JP4555677B2 - 連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置 - Google Patents
連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置 Download PDFInfo
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- JP4555677B2 JP4555677B2 JP2004501673A JP2004501673A JP4555677B2 JP 4555677 B2 JP4555677 B2 JP 4555677B2 JP 2004501673 A JP2004501673 A JP 2004501673A JP 2004501673 A JP2004501673 A JP 2004501673A JP 4555677 B2 JP4555677 B2 JP 4555677B2
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- Prior art keywords
- induction coil
- crystal rod
- crystallization
- melting
- rod
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Description
Claims (7)
- 連続的結晶化により所定の横断面と柱状の多結晶構造を有する結晶ロッドを製造するための装置であって、該装置が、少なくとも、結晶材料を充填された溶融容器を有しており、該溶融容器に、溶融容器の下方に配置された高さ調節可能な成長する結晶ロッド上へ溶融容器内容を搬送するための中央の導出管が設けられており、該中央の導出管が、結晶ロッドの上端面の溶融メニスカス内に潜入しており、かつ前記装置が、固体の結晶材料を常に制御可能に溶融容器に供給するための手段を有しており、溶融エネルギを供給する手段を有しており、成長する結晶ロッド上の結晶化フロントを調節するための手段を有している形式のものにおいて、
溶融エネルギの供給、及び成長する結晶ロッド(8)上の結晶化フロントを調節を同時的に行うための共通の手段として、開口を有する平坦な誘導コイル(5)が配置されており、
誘導コイル(5)と溶融容器(4)との間の間隔、及び誘導コイル(5)と結晶化フロントとの間の間隔が調節可能であり、かつ次のように調節されている、すなわち、
誘導コイル(5)の上方では溶融容器(4)内で結晶材料が溶融され、かつ
誘導コイル5の下方では、誘導コイル(5)の開口を通って、成長する結晶ロッド(8)の表面へ案内されている中央の管状の導出管を通って搬送された、溶融された材料が結晶化されるように調節されており、
誘導コイル(5)は、結晶ロッド(8)の望ましい横断面に適合された温度領域が形成されるように形成されており、かつ
成長する結晶ロッド(8)上に近接して、融液に接触するフレーム(6)が配置されている
ことを特徴とする、連続的な結晶化により、所定の横断面と柱状の多結晶構造を有する結晶ロッドを形成するための装置。 - フレーム(6)が、耐久性のある材料により形成されており、かつ所定の幾何学形状を有している、請求項1記載の装置。
- 溶融容器(4)内の原料を溶融するための付加的な光学的な加熱装置が、誘導コイル(5)の上方に配置されている、請求項1記載の装置。
- 溶融容器(4)の底部が、円筒状の導出管との結合部で、高められて形成されている、請求項1記載の装置。
- 放射保護板が、結晶化フロントの高さで、結晶ロッド(8)を中心として配置されている、請求項1記載の装置。
- 誘導コイル(5)が、正方形の形状を有している、請求項1記載の装置。
- 誘導コイル(5)が、長方形の形状を有している、請求項1記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10220964A DE10220964B4 (de) | 2002-05-06 | 2002-05-06 | Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation |
PCT/DE2003/001515 WO2003093540A1 (de) | 2002-05-06 | 2003-05-06 | Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005529046A JP2005529046A (ja) | 2005-09-29 |
JP4555677B2 true JP4555677B2 (ja) | 2010-10-06 |
Family
ID=29285284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004501673A Expired - Fee Related JP4555677B2 (ja) | 2002-05-06 | 2003-05-06 | 連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7326297B2 (ja) |
EP (1) | EP1509642B1 (ja) |
JP (1) | JP4555677B2 (ja) |
AT (1) | ATE367462T1 (ja) |
AU (1) | AU2003229290A1 (ja) |
DE (2) | DE10220964B4 (ja) |
DK (1) | DK1509642T3 (ja) |
ES (1) | ES2290458T3 (ja) |
NO (1) | NO20045319L (ja) |
WO (1) | WO2003093540A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005063346B4 (de) | 2005-04-06 | 2010-10-28 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt |
JP5073257B2 (ja) * | 2006-09-27 | 2012-11-14 | Sumco Techxiv株式会社 | 単結晶製造装置及び方法 |
JP5484589B2 (ja) * | 2009-11-24 | 2014-05-07 | フォルシュングスフェアブント ベルリン エー ファウ | 半導体材料から単結晶を製造する方法および装置 |
DE102012213506A1 (de) * | 2012-07-31 | 2014-02-06 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102012215677B3 (de) * | 2012-09-04 | 2013-10-10 | Siltronic Ag | Verfahren zum Herstellen eines Einkristalls aus Silizium |
JP2014062044A (ja) * | 2013-12-11 | 2014-04-10 | National Institute For Materials Science | 四角形の単結晶シリコンウェ−ハ |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102014226419A1 (de) | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
CN114941171B (zh) * | 2022-05-25 | 2023-03-24 | 宇泽半导体(云南)有限公司 | 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1220832B (de) * | 1964-09-22 | 1966-07-14 | Siemens Ag | Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze |
US4565600A (en) * | 1981-04-27 | 1986-01-21 | Criceram | Processes for the continuous preparation of single crystals |
DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
US5454424A (en) * | 1991-12-18 | 1995-10-03 | Nobuyuki Mori | Method of and apparatus for casting crystalline silicon ingot by electron bean melting |
JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
JP2833478B2 (ja) * | 1994-05-18 | 1998-12-09 | 信越半導体株式会社 | シリコン単結晶成長方法 |
JPH08333188A (ja) * | 1995-04-06 | 1996-12-17 | Komatsu Electron Metals Co Ltd | Fz法による半導体単結晶製造装置 |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
DE19610650B4 (de) * | 1996-03-06 | 2004-03-18 | Forschungsverbund Berlin E.V. | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben |
JP3759807B2 (ja) * | 1997-03-12 | 2006-03-29 | 日本碍子株式会社 | 酸化物単結晶体の製造方法およびその装置 |
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2002
- 2002-05-06 DE DE10220964A patent/DE10220964B4/de not_active Expired - Fee Related
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2003
- 2003-05-06 DE DE50307712T patent/DE50307712D1/de not_active Expired - Lifetime
- 2003-05-06 JP JP2004501673A patent/JP4555677B2/ja not_active Expired - Fee Related
- 2003-05-06 US US10/513,320 patent/US7326297B2/en not_active Expired - Fee Related
- 2003-05-06 ES ES03724889T patent/ES2290458T3/es not_active Expired - Lifetime
- 2003-05-06 WO PCT/DE2003/001515 patent/WO2003093540A1/de active IP Right Grant
- 2003-05-06 AU AU2003229290A patent/AU2003229290A1/en not_active Abandoned
- 2003-05-06 EP EP03724889A patent/EP1509642B1/de not_active Expired - Lifetime
- 2003-05-06 AT AT03724889T patent/ATE367462T1/de not_active IP Right Cessation
- 2003-05-06 DK DK03724889T patent/DK1509642T3/da active
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- 2004-12-03 NO NO20045319A patent/NO20045319L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE10220964A8 (de) | 2004-07-08 |
EP1509642A1 (de) | 2005-03-02 |
DK1509642T3 (da) | 2007-11-05 |
NO20045319L (no) | 2004-12-03 |
US7326297B2 (en) | 2008-02-05 |
DE50307712D1 (de) | 2007-08-30 |
EP1509642B1 (de) | 2007-07-18 |
US20050188918A1 (en) | 2005-09-01 |
ES2290458T3 (es) | 2008-02-16 |
AU2003229290A1 (en) | 2003-11-17 |
DE10220964B4 (de) | 2006-11-02 |
WO2003093540A1 (de) | 2003-11-13 |
ATE367462T1 (de) | 2007-08-15 |
JP2005529046A (ja) | 2005-09-29 |
DE10220964A1 (de) | 2003-11-27 |
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