WO2014114559A1

WO2014114559A1 - Thermoelectric component, methods for the production thereof, and thermoelectric generator

Info

Publication number: WO2014114559A1
Application number: PCT/EP2014/050832
Authority: WO
Inventors: Gerhard Span
Original assignee: O-Flexx Technologies Gmbh
Priority date: 2013-01-24
Filing date: 2014-01-16
Publication date: 2014-07-31

Abstract

The invention relates to thermoelectric components, comprising a first and a second thermoelectric layer, wherein a p-n junction is formed when the layers are formed. The invention further relates to methods for producing such thermoelectric components. Finally, the invention relates to a thermoelectric generator using the components. In order to create a thermoelectric component that can be produced economically and is suitable for a series connection in a thermoelectric generator, a layer structure comprising the thermoelectric layers, a dielectric layer, and contact layers on a substrate is proposed, wherein the trenches are selectively separated along various trenches during the production.

Description

Thermoelectric component, process for its production and thermoelectric generator

The invention relates to thermoelectric components comprising a first and a second thermoelectric layer, wherein the layers are formed to form a pn junction. Moreover, the invention relates to methods for

Production of such thermoelectric components.

Finally, the invention discloses a thermoelectric generator using the components.

A thermoelectric element with a pn junction is known from EP 1 287 566 B1. In this thermoelectric element is compared with conventional thermoelectric

Achieved a higher efficiency elements, in which the pn junction is formed substantially over the entire extent of the n- and p-layer, wherein a temperature gradient along the pn junction interface is applied. This results in a temperature difference along this elongated pn junction between two ends of the pn layer package, which causes the efficiency of the thermoelectric element significantly higher than at

conventional thermoelectric elements. The

generic thermoelectric element is selectively contacted at the n- and p-layer. This can be done either by

Alloying the contacts and the associated pn-

Transitions or by a direct contacting of the n- and p-layer done. To several generic

Connecting thermoelectric elements to form a module or generator, these are connected in series by cross-guided lines. Thermally, the individual thermoelectric elements of the module are connected in parallel.

Based on this prior art, the invention is based on the object, a thermoelectric component to propose, which is inexpensive to produce and for a series connection in a thermoelectric generator

suitable is. Furthermore, a method for producing a thermoelectric component and a generator with such components should be specified.

The solution is based on the idea of a layer structure comprising the thermoelectric layers, one

dielectric layer and contact layers on one

Substrate, wherein the layers are selectively separated along at least one trench. The layers are in the form of thin layers having a thickness of not more than 150 μm, but preferably not more than 100 μm, and are deposited over the entire area on the substrate.

In detail, this object is achieved by a thermoelectric component having the features of claim 1.

The claims 5, 6, 8 and 9 relate to components that

in particular for an arrangement on a substrate of a thermoelectric generator with the features of claim 12 are determined. The production of the components according to claim 5, 6 is preferably carried out with the method according to claim 7. The production of the components according to claim 8, 9 is preferably carried out with the method according to claim 10.

Claim 2 discloses an embodiment of the component according to claim 1 with a voltage-increasing series connection of several pn or. PN junctions produced by a manufacturing and patterning process as claimed in claim 3.

With the term ditch, the depressions are in the off

Layer composed component resulting from the interruption of single or multiple layers of the layer package along a dividing line. The Dividing lines extend between opposite or adjacent lateral edges of the

Layers package. The dividing lines may have a straight, angled or curved course. In that the dividing lines extend over the entire extent of the component between two lateral edges, the interruptions functionally separate the layers,

For example, the electrical and thermal conductivity of a contact layer in several contacts.

In the manufacturing processes for the components of the deposition process is always over the entire surface over the entire previously deposited layer including any

Interruptions, so that the coating material also on the exposed by the interruptions lower

Layers layers.

Further advantages and effects of the invention will become apparent from the following detailed description of the

Embodiments.

Show it:

Figure 1 is a plan view of a first

Embodiment of the invention

Component in the embodiment according to claim 2 in plan view and the cross sections through the layer structure along the lines A-A and B-B, Figure 2 is a plan view of a second

Embodiment of the component according to the invention in the embodiment according to claim 5 in a layout A, B and C and the

Cross sections through the layer structure along the lines AA in the layouts A, B and C, Figure 3 is a plan view of a third

Embodiment of the component according to the invention in the embodiment according to claim ί in a layout A, B and C and the

Cross sections through the layer structure along the lines A-A in the layouts A, B and C,

Figure 4 is a plan view of a thermoelectric

Generator in the embodiment according to claim 12 comprising thermoelectric components according to

Figure 2, layout A,

Figure 5 is a plan view of a thermoelectric

Figure 2, layout B, as well

Figure 6 is a plan view of a thermoelectric

Figure 2, layout C.

Embodiment 1: The layout of the thermoelectric device and the

corresponding cross sections are shown in Fig. 1. The component has a matrix of pn junctions - also referred to as pn diodes - referred to, which are electrically connected in series. On a substrate 106, for example a wafer, such a matrix of pn diodes is formed by means of trenches (101 to 104) which separate the different layers according to the cross sections A-A and B-B.

For the application, the component is arranged so that all contacts 100 are connected to the heat source and all the contacts 105 are connected to the heat sink, resulting in a thermal Parallel connection and an electrical series circuit results. The two outermost, located on the left and right edge of the component contacts 105 serve the electrical connection to an external electrical load, either directly or under the interposition of a voltage converter,

Performance adjuster, o.a.

The substrate 106 may be made of glass, quartz, ceramic, a

Composite material or a plastic. The

Main requirements are a low thermal and

electric conductivity.

Contact layers 111 and 107 provide electrical contact to thermoelectric layers 110 and 108, respectively, and also provide thermal contact to the pn junction located in trench 104. The contact layers 111 and 107 may be made of metals or a combination of metal and dielectric with high thermal and electrical

Conductivity exist. The contact layers 107, 111 with a chemically inert surface also form the ohmic

Contact with the thermoelectric layers 110 and 108.

As an example, a nickel-coated copper layer provides a good contact layer 107, 111 for thermoelectric

Bi2Te3 based layers 108, 110. Aluminum nitride coated molybdenum is a good material for the

Contact layers 107, 111 for thermoelectric layers 108, 110 based on SiGe. The thermoelectric layers 110 and 108 may be made of Bi 2 Te 3 and its alloys, SiGe and its

Alloys, as well as SiCr2 consist. The doping profiles can vary, so that not only pn junctions but also pin diodes can be formed in the trench 104. The thermoelectric layer 108 is n-type and the layer 110 is p-type or vice versa. The topmost layers of the Thermoelectric layer 108 or 110 may also be intrinsically or very low doped to form a pin diode. A dielectric layer 109 provides electrical isolation between the contact layers 107, 111 to the pn diode to facilitate series electrical connection.

The dielectric layer 109 and the thermoelectric

Layers 108, 110 are separated by the cut 102 to allow electrical contact between two consecutive pn junctions in a series connection.

In cross-section A-A can be seen that the upper

Contact layer 107 of the image in the left pn junction is electrically connected only to the lower contact layer III of the right of it lying pn junction.

In the trench 104, the dielectric layer 109 is absent so that the pn or a p-i-n junction

can train. The dielectric layer 109 should have a high thermal, but a very low electrical

Have conductivity. For the dielectric layer 109, among others, the following materials may be used: SiO, SiO 2, AlN, Al 2 O 3, BaF 2, etc., or a combination thereof. The dielectric layer 109 may consist of sub-stoichiometric compounds when the deviation from the

Stoichiometry causes no substantial leakage currents. The upper contact layer 107, the upper thermoelectric

Layer 108 and optionally dielectric layer 109 are separated by cut 103 to interrupt the electrical connection of successive pn junctions. The upper contact layer 107 and the lower contact layer 111 are separated in the trench 104, so that it is not good thermal connection between the hot and cold side of the thermoelectric component comes.

The manufacturing method for the thermoelectric component according to FIG. 1 comprises the following steps:

1. The substrate 106 is cleaned by wet-chemical methods (for example with solvent) and optionally by means of ultrasound. A simple cleaning procedure involves water, acetone and propanol. As an alternative methods such as the RCA cleaning process in question.

2. The lower contact layer 111 is deposited by PVD, PECVD, CVD, wet deposition, printing, etc. For example, molybdenum can be sputtered

while copper or nickel may be electrodeposited.

3. The lower contact layer 111 is through the cut

along the trench 104 by means of laser writing,

Laser engraving, laser ablation, etching by one

photolithographically prepared mask with subsequent removal of the mask or other methods separated.

4. The lower thermoelectric layer 110 is deposited by PVD, PECVD, CVD, wet deposition, printing,

Cold gas spraying, nozzle spraying, etc. deposited. For example, Bi2Te3 can be deposited by means of sputtering, while for SiGe PECVD can also be used.

5. The thermoelectric layer 110 may be heat treated to improve its properties. For Bi2Te3 2 to 3 hours at 220 to 280 ° C are typical

Parameter. SiGe can be heat treated in forming gas at at least 400 ° C. The thermoelectric layer 110 is formed by cutting along the trench 101 by means of laser writing, laser engraving, laser ablation, etching by a

photolithographically prepared mask with subsequent removal of the mask or other methods separated. The cuts along the trenches 101, 102, 103 become

repeated according to the number of series-connected pn junctions to be made.

The dielectric layer 109 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold gas spraying, nozzle spraying, etc. For example, SiNx can be deposited by means of PECVD, while sputtering can also be used for A1N.

The upper thermoelectric layer 108 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold gas spraying, nozzle spraying, etc. For example, Bi2Te3 can be deposited by means of sputtering, while for SiGe PECVD can also be used.

The thermoelectric layer 108 may be heat treated to improve its properties. For Bi2Te3 2 to 3 hours at 220 to 280 ° C are typical

Parameter. SiGe can be heat treated in forming gas at at least 400 ° C. The thermoelectric layer 108, the dielectric layer 109 and the thermoelectric layer 110 are formed by the section along the trench 102

Laser writing, laser engraving, laser ablation, etching through a photolithographically produced mask with subsequent removal of the mask or other

Procedure separately. The top contact layer 107 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold gas spraying, nozzle spraying, etc. For example, molybdenum can be deposited by means of sputtering, while for copper or nickel galvanic deposition comes into question.

The upper contact layer 107 and the upper

thermoelectric layer 108 are formed by cutting along trench 103 by laser writing,

Laser engraving, laser ablation, etching by one

The upper contact layer 107 is formed by the cut along the trench 104 by means of laser writing,

Laser engraving, laser ablation, etching by one

photolithographically prepared mask with subsequent removal of the mask or other methods separated. Embodiment 2:

Due to the fact that many thermoelectric

Materials are expensive and only a small part of

Volume used generates the electric current (see Fig. 1) is another thermoelectric component

proposed that requires less thermoelectric material. The constructed as p-n or p-i-n diode

Thermoelectric components, also referred to as chips, are applied to a substrate (400, 410) shown in FIGS. 4-6, in particular a lead frame, which is used for the electrical connection of the components to one another and the thermal connection to a heat source or Heat sink provides. Several layouts (layout A-C) of such

thermoelectric component and for all layouts

matching cross sections are shown in FIG. Although the shape and layout of the chips are different, they all have the same cross section AA. The form and

Layouts of the chips are not on the layouts A to C

limited. Any shape and layout with the cross-section A-A may be for a thermoelectric component

Generator can be used, as shown in Figures 4-6.

The layer sequence of the component is the same as in the embodiment 1. A first contact 308 is connected to a heat source, the contacts 307 and 306 are connected to the heat sink. The second and third contacts 306, 307 are also used for the electrical connection. The principal difference of the further embodiment of the thermoelectric component shown in FIG. the component of Figure 2 is that the contacts 306, 307 and 308 are placed on different sides. While the contacts are arranged in the embodiment of Figure 2 on the upper side, they are in the embodiment of Figure 3 on the lower side. The electrical and thermal connection of the lower

Contact layer 111 with the contacts 306, 307, 308 is effected by metallized vias 309.

In both the embodiment of FIG. 2 and the embodiment of FIG. 3, the upper and lower thermoelectric layers 108, 110 and the dielectric layer 109 are separated by the cuts along the trenches 305 and 301. Here are the lower and the upper

Contact layer 107, 111 connected together so that the thermal connection of the p-n or p-i-n diode improved and an electrical connection to the contacts 306,309

will be produced. In both the embodiment of FIG. 2 and the embodiment of FIG. 3, all layers except the upper and lower thermoelectric layers 110, 108 are separated by the cut along the trench 303 so that the heat flows only through the pn or pin diode.

In the embodiment of Figure 2, the upper

Contact layer 107 and the upper thermoelectric layer 108 separated by the section along the trench 302, so that a short circuit of the diode is avoided.

In the embodiment according to FIG. 3, the lower contact layer 111 and the lower thermoelectric layer 110 are separated by the section along the trench 302 in order to avoid a short circuit of the diode.

The manufacturing method for the thermoelectric component according to FIG. 2 comprises the following steps:

1. The substrate 106 is cleaned by wet-chemical method (solvent) or by ultrasound. A simple cleaning procedure involves water, acetone and propanol. As an alternative methods such as the RCA cleaning process in question.

2. The lower contact layer 111 is deposited by PVD, PECVD, CVD, wet deposition, printing, etc.

For example, molybdenum can be sputtered

while copper or nickel may be electrodeposited.

3. The contact layer 111 is separated by cutting along the trench 303 by laser writing, laser engraving, laser ablation, etching through a photolithographically fabricated mask, followed by mask removal or other methods. The lower thermoelectric layer 110 is deposited by PVD, PECVD, CVD, wet deposition, printing,

Cold gas spraying, nozzle spraying, etc. deposited.

For example, Bi2Te3 can be deposited by means of sputtering, while for SiGe PECVD can also be used.

The thermoelectric layer 110 may be heat treated to improve its properties. For Bi2Te3 2 to 3 hours at 220 to 280 ° C are typical

Parameter. SiGe can be heat treated in forming gas at at least 400 ° C.

Dielectric layer 109 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold spray, nozzle spraying. For example, SiNx can be deposited by means of PECVD, while sputtering can also be used for A1N.

The dielectric layer 109 is laser cut by cutting along the trench 303,

Laser engraving, laser ablation, etching by one

Parameter. SiGe can be heat treated in forming gas at at least 400 ° C. 10. The thermoelectric layer 108, the dielectric

Layer 109 and thermoelectric layer 110 are formed by the cuts along trenches 301 and 305 by laser writing, laser engraving, laser ablation, etching through a photolithographically fabricated mask, followed by mask removal or others

Procedure separately. 11. The top electrode layer 107 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold gas spraying, nozzle spraying, etc. For example, molybdenum can be deposited by means of sputtering, while for copper or nickel galvanic deposition comes into question.

12. The upper electrode layer 107 and the upper

thermoelectric layer 108 are formed by cutting along trench 302 by laser writing,

Laser engraving, laser ablation, etching by one

photolithographically produced mask with subsequent

Removal of mask or other procedures separately.

13. The electrode layer 107 is separated by cutting along the trench 303 by laser writing, laser engraving, laser ablation, etching through a photolithographically fabricated mask, followed by mask removal or other methods.

The manufacturing method for the thermoelectric component according to FIG. 3 comprises the following steps:

1. The substrate 106 is with double-sided metallization to form the lower contact layer 111 on the

Top and another contact layer on the bottom of the substrate 106 is provided. The two contact layers are interrupted along the first and third trenches 302, 303, so that both the lower contact layer 111 and the further contact layer are each divided into three electrically and thermally separated contacts 308, 307, 306. The contacts 308, 307, 306 on top of the substrate 106 are connected to the contacts 308, 307, 306 on the

Bottom of the substrate 106 by electrical and

thermally conductive vias 309 connected. The substrate metallized on both sides is produced, for example, by means of a PCB manufacturing process.

2. The substrate 106 is cleaned by wet chemical methods (solvent) or by ultrasound. A simple cleaning procedure involves water, acetone and propanol. As an alternative wet chemical

Cleaning process is considered an RCA cleaning.

3. The lower thermoelectric layer 110 is by means of

PVD, PECVD, CVD, wet deposition, printing,

Cold gas spraying, nozzle spraying, etc. deposited.

For example, Bi2Te3 can be deposited by means of sputtering, while for SiGe PECVD can also be used. The lower thermoelectric layer 110 may

be heat treated to their properties too

improve. For Bi2Te3 2 to 3 hours at 220 to 280 ° C are typical parameters. SiGe can be heat treated in forming gas at at least 400 ° C.

The thermoelectric layer 110 is formed by cutting along the trench 302 by laser writing,

Laser engraving, laser ablation, etching by one

The dielectric layer 109 is laser cut by cutting along the trench 303,

Laser engraving, laser ablation, etching by one

Parameter. SiGe can be heat treated in forming gas at at least 400 ° C. The thermoelectric layer 108, the dielectric layer 109 and the thermoelectric layer 110 are formed by the cuts along the trenches 301 and 305 by laser writing, laser engraving, laser ablation, etching through a photolithographically fabricated mask, followed by removal of the mask or others

Procedure separately.

The top contact layer 107 is deposited by PVD, PECVD, CVD, wet deposition, printing, cold gas spraying, nozzle spraying, etc. For example, molybdenum can be deposited by means of sputtering, while for copper or nickel galvanic deposition comes into question. 12. The upper contact layer 107 is through the cut

along the trench 303 by means of laser writing,

Laser engraving, laser ablation, etching by one

Connecting the components according to the figures 2, 3 with a

Substrate according to FIGS. 4 to 6:

The previously produced components or chips are connected to the contact surfaces 401, 402, 403 (FIG. 4) or 411, 412 (FIG. 5) or 420, 422 (FIG. 6) of the lead frame 400, 410

connected to the formed substrate. Such a lead frame 400, 410 may be made of polyimide (e.g., Kapton), Kevlar, various circuit board materials such as EP2, 85N, or 35N, or

Composite materials exist. It can be flexible or rigid. The contact surfaces 401, 402, 403 and 411, 412 and 420, 422 must have a high thermal and electrical

Having conductivity, e.g. Copper and his

Alloys. For high temperature applications molybdenum is particularly suitable. The contact surfaces 401, 402, 403 and 411, 412 and 420, 422 can additionally with nickel or be coated with another material that is suitable for a

Provides corrosion protection and / or forms a diffusion barrier. The contact surfaces 401, 402, 403 and 411, 412 and 420, 422 ensure good heat conduction to and from the chips and a good electrical connection of the chips with each other.

The chips on the lead frame, which are thermally parallel and electrically connected in series according to FIGS. 2, 3, form a thermoelectric generator. For this purpose, the contact surfaces 401, 402, 403 and 411, 412 and 420, 422 are arranged on the lead frame, wherein the first contact surfaces 402, 412, 422 are arranged in a row on the substrate and connectable to a heat source and the second

Contact surfaces 401, 411, 420 are arranged in a row on the substrate and connectable to a heat sink.

Heat source and heat sink can also be arranged vice versa. The first contact 308 of each component is connected to a respective first contact surface 402, 412, 422, the second contact 306 of each component is connected to a second one

Contact surface 401, 411, 420 connected. The third contact 307 of each component is connected in series with a second contact surface 401, 411, 420 adjacent to the second contact surface 401, 411, 420 connected to the second contact 306 of the component. In which

Embodiment of Figure 4, the second

Contact surface 401 for producing the electrically conductive connection to the third contact 307 a between the adjacent contact surfaces 401, 402 extending

Contact section 403, 404 on.

Chips having an array of contacts 306, 307, 308 (layout A in FIG. 2) are connected to lead frame 400 as illustrated in FIG. Two rows of contact surfaces 401, 402 are parallel to each other on the substrate, so that the

Contact surfaces are aligned vertically to each other. The Contact portions 403 in the middle row are connected to the contacts 401 of the lower row via a contact land 404. The contact 308 is connected to the contact surface 402, the contact 307 to the contact portion 403 and the contact 306 to the contact surface 401. The trench 303 is located between the rows of pads 402 and

Contact portions 403. The trench 302 is located between the rows of contact pads 401 and the contact portions 403. The bonding process may include soldering, anodic bonding, fusion bonding or other suitable methods.

The contacts 401 and the contact portions 403 are used for the series electrical connection. The contacts 402 and 401 must be dimensioned such that both the chips and the heat source or sink can be connected. The electrical voltage of the thermoelectric generator generated by the chips connected in series can be tapped at the outermost contacts 401 in FIG.

The above-described construction of the thermoelectric generator is the same for chips having layout A of FIG.

Chips having an array of contacts 306, 307, 308

according to the layout B of Figure 2 are arranged on a lead frame with lying in two rows contact surfaces 411,412 (Fig. 5). The contact surfaces 411, 412 in the two rows are offset from each other, so that the contact surfaces 412 in the upper row, the spaces between the contact surfaces 411 in the lower row

overlap. The pads 412 are connected to the contacts 308 of the chips of FIG. 2 layout B. The contact surfaces 411 are connected to the contacts 306, 307. The trenches 303 and 302 are disposed between the contact surfaces 411, 412. The lower row of contact surfaces 411 is for the

series electrical connection of the chips used. The materials and bonding processes are the same as in the leadframes of FIG. 4. The contacts 411 and 412 must be sized so that both the chips and the heat source or sink can be connected. The generated by the series-connected chips

electrical voltage of the thermoelectric generator can be tapped at the outermost in Figure 5 contacts 411. The above-described construction of the thermoelectric

Generator agrees for chips with layout B of FIG.

Chips having an array of contacts 306, 307, 308

according to the layout C of Figure 2 are arranged on a lead frame with in two rows of contact surfaces 420, 422 (Fig. 6). The contact surfaces 420, 422 in the two rows are arranged offset to one another, so that the

Contact surfaces 422 in the upper row, the spaces between the contact surfaces 420 in the lower row

overlap. The pads 422 are connected to the contacts 308 of the chips of FIG. 2 layout C. The contact surfaces 420 are connected to the contacts 306, 307. The trenches 303 and 302 are arranged between the contact surfaces 420, 422. The bottom row of contact pads 420 is for the

series electrical connection of the chips used.

The materials and bonding processes are the same as in the lead frames of Figure 4. The contacts 420 and 422 must be sized so that both the chips and the heat source or sink can be connected. The generated by the series-connected chips

electrical voltage of the thermoelectric generator can be tapped at the outermost contacts 420 in Figure 6. The above-described construction of the thermoelectric

Generator agrees for chips with layout C of FIG.

Claims

claims

1. Thermoelectric component comprising - a substrate (106),

a lower one with respect to the substrate (106)

thermoelectric layer (110) and a thermoelectric layer (108) with respect to the substrate (106),

a dielectric layer (109) disposed between each lower and upper thermoelectric layer (108, 110),

a lower contact layer (111) suitable for establishing electrical and thermal contact with the lower thermoelectric

Layer (110),

an upper contact layer (107) suitable for making electrical and thermal contact with the upper thermoelectric layer (108),

an interruption of the dielectric layer (109) along a first trench (104), the thermoelectric layers (108, 110) forming a pn-junction or a p-i-n junction along the first trench (104),

an interruption of the lower and upper

Contact layer (111, 107) along the first trench (104, 303) dividing both the upper and lower contact layers (111, 107) into thermally separated contacts (100, 105, 380, 307, 307), respectively;

wherein the separate contacts (100, 105,

308, 306, 307) a temperature gradient (T1, T2) can be applied. Thermoelectric component according to claim 1,

marked by,

at least one series of second, third and fourth trenches (101, 102, 103), all of which are transverse to the first trench (104), the third trench (102) being disposed between the second and fourth trenches,

an interruption of the dielectric layer (109) and the lower and upper thermoelectric layers (108, 110) along the third trench (102), wherein the upper contact layer (107) along the third trench (102) with the lower contact layer (111) in electrically conductive connection,

interrupting the lower thermoelectric layer (110) along the second trench (101) and interrupting the upper contact layer (107) and the upper thermoelectric layer (108) along the fourth trench (103).

Process for the preparation of a thermoelectric

A device according to claim 2 including a first trench (104) and at least one series of second, third and fourth trenches (101, 102, 103) all extending transversely of the first trench (104), the third trench (102) between the second and fourth trench, comprising the steps:

(a) providing a cleaned substrate (106),

(b) depositing a lower contact layer (111) on the substrate (106),

(c) separating the lower contact layer (111) into thermally separated contacts along the path of the first trench (104),

(d) depositing the lower thermoelectric layer

(110) on the separate lower contact layer (111), (e) separating the lower thermoelectric layer (110) along the course of the second trench (101),

(f) depositing the dielectric layer (109) on the separated lower thermoelectric layer (110), (g) depositing the upper thermoelectric layer

(108) on the dielectric layer (109),

(h) separating the dielectric layer (109) and the

(i) depositing the upper contact layer (107) onto the separated upper thermoelectric layer (108), the upper contact layer (107) being along the third Trench (102) through the separate

dielectric layer (109) and the separate lower thermoelectric layer (110) form an electrically conductive connection to the lower contact layer (111),

(j) separating the upper contact layer (107) and the

upper thermoelectric layer (108) along the course of the fourth trench (103) as well

(k) separating the upper contact layer (107) into thermally separated contacts (100, 105) along the path of the first trench (104). 4. Method for producing a thermoelectric

Component according to claim 3, characterized in that the thermoelectric layers are subjected to a heat treatment. Thermoelectric component according to claim 1,

characterized by a second, third and fourth trench (301, 302, 305),

wherein all the trenches (301, 302, 303, 305) extend between lateral edges of the component without cutting,

the fourth trench (305) is disposed on a side adjacent to the first trench (303) and

the third trench (302) between the first

Trench (303) and the second trench (301) on the opposite side next to the first trench (303) are arranged,

an interruption of the dielectric layer (109) and the lower and upper thermoelectric layer (108, 110) along the second trench (301), wherein the upper contact layer (107) along the second trench (301) with the lower contact layer (111) in electrically conductive connection,

an interruption of the upper contact layer (107) and the upper thermoelectric layer (108) along the third trench (302) and

an interruption of the dielectric layer (109) and the lower and upper thermoelectric layers (108, 110) along the fourth trench (305), wherein the upper contact layer (107) along the fourth trench (305) with the lower contact layer (111) in electrically conductive connection stands. Thermoelectric component according to claim 5, characterized in that the upper contact layer (107) in three thermally and electrically separate contacts (308, 307, 306) through the trenches

(301, 302, 303), wherein a first contact (308) for coupling to a heat source and a second and third contact (306, 307) for coupling to a heat source

Heat sink and is provided as an electrical connection, wherein the third contact (307) between the first and second contact (308,306) is arranged.

Process for the preparation of a thermoelectric

Component according to Claim 5 or 6, having a first trench (104) and a second, third and fourth trench (301, 302, 305).

the third trench (302) between the first trench (303) and the second trench (301) on the

opposite side next to the first trench (303) are arranged,

comprising the steps:

(a) providing a cleaned substrate (106),

(b) depositing a lower contact layer (111) on the substrate (106),

(c) separating the lower contact layer (111) into thermally separated contacts along the path of the first trench (303),

(d) depositing the lower thermoelectric layer

(110) on the separate lower contact layer (111), (e) depositing the dielectric layer (109) on the separate lower thermoelectric layer (110),

(f) separating the dielectric layer (109) along the path of the first trench (303),

(g) depositing the upper thermoelectric layer

(108) on the separate dielectric layer (109),

(h) separating the dielectric layer (109) and the

upper and lower thermoelectric layers (108, 110) along the course of the second trench (301) and the fourth trench (305),

(i) depositing the upper contact layer (107) onto the separated upper thermoelectric layer (108), the upper contact layer (107) extending along the second trench (301) and the fourth trench (305) through the separated upper thermoelectric layer (108). in that the separate dielectric layer (109) and the separate lower thermoelectric layer (110) form an electrically conductive connection to the lower contact layer (111).

(j) separating the upper contact layer (107) and the

upper thermoelectric layer (108) along the course of the third trench (302) as well

(K) separating the upper contact layer (107) in thermally and electrically separated contacts

(308, 307, 306) along the course of the first trench (303).

Thermoelectric component according to claim 1,

characterized by a further contact layer, wherein between the further contact layer and the lower

Contact layer (111), the substrate (106) is arranged,

a second, third and fourth trench (301, 302, 305),

wherein all trenches (301, 302, 303, 305) extend between edges of the component without cutting,

the third trench (302) between the first

an interruption of the lower thermoelectric layer (110), the lower contact layer (111) and the further contact layer along the third

Grabens (302),

an interruption of the further contact layer along the first trench (303) and

an interruption of the dielectric layer (109) and the lower and upper thermoelectric layers (108, 110) along the fourth trench (305), wherein the upper contact layer (107) along the fourth trench (305) with the lower contact layer (111) in electrically conductive connection stands. Thermoelectric component according to claim 8, characterized in that the further contact layer is divided into three thermally and electrically separate contacts (308, 307, 306) through the trenches (302, 303), wherein a first contact (308) for coupling to a heat source and a second and third contact (306, 307) is provided for coupling to a heat sink and as an electrical connection, wherein the third contact (307) between the first and second contact (308,306) is arranged and all contacts (306,307,308) through the substrate (106). thermally and electrically connected to the lower contact layer (111).

Process for the preparation of a thermoelectric

Component according to Claim 8 or 9, having a first trench (104) and a second, third and fourth trench (301, 302, 305).

opposite side next to the first trench (303) are arranged,

comprising the steps:

(a) providing a cleaned substrate (106) having a lower contact layer (111) on one

Top and another contact layer on a bottom side of the substrate (106),

(b) depositing the lower thermoelectric layer

(110) on the broken lower contact layer

(111), (c) depositing the dielectric layer (109) on the lower thermoelectric layer (110),

(d) separating the dielectric layer (109) along the course of the first trench (303),

(e) depositing the upper thermoelectric layer

(108) on the separate dielectric layer (109),

(f) separating the dielectric layer (109) and the

(g) depositing the upper contact layer (107) onto the separated upper thermoelectric layer (108), wherein the upper contact layer (107) extends along the second trench (301) and the fourth trench (305) through the separate dielectric layer (109) and the separate lower thermoelectric layer (110) forms an electrically conductive connection to the lower contact layer (111),

(h) separating the upper contact layer (107) along the path of the first trench (303).

Process for the preparation of a thermoelectric

Component according to claim 7 or 10, characterized in that the thermoelectric layers of a

Be subjected to heat treatment.

Thermoelectric generator comprising a plurality of thermally connected in parallel and electrically in series

Thermoelectric components according to claim 5 or 8,

characterized in that on a substrate (400,410) first and second

Contact surfaces (401,402,403) are arranged,

the first contact surfaces (402) are arranged in a row on the substrate and connectable to a heat source, the second contact surfaces (401) are arranged in a row on the substrate and can be connected to a heat sink,

the first contact (308) of each component is connected to a first contact surface (402) of the substrate,

the second contact (306) of each component is connected to a second contact surface (402) and the third contact (307) of each component is connected to a second contact surface (402) in the row adjacent to the second contact

(308) of the component connected second contact surface

(402).

13. Thermoelectric element according to claim 12, characterized

in that the substrate (400, 410) is made of an electrically insulating material having a smaller thickness than the contact surfaces (401, 402, 403)

Thermal conductivity exists.

14. Thermoelectric element according to one of claims 12 or 13, characterized in that the contact surfaces (401,402,403) have a high electrical and a high

Have thermal conductivity.