NL192156B - Voorlaadketen voor gebruik in een halfgeleidegeheugeneenheid. - Google Patents

Voorlaadketen voor gebruik in een halfgeleidegeheugeneenheid.

Info

Publication number
NL192156B
NL192156B NL8801634A NL8801634A NL192156B NL 192156 B NL192156 B NL 192156B NL 8801634 A NL8801634 A NL 8801634A NL 8801634 A NL8801634 A NL 8801634A NL 192156 B NL192156 B NL 192156B
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
memory unit
precharge circuit
precharge
circuit
Prior art date
Application number
NL8801634A
Other languages
English (en)
Other versions
NL192156C (nl
NL8801634A (nl
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL8801634A publication Critical patent/NL8801634A/nl
Publication of NL192156B publication Critical patent/NL192156B/nl
Application granted granted Critical
Publication of NL192156C publication Critical patent/NL192156C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
NL8801634A 1987-06-27 1988-06-27 Voorlaadketen voor gebruik in een halfgeleidegeheugeneenheid. NL192156C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR870006581 1987-06-27
KR1019870006581A KR900004635B1 (ko) 1987-06-27 1987-06-27 반도체 메모리장치의 충전 및 등화회로

Publications (3)

Publication Number Publication Date
NL8801634A NL8801634A (nl) 1989-01-16
NL192156B true NL192156B (nl) 1996-10-01
NL192156C NL192156C (nl) 1997-02-04

Family

ID=19262408

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8801634A NL192156C (nl) 1987-06-27 1988-06-27 Voorlaadketen voor gebruik in een halfgeleidegeheugeneenheid.

Country Status (4)

Country Link
US (1) US4852064A (nl)
JP (1) JPS6452282A (nl)
KR (1) KR900004635B1 (nl)
NL (1) NL192156C (nl)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211394A (ja) * 1988-02-19 1989-08-24 Sony Corp メモリ装置
JPH0762955B2 (ja) * 1989-05-15 1995-07-05 株式会社東芝 ダイナミック型ランダムアクセスメモリ
US5239237A (en) * 1990-02-14 1993-08-24 Zilog, Inc. Control circuit having outputs with differing rise and fall times
US5187686A (en) * 1990-02-14 1993-02-16 Zilog, Inc. Control circuit having outputs with differing rise and fall times
JPH03278396A (ja) * 1990-03-27 1991-12-10 Nec Corp 半導体記憶装置
KR920010345B1 (ko) * 1990-06-30 1992-11-27 삼성전자 주식회사 선충전수단을 구비한 라이트 드라이버(write driver)
KR940008296B1 (ko) * 1991-06-19 1994-09-10 삼성전자 주식회사 고속 센싱동작을 수행하는 센스앰프
JPH0660665A (ja) * 1992-08-10 1994-03-04 Nec Corp 半導体スタティックｒａｍのビット線負荷回路
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
US6631093B2 (en) * 2001-06-29 2003-10-07 Intel Corporation Low power precharge scheme for memory bit lines
DE102005025149B4 (de) 2005-06-01 2011-08-18 Infineon Technologies AG, 81669 Einrichtung zur Verwendung beim Auslesen einer Speicherzelle, und Verfahren zum Auslesen einer Speicherzelle
US8064271B2 (en) * 2005-09-28 2011-11-22 Texas Instruments Incorporated Static random access memory device having bit line voltage control for retain till accessed mode and method of operating the same
EP1966803A2 (en) * 2005-12-29 2008-09-10 SanDisk Corporation Non-volatile memory operated on the basis of a two-step bit-line precharge operation and a two-pass sensing operation
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7733704B2 (en) 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US7936624B2 (en) * 2006-12-30 2011-05-03 Texas Instruments Incorporated Reduced power bitline precharge scheme for low power applications in memory devices
JP2009043357A (ja) * 2007-08-10 2009-02-26 Toshiba Corp 半導体記憶装置
KR101475346B1 (ko) * 2008-07-02 2014-12-23 삼성전자주식회사 비트라인 쌍의 디벨롭 레벨을 클립핑하는 디벨롭 레벨클리핑 회로, 이를 포함하는 컬럼 경로 회로 및 멀티 포트반도체 메모리 장치
JP2011138569A (ja) * 2009-12-25 2011-07-14 Toshiba Corp 不揮発性半導体記憶装置
US8605526B2 (en) * 2011-05-31 2013-12-10 Infineon Technologies Ag Memory reliability verification techniques
US9842631B2 (en) * 2012-12-14 2017-12-12 Nvidia Corporation Mitigating external influences on long signal lines
US9922701B2 (en) * 2016-08-08 2018-03-20 Taiwan Semiconductor Manufacturing Company Limited Pre-charging bit lines through charge-sharing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851354B2 (ja) * 1980-10-15 1983-11-16 富士通株式会社 半導体記憶装置
JPS61190787A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd スタテイツク型ｒａｍ
JPS629590A (ja) * 1985-07-08 1987-01-17 Nec Corp 増幅回路

Also Published As

Publication number Publication date
US4852064A (en) 1989-07-25
NL192156C (nl) 1997-02-04
JPS6452282A (en) 1989-02-28
KR890001093A (ko) 1989-03-18
NL8801634A (nl) 1989-01-16
KR900004635B1 (ko) 1990-06-30

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
CNR Transfer of rights (patent application after its laying open for public inspection)

Free format text: SAMSUNG ELECTRONICS CO., LTD.

BB A search report has been drawn up
BC A request for examination has been filed
BK Erratum

Free format text: PAT.BUL.04/97,HEADING P,SECTION 2,PAGE 497:IN THE TITLE OF THE INVENTION THE WORD HALFGELEIDEGEHEUGENEENHEID SHOULD BE MODIFIED INTO: HALFGELEIDERGEHEUGENEENHEID

V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20080627