NL2022617B1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
NL2022617B1
NL2022617B1 NL2022617A NL2022617A NL2022617B1 NL 2022617 B1 NL2022617 B1 NL 2022617B1 NL 2022617 A NL2022617 A NL 2022617A NL 2022617 A NL2022617 A NL 2022617A NL 2022617 B1 NL2022617 B1 NL 2022617B1
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NL
Netherlands
Prior art keywords
semiconductor chip
solder material
grooves
semiconductor device
lead
Prior art date
Application number
NL2022617A
Other languages
English (en)
Dutch (nl)
Other versions
NL2022617A (en
Inventor
Nakagawa Masao
Kuwano Ryoji
Shinotake Yohei
Original Assignee
Shindengen Electric Mfg
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Publication date
Application filed by Shindengen Electric Mfg filed Critical Shindengen Electric Mfg
Publication of NL2022617A publication Critical patent/NL2022617A/en
Application granted granted Critical
Publication of NL2022617B1 publication Critical patent/NL2022617B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
NL2022617A 2018-03-01 2019-02-21 Semiconductor device NL2022617B1 (en)

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JP2021090012A (ja) * 2019-12-05 2021-06-10 新光電気工業株式会社 銅ピラーバンプ、半導体チップ、半導体装置
JP2023045874A (ja) 2021-09-22 2023-04-03 株式会社東芝 半導体装置

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JPS5525391U (zh) * 1978-08-08 1980-02-19
JPH0218955A (ja) * 1988-07-07 1990-01-23 Mitsui High Tec Inc 半導体装置用リードフレーム
JPH04199557A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp 半導体装置用リードフレーム
JPH1167963A (ja) * 1997-08-26 1999-03-09 Matsushita Electric Works Ltd 半導体装置
JP3215686B2 (ja) * 1999-08-25 2001-10-09 株式会社日立製作所 半導体装置及びその製造方法
JP4281050B2 (ja) * 2003-03-31 2009-06-17 株式会社デンソー 半導体装置
JP5533619B2 (ja) 2010-12-14 2014-06-25 株式会社デンソー 半導体装置
JP5789431B2 (ja) * 2011-06-30 2015-10-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102014104819A1 (de) * 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und/oder Clip für Halbleiterelemente, Halbleiterbauelement und Verfahren zur Herstellung
JP6318064B2 (ja) * 2014-09-25 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6305302B2 (ja) * 2014-10-02 2018-04-04 三菱電機株式会社 半導体装置およびその製造方法
JP6309112B2 (ja) * 2014-12-29 2018-04-11 三菱電機株式会社 パワーモジュール
US9496208B1 (en) * 2016-02-25 2016-11-15 Texas Instruments Incorporated Semiconductor device having compliant and crack-arresting interconnect structure
JP6697944B2 (ja) 2016-04-27 2020-05-27 三菱電機株式会社 電力用半導体装置

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