NL1036769A1 - Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device. - Google Patents
Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device. Download PDFInfo
- Publication number
- NL1036769A1 NL1036769A1 NL1036769A NL1036769A NL1036769A1 NL 1036769 A1 NL1036769 A1 NL 1036769A1 NL 1036769 A NL1036769 A NL 1036769A NL 1036769 A NL1036769 A NL 1036769A NL 1036769 A1 NL1036769 A1 NL 1036769A1
- Authority
- NL
- Netherlands
- Prior art keywords
- patterning device
- cleaning
- radiation
- lithographic apparatus
- electrode
- Prior art date
Links
- 238000000059 patterning Methods 0.000 title claims description 202
- 238000004140 cleaning Methods 0.000 title description 174
- 238000000034 method Methods 0.000 title description 23
- 238000004519 manufacturing process Methods 0.000 title description 8
- 230000005855 radiation Effects 0.000 claims description 116
- 239000000758 substrate Substances 0.000 claims description 58
- 238000001459 lithography Methods 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 description 101
- 239000000356 contaminant Substances 0.000 description 70
- 239000007789 gas Substances 0.000 description 26
- 230000007246 mechanism Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7134508P | 2008-04-23 | 2008-04-23 | |
| US7134508 | 2008-04-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL1036769A1 true NL1036769A1 (nl) | 2009-10-26 |
Family
ID=40810613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1036769A NL1036769A1 (nl) | 2008-04-23 | 2009-03-25 | Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20110037960A1 (enExample) |
| JP (1) | JP5535194B2 (enExample) |
| KR (1) | KR20110005288A (enExample) |
| CN (1) | CN102016723A (enExample) |
| NL (1) | NL1036769A1 (enExample) |
| TW (1) | TWI453545B (enExample) |
| WO (1) | WO2009129960A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5758153B2 (ja) | 2010-03-12 | 2015-08-05 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法 |
| US8891080B2 (en) * | 2010-07-08 | 2014-11-18 | Canon Nanotechnologies, Inc. | Contaminate detection and substrate cleaning |
| JP5557674B2 (ja) * | 2010-09-29 | 2014-07-23 | 三菱スペース・ソフトウエア株式会社 | スペースデブリ焼滅装置、スペースデブリ焼滅システムおよびスペースデブリ焼滅方法 |
| JP5821397B2 (ja) * | 2011-08-16 | 2015-11-24 | 富士通セミコンダクター株式会社 | 極紫外露光マスク用防塵装置及び露光方法 |
| CN103782365B (zh) * | 2011-09-05 | 2016-10-05 | 株式会社东芝 | 掩模版吸盘洁净器及掩模版吸盘清洁方法 |
| US20140253887A1 (en) * | 2013-03-07 | 2014-09-11 | Applied Materials, Inc. | Contamination prevention for photomask in extreme ultraviolet lithography application |
| US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
| US9378941B2 (en) | 2013-10-02 | 2016-06-28 | Applied Materials, Inc. | Interface treatment of semiconductor surfaces with high density low energy plasma |
| JP2015176934A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 静電チャッククリーナ、クリーニング方法、および露光装置 |
| US9539622B2 (en) * | 2014-03-18 | 2017-01-10 | Asml Netherlands B.V. | Apparatus for and method of active cleaning of EUV optic with RF plasma field |
| CN106164776B (zh) * | 2014-04-09 | 2019-04-23 | Asml荷兰有限公司 | 用于清洁对象的装置 |
| JP2018500596A (ja) * | 2014-12-31 | 2018-01-11 | エーエスエムエル ホールディング エヌ．ブイ． | パターニングデバイス環境を有するリソグラフィ装置 |
| JP6702672B2 (ja) * | 2015-09-03 | 2020-06-03 | キヤノン株式会社 | インプリント装置、物品の製造方法及び供給装置 |
| KR20180098784A (ko) | 2017-02-27 | 2018-09-05 | 김창연 | 기도용 텐트 |
| WO2019001931A1 (en) * | 2017-06-29 | 2019-01-03 | Asml Netherlands B.V. | SYSTEM, LITHOGRAPHIC APPARATUS, AND METHOD FOR REDUCING OXIDATION OR OXIDE REMOVAL ON SUBSTRATE CARRIER |
| NL2021410A (en) * | 2017-08-28 | 2019-03-07 | Asml Holding Nv | Apparatus for and method cleaning a support inside a lithography apparatus |
| IL273836B2 (en) | 2017-10-31 | 2023-09-01 | Asml Netherlands Bv | A measuring device, a method for measuring a structure, a method for making a device |
| WO2019129456A1 (en) * | 2017-12-28 | 2019-07-04 | Asml Netherlands B.V. | Apparatus for and a method of removing contaminant particles from a component of an apparatus |
| EP3506011A1 (en) * | 2017-12-28 | 2019-07-03 | ASML Netherlands B.V. | Apparatus for and a method of removing contaminant particles from a component of a metrology apparatus |
| JP7262939B2 (ja) * | 2018-07-20 | 2023-04-24 | キヤノン株式会社 | クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法 |
| CN110899246A (zh) * | 2018-09-14 | 2020-03-24 | 长鑫存储技术有限公司 | 光罩缺陷的清洁装置及清洁方法 |
| CN111061129B (zh) * | 2018-10-17 | 2022-11-01 | 台湾积体电路制造股份有限公司 | 光刻系统及清洁光刻系统的方法 |
| CN112969970B (zh) * | 2018-11-09 | 2024-10-11 | Asml控股股份有限公司 | 用于清洁光刻设备内的支撑件的设备和方法 |
| NL2024289B1 (en) * | 2018-11-27 | 2020-09-25 | Asml Netherlands Bv | Membrane cleaning apparatus |
| CN113169047B (zh) | 2018-12-10 | 2024-09-10 | 应用材料公司 | 在极紫外线光刻应用中从光掩模去除附接特征 |
| KR102813711B1 (ko) * | 2019-05-02 | 2025-05-29 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법 |
| EP3809204A1 (en) * | 2019-10-18 | 2021-04-21 | ASML Netherlands B.V. | Patterning device conditioning system and method |
| EP4045974A1 (en) * | 2019-10-18 | 2022-08-24 | ASML Netherlands B.V. | Membrane cleaning apparatus |
| KR102788879B1 (ko) | 2019-10-30 | 2025-04-01 | 삼성전자주식회사 | 극자외선 노광 시스템 |
| US11294292B2 (en) | 2019-12-30 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Particle removing assembly and method of cleaning mask for lithography |
| IL294398A (en) | 2020-01-23 | 2022-08-01 | Asml Holding Nv | A lithographic system provided with a deflection mechanism to change the trajectory of particulate debris |
| US11681235B2 (en) | 2021-03-05 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for cleaning an EUV mask |
| US12287589B2 (en) | 2021-03-26 | 2025-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for removing contamination |
| CN118265951A (zh) * | 2021-11-25 | 2024-06-28 | Asml荷兰有限公司 | 一种光学装置、照射系统、投影系统、euv辐射源、光刻设备、污染沉积防止方法以及光学部件翻新方法 |
| WO2024132381A1 (en) * | 2022-12-22 | 2024-06-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN120958388A (zh) * | 2023-04-14 | 2025-11-14 | Asml荷兰有限公司 | 用于在光刻中使用的静电夹具 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260245A (ja) * | 1996-03-21 | 1997-10-03 | Canon Inc | マスクの異物除去装置 |
| JP3644246B2 (ja) * | 1998-04-10 | 2005-04-27 | 三菱電機株式会社 | Ｘ線露光方法 |
| US6369874B1 (en) * | 2000-04-18 | 2002-04-09 | Silicon Valley Group, Inc. | Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography |
| US6781673B2 (en) * | 2000-08-25 | 2004-08-24 | Asml Netherlands B.V. | Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| US6828569B2 (en) * | 2001-11-19 | 2004-12-07 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| EP1329770A1 (en) * | 2002-01-18 | 2003-07-23 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1329773A3 (en) * | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Lithographic apparatus, apparatus cleaning method, and device manufacturing method |
| KR100563102B1 (ko) * | 2002-09-12 | 2006-03-27 | 에이에스엠엘 네델란즈 비.브이. | 표면들로부터 입자들을 제거함으로써 세정하는 방법,세정장치 및 리소그래피투영장치 |
| EP1411392B1 (en) * | 2002-10-18 | 2008-09-17 | ASML Netherlands B.V. | Lithographic projection apparatus |
| SG115575A1 (en) * | 2002-10-18 | 2005-10-28 | Asml Netherlands Bv | Lithographic projection apparatus comprising a secondary electron removal unit |
| SG121847A1 (en) * | 2002-12-20 | 2006-05-26 | Asml Netherlands Bv | Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system |
| US7248332B2 (en) * | 2004-07-13 | 2007-07-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006120776A (ja) * | 2004-10-20 | 2006-05-11 | Canon Inc | 露光装置 |
| JP2006287003A (ja) * | 2005-04-01 | 2006-10-19 | Tohoku Univ | 露光装置 |
| JP2007329288A (ja) * | 2006-06-07 | 2007-12-20 | Canon Inc | 露光装置及びデバイス製造方法 |
| US7671347B2 (en) * | 2006-10-10 | 2010-03-02 | Asml Netherlands B.V. | Cleaning method, apparatus and cleaning system |
-
2009
- 2009-03-25 NL NL1036769A patent/NL1036769A1/nl active Search and Examination
- 2009-04-09 TW TW098111880A patent/TWI453545B/zh not_active IP Right Cessation
- 2009-04-16 WO PCT/EP2009/002782 patent/WO2009129960A1/en not_active Ceased
- 2009-04-16 CN CN2009801144055A patent/CN102016723A/zh active Pending
- 2009-04-16 JP JP2011505407A patent/JP5535194B2/ja not_active Expired - Fee Related
- 2009-04-16 KR KR1020107026139A patent/KR20110005288A/ko not_active Abandoned
- 2009-04-16 US US12/989,045 patent/US20110037960A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009129960A1 (en) | 2009-10-29 |
| JP2011519156A (ja) | 2011-06-30 |
| CN102016723A (zh) | 2011-04-13 |
| US20110037960A1 (en) | 2011-02-17 |
| TWI453545B (zh) | 2014-09-21 |
| KR20110005288A (ko) | 2011-01-17 |
| JP5535194B2 (ja) | 2014-07-02 |
| TW200949458A (en) | 2009-12-01 |
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| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed |