NO910101L - Fremgangsmaate og anordning for loddingsformfeste av integrert krets. - Google Patents

Fremgangsmaate og anordning for loddingsformfeste av integrert krets.

Info

Publication number
NO910101L
NO910101L NO91910101A NO910101A NO910101L NO 910101 L NO910101 L NO 910101L NO 91910101 A NO91910101 A NO 91910101A NO 910101 A NO910101 A NO 910101A NO 910101 L NO910101 L NO 910101L
Authority
NO
Norway
Prior art keywords
layer
semiconductor wafer
metallization system
solder
integrated circuit
Prior art date
Application number
NO91910101A
Other languages
English (en)
Other versions
NO910101D0 (no
Inventor
Michael J Shannon
Randolf C Turnidge
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO910101D0 publication Critical patent/NO910101D0/no
Publication of NO910101L publication Critical patent/NO910101L/no

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    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Det er beskrevet en forbedret halvlederanordning som er tilpasset til å være metallurgisk bundet til et substrat. I særdeleshet innbefatter monolltisk mikrobølgeintegrert krets (MMIC) anordning (10) en halvlederskive (12) som har første og andre hovedover-flater og som definerer minst en gjennomgangsforblnd-else (34) som strekker seg derigjennom. En elektrisk krets anbragt på den første overflate av halvlederskiven (12). I henhold til denne oppfinnelse innbefatter MMIC anordningen (10) et Jord-plan metalliserings-system (32) som er tilveiebragt på den andre overflaten av halvlederskiven (12). Baksidemetalliseringssystemet (32) fremmer foretrukket "avfukting" av loddemiddel innenfor gjennomgangsforbindelser (34) for å redusere loddemiddelfeil knyttet til form-festebehandling. Baksidemetalliseringssystemet (32) innbefatter et Jord-planlag (36) og et andre lag (38) som er fremstilt av et ikke-fuktbart materiale som er avsatt innenfor gjennomgangsforbindelse (34). Tredje lag (42) er avsatt på andre lag (36), men avsluttes hosliggende en ytterkant av gjennomgangsforbindelsen (34). Det tredje laget (42) fremmer fukting utenfor gjennomgangsforbindelsen (34) under loddingsform-festebehandling.
NO91910101A 1990-01-10 1991-01-09 Fremgangsmaate og anordning for loddingsformfeste av integrert krets. NO910101L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/463,186 US5027189A (en) 1990-01-10 1990-01-10 Integrated circuit solder die-attach design and method

Publications (2)

Publication Number Publication Date
NO910101D0 NO910101D0 (no) 1991-01-09
NO910101L true NO910101L (no) 1991-07-11

Family

ID=23839186

Family Applications (1)

Application Number Title Priority Date Filing Date
NO91910101A NO910101L (no) 1990-01-10 1991-01-09 Fremgangsmaate og anordning for loddingsformfeste av integrert krets.

Country Status (8)

Country Link
US (1) US5027189A (no)
EP (1) EP0436912A1 (no)
JP (1) JPH04211137A (no)
KR (1) KR940008380B1 (no)
AU (1) AU629438B2 (no)
CA (1) CA2032266C (no)
IL (1) IL96673A (no)
NO (1) NO910101L (no)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181283B2 (ja) * 1989-08-07 2001-07-03 株式会社日立製作所 はんだ接続された電子回路装置とはんだ接続方法並びに金メッキ接続端子用はんだ
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
FR2665574B1 (fr) * 1990-08-03 1997-05-30 Thomson Composants Microondes Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede.
US5198695A (en) * 1990-12-10 1993-03-30 Westinghouse Electric Corp. Semiconductor wafer with circuits bonded to a substrate
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JPH06209058A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 半導体装置及びその製造方法，並びにその実装方法
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IL96673A0 (en) 1991-09-16
KR910014996A (ko) 1991-08-31
CA2032266C (en) 1993-04-06
JPH04211137A (ja) 1992-08-03
AU6819990A (en) 1991-07-11
US5027189A (en) 1991-06-25
NO910101D0 (no) 1991-01-09
EP0436912A1 (en) 1991-07-17
AU629438B2 (en) 1992-10-01
CA2032266A1 (en) 1993-04-06
IL96673A (en) 1993-03-15

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