NL8102402A - Werkwijze voor de eindpuntdetectie bij een fysisch etsproces. - Google Patents
Werkwijze voor de eindpuntdetectie bij een fysisch etsproces. Download PDFInfo
- Publication number
- NL8102402A NL8102402A NL8102402A NL8102402A NL8102402A NL 8102402 A NL8102402 A NL 8102402A NL 8102402 A NL8102402 A NL 8102402A NL 8102402 A NL8102402 A NL 8102402A NL 8102402 A NL8102402 A NL 8102402A
- Authority
- NL
- Netherlands
- Prior art keywords
- current
- etching
- changes
- measured
- semiconductor wafer
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 43
- 230000008569 process Effects 0.000 title claims description 15
- 238000001514 detection method Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 230000001419 dependent effect Effects 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 238000010884 ion-beam technique Methods 0.000 description 24
- 150000002500 ions Chemical class 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 12
- 230000007704 transition Effects 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 230000035515 penetration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000010891 toxic waste Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001595 flow curve Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003380 quartz crystal microbalance Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000009293 tertiary effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/20—Investigating the presence of flaws
- G01N27/205—Investigating the presence of flaws in insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Biochemistry (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15053380 | 1980-05-16 | ||
| US06/150,533 US4358338A (en) | 1980-05-16 | 1980-05-16 | End point detection method for physical etching process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8102402A true NL8102402A (nl) | 1981-12-16 |
Family
ID=22534978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8102402A NL8102402A (nl) | 1980-05-16 | 1981-05-15 | Werkwijze voor de eindpuntdetectie bij een fysisch etsproces. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4358338A (de) |
| JP (1) | JPS579877A (de) |
| CH (1) | CH652237A5 (de) |
| DE (1) | DE3118834A1 (de) |
| FR (1) | FR2482783A1 (de) |
| GB (1) | GB2076330B (de) |
| NL (1) | NL8102402A (de) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2123331B (en) * | 1982-04-29 | 1985-11-27 | Christopher David Dobson | Plasma treatment apparatus and method |
| US4496448A (en) * | 1983-10-13 | 1985-01-29 | At&T Bell Laboratories | Method for fabricating devices with DC bias-controlled reactive ion etching |
| US4564585A (en) * | 1983-11-28 | 1986-01-14 | Magnetic Peripherals, Inc. | Process for fabricating negative pressure sliders |
| GB2150317A (en) * | 1983-11-28 | 1985-06-26 | Magnetic Peripherals Inc | Process for producing negative pressure sliders using a photoresist |
| JPS60129181A (ja) * | 1983-12-16 | 1985-07-10 | Matsubishi Kinzoku Kogyo Kk | 廃水浄化装置 |
| JPS60243960A (ja) * | 1984-05-18 | 1985-12-03 | Hitachi Ltd | イオンマイクロビ−ム装置 |
| JP2539359B2 (ja) * | 1985-03-27 | 1996-10-02 | 株式会社日立製作所 | 半導体装置へのイオンビ−ム加工方法およびその装置 |
| US4602981A (en) * | 1985-05-06 | 1986-07-29 | International Business Machines Corporation | Monitoring technique for plasma etching |
| JPH0451474Y2 (de) * | 1986-05-15 | 1992-12-03 | ||
| US4767496A (en) * | 1986-12-11 | 1988-08-30 | Siemens Aktiengesellschaft | Method for controlling and supervising etching processes |
| CH669609A5 (de) * | 1986-12-23 | 1989-03-31 | Balzers Hochvakuum | |
| US4810335A (en) * | 1987-01-20 | 1989-03-07 | Siemens Aktiengesellschaft | Method for monitoring etching processes |
| US5169407A (en) * | 1987-03-31 | 1992-12-08 | Kabushiki Kaisha Toshiba | Method of determining end of cleaning of semiconductor manufacturing apparatus |
| JPH0630351B2 (ja) * | 1987-03-31 | 1994-04-20 | 株式会社東芝 | 半導体製造装置のクリ−ニング終点判定方法 |
| US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
| US4879258A (en) * | 1988-08-31 | 1989-11-07 | Texas Instruments Incorporated | Integrated circuit planarization by mechanical polishing |
| US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| US4902631A (en) * | 1988-10-28 | 1990-02-20 | At&T Bell Laboratories | Monitoring the fabrication of semiconductor devices by photon induced electron emission |
| US4980018A (en) * | 1989-11-14 | 1990-12-25 | Intel Corporation | Plasma etching process for refractory metal vias |
| US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
| US5069002A (en) * | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
| US5245794A (en) * | 1992-04-09 | 1993-09-21 | Advanced Micro Devices, Inc. | Audio end point detector for chemical-mechanical polishing and method therefor |
| KR940009496B1 (ko) * | 1992-06-09 | 1994-10-14 | 주식회사금성사 | 다색 전계발광소자 및 제조방법 |
| EP0616362A3 (de) * | 1993-03-15 | 1995-06-21 | Tokyo Shibaura Electric Co | Verfahren zum Polieren von Werkstücken und Vorrichtung dafür. |
| US5793195A (en) * | 1995-08-30 | 1998-08-11 | Kaufman & Robinson, Inc. | Angular distribution probe |
| US5655951A (en) * | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
| US5609718A (en) * | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
| US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
| US5777739A (en) * | 1996-02-16 | 1998-07-07 | Micron Technology, Inc. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers |
| KR0179281B1 (ko) * | 1996-02-28 | 1999-10-01 | 문정환 | 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법 |
| US6022807A (en) * | 1996-04-24 | 2000-02-08 | Micro Processing Technology, Inc. | Method for fabricating an integrated circuit |
| US6007408A (en) * | 1997-08-21 | 1999-12-28 | Micron Technology, Inc. | Method and apparatus for endpointing mechanical and chemical-mechanical polishing of substrates |
| US6127237A (en) * | 1998-03-04 | 2000-10-03 | Kabushiki Kaisha Toshiba | Etching end point detecting method based on junction current measurement and etching apparatus |
| JPH11354509A (ja) | 1998-04-07 | 1999-12-24 | Seiko Epson Corp | プラズマエッチングの終点検出方法及びプラズマエッチング装置 |
| JP2000031072A (ja) * | 1998-07-10 | 2000-01-28 | Seiko Epson Corp | プラズマモニタ方法及び半導体製造装置 |
| US6287977B1 (en) * | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
| US6046111A (en) * | 1998-09-02 | 2000-04-04 | Micron Technology, Inc. | Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates |
| US6517669B2 (en) * | 1999-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus and method of detecting endpoint of a dielectric etch |
| US6707540B1 (en) | 1999-12-23 | 2004-03-16 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current and optical measurements |
| US6433541B1 (en) | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
| US6340326B1 (en) | 2000-01-28 | 2002-01-22 | Lam Research Corporation | System and method for controlled polishing and planarization of semiconductor wafers |
| US6705930B2 (en) | 2000-01-28 | 2004-03-16 | Lam Research Corporation | System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques |
| US6290572B1 (en) | 2000-03-23 | 2001-09-18 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US6428386B1 (en) | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US6585572B1 (en) | 2000-08-22 | 2003-07-01 | Lam Research Corporation | Subaperture chemical mechanical polishing system |
| US6640155B2 (en) | 2000-08-22 | 2003-10-28 | Lam Research Corporation | Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head |
| US7481695B2 (en) | 2000-08-22 | 2009-01-27 | Lam Research Corporation | Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head |
| US6652357B1 (en) | 2000-09-22 | 2003-11-25 | Lam Research Corporation | Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing |
| US6447369B1 (en) | 2000-08-30 | 2002-09-10 | Micron Technology, Inc. | Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates |
| US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
| US6471566B1 (en) | 2000-09-18 | 2002-10-29 | Lam Research Corporation | Sacrificial retaining ring CMP system and methods for implementing the same |
| US6443815B1 (en) | 2000-09-22 | 2002-09-03 | Lam Research Corporation | Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing |
| JP3807295B2 (ja) * | 2001-11-30 | 2006-08-09 | ソニー株式会社 | 研磨方法 |
| US7341502B2 (en) | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
| US7415400B2 (en) * | 2002-10-15 | 2008-08-19 | Livermore Software Technology Corporation | System, method, and device for designing a die to stamp metal parts to an exact final dimension |
| US7494596B2 (en) * | 2003-03-21 | 2009-02-24 | Hewlett-Packard Development Company, L.P. | Measurement of etching |
| KR20040094560A (ko) * | 2003-05-03 | 2004-11-10 | 삼성전자주식회사 | 반도체 소자 금속배선층의 전해 연마 방법 및 장치 |
| US7662648B2 (en) | 2005-08-31 | 2010-02-16 | Micron Technology, Inc. | Integrated circuit inspection system |
| EP3914897A4 (de) * | 2019-01-22 | 2022-11-02 | Techinsights Inc. | Ionenstrahlentschichtungssystem und -verfahren und endpunktüberwachungssystem und -verfahren dafür |
| US11158786B2 (en) | 2019-09-25 | 2021-10-26 | International Business Machines Corporation | MRAM device formation with controlled ion beam etch of MTJ |
| CN116759299A (zh) * | 2023-06-16 | 2023-09-15 | 上海传芯半导体有限公司 | 掩模版的制备方法、干法刻蚀设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258476A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Method and device for etching |
| DE2603675A1 (de) * | 1976-01-31 | 1977-08-04 | Leybold Heraeus Gmbh & Co Kg | Verfahren zur kontrolle des abtragens einer duennen schicht oder durch masken bestimmter schichtbereiche mit hilfe des ionen-aetzens |
| DE2651187A1 (de) * | 1976-11-10 | 1978-05-18 | Kuhlmann Schaefer Wilhelm | Verfahren und vorrichtung zum abtragen von schichten |
| JPS5914548B2 (ja) * | 1977-04-30 | 1984-04-05 | 富士通株式会社 | イオンエツチング法 |
| JPS5562169A (en) * | 1978-11-01 | 1980-05-10 | Toshiba Corp | Ion-etching method |
-
1980
- 1980-05-16 US US06/150,533 patent/US4358338A/en not_active Expired - Lifetime
-
1981
- 1981-05-07 GB GB8113958A patent/GB2076330B/en not_active Expired
- 1981-05-12 DE DE19813118834 patent/DE3118834A1/de not_active Withdrawn
- 1981-05-13 FR FR8109507A patent/FR2482783A1/fr active Pending
- 1981-05-13 JP JP7086581A patent/JPS579877A/ja active Pending
- 1981-05-15 NL NL8102402A patent/NL8102402A/nl not_active Application Discontinuation
- 1981-05-15 CH CH3196/81A patent/CH652237A5/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2076330B (en) | 1984-09-26 |
| JPS579877A (en) | 1982-01-19 |
| US4358338A (en) | 1982-11-09 |
| DE3118834A1 (de) | 1982-01-28 |
| CH652237A5 (de) | 1985-10-31 |
| FR2482783A1 (fr) | 1981-11-20 |
| GB2076330A (en) | 1981-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |