AT410492B - Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht - Google Patents

Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht Download PDF

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Publication number
AT410492B
AT410492B AT0076300A AT7632000A AT410492B AT 410492 B AT410492 B AT 410492B AT 0076300 A AT0076300 A AT 0076300A AT 7632000 A AT7632000 A AT 7632000A AT 410492 B AT410492 B AT 410492B
Authority
AT
Austria
Prior art keywords
thermoelectric element
element according
layer
layers
temperature
Prior art date
Application number
AT0076300A
Other languages
German (de)
English (en)
Other versions
ATA7632000A (de
Original Assignee
Span Gerhard Dipl Ing Dr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to AT0076300A priority Critical patent/AT410492B/de
Application filed by Span Gerhard Dipl Ing Dr filed Critical Span Gerhard Dipl Ing Dr
Priority to KR1020027014293A priority patent/KR100581978B1/ko
Priority to JP2001581354A priority patent/JP3921602B2/ja
Priority to PCT/AT2001/000123 priority patent/WO2001084641A1/de
Priority to AT01923379T priority patent/ATE252769T1/de
Priority to DE50100847T priority patent/DE50100847D1/de
Priority to AU2001250149A priority patent/AU2001250149A1/en
Priority to EP01923379A priority patent/EP1287566B1/de
Priority to CNB018089186A priority patent/CN100352073C/zh
Priority to RU2002132261/28A priority patent/RU2248647C2/ru
Publication of ATA7632000A publication Critical patent/ATA7632000A/de
Priority to US10/280,065 priority patent/US6762484B2/en
Application granted granted Critical
Publication of AT410492B publication Critical patent/AT410492B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
AT0076300A 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht AT410492B (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht
JP2001581354A JP3921602B2 (ja) 2000-05-02 2001-04-25 熱電素子
PCT/AT2001/000123 WO2001084641A1 (de) 2000-05-02 2001-04-25 Thermoelektrisches element
AT01923379T ATE252769T1 (de) 2000-05-02 2001-04-25 Thermoelektrisches element
KR1020027014293A KR100581978B1 (ko) 2000-05-02 2001-04-25 열전기 소자 및 이의 사용 방법 및 열전기 장치
DE50100847T DE50100847D1 (de) 2000-05-02 2001-04-25 Thermoelektrisches element
AU2001250149A AU2001250149A1 (en) 2000-05-02 2001-04-25 Thermoelectric element
EP01923379A EP1287566B1 (de) 2000-05-02 2001-04-25 Thermoelektrisches element
CNB018089186A CN100352073C (zh) 2000-05-02 2001-04-25 热电元件
RU2002132261/28A RU2248647C2 (ru) 2000-05-02 2001-04-25 Термоэлемент
US10/280,065 US6762484B2 (en) 2000-05-02 2002-10-25 Thermoelectric element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht

Publications (2)

Publication Number Publication Date
ATA7632000A ATA7632000A (de) 2002-09-15
AT410492B true AT410492B (de) 2003-05-26

Family

ID=3680572

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht

Country Status (10)

Country Link
US (1) US6762484B2 (enExample)
EP (1) EP1287566B1 (enExample)
JP (1) JP3921602B2 (enExample)
KR (1) KR100581978B1 (enExample)
CN (1) CN100352073C (enExample)
AT (1) AT410492B (enExample)
AU (1) AU2001250149A1 (enExample)
DE (1) DE50100847D1 (enExample)
RU (1) RU2248647C2 (enExample)
WO (1) WO2001084641A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005036407A1 (de) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Auswerteeinheit für kontinuierliche Thermoelemente
EP2009709A2 (de) 2007-06-29 2008-12-31 Gerhard Span Thermoelektrisches Element
WO2013182361A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches element zur umwandlung von energie zwischen thermischer energie und elektrischer energie und ein verfahren zum auseinanderbauen des thermoelektrischen elements

Families Citing this family (31)

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US6828579B2 (en) * 2001-12-12 2004-12-07 Hi-Z Technology, Inc. Thermoelectric device with Si/SiC superlattice N-legs
US7038234B2 (en) * 2001-12-12 2006-05-02 Hi-Z Technology, Inc. Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
WO2006005126A1 (en) * 2004-07-12 2006-01-19 Newsouth Innovations Pty Limited Reversible thermoelectric nanomaterials
US20060048809A1 (en) * 2004-09-09 2006-03-09 Onvural O R Thermoelectric devices with controlled current flow and related methods
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
US8283553B1 (en) 2007-09-21 2012-10-09 Hrl Laboratories, Llc Photon enhanced thermoelectric power generation
DE102007050741A1 (de) 2007-10-22 2009-04-23 O-Flexx Technologies Gmbh Thermoelektrischer Generator
DE102008032856A1 (de) 2008-07-14 2010-01-28 O-Flexx Technologies Gmbh Wärmeüberträger für ein thermoelektrisches Dünnschichtelement
DE102009032906A1 (de) * 2009-07-10 2011-01-20 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
JP5560610B2 (ja) * 2009-08-26 2014-07-30 富士通株式会社 発電装置及びそのような発電装置を備えた発電システム
DE102009048985A1 (de) 2009-10-09 2011-04-21 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
DE102010005340A1 (de) 2010-01-21 2011-07-28 O-Flexx Technologies GmbH, 47228 Verfahren und Vorrichtung zur Strukturierung einer auf einem Substrat angeordneten Lage
KR101701349B1 (ko) * 2010-06-10 2017-02-01 엘지이노텍 주식회사 냉각전용 열전소자 및 그 제조 방법
EP2591547A1 (en) * 2010-07-07 2013-05-15 Dynamic Connections, LLC Renewable energy extraction
FR2963165A1 (fr) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 Procede de generation d'energie electrique dans un dispositif semi-conducteur, et dispositif correspondant
FR2968134B1 (fr) 2010-11-26 2013-05-17 Schneider Electric Ind Sas Module thermoélectrique a rendement amélioré
RU2444814C1 (ru) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
DE102011001653A1 (de) * 2011-03-30 2012-10-04 O-Flexx Technologies Gmbh Thermoelektrische Anordnung
CN102779936A (zh) * 2011-05-12 2012-11-14 冯建明 Pn结四极管式热电转换和制冷制热装置
RU2477828C1 (ru) * 2011-10-25 2013-03-20 Святослав Михайлович Сергеев Тепловой диод
WO2014114559A1 (de) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelektrisches bauteil, verfahren zu dessen herstellung und thermoelektrischer generator
CN104956505B (zh) * 2013-01-24 2017-09-19 欧-弗莱克斯科技有限公司 热电元件以及其制造方法
RU2576414C2 (ru) * 2014-05-21 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" Охлаждающее устройство
CN106876569B (zh) * 2015-12-10 2019-04-23 廖建能 热电模块
WO2018022922A1 (en) * 2016-07-27 2018-02-01 Novus Energy Technologies, Inc. Thermoelectric heat pump system
US12181351B2 (en) 2018-02-28 2024-12-31 Arthur Beckman Thermopile assembly providing a massive electrical series of wire thermocouple elements
JP2020088028A (ja) * 2018-11-19 2020-06-04 トヨタ自動車株式会社 熱電変換素子、熱電変換システム、及びそれらを用いる発電方法
UA120025C2 (uk) 2019-03-26 2019-09-10 Андрій Дмитрович Хворостяний Напівпровідниковий термоелектричний генератор
DE102021209656B3 (de) 2021-09-02 2022-09-29 Nikolay Iosad Thermoelektrisches Element, thermoelektrischer Generator und Verfahren zu deren Herstellung
DE102023104908A1 (de) 2023-02-28 2024-08-29 Nikolay Iosad Thermoelektrische Elemente, thermoelektrische Module und Verfahren zu deren Herstellung

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JPS57169283A (en) * 1981-04-11 1982-10-18 Tdk Corp Thermoelectric element
JPS59980A (ja) * 1982-06-26 1984-01-06 Tdk Corp 熱電素子
US5009717A (en) * 1989-07-18 1991-04-23 Mitsubishi Metal Corporation Thermoelectric element and method of manufacturing same
JPH0463481A (ja) * 1990-03-08 1992-02-28 Mitsubishi Materials Corp 絶縁被覆型熱発電素子及びその製造法
JPH0738158A (ja) * 1993-07-16 1995-02-07 Vacuum Metallurgical Co Ltd 一体化焼結型シリコンゲルマニウム熱電変換素子及びその製造法
JPH1022530A (ja) * 1996-07-01 1998-01-23 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH1022531A (ja) * 1996-07-01 1998-01-23 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH10144969A (ja) * 1996-11-08 1998-05-29 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH11195817A (ja) * 1997-12-27 1999-07-21 Sumitomo Special Metals Co Ltd 熱電変換素子
EP0969526A1 (en) * 1997-12-27 2000-01-05 Sumitomo Special Metals Company Limited Thermoelectric element

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JPS57169283A (en) * 1981-04-11 1982-10-18 Tdk Corp Thermoelectric element
JPS59980A (ja) * 1982-06-26 1984-01-06 Tdk Corp 熱電素子
US5009717A (en) * 1989-07-18 1991-04-23 Mitsubishi Metal Corporation Thermoelectric element and method of manufacturing same
JPH0463481A (ja) * 1990-03-08 1992-02-28 Mitsubishi Materials Corp 絶縁被覆型熱発電素子及びその製造法
JPH0738158A (ja) * 1993-07-16 1995-02-07 Vacuum Metallurgical Co Ltd 一体化焼結型シリコンゲルマニウム熱電変換素子及びその製造法
JPH1022530A (ja) * 1996-07-01 1998-01-23 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH1022531A (ja) * 1996-07-01 1998-01-23 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH10144969A (ja) * 1996-11-08 1998-05-29 Sumitomo Special Metals Co Ltd 熱電変換素子
JPH11195817A (ja) * 1997-12-27 1999-07-21 Sumitomo Special Metals Co Ltd 熱電変換素子
EP0969526A1 (en) * 1997-12-27 2000-01-05 Sumitomo Special Metals Company Limited Thermoelectric element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005036407A1 (de) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Auswerteeinheit für kontinuierliche Thermoelemente
EP2009709A2 (de) 2007-06-29 2008-12-31 Gerhard Span Thermoelektrisches Element
US8373057B2 (en) 2007-06-29 2013-02-12 Gerhard Span Thermoelectric element
US8766083B2 (en) 2007-06-29 2014-07-01 Gerhard Span Thermoelectric element
WO2013182361A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches element zur umwandlung von energie zwischen thermischer energie und elektrischer energie und ein verfahren zum auseinanderbauen des thermoelektrischen elements
DE102012209619A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches Element zur Umwandlung von Energie zwischen thermischer Energie und elektrischer Energie und ein Verfahren zum Auseinanderbauen des thermoelektrischen Elements

Also Published As

Publication number Publication date
KR100581978B1 (ko) 2006-05-23
CN100352073C (zh) 2007-11-28
ATA7632000A (de) 2002-09-15
CN1441972A (zh) 2003-09-10
DE50100847D1 (de) 2003-11-27
AU2001250149A1 (en) 2001-11-12
EP1287566B1 (de) 2003-10-22
RU2248647C2 (ru) 2005-03-20
EP1287566A1 (de) 2003-03-05
JP2003533031A (ja) 2003-11-05
KR20020093070A (ko) 2002-12-12
WO2001084641A1 (de) 2001-11-08
US6762484B2 (en) 2004-07-13
US20030042497A1 (en) 2003-03-06
JP3921602B2 (ja) 2007-05-30

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