CN114941171B - 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 - Google Patents
一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 Download PDFInfo
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- CN114941171B CN114941171B CN202210575449.5A CN202210575449A CN114941171B CN 114941171 B CN114941171 B CN 114941171B CN 202210575449 A CN202210575449 A CN 202210575449A CN 114941171 B CN114941171 B CN 114941171B
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- crucible
- quasi
- single crystal
- heater
- silicon rod
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000013078 crystal Substances 0.000 claims abstract description 120
- 239000010453 quartz Substances 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 50
- 238000005192 partition Methods 0.000 claims description 43
- 238000006073 displacement reaction Methods 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 36
- 238000002425 crystallisation Methods 0.000 claims description 25
- 230000008025 crystallization Effects 0.000 claims description 25
- 230000005484 gravity Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000000007 visual effect Effects 0.000 claims description 3
- 238000011179 visual inspection Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 7
- 239000011261 inert gas Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004134 energy conservation Methods 0.000 abstract 1
- 238000004886 process control Methods 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
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CN202210575449.5A CN114941171B (zh) | 2022-05-25 | 2022-05-25 | 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 |
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CN202210575449.5A CN114941171B (zh) | 2022-05-25 | 2022-05-25 | 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 |
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CN114941171A CN114941171A (zh) | 2022-08-26 |
CN114941171B true CN114941171B (zh) | 2023-03-24 |
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Families Citing this family (2)
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CN115522258B (zh) * | 2022-10-08 | 2023-04-18 | 宇泽半导体(云南)有限公司 | 异形硅单晶棒及其拉制所用石英坩埚以及生长方法 |
CN118516745B (zh) * | 2024-07-24 | 2024-09-27 | 苏州晨晖智能设备有限公司 | 直拉法制备矩形硅单晶锭的装置、方法及硅单晶锭 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10220964B4 (de) * | 2002-05-06 | 2006-11-02 | Pv Silicon Forschungs- Und Produktions Ag | Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation |
JP4314974B2 (ja) * | 2003-11-11 | 2009-08-19 | 信越半導体株式会社 | シリコン単結晶の製造方法及びシリコン単結晶 |
JP2010037142A (ja) * | 2008-08-05 | 2010-02-18 | Mitsubishi Materials Techno Corp | 単結晶シリコンの製造方法及び製造装置 |
CN103173850A (zh) * | 2011-12-21 | 2013-06-26 | 卉欣光电科技(江苏)有限公司 | 单晶硅制造工艺 |
CN205874583U (zh) * | 2016-06-17 | 2017-01-11 | 山东天岳晶体材料有限公司 | 一种可校准的籽晶生长装置 |
CN114481300A (zh) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | 一种单晶炉直拉对中校准系统及校准方法 |
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Address after: 675000 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee after: Yunnan Yuze Semiconductor Co.,Ltd. Address before: 675000 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yuze semiconductor (Yunnan) Co.,Ltd. |
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Address after: No. 69 Waizhou Road, Yihai Community, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province, 675000 Patentee after: Yunnan Yuze New Energy Co.,Ltd. Country or region after: China Address before: 675000 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yunnan Yuze Semiconductor Co.,Ltd. Country or region before: China |
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