PL2824070T3 - Sposób wytwarzania krzemu o wysokiej czystości - Google Patents

Sposób wytwarzania krzemu o wysokiej czystości

Info

Publication number
PL2824070T3
PL2824070T3 PL12870715T PL12870715T PL2824070T3 PL 2824070 T3 PL2824070 T3 PL 2824070T3 PL 12870715 T PL12870715 T PL 12870715T PL 12870715 T PL12870715 T PL 12870715T PL 2824070 T3 PL2824070 T3 PL 2824070T3
Authority
PL
Poland
Prior art keywords
highly pure
pure silicon
manufacturing highly
manufacturing
silicon
Prior art date
Application number
PL12870715T
Other languages
English (en)
Inventor
Shinji Tokumaru
Masataka Hiyoshi
Jiro Kondo
Hitoshi Dohnomae
Yutaka Kishida
Shigeru Nakazawa
Kozo ONOUE
Original Assignee
Silicio Ferrosolar S.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicio Ferrosolar S.L. filed Critical Silicio Ferrosolar S.L.
Publication of PL2824070T3 publication Critical patent/PL2824070T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
PL12870715T 2012-03-08 2012-03-08 Sposób wytwarzania krzemu o wysokiej czystości PL2824070T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2012/055937 WO2013132629A1 (ja) 2012-03-08 2012-03-08 高純度シリコンの製造方法、及びこの方法で得られた高純度シリコン、並びに高純度シリコン製造用シリコン原料
EP12870715.5A EP2824070B1 (en) 2012-03-08 2012-03-08 Method for manufacturing highly pure silicon

Publications (1)

Publication Number Publication Date
PL2824070T3 true PL2824070T3 (pl) 2019-09-30

Family

ID=49116145

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12870715T PL2824070T3 (pl) 2012-03-08 2012-03-08 Sposób wytwarzania krzemu o wysokiej czystości

Country Status (9)

Country Link
US (1) US10167199B2 (pl)
EP (1) EP2824070B1 (pl)
JP (1) JP5938092B2 (pl)
CN (1) CN104271506B (pl)
ES (1) ES2704906T3 (pl)
LT (1) LT2824070T (pl)
PL (1) PL2824070T3 (pl)
SI (1) SI2824070T1 (pl)
WO (1) WO2013132629A1 (pl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103469303B (zh) * 2013-09-24 2016-08-10 江西赛维Ldk太阳能高科技有限公司 多晶硅锭及其制备方法、多晶硅片和多晶硅铸锭用坩埚
CN104556045A (zh) * 2014-12-11 2015-04-29 中国科学院等离子体物理研究所 一种利用Al-Si合金熔体机械搅拌去除Si中杂质P的方法
CN110344113A (zh) * 2019-08-23 2019-10-18 江苏美科硅能源有限公司 一种减少多晶硅锭或铸造单晶锭氧含量和杂质点的装料方法
CN117085967A (zh) * 2023-09-01 2023-11-21 四川晶科能源有限公司 一种硅料分类方法

Family Cites Families (21)

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JPS63166A (ja) 1986-06-19 1988-01-05 Toshiba Corp 不揮発性半導体記憶装置
DE3627624A1 (de) * 1986-08-14 1988-02-18 Bayer Ag Verfahren zur herstellung von kohlenstoffarmem silicium
JP2538044B2 (ja) 1989-04-07 1996-09-25 川崎製鉄株式会社 金属シリコン脱炭用ランスおよび脱炭方法
JPH0574783A (ja) * 1991-09-13 1993-03-26 Fujitsu Ltd シリコンウエハーおよびウエハーゲツタリングの処理方法
US5961944A (en) * 1996-10-14 1999-10-05 Kawasaki Steel Corporation Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
JPH11314911A (ja) 1998-05-07 1999-11-16 Sumitomo Sitix Amagasaki:Kk 多結晶シリコンインゴットの製造方法
JP2001000064A (ja) 1999-06-18 2001-01-09 Kazumi Kimura 子豚圧死防止具
CN1648041A (zh) * 2004-01-19 2005-08-03 吴尔盛 从金属硅制备超纯硅的方法和装置
WO2006093089A1 (ja) * 2005-02-28 2006-09-08 Kyocera Corporation 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール
US20090266396A1 (en) 2005-03-29 2009-10-29 Kyocera Corporation Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module
JP2007000261A (ja) 2005-06-22 2007-01-11 Chugoku Electric Power Co Inc:The 発光機能付き歩行補助具
JP4003804B1 (ja) 2006-05-25 2007-11-07 日本油脂株式会社 液状コーヒーホワイトナー用油脂組成物
JP2008127254A (ja) * 2006-11-22 2008-06-05 Kyocera Corp シリコンインゴットの製造方法
DE102006062117A1 (de) * 2006-12-22 2008-06-26 Schott Solar Gmbh Verfahren zum Herstellen kristallisierten Siliciums sowie kristallisiertes Silicium
CN101367522A (zh) * 2007-08-13 2009-02-18 侯振海 生产高纯硅的新材料及工艺
US7887633B2 (en) * 2008-06-16 2011-02-15 Calisolar, Inc. Germanium-enriched silicon material for making solar cells
US8758507B2 (en) * 2008-06-16 2014-06-24 Silicor Materials Inc. Germanium enriched silicon material for making solar cells
WO2010127184A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Quality control process for umg-si feedstock
JP5171739B2 (ja) 2009-06-17 2013-03-27 両備商事株式会社 塗膜除去方法並びに装置
TWI403461B (zh) * 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon

Also Published As

Publication number Publication date
US10167199B2 (en) 2019-01-01
JPWO2013132629A1 (ja) 2015-07-30
WO2013132629A1 (ja) 2013-09-12
EP2824070B1 (en) 2018-12-12
EP2824070A1 (en) 2015-01-14
EP2824070A4 (en) 2015-10-14
ES2704906T3 (es) 2019-03-20
CN104271506A (zh) 2015-01-07
US20150028268A1 (en) 2015-01-29
JP5938092B2 (ja) 2016-06-22
LT2824070T (lt) 2019-04-25
CN104271506B (zh) 2015-11-11
SI2824070T1 (sl) 2019-05-31

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