NL8203521A - Werkwijze voor het vervaardigen van een inrichting. - Google Patents
Werkwijze voor het vervaardigen van een inrichting. Download PDFInfo
- Publication number
- NL8203521A NL8203521A NL8203521A NL8203521A NL8203521A NL 8203521 A NL8203521 A NL 8203521A NL 8203521 A NL8203521 A NL 8203521A NL 8203521 A NL8203521 A NL 8203521A NL 8203521 A NL8203521 A NL 8203521A
- Authority
- NL
- Netherlands
- Prior art keywords
- irradiation
- lacquer layer
- lacquer
- radiation
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004922 lacquer Substances 0.000 claims description 85
- 230000005855 radiation Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000003518 caustics Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 claims description 3
- 125000000468 ketone group Chemical group 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8203521A NL8203521A (nl) | 1982-09-10 | 1982-09-10 | Werkwijze voor het vervaardigen van een inrichting. |
| US06/517,611 US4499177A (en) | 1982-09-10 | 1983-07-27 | Method of manufacturing a semiconductor device |
| DE8383201285T DE3365143D1 (en) | 1982-09-10 | 1983-09-06 | Method of manufacturing a semiconductor device |
| EP83201285A EP0103337B1 (en) | 1982-09-10 | 1983-09-06 | Method of manufacturing a semiconductor device |
| JP58164282A JPS5965432A (ja) | 1982-09-10 | 1983-09-08 | 半導体デバイスの製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8203521A NL8203521A (nl) | 1982-09-10 | 1982-09-10 | Werkwijze voor het vervaardigen van een inrichting. |
| NL8203521 | 1982-09-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8203521A true NL8203521A (nl) | 1984-04-02 |
Family
ID=19840255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8203521A NL8203521A (nl) | 1982-09-10 | 1982-09-10 | Werkwijze voor het vervaardigen van een inrichting. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4499177A (enExample) |
| EP (1) | EP0103337B1 (enExample) |
| JP (1) | JPS5965432A (enExample) |
| DE (1) | DE3365143D1 (enExample) |
| NL (1) | NL8203521A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4609615A (en) * | 1983-03-31 | 1986-09-02 | Oki Electric Industry Co., Ltd. | Process for forming pattern with negative resist using quinone diazide compound |
| WO1986001313A1 (en) * | 1984-08-13 | 1986-02-27 | Ncr Corporation | Process for forming a layer of patterned photoresist |
| US4859573A (en) * | 1984-08-13 | 1989-08-22 | Ncr Corporation | Multiple photoresist layer process using selective hardening |
| EP0195106B1 (de) * | 1985-03-22 | 1989-06-21 | Ibm Deutschland Gmbh | Herstellung einer Abhebemaske und ihre Anwendung |
| DE3524411A1 (de) * | 1985-07-09 | 1987-01-15 | Kernforschungsz Karlsruhe | Verfahren zum herstellen von spinnduesenplatten |
| ZA872295B (enExample) * | 1986-03-13 | 1987-09-22 | ||
| WO1988007705A1 (en) * | 1987-03-27 | 1988-10-06 | Horsell Graphic Industries Limited | Processing of exposed lithographic printing plates |
| NL8601096A (nl) * | 1986-04-29 | 1987-11-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleidersubstraat een negatief beeld wordt gevormd in een positieve fotolak. |
| JPH07113773B2 (ja) * | 1986-07-04 | 1995-12-06 | 株式会社日立製作所 | パタ−ン形成方法 |
| JP2653072B2 (ja) * | 1987-12-07 | 1997-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| US4826754A (en) * | 1987-04-27 | 1989-05-02 | Microelectronics Center Of North Carolina | Method for anisotropically hardening a protective coating for integrated circuit manufacture |
| US5064748A (en) * | 1987-04-27 | 1991-11-12 | Mcnc | Method for anisotropically hardening a protective coating for integrated circuit manufacture |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
| US4212935A (en) * | 1978-02-24 | 1980-07-15 | International Business Machines Corporation | Method of modifying the development profile of photoresists |
| JPS5655044A (en) * | 1979-10-11 | 1981-05-15 | Fujitsu Ltd | Formation of resist pattern |
| NL8001561A (nl) * | 1980-03-17 | 1981-10-16 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting met behulp van een maskerpatroon. |
| DE3028308A1 (de) * | 1980-07-25 | 1982-02-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen von reliefstrukturen aus strahlungsempfindlichen lacken auf einem substrat, insbesondere fuer die herstellung von integrierten halbleiterschaltungen |
| GB2082339B (en) * | 1980-08-05 | 1985-06-12 | Horsell Graphic Ind Ltd | Lithographic printing plates and method for processing |
-
1982
- 1982-09-10 NL NL8203521A patent/NL8203521A/nl not_active Application Discontinuation
-
1983
- 1983-07-27 US US06/517,611 patent/US4499177A/en not_active Expired - Lifetime
- 1983-09-06 DE DE8383201285T patent/DE3365143D1/de not_active Expired
- 1983-09-06 EP EP83201285A patent/EP0103337B1/en not_active Expired
- 1983-09-08 JP JP58164282A patent/JPS5965432A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0103337A1 (en) | 1984-03-21 |
| DE3365143D1 (en) | 1986-09-11 |
| JPH0452937B2 (enExample) | 1992-08-25 |
| EP0103337B1 (en) | 1986-08-06 |
| JPS5965432A (ja) | 1984-04-13 |
| US4499177A (en) | 1985-02-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |