AU5014901A AU2001250149A1 AU 2001250149 A1 AU2001250149 A1 AU 2001250149A1 AU 2001250149 A AU2001250149 A AU 2001250149A AU 5014901 A AU5014901 A AU 5014901A AU 2001250149 A1 AU2001250149 A1 AU 2001250149A1
Authority
AU
Australia
Prior art keywords
thermoelectric element
thermoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001250149A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001250149A1 publication Critical patent/AU2001250149A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4918Disposition being disposed on at least two different sides of the body, e.g. dual array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93Thermoelectric, e.g. peltier effect cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
AU2001250149A 2000-05-02 2001-04-25 Thermoelectric element Abandoned AU2001250149A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AT0076300A AT410492B (en) 2000-05-02 2000-05-02 THERMOELECTRIC ELEMENT WITH AT LEAST ONE N LAYER AND AT LEAST ONE P LAYER
AT763/2000 2000-05-02
PCT/AT2001/000123 WO2001084641A1 (en) 2000-05-02 2001-04-25 Thermoelectric element

Publications (1)

Publication Number Publication Date
AU2001250149A1 true AU2001250149A1 (en) 2001-11-12

Family

ID=3680572

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001250149A Abandoned AU2001250149A1 (en) 2000-05-02 2001-04-25 Thermoelectric element

Country Status (10)

Country Link
US (1) US6762484B2 (en)
EP (1) EP1287566B1 (en)
JP (1) JP3921602B2 (en)
KR (1) KR100581978B1 (en)
CN (1) CN100352073C (en)
AT (1) AT410492B (en)
AU (1) AU2001250149A1 (en)
DE (1) DE50100847D1 (en)
RU (1) RU2248647C2 (en)
WO (1) WO2001084641A1 (en)

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US6828579B2 (en) * 2001-12-12 2004-12-07 Hi-Z Technology, Inc. Thermoelectric device with Si/SiC superlattice N-legs
US7038234B2 (en) * 2001-12-12 2006-05-02 Hi-Z Technology, Inc. Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
WO2006005126A1 (en) * 2004-07-12 2006-01-19 Newsouth Innovations Pty Limited Reversible thermoelectric nanomaterials
US20060048809A1 (en) * 2004-09-09 2006-03-09 Onvural O R Thermoelectric devices with controlled current flow and related methods
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
DE102005036407A1 (en) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Evaluation unit for continuous thermocouples
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
AT505168B1 (en) 2007-06-29 2008-11-15 Span Gerhard Dipl Ing Dr THERMOELECTRIC ELEMENT
US8283553B1 (en) 2007-09-21 2012-10-09 Hrl Laboratories, Llc Photon enhanced thermoelectric power generation
DE102007050741A1 (en) * 2007-10-22 2009-04-23 O-Flexx Technologies Gmbh Thermoelectric generator
DE102008032856A1 (en) 2008-07-14 2010-01-28 O-Flexx Technologies Gmbh Heat exchanger for a thermoelectric thin-film element
DE102009032906A1 (en) * 2009-07-10 2011-01-20 O-Flexx Technologies Gmbh Module with several thermoelectric elements
JP5560610B2 (en) * 2009-08-26 2014-07-30 富士通株式会社 Power generation device and power generation system provided with such power generation device
DE102009048985A1 (en) 2009-10-09 2011-04-21 O-Flexx Technologies Gmbh Module with several thermoelectric elements
DE102010005340A1 (en) 2010-01-21 2011-07-28 O-Flexx Technologies GmbH, 47228 Method and device for structuring a layer arranged on a substrate
KR101701349B1 (en) * 2010-06-10 2017-02-01 엘지이노텍 주식회사 Cooling thermoelectric element and method of manufacturing method of the same
WO2012006301A1 (en) * 2010-07-07 2012-01-12 Dynamic Connections, Llc Renewable energy extraction
FR2963165A1 (en) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 METHOD FOR GENERATING ELECTRIC ENERGY IN A SEMICONDUCTOR DEVICE, AND CORRESPONDING DEVICE
FR2968134B1 (en) 2010-11-26 2013-05-17 Schneider Electric Ind Sas THERMOELECTRIC MODULE WITH IMPROVED YIELD
RU2444814C1 (en) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Thermoelectric cluster, method of its operation, device to connect active element in it with heat power line, generator (versions) and heat pump (versions) on its basis
DE102011001653A1 (en) 2011-03-30 2012-10-04 O-Flexx Technologies Gmbh Thermoelectric arrangement
CN102779936A (en) * 2011-05-12 2012-11-14 冯建明 PN junction tetrode type thermoelectric conversion and refrigeration and heating device
RU2477828C1 (en) * 2011-10-25 2013-03-20 Святослав Михайлович Сергеев Thermal diode
DE102012209619A1 (en) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelectric element for converting energy between thermal energy and electrical energy and a method for disassembling the thermoelectric element
WO2014114559A1 (en) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelectric component, methods for the production thereof, and thermoelectric generator
WO2014114366A1 (en) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelectric element and method for the production thereof
RU2576414C2 (en) * 2014-05-21 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" Cooling device
CN106876569B (en) * 2015-12-10 2019-04-23 廖建能 Electrothermal module
WO2018022922A1 (en) * 2016-07-27 2018-02-01 Novus Energy Technologies, Inc. Thermoelectric heat pump system
JP2020088028A (en) * 2018-11-19 2020-06-04 トヨタ自動車株式会社 Thermoelectric conversion element, thermoelectric conversion system, and power generation method using them
UA120025C2 (en) 2019-03-26 2019-09-10 Андрій Дмитрович Хворостяний SEMICONDUCTOR THERMOELECTRIC GENERATOR
DE102021209656B3 (en) 2021-09-02 2022-09-29 Nikolay Iosad Thermoelectric element, thermoelectric generator and method for their manufacture
DE102023104908A1 (en) 2023-02-28 2024-08-29 Nikolay Iosad Thermoelectric elements, thermoelectric modules and processes for their manufacture

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US2981775A (en) * 1958-11-12 1961-04-25 Steatite Res Corp Oxide thermocouple device
US3564860A (en) * 1966-10-13 1971-02-23 Borg Warner Thermoelectric elements utilizing distributed peltier effect
IT1042975B (en) * 1975-09-30 1980-01-30 Snam Progetti METHOD FOR THE CONSTRUCTION OF A THERMOELECTRIC MODULE AND MODULE SO OBTAINED
JPS571276A (en) * 1980-06-02 1982-01-06 Tdk Corp Thermoelectric element and manufacture thereof
JPS57169283A (en) * 1981-04-11 1982-10-18 Tdk Corp Thermoelectric element
JPS59980A (en) * 1982-06-26 1984-01-06 Tdk Corp Thermoelectric element
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US5009717A (en) * 1989-07-18 1991-04-23 Mitsubishi Metal Corporation Thermoelectric element and method of manufacturing same
JPH0463481A (en) * 1990-03-08 1992-02-28 Mitsubishi Materials Corp Insulating film coated type thermoelectric generator and manufacture thereof
GB2267995B (en) * 1992-06-17 1995-11-08 Harold Aspden Thermoelectric heat transfer apparatus
JPH0738158A (en) * 1993-07-16 1995-02-07 Vacuum Metallurgical Co Ltd Integral sintered silicon germanium thermoelectric conversion device and manufacture thereof
US5834828A (en) * 1993-09-20 1998-11-10 The United States Of America, As Represented By The Secretary Of The Army Nanoporous semiconductor material and fabrication technique for use as thermoelectric elements
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Also Published As

Publication number Publication date
KR100581978B1 (en) 2006-05-23
JP2003533031A (en) 2003-11-05
EP1287566B1 (en) 2003-10-22
EP1287566A1 (en) 2003-03-05
CN1441972A (en) 2003-09-10
CN100352073C (en) 2007-11-28
DE50100847D1 (en) 2003-11-27
ATA7632000A (en) 2002-09-15
JP3921602B2 (en) 2007-05-30
RU2248647C2 (en) 2005-03-20
US6762484B2 (en) 2004-07-13
WO2001084641A1 (en) 2001-11-08
US20030042497A1 (en) 2003-03-06
KR20020093070A (en) 2002-12-12
AT410492B (en) 2003-05-26

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