NO20004236L - Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme - Google Patents
Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av sammeInfo
- Publication number
- NO20004236L NO20004236L NO20004236A NO20004236A NO20004236L NO 20004236 L NO20004236 L NO 20004236L NO 20004236 A NO20004236 A NO 20004236A NO 20004236 A NO20004236 A NO 20004236A NO 20004236 L NO20004236 L NO 20004236L
- Authority
- NO
- Norway
- Prior art keywords
- segment
- memory
- bit lines
- bit
- sensing means
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Peptides Or Proteins (AREA)
- Read Only Memory (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Magnetic Record Carriers (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20004236A NO20004236L (no) | 2000-08-24 | 2000-08-24 | Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme |
US09/899,096 US20020024835A1 (en) | 2000-07-07 | 2001-07-06 | Non-volatile passive matrix device and method for readout of the same |
NO20014136A NO318368B1 (no) | 2000-08-24 | 2001-08-24 | Ikke-flyktig passiv matriseinnretning og fremgangsmate for utlesing av samme |
DE60109307T DE60109307T2 (de) | 2000-08-24 | 2001-08-24 | Nichtfluechtige passive speicherarray und sein leseverfahren |
DK01985301T DK1316090T3 (da) | 2000-08-24 | 2001-08-24 | Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne |
CA002420378A CA2420378C (en) | 2000-08-24 | 2001-08-24 | Non-volatile passive matrix and method for readout of the same |
RU2003108726/09A RU2245584C2 (ru) | 2000-08-24 | 2001-08-24 | Энергонезависимая пассивная матрица, способ считывания из подобной матрицы и устройство трехмерного хранения данных |
EP01985301A EP1316090B1 (de) | 2000-08-24 | 2001-08-24 | Nichtfluechtige passive speicherarray und sein leseverfahren |
PCT/NO2001/000348 WO2002025665A2 (en) | 2000-08-24 | 2001-08-24 | Non-volatile passive matrix and method for readout of the same |
KR1020037002558A KR100540266B1 (ko) | 2000-08-24 | 2001-08-24 | 비휘발성 수동 매트릭스 디바이스 및 그 독출 방법 |
ES01985301T ES2238053T3 (es) | 2000-08-24 | 2001-08-24 | Matriz pasiva no volatil y metodo para la lectura de la misma. |
CNB018178707A CN100530420C (zh) | 2000-08-24 | 2001-08-24 | 非易失性无源矩阵器件及其读出方法 |
AU2002223159A AU2002223159B2 (en) | 2000-08-24 | 2001-08-24 | Non-volatile passive matrix and method for readout of the same |
JP2002529782A JP3848620B2 (ja) | 2000-08-24 | 2001-08-24 | 不揮発性受動マトリックス装置および同装置の読み出し方法 |
AT01985301T ATE290711T1 (de) | 2000-08-24 | 2001-08-24 | Nichtfluechtige passive speicherarray und sein leseverfahren |
AU2315902A AU2315902A (en) | 2000-08-24 | 2001-08-24 | Non-volatile passive matrix and method for readout of the same |
US10/088,913 US20030137865A1 (en) | 2000-08-24 | 2001-09-24 | Non-volatile passive matrix device and method for readout of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20004236A NO20004236L (no) | 2000-08-24 | 2000-08-24 | Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20004236D0 NO20004236D0 (no) | 2000-08-24 |
NO20004236L true NO20004236L (no) | 2002-02-25 |
Family
ID=19911499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20004236A NO20004236L (no) | 2000-07-07 | 2000-08-24 | Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme |
Country Status (14)
Country | Link |
---|---|
US (1) | US20030137865A1 (de) |
EP (1) | EP1316090B1 (de) |
JP (1) | JP3848620B2 (de) |
KR (1) | KR100540266B1 (de) |
CN (1) | CN100530420C (de) |
AT (1) | ATE290711T1 (de) |
AU (2) | AU2002223159B2 (de) |
CA (1) | CA2420378C (de) |
DE (1) | DE60109307T2 (de) |
DK (1) | DK1316090T3 (de) |
ES (1) | ES2238053T3 (de) |
NO (1) | NO20004236L (de) |
RU (1) | RU2245584C2 (de) |
WO (1) | WO2002025665A2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
NO314524B1 (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten |
US6996652B1 (en) * | 2002-09-19 | 2006-02-07 | Inapac Technology, Inc. | High-speed segmented data bus architecture |
NO324607B1 (no) * | 2003-11-24 | 2007-11-26 | Thin Film Electronics Asa | Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering |
KR100576484B1 (ko) * | 2003-12-09 | 2006-05-10 | 주식회사 하이닉스반도체 | 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치 |
NO324029B1 (no) * | 2004-09-23 | 2007-07-30 | Thin Film Electronics Asa | Lesemetode og deteksjonsanordning |
CN100466036C (zh) * | 2005-06-30 | 2009-03-04 | 精工爱普生株式会社 | 显示装置及电子设备 |
TWI260643B (en) | 2005-12-30 | 2006-08-21 | Ind Tech Res Inst | Organic memory |
CN1996495B (zh) * | 2005-12-31 | 2010-11-03 | 财团法人工业技术研究院 | 有机存储器之位单元 |
CN1996486B (zh) * | 2005-12-31 | 2010-11-03 | 财团法人工业技术研究院 | 数字感测电路 |
EP1944763A1 (de) * | 2007-01-12 | 2008-07-16 | STMicroelectronics S.r.l. | Leseschaltung und Leseverfahren für Datenspeichersystem |
US9574326B2 (en) | 2012-08-02 | 2017-02-21 | Harnischfeger Technologies, Inc. | Depth-related help functions for a shovel training simulator |
AU2014202349A1 (en) | 2012-08-02 | 2014-05-22 | Harnischfeger Technologies, Inc. | Depth-related help functions for a wheel loader training simulator |
JP5714681B2 (ja) * | 2013-10-25 | 2015-05-07 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US9773553B1 (en) * | 2016-08-19 | 2017-09-26 | Micron Technology, Inc. | Segmented memory and operation |
CN110073440B (zh) | 2016-10-10 | 2022-04-29 | 塞姆隆有限责任公司 | 电容矩阵布置及其激励方法 |
DE102016012071A1 (de) | 2016-10-10 | 2018-04-12 | Kai-Uwe Demasius | Matrix mit kapazitiver Steuerungsvorrichtung |
US11102437B2 (en) * | 2018-11-20 | 2021-08-24 | Samsung Electronics Co., Ltd. | Memory circuit and semiconductor device |
US20210258173A1 (en) * | 2020-02-18 | 2021-08-19 | International Business Machines Corporation | Gain cell memory based physically unclonable function |
US11309034B2 (en) * | 2020-07-15 | 2022-04-19 | Ferroelectric Memory Gmbh | Memory cell arrangement and methods thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599709A (en) * | 1984-02-17 | 1986-07-08 | At&T Bell Laboratories | Byte organized static memory |
DE68923573T2 (de) * | 1988-03-31 | 1996-01-18 | Sony Corp | Eingangsschaltungen. |
JP2982905B2 (ja) * | 1989-10-02 | 1999-11-29 | 三菱電機株式会社 | ダイナミック型半導体記憶装置 |
US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
KR950011965B1 (ko) * | 1992-02-19 | 1995-10-12 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
TW231343B (de) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
JPH0677434A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 半導体記憶装置 |
US5337414A (en) * | 1992-09-22 | 1994-08-09 | Unisys Corporation | Mass data storage and retrieval system |
US5424997A (en) * | 1994-03-15 | 1995-06-13 | National Semiconductor Corporation | Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof |
US5567636A (en) * | 1995-02-27 | 1996-10-22 | Motorola Inc. | Process for forming a nonvolatile random access memory array |
US5574692A (en) * | 1995-06-07 | 1996-11-12 | Lsi Logic Corporation | Memory testing apparatus for microelectronic integrated circuit |
US5969380A (en) * | 1996-06-07 | 1999-10-19 | Micron Technology, Inc. | Three dimensional ferroelectric memory |
-
2000
- 2000-08-24 NO NO20004236A patent/NO20004236L/no not_active Application Discontinuation
-
2001
- 2001-08-24 AT AT01985301T patent/ATE290711T1/de not_active IP Right Cessation
- 2001-08-24 KR KR1020037002558A patent/KR100540266B1/ko not_active IP Right Cessation
- 2001-08-24 AU AU2002223159A patent/AU2002223159B2/en not_active Ceased
- 2001-08-24 JP JP2002529782A patent/JP3848620B2/ja not_active Expired - Fee Related
- 2001-08-24 EP EP01985301A patent/EP1316090B1/de not_active Expired - Lifetime
- 2001-08-24 WO PCT/NO2001/000348 patent/WO2002025665A2/en active IP Right Grant
- 2001-08-24 ES ES01985301T patent/ES2238053T3/es not_active Expired - Lifetime
- 2001-08-24 CA CA002420378A patent/CA2420378C/en not_active Expired - Fee Related
- 2001-08-24 AU AU2315902A patent/AU2315902A/xx active Pending
- 2001-08-24 DE DE60109307T patent/DE60109307T2/de not_active Expired - Lifetime
- 2001-08-24 DK DK01985301T patent/DK1316090T3/da active
- 2001-08-24 CN CNB018178707A patent/CN100530420C/zh not_active Expired - Fee Related
- 2001-08-24 RU RU2003108726/09A patent/RU2245584C2/ru not_active IP Right Cessation
- 2001-09-24 US US10/088,913 patent/US20030137865A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE60109307T2 (de) | 2006-04-13 |
AU2315902A (en) | 2002-04-02 |
WO2002025665A3 (en) | 2002-05-16 |
CA2420378A1 (en) | 2002-03-28 |
AU2002223159B2 (en) | 2005-04-14 |
WO2002025665A2 (en) | 2002-03-28 |
ES2238053T3 (es) | 2005-08-16 |
CN1471712A (zh) | 2004-01-28 |
CA2420378C (en) | 2006-05-09 |
EP1316090A2 (de) | 2003-06-04 |
ATE290711T1 (de) | 2005-03-15 |
NO20004236D0 (no) | 2000-08-24 |
JP2004510283A (ja) | 2004-04-02 |
JP3848620B2 (ja) | 2006-11-22 |
DK1316090T3 (da) | 2005-05-30 |
KR20030059110A (ko) | 2003-07-07 |
RU2245584C2 (ru) | 2005-01-27 |
CN100530420C (zh) | 2009-08-19 |
KR100540266B1 (ko) | 2006-01-10 |
EP1316090B1 (de) | 2005-03-09 |
DE60109307D1 (de) | 2005-04-14 |
US20030137865A1 (en) | 2003-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |