NL8100227A - Werkwijze voor de vervaardiging van zeer zuivere monokristallen door het trekken uit een kroes volgens czochralski. - Google Patents

Werkwijze voor de vervaardiging van zeer zuivere monokristallen door het trekken uit een kroes volgens czochralski. Download PDF

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Publication number
NL8100227A
NL8100227A NL8100227A NL8100227A NL8100227A NL 8100227 A NL8100227 A NL 8100227A NL 8100227 A NL8100227 A NL 8100227A NL 8100227 A NL8100227 A NL 8100227A NL 8100227 A NL8100227 A NL 8100227A
Authority
NL
Netherlands
Prior art keywords
crucible
melt
pulling
czochralski
radiation shield
Prior art date
Application number
NL8100227A
Other languages
English (en)
Dutch (nl)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of NL8100227A publication Critical patent/NL8100227A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL8100227A 1980-02-14 1981-01-19 Werkwijze voor de vervaardiging van zeer zuivere monokristallen door het trekken uit een kroes volgens czochralski. NL8100227A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3005492A DE3005492C2 (de) 1980-02-14 1980-02-14 Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
DE3005492 1980-02-14

Publications (1)

Publication Number Publication Date
NL8100227A true NL8100227A (nl) 1981-09-16

Family

ID=6094582

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8100227A NL8100227A (nl) 1980-02-14 1981-01-19 Werkwijze voor de vervaardiging van zeer zuivere monokristallen door het trekken uit een kroes volgens czochralski.

Country Status (5)

Country Link
US (1) US4330361A (ja)
JP (1) JPS581080B2 (ja)
DE (1) DE3005492C2 (ja)
IT (1) IT1170715B (ja)
NL (1) NL8100227A (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
JPH028954Y2 (ja) * 1985-01-30 1990-03-05
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
CA1306407C (en) * 1987-06-08 1992-08-18 Michio Kida Apparatus for growing crystals of semiconductor materials
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JP2670548B2 (ja) * 1990-04-27 1997-10-29 東芝セラミックス株式会社 シリコン単結晶の製造装置
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
US5242667A (en) * 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
JP2720262B2 (ja) * 1992-10-26 1998-03-04 科学技術振興事業団 単結晶引上げ装置
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
US5443034A (en) * 1994-08-17 1995-08-22 Solec International, Inc. Method and apparatus for increasing silicon ingot growth rate
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
JPH09165291A (ja) * 1995-12-14 1997-06-24 Komatsu Electron Metals Co Ltd 単結晶製造方法およびその装置
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5824152A (en) * 1996-07-09 1998-10-20 Komatsu Electronic Metals Co., Ltd. Semiconductor single-crystal pulling apparatus
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
JP2001240492A (ja) * 2000-02-29 2001-09-04 Komatsu Electronic Metals Co Ltd リチャージ・追いチャージを円滑に行うｃｚ法単結晶引上げ装置
JP4718661B2 (ja) * 2000-02-29 2011-07-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン種結晶の転位排除方法
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
US9281438B2 (en) * 2007-09-28 2016-03-08 Ricoh Company, Ltd. Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal
DE102016002553B4 (de) 2016-03-04 2018-12-06 Krasimir Kosev Einkristallzüchtungsvorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL103477C (ja) * 1956-11-28
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
DE1769860A1 (de) * 1968-07-26 1971-11-11 Siemens Ag Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben
NL6917398A (ja) * 1969-03-18 1970-09-22
DD136003A1 (de) * 1978-02-15 1979-06-13 Hellmut Heckert Verfahren und vorrichtung zur herstellung einkristalliner koerper
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze

Also Published As

Publication number Publication date
IT1170715B (it) 1987-06-03
JPS56114895A (en) 1981-09-09
IT8147789A0 (it) 1981-02-13
JPS581080B2 (ja) 1983-01-10
US4330361A (en) 1982-05-18
DE3005492A1 (de) 1981-08-20
DE3005492C2 (de) 1983-10-27

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed