NO910101D0 - Fremgangsmaate og anordning for loddingsformfeste av integrert krets. - Google Patents

Fremgangsmaate og anordning for loddingsformfeste av integrert krets.

Info

Publication number
NO910101D0
NO910101D0 NO910101A NO910101A NO910101D0 NO 910101 D0 NO910101 D0 NO 910101D0 NO 910101 A NO910101 A NO 910101A NO 910101 A NO910101 A NO 910101A NO 910101 D0 NO910101 D0 NO 910101D0
Authority
NO
Norway
Prior art keywords
procedure
integrated circuit
solar
solar form
integrated
Prior art date
Application number
NO910101A
Other languages
English (en)
Other versions
NO910101L (no
Inventor
Michael J Shannon
Randolf C Turnidge
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO910101D0 publication Critical patent/NO910101D0/no
Publication of NO910101L publication Critical patent/NO910101L/no

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    • H—ELECTRICITY
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    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Photovoltaic Devices (AREA)
NO91910101A 1990-01-10 1991-01-09 Fremgangsmaate og anordning for loddingsformfeste av integrert krets. NO910101L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/463,186 US5027189A (en) 1990-01-10 1990-01-10 Integrated circuit solder die-attach design and method

Publications (2)

Publication Number Publication Date
NO910101D0 true NO910101D0 (no) 1991-01-09
NO910101L NO910101L (no) 1991-07-11

Family

ID=23839186

Family Applications (1)

Application Number Title Priority Date Filing Date
NO91910101A NO910101L (no) 1990-01-10 1991-01-09 Fremgangsmaate og anordning for loddingsformfeste av integrert krets.

Country Status (8)

Country Link
US (1) US5027189A (no)
EP (1) EP0436912A1 (no)
JP (1) JPH04211137A (no)
KR (1) KR940008380B1 (no)
AU (1) AU629438B2 (no)
CA (1) CA2032266C (no)
IL (1) IL96673A (no)
NO (1) NO910101L (no)

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US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
FR2665574B1 (fr) * 1990-08-03 1997-05-30 Thomson Composants Microondes Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede.
US5198695A (en) * 1990-12-10 1993-03-30 Westinghouse Electric Corp. Semiconductor wafer with circuits bonded to a substrate
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JPH06209058A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 半導体装置及びその製造方法，並びにその実装方法
US5635762A (en) * 1993-05-18 1997-06-03 U.S. Philips Corporation Flip chip semiconductor device with dual purpose metallized ground conductor
US5482897A (en) * 1994-07-19 1996-01-09 Lsi Logic Corporation Integrated circuit with on-chip ground plane
DE19606101A1 (de) * 1996-02-19 1997-08-21 Siemens Ag Halbleiterkörper mit Lotmaterialschicht
DE69712562T2 (de) * 1996-02-28 2002-12-19 Koninklijke Philips Electronics N.V., Eindhoven Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür
JP2853692B2 (ja) * 1997-02-07 1999-02-03 日本電気株式会社 半導体装置
JP3724110B2 (ja) * 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
US6297531B2 (en) 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6137129A (en) * 1998-01-05 2000-10-24 International Business Machines Corporation High performance direct coupled FET memory cell
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KR940008380B1 (ko) 1994-09-12
AU6819990A (en) 1991-07-11
IL96673A0 (en) 1991-09-16
US5027189A (en) 1991-06-25
IL96673A (en) 1993-03-15
CA2032266C (en) 1993-04-06
EP0436912A1 (en) 1991-07-17
NO910101L (no) 1991-07-11
KR910014996A (ko) 1991-08-31
AU629438B2 (en) 1992-10-01
CA2032266A1 (en) 1993-04-06
JPH04211137A (ja) 1992-08-03

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