NO20060576L - Abrasive partikler for kjemisk mekanisk polering - Google Patents

Abrasive partikler for kjemisk mekanisk polering

Info

Publication number
NO20060576L
NO20060576L NO20060576A NO20060576A NO20060576L NO 20060576 L NO20060576 L NO 20060576L NO 20060576 A NO20060576 A NO 20060576A NO 20060576 A NO20060576 A NO 20060576A NO 20060576 L NO20060576 L NO 20060576L
Authority
NO
Norway
Prior art keywords
abrasive particles
nanometers
mechanical polishing
chemical mechanical
volume
Prior art date
Application number
NO20060576A
Other languages
English (en)
Norwegian (no)
Inventor
Jia-Ni Chu
James Neil Pryor
Original Assignee
Grace W R & Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34079279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO20060576(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Grace W R & Co filed Critical Grace W R & Co
Publication of NO20060576L publication Critical patent/NO20060576L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
NO20060576A 2003-07-11 2006-02-03 Abrasive partikler for kjemisk mekanisk polering NO20060576L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48668603P 2003-07-11 2003-07-11
PCT/US2004/021998 WO2005007770A1 (en) 2003-07-11 2004-07-09 Abrasive particles for chemical mechanical polishing

Publications (1)

Publication Number Publication Date
NO20060576L true NO20060576L (no) 2006-02-03

Family

ID=34079279

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20060576A NO20060576L (no) 2003-07-11 2006-02-03 Abrasive partikler for kjemisk mekanisk polering

Country Status (17)

Country Link
US (1) US20060175295A1 (ko)
EP (1) EP1660606B1 (ko)
JP (1) JP2007531631A (ko)
KR (1) KR101134827B1 (ko)
CN (1) CN1849379B (ko)
AU (1) AU2004257233A1 (ko)
BR (1) BRPI0412515A (ko)
CA (1) CA2532114A1 (ko)
DK (1) DK1660606T3 (ko)
ES (1) ES2436215T3 (ko)
MX (1) MXPA06000251A (ko)
NO (1) NO20060576L (ko)
PL (1) PL1660606T3 (ko)
PT (1) PT1660606E (ko)
RU (1) RU2356926C2 (ko)
TW (1) TWI415926B (ko)
WO (1) WO2005007770A1 (ko)

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GB2433515B (en) * 2005-12-22 2011-05-04 Kao Corp Polishing composition for hard disk substrate
US20130000214A1 (en) * 2006-01-11 2013-01-03 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
JP2007220995A (ja) * 2006-02-17 2007-08-30 Fujifilm Corp 金属用研磨液
US7897061B2 (en) 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
WO2008008282A1 (en) * 2006-07-12 2008-01-17 Cabot Microelectronics Corporation Cmp method for metal-containing substrates
JP5007384B2 (ja) * 2006-10-18 2012-08-22 株式会社荏原製作所 触媒支援型化学加工方法及び装置
US20080085412A1 (en) * 2006-10-04 2008-04-10 Ortiz C Yolanda Silica-coated metal oxide sols having variable metal oxide to silica ratio
JP4665886B2 (ja) * 2006-10-27 2011-04-06 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体、垂直磁気記録媒体用基板、および、それらの製造方法
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
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JP5270303B2 (ja) * 2008-10-31 2013-08-21 日揮触媒化成株式会社 研磨用シリカゾルおよびその製造方法
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US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
US20120319033A1 (en) * 2010-02-15 2012-12-20 Mitsubishi Gas Chemical Company, Inc. Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein
JP5617387B2 (ja) * 2010-07-06 2014-11-05 富士電機株式会社 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板
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KR101906135B1 (ko) * 2010-09-08 2018-10-10 바스프 에스이 수성 연마 조성물 및 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마 방법
CN103097476B (zh) * 2010-09-08 2016-02-17 巴斯夫欧洲公司 化学机械抛光用于电子、机械和光学器件的衬底的含水抛光组合物和方法
JPWO2012036087A1 (ja) * 2010-09-15 2014-02-03 旭硝子株式会社 研磨剤および研磨方法
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
TWI605112B (zh) * 2011-02-21 2017-11-11 Fujimi Inc 研磨用組成物
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
EP2742103B1 (en) 2011-08-01 2016-09-21 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-xGex MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
CN102344761A (zh) * 2011-08-03 2012-02-08 南通海迅天恒纳米科技有限公司 一种铈掺杂二氧化硅溶胶的制备方法
KR102050783B1 (ko) * 2011-11-25 2019-12-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6077208B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
CN103975001B (zh) * 2011-12-21 2017-09-01 巴斯夫欧洲公司 制备cmp组合物的方法及其应用
AU2013207946B2 (en) * 2012-01-10 2016-07-07 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having complex shapes and methods of forming same
EP2969391B1 (en) 2013-03-15 2018-04-25 Ecolab USA Inc. Methods of polishing sapphire surfaces
JP2013177617A (ja) * 2013-05-09 2013-09-09 Jgc Catalysts & Chemicals Ltd 研磨用シリカゾルおよび研磨用組成物
EP2810997A1 (en) * 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP6407582B2 (ja) * 2013-07-03 2018-10-17 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置
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JP6665852B2 (ja) * 2015-02-26 2020-03-13 堺化学工業株式会社 負帯電性基板の研磨方法、及び、高表面平滑性の負帯電性基板の製造方法
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CN105463467A (zh) * 2015-11-30 2016-04-06 江苏中晶科技有限公司 高精密弱碱性不锈钢抛光液及其制备方法
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Also Published As

Publication number Publication date
TWI415926B (zh) 2013-11-21
CN1849379A (zh) 2006-10-18
US20060175295A1 (en) 2006-08-10
KR20060041220A (ko) 2006-05-11
CA2532114A1 (en) 2005-01-27
CN1849379B (zh) 2011-12-14
PT1660606E (pt) 2013-12-09
ES2436215T3 (es) 2013-12-27
KR101134827B1 (ko) 2012-04-13
EP1660606B1 (en) 2013-09-04
DK1660606T3 (da) 2013-12-02
JP2007531631A (ja) 2007-11-08
RU2006104117A (ru) 2006-07-27
WO2005007770A1 (en) 2005-01-27
RU2356926C2 (ru) 2009-05-27
PL1660606T3 (pl) 2014-02-28
MXPA06000251A (es) 2006-03-30
EP1660606A1 (en) 2006-05-31
TW200516132A (en) 2005-05-16
BRPI0412515A (pt) 2006-09-19
AU2004257233A1 (en) 2005-01-27

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