NL161620C - Werkwijze voor het vervaardigen van een geintegreerde schakeling. - Google Patents
Werkwijze voor het vervaardigen van een geintegreerde schakeling.Info
- Publication number
- NL161620C NL161620C NL6818552.A NL6818552A NL161620C NL 161620 C NL161620 C NL 161620C NL 6818552 A NL6818552 A NL 6818552A NL 161620 C NL161620 C NL 161620C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- integrated circuit
- integrated
- circuit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/055—Fuse
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/123—Polycrystalline diffuse anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/124—Polycrystalline emitter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70146068A | 1968-01-29 | 1968-01-29 | |
US81337969A | 1969-02-27 | 1969-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6818552A NL6818552A (de) | 1969-07-31 |
NL161620C true NL161620C (nl) | 1980-02-15 |
Family
ID=27106790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6818552.A NL161620C (nl) | 1968-01-29 | 1968-12-23 | Werkwijze voor het vervaardigen van een geintegreerde schakeling. |
Country Status (5)
Country | Link |
---|---|
US (2) | US3519901A (de) |
DE (1) | DE1903961C3 (de) |
FR (1) | FR1597169A (de) |
GB (1) | GB1238688A (de) |
NL (1) | NL161620C (de) |
Families Citing this family (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3894893A (en) * | 1968-03-30 | 1975-07-15 | Kyodo Denshi Gijyutsu Kk | Method for the production of monocrystal-polycrystal semiconductor devices |
US3675090A (en) * | 1968-11-04 | 1972-07-04 | Energy Conversion Devices Inc | Film deposited semiconductor devices |
US3825997A (en) * | 1969-10-02 | 1974-07-30 | Sony Corp | Method for making semiconductor device |
US4416049A (en) * | 1970-05-30 | 1983-11-22 | Texas Instruments Incorporated | Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor |
US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
US3667008A (en) * | 1970-10-29 | 1972-05-30 | Rca Corp | Semiconductor device employing two-metal contact and polycrystalline isolation means |
US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
JPS5347669B1 (de) * | 1971-01-14 | 1978-12-22 | ||
US3921282A (en) * | 1971-02-16 | 1975-11-25 | Texas Instruments Inc | Insulated gate field effect transistor circuits and their method of fabrication |
US3832769A (en) * | 1971-05-26 | 1974-09-03 | Minnesota Mining & Mfg | Circuitry and method |
US3837935A (en) * | 1971-05-28 | 1974-09-24 | Fujitsu Ltd | Semiconductor devices and method of manufacturing the same |
JPS555704B1 (de) * | 1971-06-15 | 1980-02-08 | ||
JPS5443356B2 (de) * | 1971-06-16 | 1979-12-19 | ||
US4396933A (en) * | 1971-06-18 | 1983-08-02 | International Business Machines Corporation | Dielectrically isolated semiconductor devices |
JPS4835778A (de) * | 1971-09-09 | 1973-05-26 | ||
US3791024A (en) * | 1971-10-21 | 1974-02-12 | Rca Corp | Fabrication of monolithic integrated circuits |
BE794202A (fr) * | 1972-01-19 | 1973-05-16 | Intel Corp | Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires |
JPS5513137B2 (de) * | 1972-02-10 | 1980-04-07 | ||
US3988824A (en) * | 1972-05-22 | 1976-11-02 | Hewlett-Packard Company | Method for manufacturing thin film circuits |
US3864817A (en) * | 1972-06-26 | 1975-02-11 | Sprague Electric Co | Method of making capacitor and resistor for monolithic integrated circuits |
US3897282A (en) * | 1972-10-17 | 1975-07-29 | Northern Electric Co | Method of forming silicon gate device structures with two or more gate levels |
US3860836A (en) * | 1972-12-01 | 1975-01-14 | Honeywell Inc | Stabilization of emitter followers |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
US3978515A (en) * | 1974-04-26 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Integrated injection logic using oxide isolation |
US3904450A (en) * | 1974-04-26 | 1975-09-09 | Bell Telephone Labor Inc | Method of fabricating injection logic integrated circuits using oxide isolation |
JPS5543625B2 (de) * | 1975-01-29 | 1980-11-07 | ||
JPS5543624B2 (de) * | 1975-01-29 | 1980-11-07 | ||
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
JPS5132957B1 (de) * | 1975-04-30 | 1976-09-16 | ||
US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
US4028694A (en) * | 1975-06-10 | 1977-06-07 | International Business Machines Corporation | A/D and D/A converter using C-2C ladder network |
JPS5215262A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacturing method |
US4317844A (en) * | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
JPS5950113B2 (ja) * | 1975-11-05 | 1984-12-06 | 株式会社東芝 | 半導体装置 |
JPS5268376A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor device |
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
US4173819A (en) * | 1976-02-13 | 1979-11-13 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing a dynamic random access memory using MOS FETS |
US4004954A (en) * | 1976-02-25 | 1977-01-25 | Rca Corporation | Method of selective growth of microcrystalline silicon |
FR2404922A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Dispositif semi-conducteur formant cellule de memoire morte programmable |
JPS5214592B1 (de) * | 1976-08-17 | 1977-04-22 | ||
US4208781A (en) * | 1976-09-27 | 1980-06-24 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4167804A (en) * | 1976-12-13 | 1979-09-18 | General Motors Corporation | Integrated circuit process compatible surge protection resistor |
US4133000A (en) * | 1976-12-13 | 1979-01-02 | General Motors Corporation | Integrated circuit process compatible surge protection resistor |
JPS5233473B1 (de) * | 1976-12-20 | 1977-08-29 | ||
US4187602A (en) * | 1976-12-27 | 1980-02-12 | Texas Instruments Incorporated | Static memory cell using field implanted resistance |
JPS53108776A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
JPS583380B2 (ja) * | 1977-03-04 | 1983-01-21 | 株式会社日立製作所 | 半導体装置とその製造方法 |
US4209716A (en) * | 1977-05-31 | 1980-06-24 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer |
US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
JPS5828744B2 (ja) * | 1977-05-31 | 1983-06-17 | テキサス インスツルメンツ インコ−ポレイテツド | シリコンゲ−ト型集積回路デバイスおよびその製造方法 |
US4234889A (en) * | 1977-05-31 | 1980-11-18 | Texas Instruments Incorporated | Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon |
JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
NL190710C (nl) * | 1978-02-10 | 1994-07-01 | Nec Corp | Geintegreerde halfgeleiderketen. |
US4214917A (en) * | 1978-02-10 | 1980-07-29 | Emm Semi | Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements |
US4178674A (en) * | 1978-03-27 | 1979-12-18 | Intel Corporation | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
DE2927824A1 (de) * | 1978-07-12 | 1980-01-31 | Vlsi Technology Res Ass | Halbleitervorrichtungen und ihre herstellung |
JPS5522882A (en) * | 1978-08-30 | 1980-02-18 | Tdk Corp | Semiconductor device |
JPS594866B2 (ja) * | 1978-08-30 | 1984-02-01 | ティーディーケイ株式会社 | 絶縁ゲイト型電界効果半導体装置の作製方法 |
JPS5522881A (en) * | 1978-08-30 | 1980-02-18 | Tdk Corp | Manufacturing method of semiconductor device |
DE2842319A1 (de) * | 1978-09-28 | 1980-04-17 | Siemens Ag | Monolithisch integrierte schaltung mit hoher spannungsfestigkeit zur koppelung galvanisch getrennter schaltkreise |
US4210950A (en) * | 1978-09-29 | 1980-07-01 | Bell Telephone Laboratories, Incorporated | High-ratio-accuracy capacitor geometries for integrated circuits |
US4249968A (en) * | 1978-12-29 | 1981-02-10 | International Business Machines Corporation | Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers |
US4475964A (en) * | 1979-02-20 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
EP0020135A1 (de) * | 1979-05-29 | 1980-12-10 | Massachusetts Institute Of Technology | Dreidimensionale Integration durch graphische Epitaxie |
US4291328A (en) * | 1979-06-15 | 1981-09-22 | Texas Instruments Incorporated | Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon |
JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
US4785341A (en) * | 1979-06-29 | 1988-11-15 | International Business Machines Corporation | Interconnection of opposite conductivity type semiconductor regions |
JPS5640269A (en) * | 1979-09-11 | 1981-04-16 | Toshiba Corp | Preparation of semiconductor device |
JPS5643752A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Mos memory cell |
US4411059A (en) * | 1979-10-18 | 1983-10-25 | Picker Corporation | Method for manufacturing a charge splitting resistive layer for a semiconductor gamma camera |
WO1981002222A1 (en) * | 1980-01-21 | 1981-08-06 | Mostek Corp | Composit gate interconnect structure |
JPS5741826B1 (de) * | 1980-02-08 | 1982-09-04 | ||
US4292730A (en) * | 1980-03-12 | 1981-10-06 | Harris Corporation | Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization |
US4404658A (en) * | 1980-03-12 | 1983-09-13 | Harris Corporation | Mesa bipolar memory cell and method of fabrication |
JPS55160456A (en) * | 1980-05-30 | 1980-12-13 | Hitachi Ltd | Semiconductor device |
FR2493045A1 (fr) * | 1980-10-23 | 1982-04-30 | Thomson Csf | Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication |
US4358326A (en) * | 1980-11-03 | 1982-11-09 | International Business Machines Corporation | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing |
EP0056186A3 (de) * | 1981-01-08 | 1983-07-20 | Texas Instruments Incorporated | Integrierte Schaltungsanordnung mit Diodenverbindungsebene |
US4455568A (en) * | 1981-08-27 | 1984-06-19 | American Microsystems, Inc. | Insulation process for integrated circuits |
DE3241959A1 (de) * | 1981-11-13 | 1983-05-26 | Canon K.K., Tokyo | Halbleiterbauelement |
JPS5921034A (ja) * | 1982-07-27 | 1984-02-02 | Toshiba Corp | 半導体装置 |
FR2544752B1 (fr) * | 1983-04-25 | 1985-07-05 | Commissariat Energie Atomique | Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement |
US4528582A (en) * | 1983-09-21 | 1985-07-09 | General Electric Company | Interconnection structure for polycrystalline silicon resistor and methods of making same |
US4651409A (en) * | 1984-02-09 | 1987-03-24 | Ncr Corporation | Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor |
NL8400789A (nl) * | 1984-03-13 | 1985-10-01 | Philips Nv | Werkwijze omvattende het gelijktijdig vervaardigen van halfgeleidergebieden met verschillende dotering. |
JPS6163061A (ja) * | 1985-06-14 | 1986-04-01 | Nec Corp | 半導体装置 |
IT1214621B (it) * | 1985-07-04 | 1990-01-18 | Ates Componenti Elettron | Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta. |
US4663831A (en) * | 1985-10-08 | 1987-05-12 | Motorola, Inc. | Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers |
US4906987A (en) * | 1985-10-29 | 1990-03-06 | Ohio Associated Enterprises, Inc. | Printed circuit board system and method |
US4827323A (en) * | 1986-01-07 | 1989-05-02 | Texas Instruments Incorporated | Stacked capacitor |
JPS63136668A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
US5293138A (en) * | 1988-04-12 | 1994-03-08 | Electronic Decisions Incorporated | Integrated circuit element, methods of fabrication and utilization |
US5049958A (en) * | 1989-01-27 | 1991-09-17 | Texas Instruments Incorporated | Stacked capacitors for VLSI semiconductor devices |
JP3124473B2 (ja) * | 1994-08-19 | 2001-01-15 | セイコーインスツルメンツ株式会社 | 半導体装置とその製造方法 |
JPH11220040A (ja) * | 1998-02-02 | 1999-08-10 | Mitsubishi Electric Corp | スタティック半導体記憶装置 |
JP3431517B2 (ja) * | 1998-10-13 | 2003-07-28 | 松下電器産業株式会社 | 半導体装置 |
TWI223733B (en) * | 2003-09-25 | 2004-11-11 | Toppoly Optoelectronics Corp | LCD with a multi silicon layer structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3366519A (en) * | 1964-01-20 | 1968-01-30 | Texas Instruments Inc | Process for manufacturing multilayer film circuits |
US3323198A (en) * | 1965-01-27 | 1967-06-06 | Texas Instruments Inc | Electrical interconnections |
-
1968
- 1968-01-29 US US701460A patent/US3519901A/en not_active Expired - Lifetime
- 1968-12-03 GB GB1238688D patent/GB1238688A/en not_active Expired
- 1968-12-23 NL NL6818552.A patent/NL161620C/xx not_active IP Right Cessation
- 1968-12-26 FR FR1597169D patent/FR1597169A/fr not_active Expired
-
1969
- 1969-01-28 DE DE1903961A patent/DE1903961C3/de not_active Expired
- 1969-02-27 US US813379*A patent/US3570114A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3570114A (en) | 1971-03-16 |
NL6818552A (de) | 1969-07-31 |
DE1903961B2 (de) | 1979-10-25 |
US3519901A (en) | 1970-07-07 |
DE1903961C3 (de) | 1980-07-17 |
GB1238688A (de) | 1971-07-07 |
FR1597169A (de) | 1970-06-22 |
DE1903961A1 (de) | 1969-07-31 |
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