NO921094L - Hoey-mobilitets integrerte drivere for aktive matriseskjermer - Google Patents

Hoey-mobilitets integrerte drivere for aktive matriseskjermer

Info

Publication number
NO921094L
NO921094L NO92921094A NO921094A NO921094L NO 921094 L NO921094 L NO 921094L NO 92921094 A NO92921094 A NO 92921094A NO 921094 A NO921094 A NO 921094A NO 921094 L NO921094 L NO 921094L
Authority
NO
Norway
Prior art keywords
glass
crystal silicon
drivers
low
layer
Prior art date
Application number
NO92921094A
Other languages
English (en)
Norwegian (no)
Other versions
NO921094D0 (no
Inventor
Kalluri R Sarma
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of NO921094D0 publication Critical patent/NO921094D0/no
Publication of NO921094L publication Critical patent/NO921094L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Element Separation (AREA)
NO92921094A 1991-03-28 1992-03-19 Hoey-mobilitets integrerte drivere for aktive matriseskjermer NO921094L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67699891A 1991-03-28 1991-03-28

Publications (2)

Publication Number Publication Date
NO921094D0 NO921094D0 (no) 1992-03-19
NO921094L true NO921094L (no) 1992-09-29

Family

ID=24716883

Family Applications (1)

Application Number Title Priority Date Filing Date
NO92921094A NO921094L (no) 1991-03-28 1992-03-19 Hoey-mobilitets integrerte drivere for aktive matriseskjermer

Country Status (10)

Country Link
US (1) US5281840A (de)
EP (1) EP0510368B1 (de)
JP (1) JP3314345B2 (de)
KR (1) KR100201715B1 (de)
CA (1) CA2061796C (de)
DE (1) DE69209126T2 (de)
DK (1) DK0510368T3 (de)
FI (1) FI921312A (de)
IL (1) IL101218A (de)
NO (1) NO921094L (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2566175B2 (ja) * 1990-04-27 1996-12-25 セイコー電子工業株式会社 半導体装置及びその製造方法
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3254007B2 (ja) * 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
EP0604231B8 (de) * 1992-12-25 2001-04-11 Canon Kabushiki Kaisha Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
US5258323A (en) * 1992-12-29 1993-11-02 Honeywell Inc. Single crystal silicon on quartz
WO1994015364A1 (en) * 1992-12-29 1994-07-07 Honeywell Inc. Depletable semiconductor on insulator low threshold complementary transistors
US5344524A (en) * 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
KR100333153B1 (ko) * 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
WO1995018463A1 (en) * 1993-12-30 1995-07-06 Honeywell Inc. Single crystal silicon on quartz
US5479048A (en) * 1994-02-04 1995-12-26 Analog Devices, Inc. Integrated circuit chip supported by a handle wafer and provided with means to maintain the handle wafer potential at a desired level
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6943764B1 (en) 1994-04-22 2005-09-13 Semiconductor Energy Laboratory Co., Ltd. Driver circuit for an active matrix display device
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5536950A (en) * 1994-10-28 1996-07-16 Honeywell Inc. High resolution active matrix LCD cell design
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6011291A (en) * 1997-02-21 2000-01-04 The United States Of America As Represented By The Secretary Of The Navy Video display with integrated control circuitry formed on a dielectric substrate
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
DE69836216T2 (de) * 1997-12-09 2007-08-30 Seiko Epson Corp. Herstellungsverfahren einer elektrooptischen Vorrichtung
US5977253A (en) * 1998-03-02 1999-11-02 Occidental Chemical Corporation Phenolic thermosetting resins containing polyols
US6300241B1 (en) * 1998-08-19 2001-10-09 National Semiconductor Corporation Silicon interconnect passivation and metallization process optimized to maximize reflectance
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US6331473B1 (en) * 1998-12-29 2001-12-18 Seiko Epson Corporation SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7113896B2 (en) * 2001-05-11 2006-09-26 Zhen Zhang System and methods for processing biological expression data
JP2006512749A (ja) 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 種々の照射パターンを有するシングルショット半導体処理システム及び方法
TWI360707B (en) * 2002-08-19 2012-03-21 Univ Columbia Process and system for laser crystallization proc
KR20060072097A (ko) * 2002-12-09 2006-06-27 픽셀리전트 테크놀로지스 엘엘씨 프로그램가능 리소그래피 마스크 및 나노 사이즈 반도체입자를 기반으로 한 가역성 광탈색재와 그 응용
US8993221B2 (en) 2012-02-10 2015-03-31 Pixelligent Technologies, Llc Block co-polymer photoresist
WO2005029180A2 (en) 2003-03-04 2005-03-31 Pixelligent Technologies Llc Applications of semiconductor nano-sized particles for photolithography
US8383316B2 (en) * 2006-07-10 2013-02-26 Pixelligent Technologies, Llc Resists for lithography
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI359441B (en) * 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4540359B2 (ja) * 2004-02-10 2010-09-08 シャープ株式会社 半導体装置およびその製造方法
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP2009505432A (ja) * 2005-08-16 2009-02-05 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のハイ・スループット結晶化
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
JP5243271B2 (ja) * 2007-01-10 2013-07-24 シャープ株式会社 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子
US7989322B2 (en) 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
KR20100074193A (ko) 2007-09-21 2010-07-01 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 트랜지스터에서 사용되는 측면 결정화된 반도체 섬의 집합
WO2009042784A1 (en) * 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
WO2009067687A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
EP2248155A4 (de) * 2008-02-29 2011-10-05 Univ Columbia Blitzlichtausheilung für dünnfilme
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN103515445A (zh) * 2012-06-15 2014-01-15 北京大学 一种薄膜晶体管及其制备方法
KR102002858B1 (ko) 2012-08-10 2019-10-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US4024626A (en) * 1974-12-09 1977-05-24 Hughes Aircraft Company Method of making integrated transistor matrix for flat panel liquid crystal display
US3997381A (en) * 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate
JPS5598868A (en) * 1979-01-23 1980-07-28 Sumitomo Electric Ind Ltd Insulated gate type field effect semiconductor device
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS5710266A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Mis field effect semiconductor device
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
FR2572219B1 (fr) * 1984-10-23 1987-05-29 Efcis Procede de fabrication de circuits integres sur substrat isolant
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPH0777264B2 (ja) * 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法
US4857907A (en) * 1986-04-30 1989-08-15 501 Sharp Kabushiki Kaisha Liquid-crystal display device
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPS63157476A (ja) * 1986-12-22 1988-06-30 Seiko Instr & Electronics Ltd 薄膜トランジスタ
DE3739372A1 (de) * 1987-11-20 1989-06-01 Sueddeutsche Kuehler Behr Klimaanlage
US4990981A (en) * 1988-01-29 1991-02-05 Hitachi, Ltd. Thin film transistor and a liquid crystal display device using same
US4826709A (en) * 1988-02-29 1989-05-02 American Telephone And Telegraph Company At&T Bell Laboratories Devices involving silicon glasses
JPH01274474A (ja) * 1988-04-26 1989-11-02 Seiko Instr Inc 半導体装置
JPH01295464A (ja) * 1988-05-24 1989-11-29 Sony Corp 薄膜トランジスタ
JPH02137272A (ja) * 1988-11-17 1990-05-25 Ricoh Co Ltd Ｃｍｏｓ型薄膜トランジスター
JPH02143463A (ja) * 1988-11-24 1990-06-01 Ricoh Co Ltd 薄膜トランジスター
JPH0388321A (ja) * 1989-08-31 1991-04-12 Tonen Corp 多結晶シリコン薄膜
US5110748A (en) * 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display

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EP0510368A1 (de) 1992-10-28
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JP3314345B2 (ja) 2002-08-12
NO921094D0 (no) 1992-03-19
CA2061796C (en) 2002-12-24
JPH05136170A (ja) 1993-06-01
DE69209126D1 (de) 1996-04-25
CA2061796A1 (en) 1992-09-29
DK0510368T3 (da) 1996-07-29
EP0510368B1 (de) 1996-03-20
FI921312A (fi) 1992-09-29
IL101218A (en) 1994-02-27
IL101218A0 (en) 1992-11-15
FI921312A0 (fi) 1992-03-26
US5281840A (en) 1994-01-25

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