PL2492368T3 - Tarcza rozpylania jonowego w kształcie rury - Google Patents
Tarcza rozpylania jonowego w kształcie ruryInfo
- Publication number
- PL2492368T3 PL2492368T3 PL12000166T PL12000166T PL2492368T3 PL 2492368 T3 PL2492368 T3 PL 2492368T3 PL 12000166 T PL12000166 T PL 12000166T PL 12000166 T PL12000166 T PL 12000166T PL 2492368 T3 PL2492368 T3 PL 2492368T3
- Authority
- PL
- Poland
- Prior art keywords
- sputter target
- tubular sputter
- tubular
- target
- sputter
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/123—Spraying molten metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12389—All metal or with adjacent metals having variation in thickness
- Y10T428/12396—Discontinuous surface component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011012034A DE102011012034A1 (de) | 2011-02-22 | 2011-02-22 | Rohrförmiges Sputtertarget |
EP12000166.4A EP2492368B1 (de) | 2011-02-22 | 2012-01-12 | Rohrförmiges Sputtertarget |
Publications (1)
Publication Number | Publication Date |
---|---|
PL2492368T3 true PL2492368T3 (pl) | 2021-08-02 |
Family
ID=45507397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL12000166T PL2492368T3 (pl) | 2011-02-22 | 2012-01-12 | Tarcza rozpylania jonowego w kształcie rury |
Country Status (8)
Country | Link |
---|---|
US (1) | US9334564B2 (pl) |
EP (1) | EP2492368B1 (pl) |
JP (1) | JP5777539B2 (pl) |
KR (1) | KR20120096426A (pl) |
CN (1) | CN102644053B (pl) |
DE (1) | DE102011012034A1 (pl) |
PL (1) | PL2492368T3 (pl) |
TW (1) | TWI527923B (pl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5140169B2 (ja) | 2011-03-01 | 2013-02-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5026611B1 (ja) | 2011-09-21 | 2012-09-12 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP5074628B1 (ja) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
KR20160085907A (ko) * | 2012-08-22 | 2016-07-18 | 제이엑스금속주식회사 | 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법 |
US20140110245A1 (en) * | 2012-10-18 | 2014-04-24 | Primestar Solar, Inc. | Non-bonded rotatable targets and their methods of sputtering |
TWI461556B (zh) * | 2012-10-24 | 2014-11-21 | Solar Applied Mat Tech Corp | 四方晶結構之銦靶材 |
CN103789729A (zh) * | 2012-10-31 | 2014-05-14 | 光洋应用材料科技股份有限公司 | 四方晶结构的铟靶材 |
JP5968808B2 (ja) * | 2013-03-07 | 2016-08-10 | Jx金属株式会社 | インジウム製円筒形ターゲット部材及び円筒形ターゲット部材の製造方法 |
US9922807B2 (en) * | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
JP6217295B2 (ja) * | 2013-10-07 | 2017-10-25 | 三菱マテリアル株式会社 | Inスパッタリングターゲット |
JP6305083B2 (ja) * | 2014-02-04 | 2018-04-04 | Jx金属株式会社 | スパッタリングターゲット及び、それの製造方法 |
EP2947175A1 (en) * | 2014-05-21 | 2015-11-25 | Heraeus Deutschland GmbH & Co. KG | CuSn, CuZn and Cu2ZnSn sputter targets |
EP3085809B1 (en) | 2015-04-20 | 2018-07-18 | Materion Advanced Materials Germany GmbH | Process for preparing a tubular sputtering target |
JP6456810B2 (ja) * | 2015-12-11 | 2019-01-23 | Jx金属株式会社 | In−Cu合金スパッタリングターゲット及びその製造方法 |
JP2017141515A (ja) * | 2017-03-17 | 2017-08-17 | Jx金属株式会社 | スパッタリングターゲット及び、それの製造方法 |
US11450516B2 (en) | 2019-08-14 | 2022-09-20 | Honeywell International Inc. | Large-grain tin sputtering target |
CN112030119A (zh) * | 2020-08-27 | 2020-12-04 | 苏州思菲科新材料科技有限公司 | 一种铟管靶及其制备方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60234968A (ja) | 1984-05-07 | 1985-11-21 | Nippon Mining Co Ltd | ボンデツドタ−ゲツトとその製造法 |
DE4115663A1 (de) * | 1991-05-14 | 1992-11-19 | Leybold Ag | Verfahren zur herstellung eines targets, insbesondere eines rohrtargets einer sputtervorrichtung |
JPH05171428A (ja) | 1991-12-12 | 1993-07-09 | Mitsubishi Materials Corp | 柱状スパッタリング用ターゲット |
JPH06264233A (ja) | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Tft製造用スパッタリングタ−ゲット |
JPH0726373A (ja) * | 1993-07-09 | 1995-01-27 | Asahi Glass Co Ltd | 回転カソードターゲットとその製造方法および該ターゲットを用いて形成される膜 |
JPH08218164A (ja) | 1995-02-13 | 1996-08-27 | Toshiba Corp | 軟磁性薄膜形成用スパッタリングターゲット |
JP3462927B2 (ja) | 1995-03-16 | 2003-11-05 | 株式会社日立製作所 | 成膜装置及び成膜装置用治具並びに成膜方法 |
JP3840735B2 (ja) | 1996-04-12 | 2006-11-01 | 旭硝子株式会社 | 酸化物膜の製造方法 |
US5942090A (en) | 1996-04-12 | 1999-08-24 | Asahi Glass Company Ltd. | Methods of producing a laminate |
JPH1068072A (ja) | 1996-08-26 | 1998-03-10 | Japan Energy Corp | Itoシリンドリカルターゲットおよびその製造方法 |
JPH10130827A (ja) | 1996-10-28 | 1998-05-19 | Mitsubishi Materials Corp | MgOターゲット及びその製造方法 |
JPH10195609A (ja) | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JPH11269637A (ja) | 1998-03-24 | 1999-10-05 | Sumitomo Metal Mining Co Ltd | 大型スパッタリングターゲットの製造方法 |
DE10043748B4 (de) | 2000-09-05 | 2004-01-15 | W. C. Heraeus Gmbh & Co. Kg | Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung |
DE10063383C1 (de) | 2000-12-19 | 2002-03-14 | Heraeus Gmbh W C | Verfahren zur Herstellung eines Rohrtargets und Verwendung |
JP4836359B2 (ja) | 2001-06-28 | 2011-12-14 | 株式会社東芝 | スパッタターゲット、ゲート絶縁膜および電子部品 |
CN1289709C (zh) | 2001-08-13 | 2006-12-13 | 贝卡尔特股份有限公司 | 用于制造溅射靶的方法 |
AU2003275239A1 (en) * | 2002-09-30 | 2004-04-23 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
JP4263900B2 (ja) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
US20050279630A1 (en) * | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
JP4650315B2 (ja) | 2005-03-25 | 2011-03-16 | 株式会社ブリヂストン | In−Ga−Zn−O膜の成膜方法 |
DE102006055662B3 (de) | 2006-11-23 | 2008-06-26 | Gfe Metalle Und Materialien Gmbh | Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen |
JP5215192B2 (ja) | 2007-01-05 | 2013-06-19 | 株式会社東芝 | スパッタリングターゲット |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
CN103030381B (zh) * | 2007-07-06 | 2015-05-27 | 住友金属矿山株式会社 | 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材 |
JP4957968B2 (ja) | 2007-11-12 | 2012-06-20 | 三菱マテリアル株式会社 | Cu−In−Ga三元系焼結合金スパッタリングターゲットおよびその製造方法 |
JP4957969B2 (ja) | 2007-11-12 | 2012-06-20 | 三菱マテリアル株式会社 | Cu−In−Ga三元系焼結合金スパッタリングターゲットの製造方法 |
US20100108503A1 (en) * | 2008-10-31 | 2010-05-06 | Applied Quantum Technology, Llc | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
US20100200395A1 (en) * | 2009-02-06 | 2010-08-12 | Anton Dietrich | Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses |
DE102009015638A1 (de) * | 2009-03-24 | 2010-09-30 | Wieland Dental + Technik Gmbh & Co. Kg | Rohrförmiges Sputtertarget und Verfahren zu seiner Herstellung |
US7785921B1 (en) | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
EP2287356A1 (en) * | 2009-07-31 | 2011-02-23 | Bekaert Advanced Coatings NV. | Sputter target, method and apparatus for manufacturing sputter targets |
JP5149262B2 (ja) | 2009-11-05 | 2013-02-20 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛系焼結体ターゲット及びその製造法 |
JP5254290B2 (ja) | 2010-09-01 | 2013-08-07 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
-
2011
- 2011-02-22 DE DE102011012034A patent/DE102011012034A1/de not_active Withdrawn
-
2012
- 2012-01-12 EP EP12000166.4A patent/EP2492368B1/de active Active
- 2012-01-12 PL PL12000166T patent/PL2492368T3/pl unknown
- 2012-02-03 US US13/365,365 patent/US9334564B2/en active Active
- 2012-02-06 TW TW101103803A patent/TWI527923B/zh not_active IP Right Cessation
- 2012-02-17 KR KR1020120016571A patent/KR20120096426A/ko not_active Application Discontinuation
- 2012-02-21 CN CN201210041442.1A patent/CN102644053B/zh active Active
- 2012-02-22 JP JP2012036109A patent/JP5777539B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9334564B2 (en) | 2016-05-10 |
JP2012172265A (ja) | 2012-09-10 |
KR20120096426A (ko) | 2012-08-30 |
CN102644053A (zh) | 2012-08-22 |
DE102011012034A1 (de) | 2012-08-23 |
CN102644053B (zh) | 2016-04-20 |
TWI527923B (zh) | 2016-04-01 |
JP5777539B2 (ja) | 2015-09-09 |
TW201237202A (en) | 2012-09-16 |
US20120213917A1 (en) | 2012-08-23 |
EP2492368B1 (de) | 2021-04-07 |
EP2492368A1 (de) | 2012-08-29 |
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