AU2001250149A1 - Thermoelectric element - Google Patents
Thermoelectric elementInfo
- Publication number
- AU2001250149A1 AU2001250149A1 AU2001250149A AU5014901A AU2001250149A1 AU 2001250149 A1 AU2001250149 A1 AU 2001250149A1 AU 2001250149 A AU2001250149 A AU 2001250149A AU 5014901 A AU5014901 A AU 5014901A AU 2001250149 A1 AU2001250149 A1 AU 2001250149A1
- Authority
- AU
- Australia
- Prior art keywords
- thermoelectric element
- thermoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/93—Thermoelectric, e.g. peltier effect cooling
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0076300A AT410492B (en) | 2000-05-02 | 2000-05-02 | THERMOELECTRIC ELEMENT WITH AT LEAST ONE N LAYER AND AT LEAST ONE P LAYER |
AT763/2000 | 2000-05-02 | ||
PCT/AT2001/000123 WO2001084641A1 (en) | 2000-05-02 | 2001-04-25 | Thermoelectric element |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001250149A1 true AU2001250149A1 (en) | 2001-11-12 |
Family
ID=3680572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001250149A Abandoned AU2001250149A1 (en) | 2000-05-02 | 2001-04-25 | Thermoelectric element |
Country Status (10)
Country | Link |
---|---|
US (1) | US6762484B2 (en) |
EP (1) | EP1287566B1 (en) |
JP (1) | JP3921602B2 (en) |
KR (1) | KR100581978B1 (en) |
CN (1) | CN100352073C (en) |
AT (1) | AT410492B (en) |
AU (1) | AU2001250149A1 (en) |
DE (1) | DE50100847D1 (en) |
RU (1) | RU2248647C2 (en) |
WO (1) | WO2001084641A1 (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6828579B2 (en) * | 2001-12-12 | 2004-12-07 | Hi-Z Technology, Inc. | Thermoelectric device with Si/SiC superlattice N-legs |
US7038234B2 (en) * | 2001-12-12 | 2006-05-02 | Hi-Z Technology, Inc. | Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs |
WO2006005126A1 (en) * | 2004-07-12 | 2006-01-19 | Newsouth Innovations Pty Limited | Reversible thermoelectric nanomaterials |
US20060048809A1 (en) * | 2004-09-09 | 2006-03-09 | Onvural O R | Thermoelectric devices with controlled current flow and related methods |
US20060090787A1 (en) * | 2004-10-28 | 2006-05-04 | Onvural O R | Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles |
DE102005036407A1 (en) * | 2005-07-29 | 2007-02-01 | Endress + Hauser Wetzer Gmbh + Co. Kg | Evaluation unit for continuous thermocouples |
US20080017238A1 (en) * | 2006-07-21 | 2008-01-24 | Caterpillar Inc. | Thermoelectric device |
AT505168B1 (en) | 2007-06-29 | 2008-11-15 | Span Gerhard Dipl Ing Dr | THERMOELECTRIC ELEMENT |
US8283553B1 (en) | 2007-09-21 | 2012-10-09 | Hrl Laboratories, Llc | Photon enhanced thermoelectric power generation |
DE102007050741A1 (en) * | 2007-10-22 | 2009-04-23 | O-Flexx Technologies Gmbh | Thermoelectric generator |
DE102008032856A1 (en) | 2008-07-14 | 2010-01-28 | O-Flexx Technologies Gmbh | Heat exchanger for a thermoelectric thin-film element |
DE102009032906A1 (en) * | 2009-07-10 | 2011-01-20 | O-Flexx Technologies Gmbh | Module with several thermoelectric elements |
JP5560610B2 (en) * | 2009-08-26 | 2014-07-30 | 富士通株式会社 | Power generation device and power generation system provided with such power generation device |
DE102009048985A1 (en) | 2009-10-09 | 2011-04-21 | O-Flexx Technologies Gmbh | Module with several thermoelectric elements |
DE102010005340A1 (en) | 2010-01-21 | 2011-07-28 | O-Flexx Technologies GmbH, 47228 | Method and device for structuring a layer arranged on a substrate |
KR101701349B1 (en) * | 2010-06-10 | 2017-02-01 | 엘지이노텍 주식회사 | Cooling thermoelectric element and method of manufacturing method of the same |
WO2012006301A1 (en) * | 2010-07-07 | 2012-01-12 | Dynamic Connections, Llc | Renewable energy extraction |
FR2963165A1 (en) * | 2010-07-22 | 2012-01-27 | St Microelectronics Crolles 2 | METHOD FOR GENERATING ELECTRIC ENERGY IN A SEMICONDUCTOR DEVICE, AND CORRESPONDING DEVICE |
FR2968134B1 (en) | 2010-11-26 | 2013-05-17 | Schneider Electric Ind Sas | THERMOELECTRIC MODULE WITH IMPROVED YIELD |
RU2444814C1 (en) * | 2011-03-29 | 2012-03-10 | Юрий Феликсович Верниковский | Thermoelectric cluster, method of its operation, device to connect active element in it with heat power line, generator (versions) and heat pump (versions) on its basis |
DE102011001653A1 (en) | 2011-03-30 | 2012-10-04 | O-Flexx Technologies Gmbh | Thermoelectric arrangement |
CN102779936A (en) * | 2011-05-12 | 2012-11-14 | 冯建明 | PN junction tetrode type thermoelectric conversion and refrigeration and heating device |
RU2477828C1 (en) * | 2011-10-25 | 2013-03-20 | Святослав Михайлович Сергеев | Thermal diode |
DE102012209619A1 (en) | 2012-06-08 | 2013-12-12 | Robert Bosch Gmbh | Thermoelectric element for converting energy between thermal energy and electrical energy and a method for disassembling the thermoelectric element |
WO2014114559A1 (en) | 2013-01-24 | 2014-07-31 | O-Flexx Technologies Gmbh | Thermoelectric component, methods for the production thereof, and thermoelectric generator |
WO2014114366A1 (en) | 2013-01-24 | 2014-07-31 | O-Flexx Technologies Gmbh | Thermoelectric element and method for the production thereof |
RU2576414C2 (en) * | 2014-05-21 | 2016-03-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" | Cooling device |
CN106876569B (en) * | 2015-12-10 | 2019-04-23 | 廖建能 | Electrothermal module |
WO2018022922A1 (en) * | 2016-07-27 | 2018-02-01 | Novus Energy Technologies, Inc. | Thermoelectric heat pump system |
JP2020088028A (en) * | 2018-11-19 | 2020-06-04 | トヨタ自動車株式会社 | Thermoelectric conversion element, thermoelectric conversion system, and power generation method using them |
UA120025C2 (en) | 2019-03-26 | 2019-09-10 | Андрій Дмитрович Хворостяний | SEMICONDUCTOR THERMOELECTRIC GENERATOR |
DE102021209656B3 (en) | 2021-09-02 | 2022-09-29 | Nikolay Iosad | Thermoelectric element, thermoelectric generator and method for their manufacture |
DE102023104908A1 (en) | 2023-02-28 | 2024-08-29 | Nikolay Iosad | Thermoelectric elements, thermoelectric modules and processes for their manufacture |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2981775A (en) * | 1958-11-12 | 1961-04-25 | Steatite Res Corp | Oxide thermocouple device |
US3564860A (en) * | 1966-10-13 | 1971-02-23 | Borg Warner | Thermoelectric elements utilizing distributed peltier effect |
IT1042975B (en) * | 1975-09-30 | 1980-01-30 | Snam Progetti | METHOD FOR THE CONSTRUCTION OF A THERMOELECTRIC MODULE AND MODULE SO OBTAINED |
JPS571276A (en) * | 1980-06-02 | 1982-01-06 | Tdk Corp | Thermoelectric element and manufacture thereof |
JPS57169283A (en) * | 1981-04-11 | 1982-10-18 | Tdk Corp | Thermoelectric element |
JPS59980A (en) * | 1982-06-26 | 1984-01-06 | Tdk Corp | Thermoelectric element |
DE3315960A1 (en) * | 1983-05-02 | 1984-11-08 | Bschorr, Oskar, Dipl.-Ing. Dr.rer.nat., 8000 München | GENERATION OF VOLTAGE DIFFERENCES |
FR2598803B1 (en) * | 1986-05-16 | 1988-09-02 | Anvar | DEVICE FOR MEASURING THE INTENSITY OF A RADIATIVE FLOW |
JPH01208876A (en) * | 1988-02-17 | 1989-08-22 | Matsushita Electric Ind Co Ltd | Thermoelectric device and manufacture thereof |
EP0369670A3 (en) * | 1988-11-18 | 1992-06-03 | Aspden, Harold Dr. | Thermoelectric energy conversion |
US5009717A (en) * | 1989-07-18 | 1991-04-23 | Mitsubishi Metal Corporation | Thermoelectric element and method of manufacturing same |
JPH0463481A (en) * | 1990-03-08 | 1992-02-28 | Mitsubishi Materials Corp | Insulating film coated type thermoelectric generator and manufacture thereof |
GB2267995B (en) * | 1992-06-17 | 1995-11-08 | Harold Aspden | Thermoelectric heat transfer apparatus |
JPH0738158A (en) * | 1993-07-16 | 1995-02-07 | Vacuum Metallurgical Co Ltd | Integral sintered silicon germanium thermoelectric conversion device and manufacture thereof |
US5834828A (en) * | 1993-09-20 | 1998-11-10 | The United States Of America, As Represented By The Secretary Of The Army | Nanoporous semiconductor material and fabrication technique for use as thermoelectric elements |
GB2283361B (en) * | 1993-10-12 | 1997-04-16 | Harold Aspden | Refrigeration and electrical power generation |
US5644184A (en) * | 1996-02-15 | 1997-07-01 | Thermodyne, Inc. | Piezo-pyroelectric energy converter and method |
JP3642885B2 (en) | 1996-06-28 | 2005-04-27 | ジャパンゴアテックス株式会社 | IC chip mounting interposer and IC chip package |
JPH1022530A (en) * | 1996-07-01 | 1998-01-23 | Sumitomo Special Metals Co Ltd | Thermoplastic conversion element |
JPH1022531A (en) * | 1996-07-01 | 1998-01-23 | Sumitomo Special Metals Co Ltd | Thermoelectric converter element |
JPH10144969A (en) * | 1996-11-08 | 1998-05-29 | Sumitomo Special Metals Co Ltd | Thermoelectric conversion element |
US6300150B1 (en) * | 1997-03-31 | 2001-10-09 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
CA2282547C (en) * | 1997-12-27 | 2005-10-18 | Osamu Yamashita | Thermo-electric conversion element |
JPH11195817A (en) * | 1997-12-27 | 1999-07-21 | Sumitomo Special Metals Co Ltd | Thermoelectric conversion element |
-
2000
- 2000-05-02 AT AT0076300A patent/AT410492B/en not_active IP Right Cessation
-
2001
- 2001-04-25 WO PCT/AT2001/000123 patent/WO2001084641A1/en active IP Right Grant
- 2001-04-25 EP EP01923379A patent/EP1287566B1/en not_active Expired - Lifetime
- 2001-04-25 RU RU2002132261/28A patent/RU2248647C2/en not_active IP Right Cessation
- 2001-04-25 KR KR1020027014293A patent/KR100581978B1/en not_active IP Right Cessation
- 2001-04-25 AU AU2001250149A patent/AU2001250149A1/en not_active Abandoned
- 2001-04-25 DE DE50100847T patent/DE50100847D1/en not_active Expired - Lifetime
- 2001-04-25 JP JP2001581354A patent/JP3921602B2/en not_active Expired - Fee Related
- 2001-04-25 CN CNB018089186A patent/CN100352073C/en not_active Expired - Fee Related
-
2002
- 2002-10-25 US US10/280,065 patent/US6762484B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100581978B1 (en) | 2006-05-23 |
JP2003533031A (en) | 2003-11-05 |
EP1287566B1 (en) | 2003-10-22 |
EP1287566A1 (en) | 2003-03-05 |
CN1441972A (en) | 2003-09-10 |
CN100352073C (en) | 2007-11-28 |
DE50100847D1 (en) | 2003-11-27 |
ATA7632000A (en) | 2002-09-15 |
JP3921602B2 (en) | 2007-05-30 |
RU2248647C2 (en) | 2005-03-20 |
US6762484B2 (en) | 2004-07-13 |
WO2001084641A1 (en) | 2001-11-08 |
US20030042497A1 (en) | 2003-03-06 |
KR20020093070A (en) | 2002-12-12 |
AT410492B (en) | 2003-05-26 |
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