NO312699B1 - Adressering av minnematrise - Google Patents
Adressering av minnematrise Download PDFInfo
- Publication number
- NO312699B1 NO312699B1 NO20003508A NO20003508A NO312699B1 NO 312699 B1 NO312699 B1 NO 312699B1 NO 20003508 A NO20003508 A NO 20003508A NO 20003508 A NO20003508 A NO 20003508A NO 312699 B1 NO312699 B1 NO 312699B1
- Authority
- NO
- Norway
- Prior art keywords
- voltage
- cells
- word
- bit lines
- addressed
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 38
- 239000011159 matrix material Substances 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 49
- 230000010287 polarization Effects 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 3
- 230000000284 resting effect Effects 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 14
- 230000000977 initiatory effect Effects 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 description 21
- 230000036961 partial effect Effects 0.000 description 17
- 238000003491 array Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 5
- 238000013500 data storage Methods 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/06—Passive matrix structure, i.e. with direct application of both column and row voltages to the light emitting or modulating elements, other than LCD or OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3622—Control of matrices with row and column drivers using a passive matrix
- G09G3/3629—Control of matrices with row and column drivers using a passive matrix using liquid crystals having memory effects, e.g. ferroelectric liquid crystals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (18)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20003508A NO312699B1 (no) | 2000-07-07 | 2000-07-07 | Adressering av minnematrise |
| JP2002508805A JP4472921B2 (ja) | 2000-07-07 | 2001-07-06 | メモリマトリックスのアドレス指定 |
| PCT/NO2001/000289 WO2002005287A1 (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| ES01975041T ES2232666T3 (es) | 2000-07-07 | 2001-07-06 | Direccionamiento de una matriz de memoria. |
| DE60108636T DE60108636T2 (de) | 2000-07-07 | 2001-07-06 | Adressierung einer speichermatrix |
| CNB018124666A CN1265394C (zh) | 2000-07-07 | 2001-07-06 | 存储器矩阵的寻址方法 |
| US09/899,096 US20020024835A1 (en) | 2000-07-07 | 2001-07-06 | Non-volatile passive matrix device and method for readout of the same |
| CA002412169A CA2412169C (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| AU2001294410A AU2001294410B2 (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| KR10-2003-7000191A KR100484580B1 (ko) | 2000-07-07 | 2001-07-06 | 메모리 매트릭스의 어드레싱 |
| AU9441001A AU9441001A (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| AT01975041T ATE288124T1 (de) | 2000-07-07 | 2001-07-06 | Adressierung einer speichermatrix |
| US09/899,093 US6804138B2 (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| RU2003103443/09A RU2239889C1 (ru) | 2000-07-07 | 2001-07-06 | Адресация матричной памяти |
| EP01975041A EP1299885B1 (en) | 2000-07-07 | 2001-07-06 | Addressing of memory matrix |
| HK04100107A HK1057287A1 (en) | 2000-07-07 | 2004-01-07 | Method for addressing of memory matrix |
| US10/934,573 US6950330B2 (en) | 2000-07-07 | 2004-09-07 | Addressing of memory matrix |
| JP2006287634A JP2007087579A (ja) | 2000-07-07 | 2006-10-23 | メモリマトリックスのアドレス指定 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20003508A NO312699B1 (no) | 2000-07-07 | 2000-07-07 | Adressering av minnematrise |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20003508D0 NO20003508D0 (no) | 2000-07-07 |
| NO20003508L NO20003508L (no) | 2002-01-08 |
| NO312699B1 true NO312699B1 (no) | 2002-06-17 |
Family
ID=19911359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20003508A NO312699B1 (no) | 2000-07-07 | 2000-07-07 | Adressering av minnematrise |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US6804138B2 (ko) |
| EP (1) | EP1299885B1 (ko) |
| JP (2) | JP4472921B2 (ko) |
| KR (1) | KR100484580B1 (ko) |
| CN (1) | CN1265394C (ko) |
| AT (1) | ATE288124T1 (ko) |
| AU (2) | AU9441001A (ko) |
| CA (1) | CA2412169C (ko) |
| DE (1) | DE60108636T2 (ko) |
| ES (1) | ES2232666T3 (ko) |
| HK (1) | HK1057287A1 (ko) |
| NO (1) | NO312699B1 (ko) |
| RU (1) | RU2239889C1 (ko) |
| WO (1) | WO2002005287A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6937500B2 (en) | 2002-09-11 | 2005-08-30 | Thin Film Electronics Asa | Method for operating a ferroelectric of electret memory device, and a device of this kind |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| NO20015879A (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utførelse av fremgangsmåten |
| US6646904B2 (en) * | 2001-12-21 | 2003-11-11 | Intel Corporation | Ferroelectric memory and method of reading the same |
| NO20021057A (no) | 2002-03-01 | 2003-08-25 | Thin Film Electronics Asa | Minnecelle |
| JP4214708B2 (ja) * | 2002-03-27 | 2009-01-28 | セイコーエプソン株式会社 | 強誘電体記憶装置及びその駆動方法 |
| GB2390201A (en) * | 2002-06-27 | 2003-12-31 | Seiko Epson Corp | Charge integrating sense amplifier |
| US6920060B2 (en) * | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
| JP2005032401A (ja) * | 2003-06-17 | 2005-02-03 | Sharp Corp | 不揮発性半導体記憶装置及びその書き込み方法と消去方法 |
| US7236394B2 (en) * | 2003-06-18 | 2007-06-26 | Macronix International Co., Ltd. | Transistor-free random access memory |
| NO324607B1 (no) * | 2003-11-24 | 2007-11-26 | Thin Film Electronics Asa | Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering |
| NO320149B1 (no) * | 2004-02-13 | 2005-10-31 | Thin Film Electronics Asa | Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning |
| US7133304B2 (en) * | 2004-03-22 | 2006-11-07 | Texas Instruments Incorporated | Method and apparatus to reduce storage node disturbance in ferroelectric memory |
| NO322040B1 (no) | 2004-04-15 | 2006-08-07 | Thin Film Electronics Asa | Bimodal drift av ferroelektriske og elektrete minneceller og innretninger |
| CN1969338B (zh) * | 2004-06-23 | 2012-03-21 | 帕特兰尼拉财富有限公司 | 存储器 |
| NO324029B1 (no) * | 2004-09-23 | 2007-07-30 | Thin Film Electronics Asa | Lesemetode og deteksjonsanordning |
| JP2008527584A (ja) * | 2005-01-04 | 2008-07-24 | シン フイルム エレクトロニクス エイエスエイ | 受動マトリクス・アドレッシング方式の強誘電体又はエレクトレット・メモリ・デバイスの動作方法 |
| US7215565B2 (en) | 2005-01-04 | 2007-05-08 | Thin Film Electronics Asa | Method for operating a passive matrix-addressable ferroelectric or electret memory device |
| US7706165B2 (en) * | 2005-12-20 | 2010-04-27 | Agfa-Gevaert Nv | Ferroelectric passive memory cell, device and method of manufacture thereof |
| JP4718354B2 (ja) * | 2006-03-27 | 2011-07-06 | パトレネラ キャピタル リミテッド， エルエルシー | メモリ |
| US20080037324A1 (en) * | 2006-08-14 | 2008-02-14 | Geoffrey Wen-Tai Shuy | Electrical thin film memory |
| EP1944763A1 (en) | 2007-01-12 | 2008-07-16 | STMicroelectronics S.r.l. | Reading circuit and method for data storage system |
| US7813158B2 (en) * | 2007-05-14 | 2010-10-12 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Recordable electrical memory |
| US7679967B2 (en) * | 2007-12-21 | 2010-03-16 | Spansion Llc | Controlling AC disturbance while programming |
| WO2009102918A1 (en) * | 2008-02-13 | 2009-08-20 | Hong Kong Applied Science & Technology Research Institute Co. Ltd | Recordable memory cell with multiple physical states |
| US7791976B2 (en) * | 2008-04-24 | 2010-09-07 | Qualcomm Incorporated | Systems and methods for dynamic power savings in electronic memory operation |
| JP2008276935A (ja) * | 2008-06-27 | 2008-11-13 | Seiko Epson Corp | 強誘電体記憶装置、その駆動方法及び駆動回路 |
| JP2011022497A (ja) * | 2009-07-17 | 2011-02-03 | Seiko Epson Corp | 電気光学装置、電子機器、及び電気光学装置の駆動方法 |
| US9224465B2 (en) * | 2014-03-21 | 2015-12-29 | Intel Corporation | Cross-point memory bias scheme |
| US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
| US9613676B1 (en) * | 2016-06-29 | 2017-04-04 | Micron Technology, Inc. | Writing to cross-point non-volatile memory |
| US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
| US10762944B2 (en) * | 2017-12-18 | 2020-09-01 | Micron Technology, Inc. | Single plate configuration and memory array operation |
| US10529410B2 (en) | 2017-12-18 | 2020-01-07 | Micron Technology, Inc. | Techniques for accessing an array of memory cells to reduce parasitic coupling |
| US10504576B2 (en) | 2017-12-19 | 2019-12-10 | Micron Technology, Inc. | Current separation for memory sensing |
| US10446232B2 (en) | 2017-12-19 | 2019-10-15 | Micron Technology, Inc. | Charge separation for memory sensing |
| US10497521B1 (en) | 2018-10-29 | 2019-12-03 | Xerox Corporation | Roller electric contact |
| CN110428857B (zh) * | 2019-07-09 | 2021-09-24 | 清华大学 | 一种基于滞回特性器件的存储器 |
| US11017831B2 (en) | 2019-07-15 | 2021-05-25 | Micron Technology, Inc. | Ferroelectric memory cell access |
| US11348635B2 (en) * | 2020-03-30 | 2022-05-31 | Micron Technology, Inc. | Memory cell biasing techniques during a read operation |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2972734A (en) * | 1955-06-23 | 1961-02-21 | Bell Telephone Labor Inc | Electrical circuits employing ferroelectric condensers |
| US3002182A (en) * | 1956-12-10 | 1961-09-26 | Bell Telephone Labor Inc | Ferroelectric storage circuits and methods |
| US4169258A (en) * | 1976-04-19 | 1979-09-25 | Rockwell International Corporation | One-third selection scheme for addressing a ferroelectric matrix arrangement |
| US4709995A (en) * | 1984-08-18 | 1987-12-01 | Canon Kabushiki Kaisha | Ferroelectric display panel and driving method therefor to achieve gray scale |
| FR2621757A1 (fr) * | 1987-10-09 | 1989-04-14 | Thomson Csf | Reseau neuronal programmable a polymere ferroelectrique |
| JPH0677434A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 半導体記憶装置 |
| JPH0991970A (ja) * | 1995-09-26 | 1997-04-04 | Olympus Optical Co Ltd | 非破壊型強誘電体メモリ及びその駆動方法 |
| JPH09128960A (ja) * | 1995-11-01 | 1997-05-16 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
-
2000
- 2000-07-07 NO NO20003508A patent/NO312699B1/no unknown
-
2001
- 2001-07-06 DE DE60108636T patent/DE60108636T2/de not_active Expired - Lifetime
- 2001-07-06 ES ES01975041T patent/ES2232666T3/es not_active Expired - Lifetime
- 2001-07-06 CN CNB018124666A patent/CN1265394C/zh not_active Expired - Lifetime
- 2001-07-06 EP EP01975041A patent/EP1299885B1/en not_active Expired - Lifetime
- 2001-07-06 KR KR10-2003-7000191A patent/KR100484580B1/ko not_active IP Right Cessation
- 2001-07-06 RU RU2003103443/09A patent/RU2239889C1/ru not_active IP Right Cessation
- 2001-07-06 WO PCT/NO2001/000289 patent/WO2002005287A1/en active IP Right Grant
- 2001-07-06 US US09/899,093 patent/US6804138B2/en not_active Expired - Lifetime
- 2001-07-06 JP JP2002508805A patent/JP4472921B2/ja not_active Expired - Fee Related
- 2001-07-06 CA CA002412169A patent/CA2412169C/en not_active Expired - Fee Related
- 2001-07-06 AU AU9441001A patent/AU9441001A/xx active Pending
- 2001-07-06 AT AT01975041T patent/ATE288124T1/de not_active IP Right Cessation
- 2001-07-06 AU AU2001294410A patent/AU2001294410B2/en not_active Ceased
-
2004
- 2004-01-07 HK HK04100107A patent/HK1057287A1/xx not_active IP Right Cessation
- 2004-09-07 US US10/934,573 patent/US6950330B2/en not_active Expired - Lifetime
-
2006
- 2006-10-23 JP JP2006287634A patent/JP2007087579A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6937500B2 (en) | 2002-09-11 | 2005-08-30 | Thin Film Electronics Asa | Method for operating a ferroelectric of electret memory device, and a device of this kind |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030041955A (ko) | 2003-05-27 |
| DE60108636D1 (de) | 2005-03-03 |
| AU9441001A (en) | 2002-01-21 |
| WO2002005287A1 (en) | 2002-01-17 |
| DE60108636T2 (de) | 2005-06-23 |
| US6804138B2 (en) | 2004-10-12 |
| CN1265394C (zh) | 2006-07-19 |
| ES2232666T3 (es) | 2005-06-01 |
| CA2412169C (en) | 2005-12-27 |
| CA2412169A1 (en) | 2002-01-17 |
| US6950330B2 (en) | 2005-09-27 |
| NO20003508D0 (no) | 2000-07-07 |
| EP1299885A1 (en) | 2003-04-09 |
| NO20003508L (no) | 2002-01-08 |
| US20020060923A1 (en) | 2002-05-23 |
| US20050058010A1 (en) | 2005-03-17 |
| HK1057287A1 (en) | 2004-03-19 |
| RU2239889C1 (ru) | 2004-11-10 |
| JP2007087579A (ja) | 2007-04-05 |
| JP2004503051A (ja) | 2004-01-29 |
| EP1299885B1 (en) | 2005-01-26 |
| JP4472921B2 (ja) | 2010-06-02 |
| KR100484580B1 (ko) | 2005-04-22 |
| CN1440553A (zh) | 2003-09-03 |
| AU2001294410B2 (en) | 2006-01-05 |
| ATE288124T1 (de) | 2005-02-15 |
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