RU2006104551A - Сверхтвердые алмазы и способ их получения - Google Patents

Сверхтвердые алмазы и способ их получения Download PDF

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RU2006104551A
RU2006104551A RU2006104551/15A RU2006104551A RU2006104551A RU 2006104551 A RU2006104551 A RU 2006104551A RU 2006104551/15 A RU2006104551/15 A RU 2006104551/15A RU 2006104551 A RU2006104551 A RU 2006104551A RU 2006104551 A RU2006104551 A RU 2006104551A
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crystal diamond
gpa
hardness
diamond
indenter
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RU2006104551/15A
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RU2323281C2 (ru
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Расселл Дж. ХЕМЛИ (US)
Расселл Дж. ХЕМЛИ
Хо-кванг МАО (US)
Хо-Кванг Мао
Чжи-Шию ЯНЬ (US)
Чжи-Шию ЯНЬ
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Карнеги Инститьюшн Оф Вашингтон (Us)
Карнеги Инститьюшн Оф Вашингтон
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/76—Television signal recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/20—Disc-shaped record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/60—Solid state media
    • G11B2220/65—Solid state media wherein solid state memory is used for storing indexing information or metadata
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/76—Television signal recording
    • H04N5/765—Interface circuits between an apparatus for recording and another apparatus
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/76—Television signal recording
    • H04N5/765—Interface circuits between an apparatus for recording and another apparatus
    • H04N5/775—Interface circuits between an apparatus for recording and another apparatus between a recording apparatus and a television receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/76—Television signal recording
    • H04N5/78—Television signal recording using magnetic recording
    • H04N5/781—Television signal recording using magnetic recording on disks or drums
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/79—Processing of colour television signals in connection with recording
    • H04N9/80—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
    • H04N9/804—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback involving pulse code modulation of the colour picture signal components
    • H04N9/8042—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback involving pulse code modulation of the colour picture signal components involving data reduction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/79—Processing of colour television signals in connection with recording
    • H04N9/80—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
    • H04N9/82—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback the individual colour picture signal components being recorded simultaneously only
    • H04N9/8205—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback the individual colour picture signal components being recorded simultaneously only involving the multiplexing of an additional signal and the colour video signal

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Thermal Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Television Signal Processing For Recording (AREA)

Claims (15)

1. Монокристаллический алмаз, выращенный химическим осаждением из газовой фазы, индуцированным микроволновой плазмой, подвергнутый отжигу при давлениях свыше 4,0 ГПа и нагреванию до температуры свыше 1500°C, который обладает твердостью более 120 ГПа.
2. Монокристаллический алмаз по п.1, трещиностойкость которого составляет 6-10 МПа м1/2.
3. Монокристаллы алмаза по п.1, твердость которого составляет 160-180 ГПа.
4. Монокристаллический алмаз по п.1, твердость которого определяют по уравнению Hv=1,854·P/D2, где P означает максимальный груз, используемый в инденторе для образования углубления в монокристаллическом алмазе, и D означает протяженность самой длинной трещины, образованной под воздействием индентора в монокристаллическом алмазе, и h означает глубину углубления в монокристаллическом алмазе.
5. Монокристаллический алмаз по п.3, обладающий трещиностойкостью 6-10 MPa·м1/2.
6. Монокристаллический алмаз, обладающий твердостью 160-180 ГПа.
7. Монокристаллический алмаз по п.6, обладающий трещиностойкостью 6-10 MPa·м1/2.
8. Монокристаллический алмаз по п.6, твердость которого определяют по уравнению Hv=1,854·P/D2, где P означает максимальный груз, используемый в инденторе для образования углубления в монокристаллическом алмазе, и D означает протяженность самой длинной трещины, образовавшейся под воздействием индентора в монокристаллическом алмазе, и h означает глубину углубления в монокристаллическом алмазе.
9. Способ получения твердого монокристаллического алмаза, включающий выращивание монокристаллического алмаза и отжиг монокристаллического алмаза при давлениях свыше 4,0 ГПа и температуре свыше 1500°C для достижения твердости свыше 120 ГПа.
10. Способ п.9, в котором выращивание монокристаллического алмаза включает химическое осаждение из газовой фазы, индуцированное микроволновой плазмой.
11. Способ п.9, в котором выращивание монокристаллического алмаза происходит в атмосфере N2/CH4=0,2-5,0% и CH4/H2=12-20% при суммарном давлении 120-220 торр.
12. Способ п.9, в котором отжиг монокристаллического алмаза приводит к получению монокристаллического алмаза, обладающего твердостью свыше 160-180 ГПа.
13. Способ п.9, в котором выращивание монокристаллического алмаза происходит в атмосфере, имеющей температуру 900-1500°C.
14. Способ п.9, в котором отжиг происходит в течение 1-60 мин.
15. Способ п.9, в котором отжиг монокристаллического алмаза приводит к получению монокристаллического алмаза, обладающего твердостью свыше 140-180 ГПа.
RU2006104551/15A 2003-07-14 2004-07-14 Сверхтвердые алмазы и способ их получения RU2323281C2 (ru)

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US48643503P 2003-07-14 2003-07-14
US60/486,435 2003-07-14

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RU2323281C2 RU2323281C2 (ru) 2008-04-27

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RU2006104551/15A RU2323281C2 (ru) 2003-07-14 2004-07-14 Сверхтвердые алмазы и способ их получения
RU2006104555/15A RU2325323C2 (ru) 2003-07-14 2004-07-14 Твердые алмазы и способы их получения
RU2006104552/02A RU2324764C2 (ru) 2003-07-14 2004-07-14 Отжиг монокристаллических алмазов, полученных химическим осаждением из газовой фазы

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RU2006104555/15A RU2325323C2 (ru) 2003-07-14 2004-07-14 Твердые алмазы и способы их получения
RU2006104552/02A RU2324764C2 (ru) 2003-07-14 2004-07-14 Отжиг монокристаллических алмазов, полученных химическим осаждением из газовой фазы

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US (7) US7115241B2 (ru)
EP (3) EP1663866A4 (ru)
JP (3) JP2007531679A (ru)
KR (3) KR101111690B1 (ru)
CN (3) CN1942610B (ru)
AU (3) AU2004258193B2 (ru)
BR (3) BRPI0412536A (ru)
CA (3) CA2532227A1 (ru)
HK (3) HK1093334A1 (ru)
IL (4) IL173101A (ru)
RU (3) RU2323281C2 (ru)
TW (3) TWI342902B (ru)
WO (3) WO2005007937A2 (ru)
ZA (3) ZA200600884B (ru)

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