JPH0452937B2 - - Google Patents

Info

Publication number
JPH0452937B2
JPH0452937B2 JP58164282A JP16428283A JPH0452937B2 JP H0452937 B2 JPH0452937 B2 JP H0452937B2 JP 58164282 A JP58164282 A JP 58164282A JP 16428283 A JP16428283 A JP 16428283A JP H0452937 B2 JPH0452937 B2 JP H0452937B2
Authority
JP
Japan
Prior art keywords
irradiation
lacquer layer
manufacturing
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58164282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5965432A (ja
Inventor
Antoniusu Fuorenburotsuku Furanshisukasu
Yakoba Supierutsu Erizabesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5965432A publication Critical patent/JPS5965432A/ja
Publication of JPH0452937B2 publication Critical patent/JPH0452937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP58164282A 1982-09-10 1983-09-08 半導体デバイスの製造方法 Granted JPS5965432A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8203521A NL8203521A (nl) 1982-09-10 1982-09-10 Werkwijze voor het vervaardigen van een inrichting.
NL8203521 1982-09-10

Publications (2)

Publication Number Publication Date
JPS5965432A JPS5965432A (ja) 1984-04-13
JPH0452937B2 true JPH0452937B2 (enExample) 1992-08-25

Family

ID=19840255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58164282A Granted JPS5965432A (ja) 1982-09-10 1983-09-08 半導体デバイスの製造方法

Country Status (5)

Country Link
US (1) US4499177A (enExample)
EP (1) EP0103337B1 (enExample)
JP (1) JPS5965432A (enExample)
DE (1) DE3365143D1 (enExample)
NL (1) NL8203521A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609615A (en) * 1983-03-31 1986-09-02 Oki Electric Industry Co., Ltd. Process for forming pattern with negative resist using quinone diazide compound
WO1986001313A1 (en) * 1984-08-13 1986-02-27 Ncr Corporation Process for forming a layer of patterned photoresist
US4859573A (en) * 1984-08-13 1989-08-22 Ncr Corporation Multiple photoresist layer process using selective hardening
EP0195106B1 (de) * 1985-03-22 1989-06-21 Ibm Deutschland Gmbh Herstellung einer Abhebemaske und ihre Anwendung
DE3524411A1 (de) * 1985-07-09 1987-01-15 Kernforschungsz Karlsruhe Verfahren zum herstellen von spinnduesenplatten
ZA872295B (enExample) * 1986-03-13 1987-09-22
WO1988007705A1 (en) * 1987-03-27 1988-10-06 Horsell Graphic Industries Limited Processing of exposed lithographic printing plates
NL8601096A (nl) * 1986-04-29 1987-11-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleidersubstraat een negatief beeld wordt gevormd in een positieve fotolak.
JPH07113773B2 (ja) * 1986-07-04 1995-12-06 株式会社日立製作所 パタ−ン形成方法
JP2653072B2 (ja) * 1987-12-07 1997-09-10 松下電器産業株式会社 パターン形成方法
US4826754A (en) * 1987-04-27 1989-05-02 Microelectronics Center Of North Carolina Method for anisotropically hardening a protective coating for integrated circuit manufacture
US5064748A (en) * 1987-04-27 1991-11-12 Mcnc Method for anisotropically hardening a protective coating for integrated circuit manufacture

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
JPS5655044A (en) * 1979-10-11 1981-05-15 Fujitsu Ltd Formation of resist pattern
NL8001561A (nl) * 1980-03-17 1981-10-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting met behulp van een maskerpatroon.
DE3028308A1 (de) * 1980-07-25 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von reliefstrukturen aus strahlungsempfindlichen lacken auf einem substrat, insbesondere fuer die herstellung von integrierten halbleiterschaltungen
GB2082339B (en) * 1980-08-05 1985-06-12 Horsell Graphic Ind Ltd Lithographic printing plates and method for processing

Also Published As

Publication number Publication date
EP0103337A1 (en) 1984-03-21
DE3365143D1 (en) 1986-09-11
EP0103337B1 (en) 1986-08-06
NL8203521A (nl) 1984-04-02
JPS5965432A (ja) 1984-04-13
US4499177A (en) 1985-02-12

Similar Documents

Publication Publication Date Title
JPS60195934A (ja) レジスト・パタ−ンの形成方法
JP2000292929A (ja) フォトリソグラフィック構造体の製造法
JPH05127369A (ja) レジスト材料
US4499177A (en) Method of manufacturing a semiconductor device
JPS63253356A (ja) 半導体装置の製造方法
JP4836363B2 (ja) レジストパターンの形成方法
EP0178654A2 (en) Method of manufacturing a semiconductor device comprising a method of patterning an organic material
JPH0757995A (ja) レジストパターン形成方法
EP1353226A2 (en) Method for manufacturing resist pattern
JP3421268B2 (ja) パターン形成法
JP2551117B2 (ja) レジストパターン形成方法
JPH0458170B2 (enExample)
JP3366865B2 (ja) パターン形成法
JPS63237418A (ja) レジストハ−ドニング方法
JPH0128374B2 (enExample)
JPH0750240A (ja) 半導体装置の製造方法
JP3185933B2 (ja) 加工用レジスト層形成法
JP2000347406A (ja) レジストパターン形成方法及び半導体装置の製造方法
JP2002093683A (ja) パターン形成方法及び半導体装置の製造方法
JPH05152200A (ja) レジストパターン形成方法
KR100244765B1 (ko) 반도체 소자의 미세 패턴 방법
JPH0550845B2 (enExample)
JPH08181132A (ja) ポジ型パタン形成方法
JPH05291103A (ja) レジストパターン形成方法
JPS5984427A (ja) パタ−ン形成方法