NO20001630L - Mikromekanisk halvlederakselerometer - Google Patents
Mikromekanisk halvlederakselerometerInfo
- Publication number
- NO20001630L NO20001630L NO20001630A NO20001630A NO20001630L NO 20001630 L NO20001630 L NO 20001630L NO 20001630 A NO20001630 A NO 20001630A NO 20001630 A NO20001630 A NO 20001630A NO 20001630 L NO20001630 L NO 20001630L
- Authority
- NO
- Norway
- Prior art keywords
- etched
- accelerometer
- cover layers
- assembly
- semiconductor accelerometer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/127,643 US6105427A (en) | 1998-07-31 | 1998-07-31 | Micro-mechanical semiconductor accelerometer |
PCT/US1999/016774 WO2000007028A1 (en) | 1998-07-31 | 1999-07-22 | Micro-mechanical semiconductor accelerometer |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20001630D0 NO20001630D0 (no) | 2000-03-29 |
NO20001630L true NO20001630L (no) | 2000-05-25 |
Family
ID=22431145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20001630A NO20001630L (no) | 1998-07-31 | 2000-03-29 | Mikromekanisk halvlederakselerometer |
Country Status (10)
Country | Link |
---|---|
US (2) | US6105427A (no) |
EP (2) | EP1582877A1 (no) |
JP (1) | JP4932988B2 (no) |
AT (1) | ATE298092T1 (no) |
AU (1) | AU5227799A (no) |
CA (1) | CA2303044A1 (no) |
DE (1) | DE69925803T2 (no) |
IL (2) | IL135290A0 (no) |
NO (1) | NO20001630L (no) |
WO (1) | WO2000007028A1 (no) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6308569B1 (en) * | 1999-07-30 | 2001-10-30 | Litton Systems, Inc. | Micro-mechanical inertial sensors |
JP3666370B2 (ja) * | 2000-07-06 | 2005-06-29 | 株式会社村田製作所 | 外力検知センサ |
US6536280B1 (en) * | 2000-09-12 | 2003-03-25 | Ic Mechanics, Inc. | Thin film MEMS sensors employing electrical sensing and force feedback |
DE10065013B4 (de) * | 2000-12-23 | 2009-12-24 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Bauelements |
US6673694B2 (en) * | 2001-01-02 | 2004-01-06 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
US7381630B2 (en) * | 2001-01-02 | 2008-06-03 | The Charles Stark Draper Laboratory, Inc. | Method for integrating MEMS device and interposer |
US6946314B2 (en) * | 2001-01-02 | 2005-09-20 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
US6595056B2 (en) * | 2001-02-07 | 2003-07-22 | Litton Systems, Inc | Micromachined silicon gyro using tuned accelerometer |
US6792804B2 (en) | 2001-10-19 | 2004-09-21 | Kionix, Inc. | Sensor for measuring out-of-plane acceleration |
US6776042B2 (en) | 2002-01-25 | 2004-08-17 | Kinemetrics, Inc. | Micro-machined accelerometer |
US7036374B2 (en) * | 2002-01-25 | 2006-05-02 | William Thomas Pike | Micro-machined suspension plate with integral proof mass for use in a seismometer or other device |
US6610582B1 (en) * | 2002-03-26 | 2003-08-26 | Northrop Grumman Corporation | Field-assisted fusion bonding |
US6992399B2 (en) * | 2002-05-24 | 2006-01-31 | Northrop Grumman Corporation | Die connected with integrated circuit component for electrical signal passing therebetween |
US7002225B2 (en) | 2002-05-24 | 2006-02-21 | Northrup Grumman Corporation | Compliant component for supporting electrical interface component |
JP4088120B2 (ja) * | 2002-08-12 | 2008-05-21 | 株式会社ルネサステクノロジ | 半導体装置 |
EP1576650A4 (en) * | 2002-08-15 | 2011-06-15 | Draper Lab Charles S | METHOD FOR MICROUSING STRUCTURES USING SILICON MATERIAL ON INSULATION |
US6765160B1 (en) * | 2002-08-21 | 2004-07-20 | The United States Of America As Represented By The Secetary Of The Army | Omnidirectional microscale impact switch |
US6600644B1 (en) * | 2002-09-03 | 2003-07-29 | Industrial Technology Research Institute | Microelectronic tunable capacitor and method for fabrication |
TW574128B (en) * | 2002-11-29 | 2004-02-01 | Lightuning Tech Inc | Thermal bubble type micro-machined inertial sensor |
US8508643B2 (en) | 2003-01-17 | 2013-08-13 | Hewlett-Packard Development Company, L.P. | Method and system for processing an image |
US7219548B2 (en) * | 2003-04-23 | 2007-05-22 | Northrop Grumman Corporation | Pickoff sensor obtaining of value of parameter from substantially zero net dampening torque location of pendulous sensor component |
US6930368B2 (en) * | 2003-07-31 | 2005-08-16 | Hewlett-Packard Development Company, L.P. | MEMS having a three-wafer structure |
JP4213540B2 (ja) * | 2003-08-20 | 2009-01-21 | 株式会社日立製作所 | 振動発電用振動子 |
JP2005069852A (ja) * | 2003-08-25 | 2005-03-17 | Seiko Instruments Inc | 容量型力学量センサ |
US6981416B2 (en) * | 2003-11-21 | 2006-01-03 | Chung-Shan Institute Of Science And Technology | Multi-axis solid state accelerometer |
US20050132803A1 (en) * | 2003-12-23 | 2005-06-23 | Baldwin David J. | Low cost integrated MEMS hybrid |
EP1711836A1 (en) * | 2004-01-07 | 2006-10-18 | Northrop Grumman Corporation | Coplanar proofmasses employable to sense acceleration along three axes |
US7342575B1 (en) | 2004-04-06 | 2008-03-11 | Hewlett-Packard Development Company, L.P. | Electronic writing systems and methods |
US7640803B1 (en) | 2004-05-26 | 2010-01-05 | Siimpel Corporation | Micro-electromechanical system inertial sensor |
US7360425B2 (en) * | 2004-11-22 | 2008-04-22 | The Boeing Company | Compensated composite structure |
KR100587610B1 (ko) | 2004-12-03 | 2006-06-08 | 매그나칩 반도체 유한회사 | 반도체소자의 다중 레벨의 3차원 집적화 방법 |
FI116544B (fi) * | 2004-12-31 | 2005-12-15 | Vti Technologies Oy | Värähtelevä mikromekaaninen kulmanopeusanturi |
FI116543B (fi) * | 2004-12-31 | 2005-12-15 | Vti Technologies Oy | Värähtelevä mikromekaaninen kulmanopeusanturi |
US7334474B2 (en) * | 2005-01-07 | 2008-02-26 | Litton Systems, Inc. | Force balanced instrument system and method for mitigating errors |
US7238999B2 (en) * | 2005-01-21 | 2007-07-03 | Honeywell International Inc. | High performance MEMS packaging architecture |
US20080213981A1 (en) * | 2005-01-31 | 2008-09-04 | Freescale Semiconductor, Inc. | Method of Fabricating a Silicon-On-Insulator Structure |
CN100458449C (zh) * | 2005-04-15 | 2009-02-04 | 威海双丰物探设备股份有限公司 | 一种电容式mems加速度传感器 |
WO2006123788A1 (ja) * | 2005-05-19 | 2006-11-23 | Rohm Co., Ltd. | Mems素子、memsデバイス、およびmems素子の製造方法 |
WO2006127777A1 (en) * | 2005-05-25 | 2006-11-30 | Northrop Grumman Corporation | Silicon accelerometer chip design for size and thermal distortion reduction and process simplification |
WO2006127813A2 (en) * | 2005-05-25 | 2006-11-30 | Northrop Grumman Corporation | Methods for signal to noise improvement in bulk mems accelerometer chips and other mems devices |
WO2006127776A1 (en) * | 2005-05-25 | 2006-11-30 | Northrop Grumman Corporation | Metal electrodes for elimination of spurious charge effects in accelerometers and other mems devices |
CN100422071C (zh) * | 2005-10-27 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | 微机械加速度计器件的圆片级封装工艺 |
US8129801B2 (en) * | 2006-01-06 | 2012-03-06 | Honeywell International Inc. | Discrete stress isolator attachment structures for MEMS sensor packages |
US20070163346A1 (en) * | 2006-01-18 | 2007-07-19 | Honeywell International Inc. | Frequency shifting of rotational harmonics in mems devices |
JP2007333641A (ja) * | 2006-06-16 | 2007-12-27 | Sony Corp | 慣性センサおよび慣性センサの製造方法 |
US7808061B2 (en) * | 2006-07-28 | 2010-10-05 | Hewlett-Packard Development Company, L.P. | Multi-die apparatus including moveable portions |
US7851876B2 (en) * | 2006-10-20 | 2010-12-14 | Hewlett-Packard Development Company, L.P. | Micro electro mechanical system |
JP5376790B2 (ja) * | 2006-12-04 | 2013-12-25 | キヤノン株式会社 | センサ、及びその製造方法 |
WO2008086537A2 (en) * | 2007-01-11 | 2008-07-17 | Analog Devices, Inc. | Aluminum based bonding of semiconductor wafers |
US7893459B2 (en) | 2007-04-10 | 2011-02-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structures with reduced moisture-induced reliability degradation |
US7614300B2 (en) * | 2007-05-30 | 2009-11-10 | Northrop Grumman Corporation | System and method for mitigating errors in electrostatic force balanced instrument |
CN100439864C (zh) * | 2007-06-01 | 2008-12-03 | 北京沃尔康科技有限责任公司 | 一种新型硅微机械陀螺 |
US8109145B2 (en) * | 2007-07-31 | 2012-02-07 | Northrop Grumman Guidance And Electronics Company, Inc. | Micro hemispheric resonator gyro |
US20090085194A1 (en) * | 2007-09-28 | 2009-04-02 | Honeywell International Inc. | Wafer level packaged mems device |
US8468887B2 (en) * | 2008-04-14 | 2013-06-25 | Freescale Semiconductor, Inc. | Resonant accelerometer with low sensitivity to package stress |
DE102008043790B4 (de) * | 2008-11-17 | 2017-04-06 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
US8307710B2 (en) * | 2009-07-09 | 2012-11-13 | Honeywell International Inc. | Translational mass in-plane MEMS accelerometer |
WO2011073935A2 (en) | 2009-12-16 | 2011-06-23 | Y-Sensors Ltd. | Tethered, levitated-mass accelerometer |
JP5527015B2 (ja) | 2010-05-26 | 2014-06-18 | セイコーエプソン株式会社 | 素子構造体、慣性センサー、電子機器 |
JP5527017B2 (ja) * | 2010-05-27 | 2014-06-18 | セイコーエプソン株式会社 | 素子構造体、慣性センサーおよび電子機器 |
CN101865933A (zh) * | 2010-06-07 | 2010-10-20 | 瑞声声学科技(深圳)有限公司 | 差分电容式加速度传感器 |
US8919199B2 (en) * | 2010-12-01 | 2014-12-30 | Analog Devices, Inc. | Apparatus and method for anchoring electrodes in MEMS devices |
US9502993B2 (en) * | 2011-02-07 | 2016-11-22 | Ion Geophysical Corporation | Method and apparatus for sensing signals |
CN102721829B (zh) * | 2012-07-09 | 2014-04-16 | 中国科学院上海微系统与信息技术研究所 | 电容式微加速度传感器及其单片制作方法 |
US9341646B2 (en) | 2012-12-19 | 2016-05-17 | Northrop Grumman Guidance And Electronics Company, Inc. | Bias reduction in force rebalanced accelerometers |
US9709595B2 (en) | 2013-11-14 | 2017-07-18 | Analog Devices, Inc. | Method and apparatus for detecting linear and rotational movement |
US9599471B2 (en) | 2013-11-14 | 2017-03-21 | Analog Devices, Inc. | Dual use of a ring structure as gyroscope and accelerometer |
CN104355286B (zh) * | 2014-10-13 | 2016-04-13 | 华东光电集成器件研究所 | 一种全硅mems器件结构及其制造方法 |
US10746548B2 (en) | 2014-11-04 | 2020-08-18 | Analog Devices, Inc. | Ring gyroscope structural features |
WO2016103342A1 (ja) * | 2014-12-24 | 2016-06-30 | 株式会社日立製作所 | 慣性センサおよびその製造方法 |
US10816568B2 (en) | 2017-12-26 | 2020-10-27 | Physical Logic Ltd. | Closed loop accelerometer |
US11656077B2 (en) | 2019-01-31 | 2023-05-23 | Analog Devices, Inc. | Pseudo-extensional mode MEMS ring gyroscope |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4609968A (en) * | 1984-05-18 | 1986-09-02 | Becton, Dickinson And Company | Glass inlays for use in bonding semiconductor wafers |
JPH061228B2 (ja) * | 1987-08-13 | 1994-01-05 | 富士電機株式会社 | 静電容量式圧力検出器 |
US5007289A (en) * | 1988-09-30 | 1991-04-16 | Litton Systems, Inc. | Three axis inertial measurement unit with counterbalanced, low inertia mechanical oscillator |
JPH0623782B2 (ja) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | 静電容量式加速度センサ及び半導体圧力センサ |
US5006487A (en) * | 1989-07-27 | 1991-04-09 | Honeywell Inc. | Method of making an electrostatic silicon accelerometer |
US5065627A (en) * | 1990-03-20 | 1991-11-19 | Litton Systems, Inc. | Three axis inertial measurement unit with counterbalanced, low inertia mechanical oscillator |
US5142291A (en) * | 1990-08-03 | 1992-08-25 | Hughes Aircraft Company | Passive microwave near-field tomographic imaging system and method |
FR2687777B1 (fr) * | 1992-02-20 | 1994-05-20 | Sextant Avionique | Micro-capteur capacitif a faible capacite parasite et procede de fabrication. |
DE4206173C2 (de) * | 1992-02-28 | 1995-01-26 | Bosch Gmbh Robert | Mikromechanischer Beschleunigungssensor |
DE4222472C2 (de) * | 1992-07-09 | 1998-07-02 | Bosch Gmbh Robert | Beschleunigungssensor |
DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
DE59304431D1 (de) * | 1993-05-05 | 1996-12-12 | Litef Gmbh | Mikromechanische Beschleunigungsmessvorrichtung und Verfahren zu deren Herstellung |
DE4439238A1 (de) * | 1994-11-03 | 1996-05-09 | Telefunken Microelectron | Kapazitiver Beschleunigungssensor |
JPH09113534A (ja) * | 1995-10-23 | 1997-05-02 | Yoshinobu Matsumoto | 加速度センサー |
DE19541388A1 (de) * | 1995-11-07 | 1997-05-15 | Telefunken Microelectron | Mikromechanischer Beschleunigungssensor |
JPH09257832A (ja) * | 1996-03-26 | 1997-10-03 | Matsushita Electric Works Ltd | エレクトレット応用装置及びその製造方法 |
-
1998
- 1998-07-31 US US09/127,643 patent/US6105427A/en not_active Expired - Lifetime
-
1999
- 1999-07-22 IL IL13529099A patent/IL135290A0/xx not_active IP Right Cessation
- 1999-07-22 AU AU52277/99A patent/AU5227799A/en not_active Abandoned
- 1999-07-22 CA CA002303044A patent/CA2303044A1/en not_active Abandoned
- 1999-07-22 EP EP05012323A patent/EP1582877A1/en not_active Withdrawn
- 1999-07-22 WO PCT/US1999/016774 patent/WO2000007028A1/en active IP Right Grant
- 1999-07-22 EP EP99937439A patent/EP1019733B1/en not_active Expired - Lifetime
- 1999-07-22 DE DE69925803T patent/DE69925803T2/de not_active Expired - Lifetime
- 1999-07-22 JP JP2000562765A patent/JP4932988B2/ja not_active Expired - Fee Related
- 1999-07-22 AT AT99937439T patent/ATE298092T1/de not_active IP Right Cessation
-
2000
- 2000-03-29 NO NO20001630A patent/NO20001630L/no not_active Application Discontinuation
- 2000-08-09 US US09/634,214 patent/US6294400B1/en not_active Expired - Lifetime
-
2004
- 2004-04-20 IL IL161532A patent/IL161532A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1019733B1 (en) | 2005-06-15 |
IL161532A (en) | 2008-12-29 |
DE69925803D1 (de) | 2005-07-21 |
DE69925803T2 (de) | 2005-11-03 |
IL135290A0 (en) | 2001-05-20 |
US6105427A (en) | 2000-08-22 |
CA2303044A1 (en) | 2000-02-10 |
ATE298092T1 (de) | 2005-07-15 |
EP1019733A1 (en) | 2000-07-19 |
NO20001630D0 (no) | 2000-03-29 |
EP1582877A1 (en) | 2005-10-05 |
WO2000007028A1 (en) | 2000-02-10 |
JP4932988B2 (ja) | 2012-05-16 |
JP2002521695A (ja) | 2002-07-16 |
US6294400B1 (en) | 2001-09-25 |
AU5227799A (en) | 2000-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO20001630L (no) | Mikromekanisk halvlederakselerometer | |
US8685776B2 (en) | Wafer level packaged MEMS device | |
US7247246B2 (en) | Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity | |
US5060039A (en) | Permanent magnet force rebalance micro accelerometer | |
US7104129B2 (en) | Vertically integrated MEMS structure with electronics in a hermetically sealed cavity | |
CA2034663C (en) | Method and apparatus for semiconductor chip transducer | |
US5000817A (en) | Batch method of making miniature structures assembled in wafer form | |
EP1803684A3 (en) | Vacuum packaged single crystal silicon resonator | |
US20070281381A1 (en) | Method for sealing and backside releasing of microelectromechanical systems | |
ATE511493T1 (de) | Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen | |
AU5874099A (en) | Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer | |
JP2013018114A (ja) | 直接転写による埋込み電極を有する構造体の製造方法およびこのようにして得られる構造体 | |
WO2002057180A3 (en) | Soi/glass process for forming thin silicon micromachined structures | |
WO2006019761A3 (en) | Mems device and interposer and method for integrating mems device and interposer | |
EP1369380A3 (de) | Mikrofluidisches Bauelement und Analysevorrichtung | |
CA2433738A1 (en) | Method for microfabricating structures using silicon-on-insulator material | |
US4732647A (en) | Batch method of making miniature capacitive force transducers assembled in wafer form | |
WO2011128446A2 (en) | Method for manufacturing a hermetically sealed structure | |
ATE227423T1 (de) | Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element | |
Tenerz et al. | Silicon microcavities fabricated with a new technique | |
KR950018695A (ko) | 단결정 규소를 이용한 미세기계구조물의 제조법 | |
JP2005134155A (ja) | 半導体加速度センサ | |
CN100446202C (zh) | 晶片级封装与制作上盖结构的方法 | |
KR100298810B1 (ko) | 진공 밀봉형 실리콘 각속도 센서의 제조방법 | |
JP2003270559A (ja) | マイクロデバイス及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |