ATE511493T1 - Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen - Google Patents

Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen

Info

Publication number
ATE511493T1
ATE511493T1 AT00939988T AT00939988T ATE511493T1 AT E511493 T1 ATE511493 T1 AT E511493T1 AT 00939988 T AT00939988 T AT 00939988T AT 00939988 T AT00939988 T AT 00939988T AT E511493 T1 ATE511493 T1 AT E511493T1
Authority
AT
Austria
Prior art keywords
reactive ion
ion etching
silicon
support substrate
insulating layer
Prior art date
Application number
AT00939988T
Other languages
English (en)
Inventor
Kenneth Hays
Eugene Witcomb
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of ATE511493T1 publication Critical patent/ATE511493T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
AT00939988T 1999-06-24 2000-06-22 Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen ATE511493T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/338,962 US6277666B1 (en) 1999-06-24 1999-06-24 Precisely defined microelectromechanical structures and associated fabrication methods
PCT/US2000/017130 WO2000078667A1 (en) 1999-06-24 2000-06-22 Precisely defined microelectromechanical structures and associated fabrication methods

Publications (1)

Publication Number Publication Date
ATE511493T1 true ATE511493T1 (de) 2011-06-15

Family

ID=23326883

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00939988T ATE511493T1 (de) 1999-06-24 2000-06-22 Verfahren zur herstellung von genauen mikroelektromechanischen strukturen, und so hergestellte mikrostrukturen

Country Status (5)

Country Link
US (1) US6277666B1 (de)
EP (1) EP1187789B1 (de)
JP (1) JP2003502165A (de)
AT (1) ATE511493T1 (de)
WO (1) WO2000078667A1 (de)

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US6573156B1 (en) 2001-12-13 2003-06-03 Omm, Inc. Low defect method for die singulation and for structural support for handling thin film devices
US6617686B2 (en) * 2002-02-08 2003-09-09 Robert B. Davies Semiconductor device and method of isolating circuit regions
US6875695B2 (en) * 2002-04-05 2005-04-05 Mems Optical Inc. System and method for analog replication of microdevices having a desired surface contour
AU2003272215B2 (en) * 2002-08-15 2009-09-10 The Charles Stark Draper Laboratory, Inc Method for microfabricating structures using silicon-on-insulator material
US6806557B2 (en) 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
US7224035B1 (en) * 2002-10-07 2007-05-29 Zyvex Corporation Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween
US20040065638A1 (en) * 2002-10-07 2004-04-08 Bishnu Gogoi Method of forming a sensor for detecting motion
US20040080447A1 (en) * 2002-10-17 2004-04-29 Bas Christophe F. Miniature omni-directional corner reflector
US6929974B2 (en) * 2002-10-18 2005-08-16 Motorola, Inc. Feedthrough design and method for a hermetically sealed microdevice
US6946644B2 (en) * 2002-12-19 2005-09-20 Honeywell International Inc. Sensor for multi-band radiation detection within a field of view
US7115893B1 (en) * 2002-12-19 2006-10-03 Honeywell International Inc. Chemical agent sensor having a stationary linear fringe interferometer
US6770504B2 (en) * 2003-01-06 2004-08-03 Honeywell International Inc. Methods and structure for improving wafer bow control
US6888233B2 (en) * 2003-03-10 2005-05-03 Honeywell International Inc. Systems for buried electrical feedthroughs in a glass-silicon MEMS process
US6867543B2 (en) * 2003-03-31 2005-03-15 Motorola, Inc. Microdevice assembly having a fine grain getter layer for maintaining vacuum
US6979872B2 (en) * 2003-05-13 2005-12-27 Rockwell Scientific Licensing, Llc Modules integrating MEMS devices with pre-processed electronic circuitry, and methods for fabricating such modules
US7045868B2 (en) * 2003-07-31 2006-05-16 Motorola, Inc. Wafer-level sealed microdevice having trench isolation and methods for making the same
US7065736B1 (en) 2003-09-24 2006-06-20 Sandia Corporation System for generating two-dimensional masks from a three-dimensional model using topological analysis
US7229669B2 (en) * 2003-11-13 2007-06-12 Honeywell International Inc. Thin-film deposition methods and apparatuses
AU2003297390A1 (en) * 2003-12-20 2005-08-03 Honeywell International Inc. Multi-band sensor
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US7691723B2 (en) * 2005-01-07 2010-04-06 Honeywell International Inc. Bonding system having stress control
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US7516661B2 (en) * 2006-02-23 2009-04-14 Honeywell International Inc. Z offset MEMS device
US7479402B2 (en) * 2006-03-20 2009-01-20 Honeywell International Inc. Comb structure fabrication methods and systems
US7469588B2 (en) * 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
KR100772441B1 (ko) * 2006-10-12 2007-11-01 삼성전기주식회사 임프린팅용 스탬퍼 제조방법
US7972828B2 (en) 2006-12-19 2011-07-05 Sigma-Aldrich Co. Stabilized compositions of thermostable DNA polymerase and anionic or zwitterionic detergent
US7563720B2 (en) * 2007-07-23 2009-07-21 Honeywell International Inc. Boron doped shell for MEMS device
US7690254B2 (en) * 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
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WO2017052646A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Island transfer for optical, piezo and rf applications
CN109883602B (zh) * 2019-03-13 2020-11-06 中国电子科技集团公司第四十九研究所 一种基于soi的自补偿硅微谐振式压力敏感芯片
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Also Published As

Publication number Publication date
JP2003502165A (ja) 2003-01-21
WO2000078667A1 (en) 2000-12-28
EP1187789A1 (de) 2002-03-20
EP1187789B1 (de) 2011-06-01
US6277666B1 (en) 2001-08-21

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