JP5073257B2 - 単結晶製造装置及び方法 - Google Patents
単結晶製造装置及び方法 Download PDFInfo
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- JP5073257B2 JP5073257B2 JP2006262632A JP2006262632A JP5073257B2 JP 5073257 B2 JP5073257 B2 JP 5073257B2 JP 2006262632 A JP2006262632 A JP 2006262632A JP 2006262632 A JP2006262632 A JP 2006262632A JP 5073257 B2 JP5073257 B2 JP 5073257B2
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- 239000013078 crystal Substances 0.000 title claims description 123
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 42
- 230000008859 change Effects 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 18
- 238000013459 approach Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
11 制御装置
12 チャンバ
13 ホットゾーン(炉)
16 上段ヒータ
18 下段ヒータ
36 パイロメータ
40 直径制御器
42 直径検出用カメラ
44 結晶昇降モータ
46 エンコーダ
50 速度制御器
52 加算器
60 温度制御器
62 電力演算器
64 上段ヒータ電源
66 下段ヒータ電源
70,72,74 固定電力比率温度設定値
80 可変電力比率温度設定値
82 電力比率設定値
120 温度設定値計算装置
152 電力比率−温度設定値テーブル
Claims (7)
- チョクラルスキー法による単結晶製造装置(10)において、
坩堝(14)を加熱するための複数段のヒータ(16,18)と、
前記坩堝(14)から結晶(22)を引上げる昇降装置(44)と、
前記単結晶製造装置(10)の所定部位にて前記ヒータ(16,18)による加熱で生じた加熱温度を測定する温度測定器(36)と、
前記結晶(22)の直径を測定する直径測定器(42)と、
前記昇降装置(44)による引上速度を測定する速度測定器(46)と、
直径設定値と速度設定値と可変電力比率温度設定値(80)と電力比率設定値(82)とを有し、前記温度測定器(36)、前記直径測定器(42)および前記速度測定器(46)からの測定値を入力し、前記複数段のヒータ(16,18)の電力比率を前記電力比率設定値(82)に従わせつつ、前記温度測定器(36)、前記直径測定器(42)および前記速度測定器(46)からの測定値と前記直径設定値と前記速度設定値と前記可変電力比率温度設定値(80)とに基づいて、前記昇降装置(44)による前記引上速度と前記複数段のヒータ(16,18)の電力とを制御する制御装置(11)と
を備え、
前記電力比率設定値(82)は、結晶引上工程の進行状態に応じて変化し、
前記可変電力比率温度設定値(80)は、前記電力比率設定値の現在値に対応した温度値になるように、前記電力比率設定値の変化に伴なって変化する
ことを特徴とする単結晶製造装置。 - 請求項1記載の単結晶製造装置において、
前記可変電力比率温度設定値(80)は、前記電力比率設定値(82)の変化によって生じる前記加熱温度の測定値の変化を補償するように設定されることを特徴とする単結晶製造装置。 - 請求項2記載の単結晶製造装置において、
前記電力比率設定値(82)の変化によって変化する前記加熱温度の測定値と、前記測定値が得られた時点での結晶(22)の位置との間の関係を定義した予め用意されたデータテーブルに基づいて、前記可変電力比率温度設定値(80)が設定されることを特徴とする単結晶製造装置。 - 請求項2記載の単結晶製造装置において、
前記可変電力比率温度設定値(80)は、前記電力比率設定値が第1の比率値から別の第2の比率値に変化するときに、前記第1の比率に対応する第1の固定電力比率温度設定値(70または74)から前記第2の比率に対応する第2の固定電力比率温度設定値(74または72)へとシフトするものであることを特徴とする単結晶製造装置。 - 請求項1記載の単結晶製造装置において、
前記制御装置(11)は、前記直径の測定値を前記直径設定値に近づけるよう前記引上速度を制御し、前記引上速度の測定値を前記速度設定値に近づけるように前記可変電力比率温度設定値を調整して温度目標値を決定し、そして、前記複数段のヒータ(16,18)の電力比率を前記電力比率設定値(82)に従わせつつ、前記加熱温度の測定値を前記温度目標値に近づけるように前記複数段のヒータ(16,18)の電力を制御することを特徴とする単結晶製造装置。 - 請求項1記載の単結晶製造装置において、
前記制御装置(11)が、前記電力比率設定値(82)と、電力比率と前記加熱温度との関係を表す情報(152)とに基づいて、前記可変電力比率温度設定値を算出する手段を有することを特徴とする単結晶製造装置。 - チョクラルスキー法による単結晶製造方法において、
複数段のヒータ(16,18)により坩堝(14)を加熱するステップと、
前記坩堝(14)から結晶(22)を引上げるステップと、
前記ヒータ(16,18)による加熱で生じた加熱温度を測定するステップと、
前記結晶(22)の直径を測定するステップと、
前記結晶(22)の引上速度を測定するステップと、
直径設定値と速度設定値と可変電力比率温度設定値(80)と電力比率設定値(82)とを有するステップと、
前記複数段のヒータ(16,18)の電力比率を前記電力比率設定値(82)に従わせつつ、前記加熱温度、前記直径および前記引上速度の測定値と前記直径設定値と前記速度設定値と前記可変電力比率温度設定値(80)とに基づいて、前記引上速度と前記複数段のヒータ(16,18)の電力とを制御するステップと、
前記電力比率設定値(82)を結晶引上工程の進行状態に応じて変化させるステップと、
前記可変電力比率温度設定値(80)を、前記電力比率設定値の現在値に対応した温度値になるように、前記電力比率設定値の変化に伴なって変化させるステップと
を有することを特徴とする単結晶製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006262632A JP5073257B2 (ja) | 2006-09-27 | 2006-09-27 | 単結晶製造装置及び方法 |
PCT/JP2007/064363 WO2008038450A1 (en) | 2006-09-27 | 2007-07-20 | Single crystal manufacturing apparatus and method |
EP07791100.6A EP2071060B1 (en) | 2006-09-27 | 2007-07-20 | Single crystal manufacturing method |
US12/311,111 US8216371B2 (en) | 2006-09-27 | 2007-07-20 | Single crystal manufacturing apparatus and method |
TW096128180A TW200815628A (en) | 2006-09-27 | 2007-08-01 | Single crystal manufacturing apparatus and method |
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JP2006262632A JP5073257B2 (ja) | 2006-09-27 | 2006-09-27 | 単結晶製造装置及び方法 |
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JP2008081352A JP2008081352A (ja) | 2008-04-10 |
JP5073257B2 true JP5073257B2 (ja) | 2012-11-14 |
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US (1) | US8216371B2 (ja) |
EP (1) | EP2071060B1 (ja) |
JP (1) | JP5073257B2 (ja) |
TW (1) | TW200815628A (ja) |
WO (1) | WO2008038450A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100024717A1 (en) | 2008-07-31 | 2010-02-04 | Benno Orschel | Reversed action diameter control in a semiconductor crystal growth system |
DE102009056638B4 (de) * | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
JP5708171B2 (ja) * | 2010-04-26 | 2015-04-30 | 株式会社Sumco | シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法 |
JP5552891B2 (ja) * | 2010-05-12 | 2014-07-16 | 信越半導体株式会社 | 単結晶製造装置および単結晶の製造方法 |
KR101759003B1 (ko) * | 2015-12-30 | 2017-07-17 | 주식회사 엘지실트론 | 실리콘 단결정 성장 방법 |
JP7184025B2 (ja) * | 2019-12-06 | 2022-12-06 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN113622017A (zh) * | 2020-05-09 | 2021-11-09 | 隆基绿能科技股份有限公司 | 一种单晶硅掺杂方法及单晶硅制造方法 |
CN115584557A (zh) * | 2022-11-08 | 2023-01-10 | 晶科能源股份有限公司 | 一种温度控制方法和设备、单晶炉 |
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JPS515993B2 (ja) * | 1971-10-18 | 1976-02-24 | ||
JPH0669917B2 (ja) * | 1982-10-08 | 1994-09-07 | 住友電気工業株式会社 | 複数段ヒ−タ−の制御方法 |
JPS6046993A (ja) * | 1983-08-23 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上装置 |
JPS62153191A (ja) | 1985-12-27 | 1987-07-08 | Mitsubishi Metal Corp | 単結晶引き上げ装置 |
JP2681115B2 (ja) * | 1989-02-14 | 1997-11-26 | 住友シチックス株式会社 | 単結晶製造方法 |
DE4301072B4 (de) * | 1993-01-16 | 2006-08-24 | Crystal Growing Systems Gmbh | Verfahren zum Ziehen von Einkristallen aus einer Schmelze |
JPH09118585A (ja) * | 1995-10-26 | 1997-05-06 | Kokusai Electric Co Ltd | 単結晶引上装置および単結晶の引上方法 |
DE19824838A1 (de) * | 1998-06-04 | 1999-12-09 | Leybold Systems Gmbh | Verfahren zum Herstellen von Kristallen |
JP2000203987A (ja) * | 1999-01-14 | 2000-07-25 | Toshiba Ceramics Co Ltd | 単結晶製造装置 |
DE19959416C1 (de) * | 1999-12-09 | 2001-03-15 | Freiberger Compound Mat Gmbh | Heizelement zum Beheizen von Schmelztiegeln und Anordnung von Heizelementen |
JP2002321995A (ja) * | 2001-04-23 | 2002-11-08 | Mitsui Chemicals Inc | 単結晶の育成方法 |
DE10220964B4 (de) * | 2002-05-06 | 2006-11-02 | Pv Silicon Forschungs- Und Produktions Ag | Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation |
DE112005000715B4 (de) * | 2004-03-31 | 2016-02-04 | Komatsu Denshi Kinzoku K.K. | Halbleitereinkristall-Herstellungsvorrichtung |
US20060005761A1 (en) * | 2004-06-07 | 2006-01-12 | Memc Electronic Materials, Inc. | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length |
-
2006
- 2006-09-27 JP JP2006262632A patent/JP5073257B2/ja active Active
-
2007
- 2007-07-20 WO PCT/JP2007/064363 patent/WO2008038450A1/ja active Application Filing
- 2007-07-20 US US12/311,111 patent/US8216371B2/en active Active
- 2007-07-20 EP EP07791100.6A patent/EP2071060B1/en active Active
- 2007-08-01 TW TW096128180A patent/TW200815628A/zh unknown
Also Published As
Publication number | Publication date |
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TW200815628A (en) | 2008-04-01 |
WO2008038450A1 (en) | 2008-04-03 |
US8216371B2 (en) | 2012-07-10 |
US20090293800A1 (en) | 2009-12-03 |
EP2071060B1 (en) | 2014-10-08 |
TWI354717B (ja) | 2011-12-21 |
JP2008081352A (ja) | 2008-04-10 |
EP2071060A1 (en) | 2009-06-17 |
EP2071060A4 (en) | 2010-09-01 |
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