NO910101D0 - Fremgangsmaate og anordning for loddingsformfeste av integrert krets. - Google Patents
Fremgangsmaate og anordning for loddingsformfeste av integrert krets.Info
- Publication number
- NO910101D0 NO910101D0 NO910101A NO910101A NO910101D0 NO 910101 D0 NO910101 D0 NO 910101D0 NO 910101 A NO910101 A NO 910101A NO 910101 A NO910101 A NO 910101A NO 910101 D0 NO910101 D0 NO 910101D0
- Authority
- NO
- Norway
- Prior art keywords
- procedure
- integrated circuit
- solar
- solar form
- integrated
- Prior art date
Links
Classifications
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- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
- Junction Field-Effect Transistors (AREA)
- Electroplating Methods And Accessories (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/463,186 US5027189A (en) | 1990-01-10 | 1990-01-10 | Integrated circuit solder die-attach design and method |
Publications (2)
Publication Number | Publication Date |
---|---|
NO910101D0 true NO910101D0 (no) | 1991-01-09 |
NO910101L NO910101L (no) | 1991-07-11 |
Family
ID=23839186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO91910101A NO910101L (no) | 1990-01-10 | 1991-01-09 | Fremgangsmaate og anordning for loddingsformfeste av integrert krets. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5027189A (no) |
EP (1) | EP0436912A1 (no) |
JP (1) | JPH04211137A (no) |
KR (1) | KR940008380B1 (no) |
AU (1) | AU629438B2 (no) |
CA (1) | CA2032266C (no) |
IL (1) | IL96673A (no) |
NO (1) | NO910101L (no) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3181283B2 (ja) * | 1989-08-07 | 2001-07-03 | 株式会社日立製作所 | はんだ接続された電子回路装置とはんだ接続方法並びに金メッキ接続端子用はんだ |
US5202752A (en) * | 1990-05-16 | 1993-04-13 | Nec Corporation | Monolithic integrated circuit device |
JP3031966B2 (ja) * | 1990-07-02 | 2000-04-10 | 株式会社東芝 | 集積回路装置 |
FR2665574B1 (fr) * | 1990-08-03 | 1997-05-30 | Thomson Composants Microondes | Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede. |
US5198695A (en) * | 1990-12-10 | 1993-03-30 | Westinghouse Electric Corp. | Semiconductor wafer with circuits bonded to a substrate |
US5156998A (en) * | 1991-09-30 | 1992-10-20 | Hughes Aircraft Company | Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes |
JPH06209058A (ja) * | 1993-01-12 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法,並びにその実装方法 |
US5635762A (en) * | 1993-05-18 | 1997-06-03 | U.S. Philips Corporation | Flip chip semiconductor device with dual purpose metallized ground conductor |
US5482897A (en) * | 1994-07-19 | 1996-01-09 | Lsi Logic Corporation | Integrated circuit with on-chip ground plane |
DE19606101A1 (de) * | 1996-02-19 | 1997-08-21 | Siemens Ag | Halbleiterkörper mit Lotmaterialschicht |
DE69712562T2 (de) * | 1996-02-28 | 2002-12-19 | Koninklijke Philips Electronics N.V., Eindhoven | Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür |
JP2853692B2 (ja) * | 1997-02-07 | 1999-02-03 | 日本電気株式会社 | 半導体装置 |
JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6297531B2 (en) | 1998-01-05 | 2001-10-02 | International Business Machines Corporation | High performance, low power vertical integrated CMOS devices |
US6137129A (en) * | 1998-01-05 | 2000-10-24 | International Business Machines Corporation | High performance direct coupled FET memory cell |
JP2003045875A (ja) * | 2001-07-30 | 2003-02-14 | Nec Kagobutsu Device Kk | 半導体装置およびその製造方法 |
US7868472B2 (en) * | 2004-04-08 | 2011-01-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thermal dissipation in integrated circuit systems |
US7339267B2 (en) * | 2005-05-26 | 2008-03-04 | Freescale Semiconductor, Inc. | Semiconductor package and method for forming the same |
US7387958B2 (en) * | 2005-07-08 | 2008-06-17 | Raytheon Company | MMIC having back-side multi-layer signal routing |
EP1959502A1 (fr) * | 2007-02-14 | 2008-08-20 | Imphy Alloys | Module photovoltaïque et modules de production d'énergie ou de lumière |
US7639104B1 (en) * | 2007-03-09 | 2009-12-29 | Silicon Clocks, Inc. | Method for temperature compensation in MEMS resonators with isolated regions of distinct material |
US20090026619A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Method for Backside Metallization for Semiconductor Substrate |
JP2010003796A (ja) * | 2008-06-19 | 2010-01-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP5532743B2 (ja) * | 2009-08-20 | 2014-06-25 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2011060807A (ja) * | 2009-09-07 | 2011-03-24 | Renesas Electronics Corp | 導電性接合層付き半導体チップ及びその製造方法、並びに半導体装置の製造方法 |
DE102009044086A1 (de) * | 2009-09-23 | 2011-03-24 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines elektronischen Bauteils und nach diesem Verfahren hergestelltes elektronisches Bauteil |
JP2011096918A (ja) * | 2009-10-30 | 2011-05-12 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
JP5621334B2 (ja) * | 2010-06-10 | 2014-11-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP6173994B2 (ja) * | 2014-10-16 | 2017-08-02 | ウシオオプトセミコンダクター株式会社 | 光半導体装置 |
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US3429040A (en) * | 1965-06-18 | 1969-02-25 | Ibm | Method of joining a component to a substrate |
US3871014A (en) * | 1969-08-14 | 1975-03-11 | Ibm | Flip chip module with non-uniform solder wettable areas on the substrate |
DE2332822B2 (de) * | 1973-06-28 | 1978-04-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium |
US3893156A (en) * | 1973-06-29 | 1975-07-01 | Ibm | Novel beam lead integrated circuit structure and method for making the same including automatic registration of beam leads with corresponding dielectric substrate leads |
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
US4290079A (en) * | 1979-06-29 | 1981-09-15 | International Business Machines Corporation | Improved solder interconnection between a semiconductor device and a supporting substrate |
GB2102833B (en) * | 1981-07-31 | 1984-08-01 | Philips Electronic Associated | Lead-indium-silver alloy for use in semiconductor devices |
JPH0693466B2 (ja) * | 1986-06-04 | 1994-11-16 | 日本電気株式会社 | シリコン半導体装置の製造方法 |
US4827610A (en) * | 1987-08-31 | 1989-05-09 | Texas Instruments Incorporated | Method of creating solder or brazing barriers |
JPH01108730A (ja) * | 1987-10-21 | 1989-04-26 | Nec Corp | 半導体装置 |
JP2703908B2 (ja) * | 1987-11-20 | 1998-01-26 | 日本電気株式会社 | 化合物半導体装置 |
US4840302A (en) * | 1988-04-15 | 1989-06-20 | International Business Machines Corporation | Chromium-titanium alloy |
-
1990
- 1990-01-10 US US07/463,186 patent/US5027189A/en not_active Expired - Fee Related
- 1990-12-14 CA CA 2032266 patent/CA2032266C/en not_active Expired - Fee Related
- 1990-12-14 IL IL9667390A patent/IL96673A/xx not_active IP Right Cessation
- 1990-12-18 AU AU68199/90A patent/AU629438B2/en not_active Ceased
- 1990-12-21 EP EP19900125194 patent/EP0436912A1/en not_active Ceased
-
1991
- 1991-01-09 NO NO91910101A patent/NO910101L/no unknown
- 1991-01-09 KR KR1019910000227A patent/KR940008380B1/ko not_active IP Right Cessation
- 1991-01-10 JP JP3001474A patent/JPH04211137A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR940008380B1 (ko) | 1994-09-12 |
AU6819990A (en) | 1991-07-11 |
IL96673A0 (en) | 1991-09-16 |
US5027189A (en) | 1991-06-25 |
IL96673A (en) | 1993-03-15 |
CA2032266C (en) | 1993-04-06 |
EP0436912A1 (en) | 1991-07-17 |
NO910101L (no) | 1991-07-11 |
KR910014996A (ko) | 1991-08-31 |
AU629438B2 (en) | 1992-10-01 |
CA2032266A1 (en) | 1993-04-06 |
JPH04211137A (ja) | 1992-08-03 |
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