NO322202B1 - Fremgangsmate i fremstillingen av en elektronisk innretning - Google Patents
Fremgangsmate i fremstillingen av en elektronisk innretning Download PDFInfo
- Publication number
- NO322202B1 NO322202B1 NO20045727A NO20045727A NO322202B1 NO 322202 B1 NO322202 B1 NO 322202B1 NO 20045727 A NO20045727 A NO 20045727A NO 20045727 A NO20045727 A NO 20045727A NO 322202 B1 NO322202 B1 NO 322202B1
- Authority
- NO
- Norway
- Prior art keywords
- procedure according
- layer
- printing
- protective layer
- layers
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
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- 238000007639 printing Methods 0.000 claims abstract description 39
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- 239000002904 solvent Substances 0.000 claims abstract description 12
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 230000035699 permeability Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 49
- 229920000642 polymer Polymers 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 18
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- 238000000151 deposition Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
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- -1 poly(vinylphosphonic acid) Polymers 0.000 claims description 12
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 10
- 239000002322 conducting polymer Substances 0.000 claims description 6
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 5
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- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 2
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- 238000004090 dissolution Methods 0.000 claims description 2
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- 241001479434 Agfa Species 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910019093 NaOCl Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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- 238000005240 physical vapour deposition Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
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- 229920001897 terpolymer Polymers 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
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- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20045727A NO322202B1 (no) | 2004-12-30 | 2004-12-30 | Fremgangsmate i fremstillingen av en elektronisk innretning |
| JP2007549297A JP2008527690A (ja) | 2004-12-30 | 2005-12-23 | メモリ・デバイス製造方法 |
| KR1020077015819A KR100891391B1 (ko) | 2004-12-30 | 2005-12-23 | 메모리 장치의 제조 방법 |
| PCT/NO2005/000481 WO2006071122A1 (en) | 2004-12-30 | 2005-12-23 | A method in the fabrication of a memory device |
| CN200580048829A CN100585731C (zh) | 2004-12-30 | 2005-12-23 | 存储器件制造中的方法 |
| EP05821538A EP1831893A1 (en) | 2004-12-30 | 2005-12-23 | A method in the fabrication of a memory device |
| US11/319,383 US20060160251A1 (en) | 2004-12-30 | 2005-12-29 | Method in the fabrication of a memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20045727A NO322202B1 (no) | 2004-12-30 | 2004-12-30 | Fremgangsmate i fremstillingen av en elektronisk innretning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20045727D0 NO20045727D0 (no) | 2004-12-30 |
| NO322202B1 true NO322202B1 (no) | 2006-08-28 |
Family
ID=35209732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20045727A NO322202B1 (no) | 2004-12-30 | 2004-12-30 | Fremgangsmate i fremstillingen av en elektronisk innretning |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060160251A1 (zh) |
| EP (1) | EP1831893A1 (zh) |
| JP (1) | JP2008527690A (zh) |
| KR (1) | KR100891391B1 (zh) |
| CN (1) | CN100585731C (zh) |
| NO (1) | NO322202B1 (zh) |
| WO (1) | WO2006071122A1 (zh) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG135079A1 (en) * | 2006-03-02 | 2007-09-28 | Sony Corp | Memory device which comprises a multi-layer capacitor |
| EP2016591A1 (en) * | 2006-04-28 | 2009-01-21 | Agfa-Gevaert | Conventionally printable non-volatile passive memory element and method of making thereof. |
| US8137767B2 (en) | 2006-11-22 | 2012-03-20 | Fujifilm Corporation | Antireflective film, polarizing plate and image display device |
| US8110450B2 (en) * | 2007-12-19 | 2012-02-07 | Palo Alto Research Center Incorporated | Printed TFT and TFT array with self-aligned gate |
| US20090167496A1 (en) * | 2007-12-31 | 2009-07-02 | Unity Semiconductor Corporation | Radio frequency identification transponder memory |
| US7573063B1 (en) * | 2008-05-15 | 2009-08-11 | Xerox Corporation | Organic thin film transistors |
| WO2013000825A1 (en) | 2011-06-27 | 2013-01-03 | Thin Film Electronics Asa | Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate |
| EP2724342B1 (en) | 2011-06-27 | 2018-10-17 | Xerox Corporation | Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate |
| CN104205250A (zh) * | 2012-03-30 | 2014-12-10 | 阿尔卑斯电气株式会社 | 导电图案形成基板的制造方法 |
| KR101382890B1 (ko) * | 2012-06-21 | 2014-04-08 | 청주대학교 산학협력단 | 나노 박막을 이용한 전기 광학 변조기 및 그 제조방법 |
| CN104409632B (zh) * | 2014-05-31 | 2017-05-10 | 福州大学 | 一种多层结构有机阻变存储器的3d打印制备方法 |
| CN106575575B (zh) * | 2014-06-09 | 2018-12-28 | 沙特基础全球技术有限公司 | 使用脉冲电磁辐射来处理薄膜有机铁电材料 |
| CN104810361B (zh) * | 2015-04-30 | 2019-01-29 | 于翔 | 一种存储器 |
| EP3226271B1 (en) * | 2016-04-01 | 2021-03-17 | RISE Research Institutes of Sweden AB | Electrochemical device |
| US10636471B2 (en) | 2016-04-20 | 2020-04-28 | Micron Technology, Inc. | Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays |
| CN105742501B (zh) * | 2016-05-03 | 2018-07-06 | 苏州大学 | 基于经膦酸或三氯硅烷修饰的ito玻璃基底的有机电存储器件及其制备方法 |
| US10832775B1 (en) | 2019-07-18 | 2020-11-10 | International Business Machines Corporation | Cross-point array of polymer junctions with individually-programmed conductances that can be reset |
| CN111180582B (zh) * | 2020-02-12 | 2021-12-21 | 福州大学 | 一种基于驻极体的突触晶体管及其制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1022470A (ja) * | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
| NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
| US6541309B2 (en) * | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
| KR100424090B1 (ko) * | 2001-06-25 | 2004-03-22 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자용 정공 수송층, 그 정공 수송층을사용한유기 전계 발광 소자 및 그 소자의 제조 방법 |
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| NO20015735D0 (no) * | 2001-11-23 | 2001-11-23 | Thin Film Electronics Asa | Barrierelag |
| US6828685B2 (en) * | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
| US7026079B2 (en) * | 2002-08-22 | 2006-04-11 | Agfa Gevaert | Process for preparing a substantially transparent conductive layer configuration |
| US7179534B2 (en) * | 2003-01-31 | 2007-02-20 | Princeton University | Conductive-polymer electronic switch |
| US6656763B1 (en) * | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
| US20050006640A1 (en) * | 2003-06-26 | 2005-01-13 | Jackson Warren B. | Polymer-based memory element |
| NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
-
2004
- 2004-12-30 NO NO20045727A patent/NO322202B1/no unknown
-
2005
- 2005-12-23 CN CN200580048829A patent/CN100585731C/zh not_active Expired - Fee Related
- 2005-12-23 EP EP05821538A patent/EP1831893A1/en not_active Withdrawn
- 2005-12-23 KR KR1020077015819A patent/KR100891391B1/ko not_active IP Right Cessation
- 2005-12-23 WO PCT/NO2005/000481 patent/WO2006071122A1/en active Application Filing
- 2005-12-23 JP JP2007549297A patent/JP2008527690A/ja active Pending
- 2005-12-29 US US11/319,383 patent/US20060160251A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1831893A1 (en) | 2007-09-12 |
| KR100891391B1 (ko) | 2009-04-02 |
| CN101133460A (zh) | 2008-02-27 |
| WO2006071122A1 (en) | 2006-07-06 |
| US20060160251A1 (en) | 2006-07-20 |
| JP2008527690A (ja) | 2008-07-24 |
| KR20070087022A (ko) | 2007-08-27 |
| CN100585731C (zh) | 2010-01-27 |
| NO20045727D0 (no) | 2004-12-30 |
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