PL2492368T3 - Tarcza rozpylania jonowego w kształcie rury - Google Patents

Tarcza rozpylania jonowego w kształcie rury

Info

Publication number
PL2492368T3
PL2492368T3 PL12000166T PL12000166T PL2492368T3 PL 2492368 T3 PL2492368 T3 PL 2492368T3 PL 12000166 T PL12000166 T PL 12000166T PL 12000166 T PL12000166 T PL 12000166T PL 2492368 T3 PL2492368 T3 PL 2492368T3
Authority
PL
Poland
Prior art keywords
sputter target
tubular sputter
tubular
target
sputter
Prior art date
Application number
PL12000166T
Other languages
English (en)
Inventor
Christoph Simons
Martin Schlott
Josef Heindel
Carl-Christoph Stahr
Original Assignee
Materion Advanced Materials Germany Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materion Advanced Materials Germany Gmbh filed Critical Materion Advanced Materials Germany Gmbh
Publication of PL2492368T3 publication Critical patent/PL2492368T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06Metallic material
    • C23C4/08Metallic material containing only metal elements
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123Spraying molten metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/342Hollow targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12389All metal or with adjacent metals having variation in thickness
    • Y10T428/12396Discontinuous surface component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
PL12000166T 2011-02-22 2012-01-12 Tarcza rozpylania jonowego w kształcie rury PL2492368T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011012034A DE102011012034A1 (de) 2011-02-22 2011-02-22 Rohrförmiges Sputtertarget
EP12000166.4A EP2492368B1 (de) 2011-02-22 2012-01-12 Rohrförmiges Sputtertarget

Publications (1)

Publication Number Publication Date
PL2492368T3 true PL2492368T3 (pl) 2021-08-02

Family

ID=45507397

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12000166T PL2492368T3 (pl) 2011-02-22 2012-01-12 Tarcza rozpylania jonowego w kształcie rury

Country Status (8)

Country Link
US (1) US9334564B2 (pl)
EP (1) EP2492368B1 (pl)
JP (1) JP5777539B2 (pl)
KR (1) KR20120096426A (pl)
CN (1) CN102644053B (pl)
DE (1) DE102011012034A1 (pl)
PL (1) PL2492368T3 (pl)
TW (1) TWI527923B (pl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948634B2 (ja) 2010-09-01 2012-06-06 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP5140169B2 (ja) 2011-03-01 2013-02-06 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP5026611B1 (ja) 2011-09-21 2012-09-12 Jx日鉱日石金属株式会社 積層構造体及びその製造方法
JP5074628B1 (ja) * 2012-01-05 2012-11-14 Jx日鉱日石金属株式会社 インジウム製スパッタリングターゲット及びその製造方法
KR20160085907A (ko) * 2012-08-22 2016-07-18 제이엑스금속주식회사 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
TWI461556B (zh) * 2012-10-24 2014-11-21 Solar Applied Mat Tech Corp 四方晶結構之銦靶材
CN103789729A (zh) * 2012-10-31 2014-05-14 光洋应用材料科技股份有限公司 四方晶结构的铟靶材
JP5968808B2 (ja) * 2013-03-07 2016-08-10 Jx金属株式会社 インジウム製円筒形ターゲット部材及び円筒形ターゲット部材の製造方法
US9922807B2 (en) * 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof
JP6217295B2 (ja) * 2013-10-07 2017-10-25 三菱マテリアル株式会社 Inスパッタリングターゲット
JP6305083B2 (ja) * 2014-02-04 2018-04-04 Jx金属株式会社 スパッタリングターゲット及び、それの製造方法
EP2947175A1 (en) * 2014-05-21 2015-11-25 Heraeus Deutschland GmbH & Co. KG CuSn, CuZn and Cu2ZnSn sputter targets
EP3085809B1 (en) 2015-04-20 2018-07-18 Materion Advanced Materials Germany GmbH Process for preparing a tubular sputtering target
JP6456810B2 (ja) * 2015-12-11 2019-01-23 Jx金属株式会社 In−Cu合金スパッタリングターゲット及びその製造方法
JP2017141515A (ja) * 2017-03-17 2017-08-17 Jx金属株式会社 スパッタリングターゲット及び、それの製造方法
US11450516B2 (en) 2019-08-14 2022-09-20 Honeywell International Inc. Large-grain tin sputtering target
CN112030119A (zh) * 2020-08-27 2020-12-04 苏州思菲科新材料科技有限公司 一种铟管靶及其制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234968A (ja) 1984-05-07 1985-11-21 Nippon Mining Co Ltd ボンデツドタ−ゲツトとその製造法
DE4115663A1 (de) * 1991-05-14 1992-11-19 Leybold Ag Verfahren zur herstellung eines targets, insbesondere eines rohrtargets einer sputtervorrichtung
JPH05171428A (ja) 1991-12-12 1993-07-09 Mitsubishi Materials Corp 柱状スパッタリング用ターゲット
JPH06264233A (ja) 1993-03-12 1994-09-20 Nikko Kinzoku Kk Tft製造用スパッタリングタ−ゲット
JPH0726373A (ja) * 1993-07-09 1995-01-27 Asahi Glass Co Ltd 回転カソードターゲットとその製造方法および該ターゲットを用いて形成される膜
JPH08218164A (ja) 1995-02-13 1996-08-27 Toshiba Corp 軟磁性薄膜形成用スパッタリングターゲット
JP3462927B2 (ja) 1995-03-16 2003-11-05 株式会社日立製作所 成膜装置及び成膜装置用治具並びに成膜方法
JP3840735B2 (ja) 1996-04-12 2006-11-01 旭硝子株式会社 酸化物膜の製造方法
US5942090A (en) 1996-04-12 1999-08-24 Asahi Glass Company Ltd. Methods of producing a laminate
JPH1068072A (ja) 1996-08-26 1998-03-10 Japan Energy Corp Itoシリンドリカルターゲットおよびその製造方法
JPH10130827A (ja) 1996-10-28 1998-05-19 Mitsubishi Materials Corp MgOターゲット及びその製造方法
JPH10195609A (ja) 1996-12-27 1998-07-28 Dowa Mining Co Ltd 結晶方位の制御されたfcc金属及びその製造方法
JPH11269637A (ja) 1998-03-24 1999-10-05 Sumitomo Metal Mining Co Ltd 大型スパッタリングターゲットの製造方法
DE10043748B4 (de) 2000-09-05 2004-01-15 W. C. Heraeus Gmbh & Co. Kg Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung
DE10063383C1 (de) 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
JP4836359B2 (ja) 2001-06-28 2011-12-14 株式会社東芝 スパッタターゲット、ゲート絶縁膜および電子部品
CN1289709C (zh) 2001-08-13 2006-12-13 贝卡尔特股份有限公司 用于制造溅射靶的方法
AU2003275239A1 (en) * 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
JP4263900B2 (ja) 2002-11-13 2009-05-13 日鉱金属株式会社 Taスパッタリングターゲット及びその製造方法
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
JP4650315B2 (ja) 2005-03-25 2011-03-16 株式会社ブリヂストン In−Ga−Zn−O膜の成膜方法
DE102006055662B3 (de) 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
JP5215192B2 (ja) 2007-01-05 2013-06-19 株式会社東芝 スパッタリングターゲット
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
JP4957968B2 (ja) 2007-11-12 2012-06-20 三菱マテリアル株式会社 Cu−In−Ga三元系焼結合金スパッタリングターゲットおよびその製造方法
JP4957969B2 (ja) 2007-11-12 2012-06-20 三菱マテリアル株式会社 Cu−In−Ga三元系焼結合金スパッタリングターゲットの製造方法
US20100108503A1 (en) * 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
US20100200395A1 (en) * 2009-02-06 2010-08-12 Anton Dietrich Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses
DE102009015638A1 (de) * 2009-03-24 2010-09-30 Wieland Dental + Technik Gmbh & Co. Kg Rohrförmiges Sputtertarget und Verfahren zu seiner Herstellung
US7785921B1 (en) 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
EP2287356A1 (en) * 2009-07-31 2011-02-23 Bekaert Advanced Coatings NV. Sputter target, method and apparatus for manufacturing sputter targets
JP5149262B2 (ja) 2009-11-05 2013-02-20 出光興産株式会社 酸化インジウム−酸化亜鉛系焼結体ターゲット及びその製造法
JP5254290B2 (ja) 2010-09-01 2013-08-07 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP4948634B2 (ja) 2010-09-01 2012-06-06 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法

Also Published As

Publication number Publication date
US9334564B2 (en) 2016-05-10
JP2012172265A (ja) 2012-09-10
KR20120096426A (ko) 2012-08-30
CN102644053A (zh) 2012-08-22
DE102011012034A1 (de) 2012-08-23
CN102644053B (zh) 2016-04-20
TWI527923B (zh) 2016-04-01
JP5777539B2 (ja) 2015-09-09
TW201237202A (en) 2012-09-16
US20120213917A1 (en) 2012-08-23
EP2492368B1 (de) 2021-04-07
EP2492368A1 (de) 2012-08-29

Similar Documents

Publication Publication Date Title
PL2492368T3 (pl) Tarcza rozpylania jonowego w kształcie rury
EP2707852A4 (en) FOLLOW-UP
EP2661514A4 (en) sputtering
GB2509634B (en) Maintaining multiple target copies
IL228927A (en) Purpose of Copper Alloy Thesis - High-degree cleaning
SG10201607223SA (en) High-purity copper-manganese-alloy sputtering target
EP2699708A4 (en) TARGETS OF LITHIUM SPRAY
EP2674511A4 (en) TITAN sputtering target
IL223879A (en) Purpose of thesis with tantalum
IL223430A (en) Purpose of thesis with tantalum
GB2498088B (en) Weed control
GB2495388B (en) Target sensor
SG11201407011UA (en) Sputtering target
EP2671353A4 (en) METHOD FOR ACHIEVING A TARGET DAMAGE QUOTE
EP2853617A4 (en) SPUTTER-TARGET
SG11201400327SA (en) Titanium target for sputtering
PL2671043T3 (pl) Pocisk znakujący
GB201100839D0 (en) Radar
GB2489611B8 (en) Small missile
SG10201602898RA (en) Object tracking
PL2769002T3 (pl) Rurowy target
GB2489220B (en) Magnetron
GB201104118D0 (en) Novel target
GB201111419D0 (en) Molecular target
GB2488319B (en) Weapon