JPH0526744Y2 - - Google Patents

Info

Publication number
JPH0526744Y2
JPH0526744Y2 JP12493187U JP12493187U JPH0526744Y2 JP H0526744 Y2 JPH0526744 Y2 JP H0526744Y2 JP 12493187 U JP12493187 U JP 12493187U JP 12493187 U JP12493187 U JP 12493187U JP H0526744 Y2 JPH0526744 Y2 JP H0526744Y2
Authority
JP
Japan
Prior art keywords
lead frame
heater block
island
bonding
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12493187U
Other languages
Japanese (ja)
Other versions
JPS6429829U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12493187U priority Critical patent/JPH0526744Y2/ja
Publication of JPS6429829U publication Critical patent/JPS6429829U/ja
Application granted granted Critical
Publication of JPH0526744Y2 publication Critical patent/JPH0526744Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Description

【考案の詳細な説明】 (イ) 産業上の利用分野 本考案は、ワイヤボンデイングもしくはペレツ
トボンデイングに適用して有効な技術に関するも
のである。 (ロ) 従来の技術 半導体装置の製造には一般にリードフレームが
使用されており、これは鉄系又は銅系の合金から
成る肉厚0.2mm前後の板状材料を第２図に示す様
な形状に抜き金型で打抜き加工（バンチング）す
ることで製作される。その為、リードフレーム１
のアイランド２やインナーリード３の端部には第
３図の断面図に示す様に高さ50〜100μmのバリ４
が発生する。 一方、ワイヤボンデイングおよびぺレツトボン
デイング等の作業に際しては、接合強度を十分に
保つために、リードフレーム１のアイランド２や
インナーリード３等の被ボンデイング部材の所定
箇所を予め適温に加熱しておく必要がある。 ここで加熱方法としては、第３図に示す様に被
ボンデイング部材を載置するボンデイングテーブ
ルの一部に、ヒータを挿通したヒータブロツク５
を設けて被ボンデイング部材を裏面側から加熱す
る方法が知られている。 しかしながら、この方法はバリ４の生じたリー
ドフレーム１の裏面にヒータブロツク５の一平面
を押し付けるので、バリ４が突起となつてリード
フレーム１とヒータブロツク５の間に〓間が生
じ、熱の伝達効率を劣化させる欠点があつた。そ
の為、加熱に余分な時間がかかつてしまう。 (ハ) 考案が解決しようとする問題点 本考案は、上述した様なバリ４によつてリード
フレーム１とヒータブロツク５との間に〓間が生
じる欠点を解決し、加熱時間の無駄を解消せんと
するものである。 (ニ) 問題点を解決するための手段 本考案は斯上した欠点に鑑みてなされ、ヒータ
ブロツク１８のリードフレーム１３と当接する面
に溝１９を設け、この溝１９にバリ２０が没する
ようにして作業を行うように構成したことを特徴
とする。 (ホ) 作用 本考案によれば、リードフレーム１３のバリ２
０が溝１９の中へ逃げるので、被ボンデイング箇
所の大部分をヒータブロツク１８に密着させるこ
とができ、効率の良い加熱が行える。 (ヘ) 実施例 以下、本考案を図面を参照しながら詳細に説明
する。 第１図は本考案の一実施例であるダイボンデイ
ング装置の要部とリードフレームの要部を示す要
部拡大断面図である。同図において、１１はその
表面に回路素子形成が終了した半導体ペレツト、
１２はペレツト１１を取付る為のリードフレーム
１３のアイランド、１４は先端をアイランド１２
に近接するようにして複数本配設したリードフレ
ーム１３のインナーリード、１５は半導体ペレツ
ト１１を吸引して保持する吸着コレツト、１６は
リードフレーム１３をボンデイングステージ１７
上に固定する為の押え部材、１８はボンデイング
ステージ１７のヒータブロツク、１９はヒータブ
ロツク１８表面にアイランド１２の外周に沿うよ
うに形成した溝である。ヒータブロツク１８は加
熱面１８ａが吸着コレツト１５の先端と対向する
位置に配設されており、ヒータブロツク１８の内
部には図示せぬヒータが内蔵されている。 上述した装置を用いてダイボンド工程を行うに
は、先ずステージ１７のヒータブロツク１８上に
リードフレーム１３のアイランド１２が位置する
様にリードフレーム１３を移動し、押え部材１６
が下降することによつて押え部材１６とステージ
１７とでリードフレーム１３を挾持する。この
時、ヒータブロツク１８の表面に設けた溝１９に
アイランド１２裏面のバリ２０が没するようにリ
ードフレーム１３を固定すれば、バリ２０が溝１
９内に逃げるので、アイランド１２裏面の大部分
がヒータブロツク１８表面と密着する。その為、
被ボンデイング箇所であるアイランド１２及びア
イランド１２上に予め一定量吐出しておいた共晶
合金や銀ペースト等のロウ材２１への熱の伝達効
率が良く、これらを短時間でボンデイングに好適
な温度（400〜450℃）に加熱できる。 次に、吸着コレツト１５によつて別の場所に置
いてある半導体ペレツト１１のうち１個を真空に
て吸着し、アイランド１２上に移動・下降して半
導体ペレツト１１をアイランド１２に固定する。
その後吸引力を切断して吸着コレツト１５が上昇
し、押え部材１６の力を解放してリードフレーム
１３をステージ１７上から移動する。そして、次
の未搭載のアイランド１２へ同様の手順で半導体
ペレツト１１を固定する。 この様に、ヒータブロツク１８表面に切つた溝
１９にリードフレーム１３のバリ２０が逃げるよ
うにしてアイランド１２を加熱すれば、加熱効率
が良いのでそれに要する時間を従来の2.5sec／個
から2.0sec／個に短縮することができる。その
為、単位時間当りの処理量が増大すると共に、信
頼性の高いボンデイング作業を行うことができ
る。 尚、本考案はダイボンデイング装置に限らずワ
イヤボンデイング装置にも適用することが可能
で、その場合はアイランド１２周縁の他にインナ
ーリード１４の周縁にも沿うような溝１９を設け
れば良い。また、バリ２０の高さは大体50〜
100μm前後なので溝１９の深さは100〜150μm程
度で良い。 (ト) 考案の効果 以上説明した如く、本考案によればヒータブロ
ツク１８と被ボンデイング部材との間に〓間が生
じることの無い、加熱効率の良いボンデイング作
業ができるので、生産性の向上と信頼性の高い半
導体装置を提供できる利点を有する。 [Detailed description of the invention] (a) Industrial application field The present invention relates to a technique that is effective when applied to wire bonding or pellet bonding. (b) Prior art Lead frames are generally used in the manufacture of semiconductor devices, and are made of plate-shaped materials made of iron or copper alloys with a wall thickness of approximately 0.2 mm and shaped as shown in Figure 2. It is manufactured by punching (bunching) using a punching die. Therefore, lead frame 1
There are burrs 4 with a height of 50 to 100 μm on the ends of the islands 2 and inner leads 3, as shown in the cross-sectional view of Figure 3.
occurs. On the other hand, when performing wire bonding, pellet bonding, etc., in order to maintain sufficient bonding strength, it is necessary to heat predetermined parts of the bonded parts, such as the island 2 of the lead frame 1 and the inner leads 3, to an appropriate temperature in advance. There is. Here, as a heating method, as shown in FIG .
A known method is to heat the member to be bonded from the back side by providing a However, in this method, one surface of the heater block 5 is pressed against the back surface of the lead frame 1 where the burr 4 is formed, so the burr 4 becomes a protrusion and a gap is created between the lead frame 1 and the heater block 5 , resulting in heat dissipation. It had the drawback of deteriorating transmission efficiency. Therefore, extra time is required for heating. (c) Problems to be solved by the invention The invention solves the drawback that the burr 4 causes a gap between the lead frame 1 and the heater block 5 as described above, and eliminates wasted heating time. This is what I am trying to do. (d) Means for solving the problem The present invention was made in view of the above-mentioned drawbacks, and a groove 19 is provided in the surface of the heater block 18 that comes into contact with the lead frame 13 , so that the burr 20 is sunk into the groove 19. It is characterized by being configured so that the work can be carried out by (E) Effect According to the present invention, the burr 2 of the lead frame 13
0 escapes into the groove 19, most of the bonded area can be brought into close contact with the heater block 18, and efficient heating can be performed. (f) Examples Hereinafter, the present invention will be explained in detail with reference to the drawings. FIG. 1 is an enlarged sectional view of the main parts of a die bonding apparatus and a lead frame according to an embodiment of the present invention. In the figure, 11 is a semiconductor pellet on which circuit elements have been formed;
12 is the island of the lead frame 13 for attaching the pellet 11, 14 is the island 12 at the tip.
15 is a suction collet that sucks and holds the semiconductor pellet 11 , and 16 is a suction collet that connects the lead frame 13 to a bonding stage 17.
A holding member 18 is a heater block of the bonding stage 17 , and a groove 19 is formed on the surface of the heater block 18 along the outer periphery of the island 12. The heater block 18 is disposed at a position where the heating surface 18a faces the tip of the suction collet 15, and a heater (not shown) is built inside the heater block 18. To carry out the die bonding process using the above-mentioned apparatus, first move the lead frame 13 so that the island 12 of the lead frame 13 is positioned above the heater block 18 of the stage 17 , and then press the holding member 16.
As the lead frame 13 is lowered , the lead frame 13 is held between the holding member 16 and the stage 17. At this time, if the lead frame 13 is fixed so that the burr 20 on the back surface of the island 12 is submerged in the groove 19 provided on the surface of the heater block 18, the burr 20 will fit into the groove 19.
9, most of the back surface of the island 12 comes into close contact with the surface of the heater block 18. For that reason,
The efficiency of heat transfer to the brazing material 21 such as eutectic alloy or silver paste, which has been discharged in advance in a certain amount onto the island 12 and the island 12 which are the bonding points, is high, and the temperature suitable for bonding is achieved in a short time. (400-450℃). Next, one of the semiconductor pellets 11 placed elsewhere is vacuum-adsorbed by the suction collet 15, and the semiconductor pellet 11 is fixed onto the island 12 by being moved and lowered onto the island 12.
Thereafter, the suction force is cut off, the suction collet 15 rises, the force of the holding member 16 is released, and the lead frame 13 is moved from the stage 17 . Then, the semiconductor pellet 11 is fixed to the next unmounted island 12 using the same procedure. In this way, if the islands 12 are heated so that the burrs 20 of the lead frame 13 escape through the grooves 19 cut on the surface of the heater block 18 , the heating efficiency is good, and the time required for this is 2.0 seconds instead of the conventional 2.5 seconds/piece. It can be shortened to / pieces. Therefore, the amount of processing per unit time increases, and highly reliable bonding work can be performed. The present invention can be applied not only to die bonding equipment but also to wire bonding equipment, in which case the groove 19 may be provided along the periphery of the inner lead 14 in addition to the periphery of the island 12. Also, the height of Bali 20 is approximately 50~
Since the depth is around 100 μm, the depth of the groove 19 may be about 100 to 150 μm. (G) Effects of the invention As explained above, according to the invention, bonding work can be performed with good heating efficiency without creating a gap between the heater block 18 and the bonded member, resulting in improved productivity. It has the advantage of providing a highly reliable semiconductor device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案を説明する為の断面図、第２図
及び第３図は夫々従来例を説明する為の平面図及
び断面図である。 １１は半導体ペレツト、１２はリードフレーム
１３のアイランド、１８はヒータブロツク、１９
は溝、２０はアイランド１２のバリである。 FIG. 1 is a sectional view for explaining the present invention, and FIGS. 2 and 3 are a plan view and a sectional view for explaining a conventional example, respectively. 11 is a semiconductor pellet, 12 is an island of lead frame 13, 18 is a heater block, 19
is a groove, and 20 is a burr on the island 12.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 打抜き加工によつて作られたリードフレームを
ステージ上に載置し、前記リードフレームの被ボ
ンデイング部分の裏面をヒータブロツクで加熱し
ながら作業を行うボンデイング装置において、前
記ヒータブロツク表面に前記リードフレームのバ
リが没する溝を設けたことを特徴とするボンデイ
ング装置。 In a bonding apparatus in which a lead frame made by punching is placed on a stage and the back side of the part to be bonded of the lead frame is heated by a heater block, the lead frame is placed on the surface of the heater block. A bonding device characterized by having a groove in which a burr is sunk.
JP12493187U 1987-08-17 1987-08-17 Expired - Lifetime JPH0526744Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12493187U JPH0526744Y2 (en) 1987-08-17 1987-08-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12493187U JPH0526744Y2 (en) 1987-08-17 1987-08-17

Publications (2)

Publication Number Publication Date
JPS6429829U JPS6429829U (en) 1989-02-22
JPH0526744Y2 true JPH0526744Y2 (en) 1993-07-07

Family

ID=31375086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12493187U Expired - Lifetime JPH0526744Y2 (en) 1987-08-17 1987-08-17

Country Status (1)

Country Link
JP (1) JPH0526744Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100785085B1 (en) 2005-02-07 2007-12-12 삼성전자주식회사 Image forming apparatus and image reading apparatus
JP2014120544A (en) * 2012-12-14 2014-06-30 Mitsubishi Electric Corp Light emitting device

Also Published As

Publication number Publication date
JPS6429829U (en) 1989-02-22

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