JP5243271B2 - 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 - Google Patents
半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 Download PDFInfo
- Publication number
- JP5243271B2 JP5243271B2 JP2008553037A JP2008553037A JP5243271B2 JP 5243271 B2 JP5243271 B2 JP 5243271B2 JP 2008553037 A JP2008553037 A JP 2008553037A JP 2008553037 A JP2008553037 A JP 2008553037A JP 5243271 B2 JP5243271 B2 JP 5243271B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- semiconductor element
- manufacturing
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 190
- 239000002184 metal Substances 0.000 claims abstract description 190
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 121
- 239000010703 silicon Substances 0.000 claims abstract description 121
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 67
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 66
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 82
- 239000010936 titanium Substances 0.000 claims description 36
- 239000011521 glass Substances 0.000 claims description 30
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000003776 cleavage reaction Methods 0.000 claims description 16
- 230000007017 scission Effects 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 293
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 85
- 239000010408 film Substances 0.000 description 75
- 230000008018 melting Effects 0.000 description 20
- 238000002844 melting Methods 0.000 description 20
- 238000012546 transfer Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910021341 titanium silicide Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-BJUDXGSMSA-N Boron-10 Chemical compound [10B] ZOXJGFHDIHLPTG-BJUDXGSMSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823443—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
上記金属層の好ましい形態としては、シリコン層側から第一金属層及び第二金属層がこの順に積層された構造を有する形態が挙げられる。すなわち、上記金属シリサイド形成工程は、シリコン層、第一金属層、及び、該第一金属層を構成する第一金属とは異なる第二金属から構成された第二金属層がこの順に積層された構造を有する半導体素子を基板上に転写し、加熱により、シリコン層中の第一金属層側の部分を構成するシリコンと第一金属層を構成する第一金属とから金属シリサイドを形成するものであることが好ましい。本明細書で「第一金属層」とは、金属シリサイドを形成するために行う加熱により、シリコンと金属シリサイドを形成する金属(第一金属)から構成される層のことである。「第二金属層」とは、金属シリサイドを形成するために行う加熱により、シリコンと金属シリサイドを形成することはない金属(第二金属)から構成される層のことである。これによれば、第一金属層を構成する第一金属は全部が金属シリサイド化されるものの、第二金属層を構成する第二金属は金属シリサイド化されないため、第一金属層の膜厚を調整することにより、シリコン層の全体が金属シリサイド化されることによる半導体素子の高抵抗化を容易に防ぐことができる。
上記金属シリサイド形成工程は、シリコン層、第一金属層、及び、該第一金属層を構成する第一金属とは異なる第二金属から構成された第二金属層がこの順に積層された構造を有する半導体素子を基板上に転写し、加熱により、シリコン層中の第一金属層側の部分を構成するシリコンと第一金属層を構成する第一金属とから金属シリサイドを形成するものであることが好ましい。
上記第一金属層は、膜厚が、金属シリサイドを形成する直前のシリコン層の膜厚の20%以下であることが好ましい。
上記第一金属層は、チタン、モリブデン、タングステン、タンタル、コバルト、ニッケル、白金及びロジウムからなる群より選択された少なくとも一種の金属から構成されることが好ましい。
上記第一金属層は、チタンから構成され、上記第二金属層は、窒化チタンから構成されることが好ましい。
上記半導体素子の製造方法は、金属シリサイドを形成する前に、金属層の側からシリコン層中に水素イオン又はヘリウムを注入して剥離層を形成する剥離層形成工程と、該剥離層を用いてシリコン層を劈開する劈開工程とを含むことが好ましい。
上記半導体素子の製造方法は、金属シリサイドを形成する前に、劈開後のシリコン層をエッチングするエッチング工程を含むことが好ましい。
図1−1〜1−11、図2、及び、図3−1〜3−5は、実施形態1に係る半導体装置の製造工程を示す断面模式図である。
以下(1)単結晶シリコン素子(半導体素子)の作製(図1−1〜1−11)、(2)チップ化した単結晶シリコン素子を転写する基板の作製(図2)、及び、(3)半導体装置の作製(図3−1〜3−5)の順に説明する。
まず、図1−1に示すように、急速酸化法等を用いて、単結晶シリコン基板(単結晶シリコンウエハ)1上に熱酸化膜2を形成する。
次に、図1−2に示すように、イオン打ち込み法やイオントーピング法等を用いて、単結晶シリコン基板1の内部にボロン9をイオン注入する。続いて、熱処理を行い、イオン注入されたボロン9を拡散及び活性化させることによって、Pウェル領域4を形成する。
次に、図1−5に示すように、ポリシリコン(p−Si)を用いてゲート電極8をパターン形成する。なお、ゲート電極8の膜厚は、300nmである。
次に、単結晶シリコン素子を所望の大きさにチップ化する。
図2に示すように、チップ化した単結晶シリコン素子(単結晶シリコンチップ)を転写するガラス基板40上には、ポリシリコン(p−Si)TFT300を形成する。また、単結晶シリコンチップを転写する領域は、エッチングしてガラス基板40の表面を出しておく。このとき、単結晶シリコンチップを転写する領域にまでSiO2膜42を形成することにより、ガラス基板40の表面の代わりにSiO2膜42の表面を出しておいてもよい。なお、本実施形態では、ガラス基板40として、歪点が650℃の高歪点ガラス基板を用いている。これにより、転写後の熱処理でガラス基板40が歪み、後工程で位置合わせができなくなるのを防ぐことができる。
次に、図3−1に示すように、単結晶シリコンチップ100中のTEOS膜21及びガラス基板40の両方の表面の有機物を除去し、表面をSC−1処理で活性化した後、単結晶シリコンチップ100をガラス基板40の表面に接着させる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を80nmとしたこと、膜厚が30nmのTi層30の代りに膜厚が20nm(単結晶シリコン層の膜厚の25%)のTi層を用いたこと以外は、実施形態1と同様である。膜厚が20nmのTi層に対しては、膜厚が略46nmの単結晶シリコン層しか消費されないので、膜厚が略34nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、膜厚が30nmのTi層30の代りに膜厚が20nm(単結晶シリコン層の膜厚の13%)のコバルト(融点:1490℃)層を用いたこと以外は、実施形態1と同様である。膜厚が20nmのコバルト層に対しては、膜厚が略70nmの単結晶シリコン層しか消費されないので、膜厚が略80nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を100nmとしたこと、及び、膜厚が30nmのTi層30の代りに膜厚が20nm(単結晶シリコン層の膜厚の20%)のニッケル(融点:1450℃)層を用いたこと以外は、実施形態1と同様である。膜厚が20nmのニッケル層に対しては、膜厚が略40nmの単結晶シリコン層しか消費されないので、膜厚が略60nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を650nmとしたこと、膜厚が30nmのTi層30の代りに膜厚が20nm(単結晶シリコン層の膜厚の8%)のコバルト層を用いたこと、及び、TiN層31の膜厚を800nmにしたこと以外は、実施形態1と同様である。膜厚が20nmのコバルト層に対しては、膜厚が182nmの単結晶シリコン層しか消費されないので、膜厚が468nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を300nmとしたこと、膜厚が30nmのTi層30の代りに膜厚が15nm(単結晶シリコン層の膜厚の5%)のコバルト層を用いたこと、及び、TiN層31の膜厚を600nmにしたこと以外は、実施形態1と同様である。膜厚が15nmのコバルト層に対しては、膜厚が54nmの単結晶シリコン層しか消費されないので、膜厚が246nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を700nmとしたこと、膜厚が30nmのTi層30の代りに膜厚が60nm(単結晶シリコン層の膜厚の9%)のタングステン(融点:3400℃)層を用いたこと、及び、TiN層31の膜厚を900nmにしたこと以外は、実施形態1と同様である。膜厚が60nmのタングステン層に対しては、膜厚が152nmの単結晶シリコン層しか消費されないので、膜厚が548nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
本実施形態は、LOCOS酸化膜6の高さ以下までエッチングした後の単結晶シリコン層10の膜厚(金属シリサイドを形成する直前の単結晶シリコン層の膜厚)を85nmとしたこと、膜厚が30nmのTi層30の代りに膜厚が25nm(単結晶シリコン層の膜厚の29%)のニッケル層を用いたこと、及び、TiN層31の膜厚を500nmにしたこと以外は、実施形態1と同様である。膜厚が25nmのニッケル層に対しては、膜厚が46nmの単結晶シリコン層しか消費されないので、膜厚が39nmの単結晶シリコン層が残る。
したがって、本実施形態によれば、実施形態1と同様の作用効果を得ることができる。
2:熱酸化膜
4:Pウェル領域(ドットを付した部分)
5:窒化シリコン膜
6:LOCOS酸化膜
7:ゲート酸化膜
8:ゲート電極(ポリシリコン層)
9:ボロン
10:単結晶シリコン層
10s、10d:N型高濃度不純物領域
10c:P型チャネル領域(ドットを付した部分)
14:層間絶縁膜
16:リン
17:水素注入領域(剥離層)
19g:ゲートコンタクトホール
19s:ソースコンタクトホール
19d:ドレインコンタクトホール
20g:ゲート配線
20s:ソース電極配線
20d:ドレイン電極配線
21:テトラエトキシシラン膜
24:水素イオン
27:チタンシリサイド層(斜線を付した部分)
30:チタン層(第一金属層)
31:窒化チタン層(第二金属層)
40:ガラス基板
41:窒化シリコン膜
42:酸化シリコン膜
43:ポリシリコン層
43c:チャネル領域
43d:ドレイン領域
43s:ソース領域
44:ゲート絶縁膜
45:ゲート電極
53a〜53c:配線
100:単結晶シリコンチップ(半導体素子)
300:ポリシリコンTFT
Claims (7)
- 基板上に半導体素子を有する半導体装置を製造する方法であって、
剥離層を形成する剥離層形成工程と、
シリコン層、第一金属層、及び、該第一金属層を構成する第一金属とは異なる第二金属から構成された第二金属層がこの順に積層された構造を有する半導体素子を基板の表面に接着する接着工程と、
剥離層を用いてシリコン層を劈開する劈開工程と、
劈開後のシリコン層をエッチングするエッチング工程と、
加熱により、シリコン層中の第一金属層側の部分を構成するシリコンと第一金属層を構成する第一金属とから金属シリサイドを形成する金属シリサイド形成工程とを含み、
該剥離層形成工程は、半導体素子を基板上に転写する前に、第二金属層が形成される側からシリコン層中に水素イオン又はヘリウムを注入するものであり、
該エッチング工程は、金属シリサイドを形成する前に行われ、
該第一金属層の膜厚が、金属シリサイドを形成する直前のシリコン層の膜厚の30%以下であることを特徴とする半導体装置の製造方法。 - 前記第一金属層は、膜厚が、金属シリサイドを形成する直前のシリコン層の膜厚の20%以下であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第一金属層は、チタン、モリブデン、タングステン、タンタル、コバルト、ニッケル、白金及びロジウムからなる群より選択された少なくとも一種の金属から構成されることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記第一金属層は、チタンから構成され、
前記第二金属層は、窒化チタンから構成されることを特徴とする請求項3記載の半導体装置の製造方法。 - 前記基板は、歪点が650℃以上のガラス基板であることを特徴とする請求項1〜4のいずれかに記載の半導体装置の製造方法。
- 前記金属シリサイドの形成は、700℃以下の加熱で行うことを特徴とする請求項5記載の半導体装置の製造方法。
- 請求項1〜6のいずれかに記載の半導体装置の製造方法を用いることを特徴とする表示装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008553037A JP5243271B2 (ja) | 2007-01-10 | 2007-12-14 | 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007002821 | 2007-01-10 | ||
JP2007002821 | 2007-01-10 | ||
PCT/JP2007/074157 WO2008084628A1 (ja) | 2007-01-10 | 2007-12-14 | 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 |
JP2008553037A JP5243271B2 (ja) | 2007-01-10 | 2007-12-14 | 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008084628A1 JPWO2008084628A1 (ja) | 2010-04-30 |
JP5243271B2 true JP5243271B2 (ja) | 2013-07-24 |
Family
ID=39608527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008553037A Active JP5243271B2 (ja) | 2007-01-10 | 2007-12-14 | 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100059892A1 (ja) |
EP (1) | EP2079105A4 (ja) |
JP (1) | JP5243271B2 (ja) |
CN (1) | CN101523581A (ja) |
WO (1) | WO2008084628A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5416790B2 (ja) * | 2010-01-22 | 2014-02-12 | シャープ株式会社 | 半導体装置及びその製造方法 |
US20130009302A1 (en) * | 2010-02-01 | 2013-01-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US9238875B2 (en) | 2011-02-01 | 2016-01-19 | Sunset Peak International Limited | Multilayer structure for a diamond growth and a method of providing the same |
US20130160700A1 (en) * | 2011-12-21 | 2013-06-27 | Gemesis Diamond Company | Step heating process for growing high quality diamond |
CN103474454A (zh) * | 2013-05-20 | 2013-12-25 | 复旦大学 | 一种半导体-金属-半导体叠层结构及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250739A (ja) * | 1995-03-13 | 1996-09-27 | Nec Corp | 半導体装置の製造方法 |
JP2002208706A (ja) * | 2001-01-10 | 2002-07-26 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2003158091A (ja) * | 2001-11-20 | 2003-05-30 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2005285850A (ja) * | 2004-03-26 | 2005-10-13 | Sharp Corp | 半導体基板、半導体装置、及びそれらの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477310A (en) * | 1983-08-12 | 1984-10-16 | Tektronix, Inc. | Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas |
JPH07120638B2 (ja) | 1989-07-25 | 1995-12-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
CA2061796C (en) * | 1991-03-28 | 2002-12-24 | Kalluri R. Sarma | High mobility integrated drivers for active matrix displays |
US5807783A (en) * | 1996-10-07 | 1998-09-15 | Harris Corporation | Surface mount die by handle replacement |
JP3738798B2 (ja) * | 1997-07-03 | 2006-01-25 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法及び液晶パネルの製造方法 |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
KR20010043359A (ko) * | 1999-03-10 | 2001-05-25 | 모리시타 요이찌 | 박막 트랜지스터와 패널 및 그들의 제조 방법 |
KR100502673B1 (ko) * | 2002-07-05 | 2005-07-22 | 주식회사 하이닉스반도체 | 반도체소자의 티타늄막 형성방법 및 배리어금속막 형성방법 |
JP4794810B2 (ja) * | 2003-03-20 | 2011-10-19 | シャープ株式会社 | 半導体装置の製造方法 |
JP4610982B2 (ja) * | 2003-11-11 | 2011-01-12 | シャープ株式会社 | 半導体装置の製造方法 |
JP4907096B2 (ja) * | 2004-04-23 | 2012-03-28 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
US7575959B2 (en) * | 2004-11-26 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP4885123B2 (ja) * | 2005-03-25 | 2012-02-29 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP4589827B2 (ja) | 2005-06-27 | 2010-12-01 | 株式会社イノアックコーポレーション | 吸気ダクト |
-
2007
- 2007-12-14 US US12/447,821 patent/US20100059892A1/en not_active Abandoned
- 2007-12-14 JP JP2008553037A patent/JP5243271B2/ja active Active
- 2007-12-14 WO PCT/JP2007/074157 patent/WO2008084628A1/ja active Application Filing
- 2007-12-14 CN CNA2007800366478A patent/CN101523581A/zh active Pending
- 2007-12-14 EP EP07859831A patent/EP2079105A4/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250739A (ja) * | 1995-03-13 | 1996-09-27 | Nec Corp | 半導体装置の製造方法 |
JP2002208706A (ja) * | 2001-01-10 | 2002-07-26 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2003158091A (ja) * | 2001-11-20 | 2003-05-30 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2005285850A (ja) * | 2004-03-26 | 2005-10-13 | Sharp Corp | 半導体基板、半導体装置、及びそれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100059892A1 (en) | 2010-03-11 |
EP2079105A1 (en) | 2009-07-15 |
CN101523581A (zh) | 2009-09-02 |
WO2008084628A1 (ja) | 2008-07-17 |
EP2079105A4 (en) | 2012-07-25 |
JPWO2008084628A1 (ja) | 2010-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4651924B2 (ja) | 薄膜半導体装置および薄膜半導体装置の製造方法 | |
JP5079687B2 (ja) | Soiデバイスの製造方法 | |
US7436027B2 (en) | Semiconductor device and fabrication method for the same | |
TWI241689B (en) | Semiconductor device including insulated-gate field-effect transistor, and method for manufacturing the same | |
WO2007029389A1 (ja) | 半導体装置及びその製造方法並びに表示装置 | |
JP2008529302A (ja) | デバイス性能を改善するためのデュアル・シリサイド・プロセス | |
JP2005285850A (ja) | 半導体基板、半導体装置、及びそれらの製造方法 | |
US5904508A (en) | Semiconductor device and a method of manufacturing the same | |
JP5243271B2 (ja) | 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 | |
JPH113992A (ja) | 半導体装置及びその製造方法 | |
WO2009084312A1 (ja) | 半導体装置、単結晶半導体薄膜付き基板及びそれらの製造方法 | |
JP2970620B2 (ja) | 半導体装置の製造方法 | |
JP3970814B2 (ja) | 半導体装置の製造方法 | |
JP2636786B2 (ja) | 半導体装置の製造方法 | |
WO2009113427A1 (ja) | 半導体装置、その製造方法及び表示装置 | |
JP2002237602A (ja) | 半導体装置及びその製造方法 | |
JP4300017B2 (ja) | 半導体装置の製造方法 | |
JPH06275803A (ja) | 半導体装置及びその製造方法 | |
JP2010212531A (ja) | 半導体装置の製造方法 | |
JPH02148821A (ja) | 接着半導体基板 | |
JPH11111985A (ja) | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 | |
JPS61150216A (ja) | 半導体装置の製造方法 | |
JP4076930B2 (ja) | 半導体装置の製造方法 | |
JP3387518B2 (ja) | 半導体装置 | |
JPH10284438A (ja) | 半導体集積回路及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120423 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130404 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160412 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |