NL188721C - Halfgeleidergeheugenschakeling voor een statisch geheugen. - Google Patents

Halfgeleidergeheugenschakeling voor een statisch geheugen.

Info

Publication number
NL188721C
NL188721C NLAANVRAGE7812463,A NL7812463A NL188721C NL 188721 C NL188721 C NL 188721C NL 7812463 A NL7812463 A NL 7812463A NL 188721 C NL188721 C NL 188721C
Authority
NL
Netherlands
Prior art keywords
memory
static
circuit
semiconductor memory
semiconductor
Prior art date
Application number
NLAANVRAGE7812463,A
Other languages
English (en)
Dutch (nl)
Other versions
NL188721B (nl
NL7812463A (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7812463,A priority Critical patent/NL188721C/xx
Priority to FR7924263A priority patent/FR2444992A1/fr
Priority to DE2950906A priority patent/DE2950906C2/de
Priority to IT28197/79A priority patent/IT1193349B/it
Priority to JP54165466A priority patent/JPS5840341B2/ja
Priority to US06/105,357 priority patent/US4322821A/en
Priority to GB7943741A priority patent/GB2038091B/en
Priority to SE7910457A priority patent/SE438569B/sv
Priority to CA000342353A priority patent/CA1152646A/en
Priority to AU54040/79A priority patent/AU530153B2/en
Publication of NL7812463A publication Critical patent/NL7812463A/nl
Publication of NL188721B publication Critical patent/NL188721B/xx
Application granted granted Critical
Publication of NL188721C publication Critical patent/NL188721C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
NLAANVRAGE7812463,A 1978-12-22 1978-12-22 Halfgeleidergeheugenschakeling voor een statisch geheugen. NL188721C (nl)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NLAANVRAGE7812463,A NL188721C (nl) 1978-12-22 1978-12-22 Halfgeleidergeheugenschakeling voor een statisch geheugen.
FR7924263A FR2444992A1 (fr) 1978-12-22 1979-09-28 Cellule de memoire pour une memoire statique et memoire statique comportant une telle cellule
DE2950906A DE2950906C2 (de) 1978-12-22 1979-12-18 Speicherzelle für einen statischen Halbleiterspeicher und aus solchen Speicherzellen aufgebauter Halbleiterspeicher
JP54165466A JPS5840341B2 (ja) 1978-12-22 1979-12-19 半導体デバイス
IT28197/79A IT1193349B (it) 1978-12-22 1979-12-19 Cella di memorizzazione per una memoria statica e memoria statica comprendente tale cella
US06/105,357 US4322821A (en) 1978-12-22 1979-12-19 Memory cell for a static memory and static memory comprising such a cell
GB7943741A GB2038091B (en) 1978-12-22 1979-12-19 Memory cell with a diode comprising polycrystalline silicon
SE7910457A SE438569B (sv) 1978-12-22 1979-12-19 Halvledaranordning innefattande en minnescell med tva transistorer, der belastningselementet innefattar en pn-diod
CA000342353A CA1152646A (en) 1978-12-22 1979-12-20 Memory cell for a static memory and static memory comprising such a cell
AU54040/79A AU530153B2 (en) 1978-12-22 1979-12-20 Memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7812463 1978-12-22
NLAANVRAGE7812463,A NL188721C (nl) 1978-12-22 1978-12-22 Halfgeleidergeheugenschakeling voor een statisch geheugen.

Publications (3)

Publication Number Publication Date
NL7812463A NL7812463A (nl) 1980-06-24
NL188721B NL188721B (nl) 1992-04-01
NL188721C true NL188721C (nl) 1992-09-01

Family

ID=19832117

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7812463,A NL188721C (nl) 1978-12-22 1978-12-22 Halfgeleidergeheugenschakeling voor een statisch geheugen.

Country Status (10)

Country Link
US (1) US4322821A (de)
JP (1) JPS5840341B2 (de)
AU (1) AU530153B2 (de)
CA (1) CA1152646A (de)
DE (1) DE2950906C2 (de)
FR (1) FR2444992A1 (de)
GB (1) GB2038091B (de)
IT (1) IT1193349B (de)
NL (1) NL188721C (de)
SE (1) SE438569B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622575A (en) * 1981-10-27 1986-11-11 Fairchild Semiconductor Corporation Integrated circuit bipolar memory cell
US4488350A (en) * 1981-10-27 1984-12-18 Fairchild Camera & Instrument Corp. Method of making an integrated circuit bipolar memory cell
US4624863A (en) * 1982-05-20 1986-11-25 Fairchild Semiconductor Corporation Method of fabricating Schottky diodes and electrical interconnections in semiconductor structures
US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
US4551070A (en) * 1983-12-23 1985-11-05 The Nash Engineering Company Noise control for conically ported liquid ring pumps
US4737836A (en) * 1983-12-30 1988-04-12 International Business Machines Corporation VLSI integrated circuit having parallel bonding areas
EP0167599A4 (de) * 1984-01-12 1988-02-08 Advanced Micro Devices Inc Nichtlineares lastelement für speicherzelle.
JPH0418798Y2 (de) * 1985-06-08 1992-04-27
US5087956A (en) * 1985-10-25 1992-02-11 Hitachi, Ltd. Semiconductor memory device
JPS6295843U (de) * 1985-12-03 1987-06-18
JPS62218022A (ja) * 1986-03-19 1987-09-25 Inoue Japax Res Inc 放電加工装置
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
US4864539A (en) * 1987-01-15 1989-09-05 International Business Machines Corporation Radiation hardened bipolar static RAM cell
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
DE69324864T2 (de) * 1992-08-21 1999-10-07 Stmicroelectronics, Inc. Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur
JP5269428B2 (ja) 2008-02-01 2013-08-21 株式会社東芝 半導体装置及びその製造方法
TWI758077B (zh) * 2021-01-21 2022-03-11 凌北卿 具有pn二極體之非揮發性記憶體元件
US20240063212A1 (en) * 2022-08-18 2024-02-22 Globalfoundries U.S. Inc. Integrated circuit structure with diode over lateral bipolar transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung
DE1574651C3 (de) * 1968-03-01 1976-01-02 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Flip-Flop-Speicherzelle
US3585412A (en) * 1968-08-27 1971-06-15 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements
US3573758A (en) * 1969-02-27 1971-04-06 Ibm Non-linear impedance means for transistors connected to each other and to a common power source
US3626390A (en) * 1969-11-13 1971-12-07 Ibm Minimemory cell with epitaxial layer resistors and diode isolation
DE2041507A1 (de) * 1970-08-21 1972-02-24 Horst Henn Festkoerperspeicher fuer Binaerinformation
US3849675A (en) * 1973-01-05 1974-11-19 Bell Telephone Labor Inc Low power flip-flop circuits
US3886531A (en) * 1974-02-11 1975-05-27 Texas Instruments Inc Schottky loaded emitter coupled memory cell for random access memory
JPS53108776A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
NL188721B (nl) 1992-04-01
SE438569B (sv) 1985-04-22
DE2950906C2 (de) 1986-04-03
IT1193349B (it) 1988-06-15
NL7812463A (nl) 1980-06-24
JPS5587385A (en) 1980-07-02
FR2444992B1 (de) 1983-11-25
US4322821A (en) 1982-03-30
JPS5840341B2 (ja) 1983-09-05
DE2950906A1 (de) 1980-07-10
GB2038091A (en) 1980-07-16
GB2038091B (en) 1983-07-20
IT7928197A0 (it) 1979-12-19
AU530153B2 (en) 1983-07-07
FR2444992A1 (fr) 1980-07-18
AU5404079A (en) 1980-06-26
CA1152646A (en) 1983-08-23
SE7910457L (sv) 1980-06-23

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee