NO20045319L - Anordning for fremstilling av krystallstaver med definert tverrsnitt og polykrystallinsk struktur ved hjelp av digelfri kontinuerlig krystallisasjon - Google Patents

Anordning for fremstilling av krystallstaver med definert tverrsnitt og polykrystallinsk struktur ved hjelp av digelfri kontinuerlig krystallisasjon

Info

Publication number
NO20045319L
NO20045319L NO20045319A NO20045319A NO20045319L NO 20045319 L NO20045319 L NO 20045319L NO 20045319 A NO20045319 A NO 20045319A NO 20045319 A NO20045319 A NO 20045319A NO 20045319 L NO20045319 L NO 20045319L
Authority
NO
Norway
Prior art keywords
crucible
crystallization
polycrystalline structure
section
crystal rods
Prior art date
Application number
NO20045319A
Other languages
English (en)
Inventor
Nicolai V Abrosimov
Helge Riemann
Original Assignee
Pv Silicon Forschungs Und Prod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pv Silicon Forschungs Und Prod filed Critical Pv Silicon Forschungs Und Prod
Publication of NO20045319L publication Critical patent/NO20045319L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Abstract

En anordning for fremstilling av krystallstaver med definert tverrsnitt og søyleformet polykrystallinsk struktur ved hjelp av digelfri kontinuerlig krystallisasjon, med minst én digel fylt med krystallmateriale med en sentral bortledning for transport av digelinnholdet til en voksende krystallstav anordnet under digelen, idet den sentrale bortledning er innført i smeltemenisken på den øvre endeflate av krystallstaven, hvor det er anordnet midler for uavbrutt regulerbar mating av digelen med fast krystallmateriale og midler for samtidig tilførsel av smelteenergien og innstilling av krystallisasjonsfronten. For fremstilling av krystallstaver med definert tverrsnitt og søyleformet polykrystallinsk struktur ved bruk av teknisk mindre kostbare varmemidler ved høye krystallisasjonsrater og stabile fasegrenser er midlene for samtidig tilførsel av smelteenergi og innstilling av krystallisasjonsfronten mot en voksende krystallstav (8) forsynt med en flat induksjonsspole (5) med en åpning, idet induksjonsspolen (5) i dens avstand til digelen (4) og/eller til krystallisasjonsfronten er anordnet vertikalt bevegelig.
NO20045319A 2002-05-06 2004-12-03 Anordning for fremstilling av krystallstaver med definert tverrsnitt og polykrystallinsk struktur ved hjelp av digelfri kontinuerlig krystallisasjon NO20045319L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10220964A DE10220964B4 (de) 2002-05-06 2002-05-06 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
PCT/DE2003/001515 WO2003093540A1 (de) 2002-05-06 2003-05-06 Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation

Publications (1)

Publication Number Publication Date
NO20045319L true NO20045319L (no) 2004-12-03

Family

ID=29285284

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20045319A NO20045319L (no) 2002-05-06 2004-12-03 Anordning for fremstilling av krystallstaver med definert tverrsnitt og polykrystallinsk struktur ved hjelp av digelfri kontinuerlig krystallisasjon

Country Status (10)

Country Link
US (1) US7326297B2 (no)
EP (1) EP1509642B1 (no)
JP (1) JP4555677B2 (no)
AT (1) ATE367462T1 (no)
AU (1) AU2003229290A1 (no)
DE (2) DE10220964B4 (no)
DK (1) DK1509642T3 (no)
ES (1) ES2290458T3 (no)
NO (1) NO20045319L (no)
WO (1) WO2003093540A1 (no)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005016776B4 (de) * 2005-04-06 2009-06-18 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd polygonalem Querschnitt
JP5073257B2 (ja) * 2006-09-27 2012-11-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置及び方法
US9422636B2 (en) * 2009-11-24 2016-08-23 Forschungsverbund Berlin E.V. Method and apparatus for producing single crystals composed of semiconductor material
DE102012213506A1 (de) * 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102012215677B3 (de) * 2012-09-04 2013-10-10 Siltronic Ag Verfahren zum Herstellen eines Einkristalls aus Silizium
JP2014062044A (ja) * 2013-12-11 2014-04-10 National Institute For Materials Science 四角形の単結晶シリコンウェ−ハ
DE102014207149A1 (de) 2014-04-14 2015-10-29 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102014210936B3 (de) * 2014-06-06 2015-10-22 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
DE102014226419A1 (de) 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
CN114941171B (zh) * 2022-05-25 2023-03-24 宇泽半导体(云南)有限公司 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法
CN116288650B (zh) * 2023-05-24 2023-08-29 苏州晨晖智能设备有限公司 以颗粒硅为原料的硅单晶生长装置和生长方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
US5454424A (en) * 1991-12-18 1995-10-03 Nobuyuki Mori Method of and apparatus for casting crystalline silicon ingot by electron bean melting
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
JP2833478B2 (ja) * 1994-05-18 1998-12-09 信越半導体株式会社 シリコン単結晶成長方法
JPH08333188A (ja) * 1995-04-06 1996-12-17 Komatsu Electron Metals Co Ltd Ｆｚ法による半導体単結晶製造装置
DE19538020A1 (de) * 1995-10-12 1997-04-17 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
DE19610650B4 (de) * 1996-03-06 2004-03-18 Forschungsverbund Berlin E.V. Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben
JP3759807B2 (ja) * 1997-03-12 2006-03-29 日本碍子株式会社 酸化物単結晶体の製造方法およびその装置

Also Published As

Publication number Publication date
AU2003229290A1 (en) 2003-11-17
DK1509642T3 (da) 2007-11-05
WO2003093540A1 (de) 2003-11-13
EP1509642B1 (de) 2007-07-18
JP4555677B2 (ja) 2010-10-06
DE10220964A1 (de) 2003-11-27
EP1509642A1 (de) 2005-03-02
ES2290458T3 (es) 2008-02-16
US20050188918A1 (en) 2005-09-01
ATE367462T1 (de) 2007-08-15
DE10220964B4 (de) 2006-11-02
US7326297B2 (en) 2008-02-05
DE50307712D1 (de) 2007-08-30
DE10220964A8 (de) 2004-07-08
JP2005529046A (ja) 2005-09-29

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