DE102008033223A1 - Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate - Google Patents
Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate Download PDFInfo
- Publication number
- DE102008033223A1 DE102008033223A1 DE102008033223A DE102008033223A DE102008033223A1 DE 102008033223 A1 DE102008033223 A1 DE 102008033223A1 DE 102008033223 A DE102008033223 A DE 102008033223A DE 102008033223 A DE102008033223 A DE 102008033223A DE 102008033223 A1 DE102008033223 A1 DE 102008033223A1
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- layer
- semiconductor substrate
- semiconductor
- substrate
- dopant
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- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000002019 doping agent Substances 0.000 title claims abstract description 12
- 238000009792 diffusion process Methods 0.000 title claims abstract description 5
- 230000035784 germination Effects 0.000 title abstract 7
- 238000005496 tempering Methods 0.000 title description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 8
- 239000010941 cobalt Substances 0.000 claims abstract description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 48
- 210000001654 germ layer Anatomy 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Erzeugung einer Kontakt-Struktur mit selektivem Emitter. Die Erfindung betrifft außerdem ein Halbleiter-Bauelement.The The invention relates to a method for producing a contact structure with selective emitter. The invention also relates a semiconductor device.
Grundlage einer hocheffizienten Solarzelle ist ein niedrig dotierter, hochohmiger Emitter, in dem der Verlust durch Rekombination freier Ladungsträger sehr klein wird. Um jedoch den Strom der Solarzelle möglichst verlustfrei ableiten zu können, ist ein möglichst niedriger Kontaktwiderstand zwischen dem Emitter und der Kontakt-Struktur erforderlich. Dies wird durch eine hohe Dotierung des Emitters unterhalb der Kontaktstruktur erreicht. Ein Emitter, der unterhalb der Kontakt-Struktur eine sehr hohe und im Bereich zwischen den Kontakten eine niedrige Dotierung aufweist, wird als selektiver Emitter bezeichnet. Die Herstellung eines derartigen Emitters erfordert üblicherweise zusätzliche, aufwändige Verfahrensschritte. Hierdurch steigen die Kosten zur Herstellung der Solarzelle beträchtlich.basis a highly efficient solar cell is a low-doped, high-impedance Emitter in which the loss due to recombination of free charge carriers gets very small. However, the current of the solar cell as possible to be able to derive without loss is one possible low contact resistance between the emitter and the contact structure required. This is due to a high doping of the emitter below reached the contact structure. An emitter under the contact structure a very high and in the area between the contacts a low Doping is referred to as a selective emitter. The Production of such an emitter usually requires additional, complex process steps. hereby The costs for producing the solar cell increase considerably.
Der Erfindung liegt daher die Aufgabe zugrunde, ein Verfahren zur einfacheren Herstellung einer Kontaktstruktur mit selektivem Emitter bereitzustellen. Der Erfindung liegt weiterhin die Aufgabe zugrunde, ein Halbleiter-Bauelement mit einem selektiven Emitter zu schaffen.Of the The invention is therefore based on the object, a method for simpler To provide a contact structure with selective emitter. The invention is further based on the object, a semiconductor device to create with a selective emitter.
Diese Aufgabe wird durch die Merkmale der Ansprüche 1 und 6 gelöst. Der Kern der Erfindung besteht darin, bei der Herstellung einer Kontakt-Struktur für ein Halbleiter-Bauelement eine Keimschicht auf dem Halbleiter-Substrat abzuscheiden, welche einen Dotierstoff enthält, der bei einem nachfolgenden Tempern in das Halbleiter-Substrat diffundiert. Hierdurch wird auf einfache Weise sichergestellt, dass die Dotierung des Halbleiter- Substrats im Bereich direkt unterhalb der Kontakt-Struktur eine hohe Dotierung aufweist, während der Dotiergrad in den dazwischen liegenden Bereichen schwächer ist.These The object is solved by the features of claims 1 and 6. The essence of the invention is in the production of a Contact structure for a semiconductor device a seed layer to deposit on the semiconductor substrate, which is a dopant contains, which diffuses in a subsequent annealing in the semiconductor substrate. This ensures in a simple manner that the doping of the semiconductor substrate in the region directly below the contact structure has a high doping, while the doping in the intervening areas is weaker.
Weitere Vorteile ergeben sich aus den Unteransprüchen. Merkmale und Einzelheiten der Erfindung ergeben sich aus der Beschreibung mehrerer Ausführungsbeispiele anhand der Zeichnungen. Es zeigen:Further Advantages emerge from the subclaims. characteristics and details of the invention will be apparent from the description several embodiments with reference to the drawings. Show it:
Ein
Halbleiter-Bauelement
Auf
der Vorderseite
Die
Kontakt-Struktur
Die
Keimschicht
Anstelle
einer p-dotierten Basis
Im
Folgenden wird ein Verfahren zur Herstellung des Halbleiter-Bauelements
Sodann
wird in die Öffnungen
Der
Gehalt an Phosphorverbindungen im Elektrolyt ist insbesondere so
hoch, dass die Metalle der Keimschicht
Nach
dem Abscheiden der Keimschicht
Auf
der getemperten Keimschicht
Es
ist ebenso möglich, den Temperschritt erst nach der Abscheidung
der Leiterschicht
Im
Folgenden wird unter Bezugnahme auf die
Selbstverständlich
lassen sich die Merkmale der Ausführungsbeispiele gemäß
Schließlich lässt sich das beschriebene Verfahren auch für die Herstellung von Rückseiten-Kontakt-Solarzellen einsetzen.After all can the described method also for use the production of back-side contact solar cells.
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - DE 102007038744 [0010, 0013, 0014, 0017] - DE 102007038744 [0010, 0013, 0014, 0017]
- - DE 102008028104 [0010, 0013] - DE 102008028104 [0010, 0013]
- - DE 102007031958 [0017] - DE 102007031958 [0017]
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008033223A DE102008033223A1 (en) | 2008-07-15 | 2008-07-15 | Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008033223A DE102008033223A1 (en) | 2008-07-15 | 2008-07-15 | Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102008033223A1 true DE102008033223A1 (en) | 2010-01-21 |
Family
ID=41427128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102008033223A Withdrawn DE102008033223A1 (en) | 2008-07-15 | 2008-07-15 | Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102008033223A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010037088A1 (en) | 2010-08-20 | 2012-02-23 | Roth & Rau Ag | Method for producing an improved contact between a silver-containing interconnect and silicon |
EP2789017A4 (en) * | 2011-12-09 | 2015-09-02 | Hanwha Chemical Corp | Solar cell and method for preparing the same |
DE112012002807B4 (en) | 2011-09-14 | 2019-03-28 | International Business Machines Corporation | Photovoltaic device with a multi-metal semiconductor alloy and method of making the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193337A (en) * | 2002-12-11 | 2004-07-08 | Sharp Corp | Method for forming electrode for solar cell and solar cell manufactured thereby |
DE102007031958A1 (en) | 2007-07-10 | 2009-01-15 | Deutsche Cell Gmbh | Contact structure for a semiconductor device and method for producing the same |
DE102007038744A1 (en) | 2007-08-16 | 2009-02-19 | Deutsche Cell Gmbh | Method for producing a semiconductor device, semiconductor device and intermediate in the production thereof |
DE102008028104A1 (en) | 2008-06-13 | 2009-12-24 | Deutsche Cell Gmbh | Metallization process for solar cells |
-
2008
- 2008-07-15 DE DE102008033223A patent/DE102008033223A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193337A (en) * | 2002-12-11 | 2004-07-08 | Sharp Corp | Method for forming electrode for solar cell and solar cell manufactured thereby |
DE102007031958A1 (en) | 2007-07-10 | 2009-01-15 | Deutsche Cell Gmbh | Contact structure for a semiconductor device and method for producing the same |
DE102007038744A1 (en) | 2007-08-16 | 2009-02-19 | Deutsche Cell Gmbh | Method for producing a semiconductor device, semiconductor device and intermediate in the production thereof |
DE102008028104A1 (en) | 2008-06-13 | 2009-12-24 | Deutsche Cell Gmbh | Metallization process for solar cells |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010037088A1 (en) | 2010-08-20 | 2012-02-23 | Roth & Rau Ag | Method for producing an improved contact between a silver-containing interconnect and silicon |
WO2012023103A2 (en) | 2010-08-20 | 2012-02-23 | Roth & Rau Ag | Method for producing an improved contact between a silver-containing conductive track and silicon |
DE112012002807B4 (en) | 2011-09-14 | 2019-03-28 | International Business Machines Corporation | Photovoltaic device with a multi-metal semiconductor alloy and method of making the same |
EP2789017A4 (en) * | 2011-12-09 | 2015-09-02 | Hanwha Chemical Corp | Solar cell and method for preparing the same |
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