NO981311L - Fremgangsmåte for fremstilling av silisium for bruk i solceller - Google Patents

Fremgangsmåte for fremstilling av silisium for bruk i solceller

Info

Publication number
NO981311L
NO981311L NO981311A NO981311A NO981311L NO 981311 L NO981311 L NO 981311L NO 981311 A NO981311 A NO 981311A NO 981311 A NO981311 A NO 981311A NO 981311 L NO981311 L NO 981311L
Authority
NO
Norway
Prior art keywords
solidification
solar cells
silicon
producing silicon
refining
Prior art date
Application number
NO981311A
Other languages
English (en)
Other versions
NO981311D0 (no
Inventor
Hiroyuki Baba
Masamichi Abe
Kazuhiro Hanazawa
Naomichi Nakamura
Noriyoshi Yuge
Yasuhiko Sakaguchi
Yoshiei Kato
Tetsuya Fujii
Original Assignee
Kawasaki Steel Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7487697A external-priority patent/JPH10265214A/ja
Priority claimed from JP9313289A external-priority patent/JPH10324514A/ja
Priority claimed from JP9313291A external-priority patent/JPH10324515A/ja
Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co
Publication of NO981311D0 publication Critical patent/NO981311D0/no
Publication of NO981311L publication Critical patent/NO981311L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Fremgangsmåte for fremstilling av høyraffinert silisium for bruk i solceller ved en enkelt-trinns størkningsraffinering, helling av silisium i en form og gradvis fraksjoneringsstørkning av dette med vurdering av størkningen av smelteoverflaten, etterfulgt av raffinering av det størknede silisium ved sonesmelting eller anvendelse av kontinuerlig støping ved bruk av en elektromagnetisk form, eller sonesmelting i kombinasjon med kontinuerlig støping, og eventuelt utførelse av rettet størkning for å konsentrere urenheter, utluting og resirkulering.
NO981311A 1997-03-24 1998-03-23 Fremgangsmåte for fremstilling av silisium for bruk i solceller NO981311L (no)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6958997 1997-03-24
JP7154697 1997-03-25
JP7487697A JPH10265214A (ja) 1997-03-27 1997-03-27 シリコンの精製方法
JP9313289A JPH10324514A (ja) 1997-03-25 1997-11-14 金属シリコンの再利用方法
JP9313291A JPH10324515A (ja) 1997-03-24 1997-11-14 太陽電池用シリコンの製造方法

Publications (2)

Publication Number Publication Date
NO981311D0 NO981311D0 (no) 1998-03-23
NO981311L true NO981311L (no) 1998-09-25

Family

ID=27524195

Family Applications (1)

Application Number Title Priority Date Filing Date
NO981311A NO981311L (no) 1997-03-24 1998-03-23 Fremgangsmåte for fremstilling av silisium for bruk i solceller

Country Status (7)

Country Link
US (1) US6090361A (no)
EP (1) EP0867405B1 (no)
CN (1) CN1119281C (no)
BR (1) BR9800953A (no)
CA (1) CA2232777C (no)
NO (1) NO981311L (no)
RU (1) RU2154606C2 (no)

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JP3885452B2 (ja) 1999-04-30 2007-02-21 三菱マテリアル株式会社 結晶シリコンの製造方法
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
US6632413B2 (en) 2000-08-21 2003-10-14 Astropower, Inc. Method for purifying silicon
WO2002053496A1 (fr) * 2000-12-28 2002-07-11 Sumitomo Mitsubishi Silicon Corporation Procede de moulage en continu de silicium
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
WO2004030044A2 (en) * 2002-09-27 2004-04-08 Astropower, Inc. Methods and systems for purifying elements
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
JP2007513048A (ja) * 2003-12-04 2007-05-24 ダウ・コーニング・コーポレイション 太陽電池グレードのケイ素を生産するための、冶金グレードのケイ素から不純物を除去する方法
US7638108B2 (en) * 2004-04-13 2009-12-29 Si Options, Llc High purity silicon-containing products
US7588745B2 (en) * 2004-04-13 2009-09-15 Si Options, Llc Silicon-containing products
US8470279B2 (en) * 2004-04-13 2013-06-25 Si Options, Llc High purity silicon-containing products and method of manufacture
JP2005343780A (ja) * 2004-06-03 2005-12-15 Iis Materials:Kk スクラップシリコンのリサイクル方法
US20060051670A1 (en) * 2004-09-03 2006-03-09 Shin-Etsu Chemical Co., Ltd. Non-aqueous electrolyte secondary cell negative electrode material and metallic silicon power therefor
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
JP4689373B2 (ja) 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
CN101426722B (zh) * 2006-03-15 2013-06-05 反应科学公司 制造用于太阳能电池及其它应用的硅的方法
US7682585B2 (en) 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
CN101085678B (zh) * 2006-06-09 2010-11-10 贵阳宝源阳光硅业有限公司 太阳能级硅的制备方法
EP2058279A4 (en) * 2006-08-31 2012-01-25 Mitsubishi Materials Corp METAL SILICON AND METHOD FOR MANUFACTURING THE SAME
CN101511731B (zh) * 2006-09-14 2012-02-22 希利贝坎库公司 用于提纯低级硅材料的方法和装置
CN101307487B (zh) * 2007-05-16 2010-05-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置
CN100595352C (zh) * 2007-07-17 2010-03-24 佳科太阳能硅(龙岩)有限公司 太阳能级多晶硅大锭的制备方法
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
MX2010002728A (es) * 2007-09-13 2010-08-02 Silicium Becancour Inc Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.
DE102007050010A1 (de) * 2007-10-17 2009-06-25 Jan-Philipp Mai Verfahren und Vorrichtung zur Herstellung von Silizium
CN101477949A (zh) * 2008-01-04 2009-07-08 陈科 硅片和其制造方法及装置
US20100055020A1 (en) * 2008-08-27 2010-03-04 Bp Corporation North America Inc Apparatus and Method for a Crucible Design and Tipping Mechanism for Silicon Casting
WO2010080777A1 (en) * 2009-01-08 2010-07-15 Bp Corporation North America Inc. Impurity reducing process for silicon and purified silicon material
US7888158B1 (en) * 2009-07-21 2011-02-15 Sears Jr James B System and method for making a photovoltaic unit
TWI393805B (zh) * 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
WO2011061847A1 (ja) * 2009-11-20 2011-05-26 Kaneko Kyojiro シリコン電磁鋳造装置
TWI397617B (zh) 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
KR101180353B1 (ko) * 2010-07-01 2012-09-06 연세대학교 산학협력단 태양전지용 실리콘제조를 위한 ａｃｉｄ ｌｅａｃｈｉｎｇ을 이용한 ＭＧ-Ｓｉ중 불순물의 정련방법
TWI403461B (zh) 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
BRPI1003984A2 (pt) * 2010-12-01 2012-07-17 Barra Do Guaicui S A processo para produção de silìcio metálico grau metalúrgico de elevada pureza a partir da purificação com metais e outros compostos, seguida de lixiviação
RU2465201C1 (ru) * 2011-02-14 2012-10-27 Общество с ограниченной ответственностью "ЭНЕРГИЯ" Способ получения слитков поликристаллического кремния
RU2465200C1 (ru) * 2011-02-14 2012-10-27 Общество с ограниченной ответственностью "ЭНЕРГИЯ" Способ рафинирования металлургического кремния
EP2530187A1 (en) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Refining of silicon by directional solidification in an oxygen-containing atmosphere
TWI499558B (zh) * 2012-08-31 2015-09-11 Silicor Materials Inc 在定向凝固期間以反應蓋玻璃覆蓋熔融矽
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
EP3434646A1 (en) * 2017-07-25 2019-01-30 Total Solar International Method for recycling sub-micron si-particles from a si wafer production process
RU2707053C1 (ru) * 2018-12-25 2019-11-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" Способ очистки металлургического кремния от углерода

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JP3020422B2 (ja) 1994-12-22 2000-03-15 松下電器産業株式会社 半導体記憶装置

Also Published As

Publication number Publication date
EP0867405A1 (en) 1998-09-30
NO981311D0 (no) 1998-03-23
BR9800953A (pt) 1999-09-28
RU2154606C2 (ru) 2000-08-20
CA2232777A1 (en) 1998-09-24
US6090361A (en) 2000-07-18
CA2232777C (en) 2001-05-15
CN1199017A (zh) 1998-11-18
EP0867405B1 (en) 2003-06-04
CN1119281C (zh) 2003-08-27

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