JPS59980A - Thermoelectric element - Google Patents

Abstract

PURPOSE:To facilitate the effective electric connection and the machining work of an electrode leading surface of a thermoelectric element which is integrated like a P-N junction by forming roughed surface by sandblasting on the electrode leading surface. CONSTITUTION:A thermoelectric element 1 is integrated by bonding P type semiconductor 2 of sintered iron silicide and an N type semiconductor 3 to one end to form a P-N junction 4. An electrode leading surface 5 is machined by a sand blasting method which sprays polishing abrasive 6 by air. As a consequence, the surface 5 becomes roughened surface, from which an oxidized film produced in the thermoelectric element manufacturing steps is removed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermoelectric element in which a P-type semiconductor such as iron silicide and an N-type semiconductor are bonded and integrated.

A thermoelectric element using a sintered thermoelectric semiconductor such as iron silicide has been proposed prior to the present application Δ, but in this case, connection of lead wires to the thermoelectric element has been a problem. In other words, in order to make the iron silicide sintered body into a semiconductor, it is subjected to a 7-Ale treatment in the air after being formed and sintered, but as a result, an oxide film is formed on the surface of the sintered body that constitutes the thermoelectric element, and the insulation This is because they have a sexual nature. Therefore, when taking out the electrode, electrical continuity cannot be established unless this oxide film is removed. For this reason,
Conventionally, the electrode extraction surface of a thermoelectric element was subjected to pelt gelling or cutting and polishing using a grinding machine, but this method was difficult to work with and added stress to the sintered body, which caused damage during the cutting and polishing process. There was a risk that the

The present invention eliminates the above-mentioned drawbacks and forms the electrode extraction surfaces of the P-type semiconductor and N-type semiconductor on a satin surface by sandblasting, thereby making it possible to perform electrical connection reliably and easily.
Furthermore, the present invention aims to provide a thermoelectric element whose electrode extraction surface is easy to work with.

Embodiments of the thermoelectric element of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, the thermoelectric element 1 includes a P-type semiconductor 2 and an N-type semiconductor 3 made of iron silicide sintered bodies, and a PN junction 4 at one end.
It is a structure in which the two parts are joined together to form a single piece. In this case, it is common to use the end faces of the legs of the P-type and N-type semiconductor devices 3 as the electrode extraction surfaces 5, respectively, and use a sandblasting method in which abrasive powder (sand) 6 is sprayed with air onto the electrode extraction surfaces 5. Processing is performed by. As a result, the electrode extraction surface 5 shown in FIG. 2 becomes a satin surface from which the oxide film produced during the thermoelectric element manufacturing process has been removed.

FIG. 3 shows the process of connecting the lead wire 10 to the electrode extraction surface 5, which is a matte surface, of the thermoelectric element 1 by ultrasonic soldering. In this case, the soldering iron 11 performs soldering while vibrating ultrasonically, and the action of the ultrasonic wave destroys the film on the electrode extraction surface 5, allowing good soldering to be performed.

According to the configuration of the above embodiment, the following effects can be achieved.

(1) Since the electrode extraction surface 5 of the thermoelectric element 1 is sandblasted to a polished, pear-finished surface, there is no risk of damage due to stress as in the case of conventional grinders and grinding machines.
Workability is also good.

(2) Sandblasting is performed on the legs of the P-type semiconductor 2 and the N
Even if the height of the mold semiconductor 3 with respect to the leg part is uneven, it can be easily carried out without any problem.

(3) By appropriately selecting the particle size of the abrasive powder (sand) 6 during sandblasting, a surface roughness suitable for ultrasonic soldering can be obtained.

FIG. 4 shows another embodiment of the invention. In this case, not only the end surfaces of the legs of the P-type and N-type semiconductors 2.3 but also the side surfaces of the legs several inches wide in contact with the end surfaces of the legs are respectively used as electrode extraction surfaces 5A. Therefore, the end face of the leg of the electrode extraction surface 5A and the side face of the leg in contact with the end face of the leg are also processed by a sandblasting method in which abrasive powder (sand) is blown with air in several widths. This and other parts that will not be processed are covered with a mask. In the case of Fig. 4, since the matte surface is also formed on the side of the leg, when connecting the lead wire, the solder wraps around the side of the leg as well. Can be done.

Note that the shape of the thermoelectric element can be changed as appropriate, and the electrode extraction surface may also be a side surface of the leg instead of the end surface of the leg of the P-type and N-type semiconductor.

As explained above, according to the present invention, by forming the electrode extraction surfaces of the P-type semiconductor and the N-type semiconductor on a matte surface by sandblasting, electrical connection can be reliably and easily performed, and the electrode extraction surfaces can be processed. A thermoelectric element with good workability can be obtained.

[Brief explanation of the drawing]

FIG. 1 is an embodiment of the thermoelectric element according to the present invention, and is a schematic explanatory diagram showing the process of making the electrode extraction surface a satin surface by sandblasting, FIG. 2 is a perspective view showing the electrode extraction surface, and FIG. 3 is an electrode extraction surface. FIG. 4 is a cross-sectional view showing the process of ultrasonically soldering the lead wire to the extraction surface, and FIG. 4 is a perspective view showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Thermoelectric element, 2... P-type semiconductor, 3... N-type semiconductor, 4... PN junction, 5... Electrode extraction surface, 10
···Lead. Patent applicant Tokyo Denki Kagaku Kogyo Co., Ltd. Representative Patent attorney Takashi Murai FsA 2,3 379-

Claims (2)

[Claims] (1) A thermoelectric element in which a P-type semiconductor and an N-type semiconductor are integrated so that a PN junction is formed, and the electrode extraction surface of the thermoelectric element is made into a satin finish by sandblasting. . (2) The thermoelectric element according to claim 1, wherein a lead wire is connected to the matte surface by ultrasonic soldering.