1323832 A7 _________ B7 ___ 五、發明説明（1 ) 本發明係有關於一微影投影裝置，其包括： 一輻射系統’用以供應一輻射之投影光束； 一支撐構造，用以支撐圖案產生裝置，該圖案產生裝置 依照所需的圖案賦予投影光束圖案； 一基材檯，用以固持該蓦材；及 一投影系統’用以將該具有圖案之光束投影到該基材之 一目標位置上。 文中所使用之術語「圖案產生裝置」應廣泛解釋為能夠 賦予入射輻射光束一具有圖案之橫剖面，該圖案對應欲產 生在該基材之目標部份中的一圖案；術語「照明值」亦可 用於本文之中。通常，產生於該目標部份中之圖案會對應 一裝置中的一特殊功能層，諸如積體電路或是其他裝置（ 參考下文）。此等圖案產生構件之範例包括： 一光罩’ 一光罩之觀念在微影攝影中係為人所熟知，且 光罩之形式包括諸如一元、交替相位偏移（alternating phase-shift)、減弱相位偏移（attenuated phase_shift)， 以及不同種類的複合式光罩。在輻射光束中放置此一光罩 ，會根據光罩上的圖案產生選擇性的傳遞（在一傳遞光罩 的案例中）或是反射（在一反射光罩的案例中）照射在該 光罩上的輕射。在一個光罩的案例中，該支撐構造通常係 為一光罩檯，其確保能夠將光罩固持於入射輻射光束中的 所需位置，且如有需要，該支撐構造能夠相對於光束移動。 一可程式控制的鏡子陣列，此一裝置之其中一個範例係 為-矩陣可定址表面，其具有—黏彈性控制展以及一反射 本紙張尺度適用中國g家標準(CNS) A4規格(210X297公着) 1323832 A7 B71323832 A7 _________ B7 ___ V. Description of the Invention (1) The present invention relates to a lithographic projection apparatus comprising: a radiation system 'to supply a projection beam of radiation; a support structure for supporting the pattern generating device, The pattern generating device imparts a projected beam pattern in accordance with a desired pattern; a substrate table for holding the coffin; and a projection system 'for projecting the patterned beam onto a target position of the substrate. The term "pattern generating device" as used herein shall be interpreted broadly to impart a cross-section of a pattern of incident radiation beams corresponding to a pattern to be produced in a target portion of the substrate; the term "illumination value" is also Can be used in this article. Typically, the pattern produced in the target portion will correspond to a particular functional layer in a device, such as an integrated circuit or other device (see below). Examples of such pattern generating members include: A reticle' The concept of a reticle is well known in lithography, and the form of the reticle includes, for example, a unitary, alternating phase-shift, weakening Attenuated phase_shift, and different types of composite reticle. Placing the reticle in the radiation beam will selectively transmit (in the case of a transfer reticle) or reflect (in the case of a reflective reticle) the reticle according to the pattern on the reticle. Light shot on. In the case of a reticle, the support structure is typically a reticle stage that ensures that the reticle can be held in the desired position in the incident radiation beam and that the support structure can be moved relative to the beam if desired. A programmable array of mirrors, one example of which is a matrix-addressable surface having a viscoelastic control profile and a reflective paper scale for the China National Standard (CNS) A4 specification (210X297) ) 1323832 A7 B7
五、發明説明（2 ) 表面。此一裝置之基本原理係為（例如）該反射表面之定 址面積將入射光線反射成繞射光線，而未定址之面積將入 射光線反射成非繞射光線。利用一適當的濾鏡，能夠過濾 掉反射光束之非繞射光線，僅留下繞射之光線；以此方式 ’根據該矩陣可定址表面之定址圖案使光線產生圖案。一 可程式控制鏡子陣列之另一實施例使用一微小鏡子的矩陣 〇 佈置’各個微小鏡子能夠藉由施加一適當局部化的電場， 或藉由使用一壓電啟動裝置而個別對於一軸線傾斜。同樣 的’該些鏡子係為矩陣可定址之鏡子，以致於使定址之鏡 子以不同的方向將入射光線反射到未定址之鏡子；以此方 式’根據矩陣可定址鏡子之定址圖案使該反射光束產生圖 案’使用適當的電子裝置能夠實行所需的矩陣定址/在上 述的兩種情況中，該圖案產生裝置能夠包括一個或更多的 可程式控制鏡子陣列。更多與本文有關之鏡子陣列的資訊 可由例如.美國專利第5,296,89 1號與美國專利第5 523,1 93 號、PCT專利申請案W0 98/3 8597號與W0 98/33〇96號中得 到’其内容係以參考方式併入本文中。在_可程式控制鏡 子陣列的案例中，该支撐構造可為例如一框架或檯，其能 夠視需要加以固定或移動。 一可程_式控制LCD陣列，美國專利第5,229 872號中係揭 露此一構造之一範例，其内容係以參考方式併入本文之中 。如上述，在此案例中該支撐構造可為例如一框架或楼， 其能夠視需要加以固定或移動。 為求簡明起見，在某些位置中 本文其餘部分可特別針V. Description of the invention (2) Surface. The basic principle of such a device is, for example, that the address area of the reflective surface reflects incident light into diffracted light, while the unaddressed area reflects the incident light into non-diffracted light. With a suitable filter, the non-diffracted light of the reflected beam can be filtered out, leaving only the diffracted light; in this way, the light is patterned according to the addressing pattern of the addressable surface of the matrix. Another embodiment of a programmable array of mirrors uses a matrix of tiny mirrors ’ arrangement 'each micromirror can be individually tilted for an axis by applying a suitably localized electric field, or by using a piezoelectric actuator. The same 'the mirrors are matrix-addressable mirrors such that the addressed mirror reflects incident light in different directions to the unaddressed mirror; in this way 'the reflected beam is made according to the addressing pattern of the matrix addressable mirror Producing a pattern 'The desired matrix addressing can be performed using appropriate electronic devices. In both cases, the pattern generating device can include one or more programmable mirror arrays. Further information on mirror arrays relating to this document can be found in, for example, U.S. Patent No. 5,296,89, and U.S. Patent No. 5,523,1, PCT Patent Application No. WO 98/3,8,597, and No. WO 98/33,96 'The contents are incorporated herein by reference. In the case of a programmable mirror array, the support structure can be, for example, a frame or table that can be fixed or moved as needed. An example of such a configuration is disclosed in U.S. Patent No. 5,229,872, the disclosure of which is incorporated herein by reference. As mentioned above, in this case the support structure can be, for example, a frame or floor that can be fixed or moved as needed. For the sake of brevity, in some locations, the rest of this article can be specially needled.
1323832 A7 _ B7 五、發明説明（3 ) 對關於一光罩或光罩檯之範例，然而，此等情況中所說明 的一般原理應可見於如以上所提出之較廣泛上下文中的圖 案產生裝置。 微影投影裝置能夠用於例如積體電路（〖Cs )之製造，在 此一案例中’該圖案產生裝置能夠對應該IC之個別層產生 一電路圖案’且該圖案能夠成像在位於一基材（矽晶圓） 上的一目標部分（例如包括一個或更多的印模）上，該基 材已經塗佈一層輻射感應材料（抗蝕劑）^通常，一單獨 之晶圓能夠包含鄰接目標部分的整個網路，該些目標部分 係經由投影系統以一次一個的方式依次加以照射。在藉由 一光罩檯上之光罩產生圖案的現有裝置中，能夠區分出兩 種不同種類的機器。在一種微影投影裝置中，各目標部分 係藉由將整個光罩圖案一起曝露到該目標部分上加以照射 ’此一裝置普遍係稱之為晶圓階段器（stepper )。在另一 裝置（普遍稱之為—階段式掃描（step_and_scan)裝置） 中’各目標部分係藉由投影光束以一特定參考方向（「掃 描j方向）逐步掃描該光罩圖案加以照射，同時掃描平行 或反平行此方向掃描該基材檯。通常由於該投影光束具有 一放大因數Μ(通常〈丨），在基材檯處之掃描速度v為因數 Μ乘以光旱檯的掃描速度。更多有關於如文中說明之微影 裝置的資訊可由例如美國專利第ό，046,792號所取得，其内 容係以參考方式併入文中。 在使用一微影投影裝置的製造程序中，一圖案（例如在 光罩中之圖案）係成像於一基材上，該基材至少部分係 0 規格（21〇χ297公爱----- 1323832 五、發明説明（4 由一層福射感應材料（抗蚀劑）戶斤覆蓋。在成像步帮 ’該基材可經歷不同的程序，諸如塗底漆、塗佈抗蝕劑與 軟烘烤（soft bake)。曝光之後，該基材可以經歷其他的 程序’諸如-後曝光烘、烤（PEB)、顯影、硬烘烤與成像 特性之測量與檢查。此系列之程序係用以使一裝置（例如 —積體電路）之一單層的基礎，此一具有圖案之 層接著可經歷不同的程序，諸如蝕刻、離子值入（摻雜） 、金屬化、氧化、化學機械拋光等等，所有程序皆預計用 以完成一單層。若需要許多層時，則對各新層而言，整個 程序（或其變化形式）必須加以重複。最後，一陣列之元 件將會顯現於該基材（晶圓）之上，這些元件接著係藉著 一種技術（諸如切割或鋸開）使其彼此分離，因而使個別 的裝置能夠安置到一托架上、連接到插腳等等。更多有關 於此等程序之資訊能夠由例如McGraw Hill出版公司於 1997年所出版的「微晶片製造：半導體加工之實用導引」 (弟二版’ ISBN 0-07-067250-4號）一書中獲得，作者為1323832 A7 _ B7 V. INSTRUCTIONS (3) For an example of a reticle or reticle stage, however, the general principles described in these cases should be seen in the pattern generation apparatus in the broader context as set forth above. . The lithography projection apparatus can be used, for example, in the manufacture of an integrated circuit (Cs), in which case the pattern generating apparatus can generate a circuit pattern corresponding to individual layers of the IC and the pattern can be imaged on a substrate On a target portion (eg, including one or more stamps) on the substrate, the substrate has been coated with a layer of radiation-sensitive material (resist). Typically, a single wafer can contain adjacent targets. Part of the entire network, the target parts are sequentially illuminated one by one via the projection system. In prior art devices that create a pattern by a reticle on a reticle stage, two different types of machines can be distinguished. In a lithographic projection apparatus, each target portion is illuminated by exposing the entire reticle pattern together to the target portion. This device is commonly referred to as a wafer stepper. In another device (commonly referred to as a step-and-scan device), each target portion is illuminated by a stepwise scanning of the reticle pattern by a projection beam in a specific reference direction ("scan j direction") while scanning Parallel or anti-parallel scanning of the substrate table in this direction. Usually, since the projection beam has an amplification factor Μ (usually <丨), the scanning speed v at the substrate table is a factor Μ multiplied by the scanning speed of the light station. A number of information relating to the lithography apparatus as described herein is available, for example, from U.S. Patent No. 4,046,792, the disclosure of which is incorporated herein by reference in its entirety in The pattern in the reticle is imaged on a substrate that is at least partially 0-size (21〇χ297 public----- 1323832. 5. Description of the invention (4 by a layer of radiation-sensitive material (resistance The substrate is covered. In the imaging step, the substrate can undergo different procedures, such as priming, coating resist, and soft bake. After exposure, the substrate can undergo other Procedures such as - post exposure bake, bake (PEB), development, hard bake and imaging characteristics measurement and inspection. This series of procedures is used to make a single layer of a device (eg, integrated circuit), This patterned layer can then undergo different procedures, such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which are expected to complete a single layer. If many layers are required At the time, the entire program (or its variations) must be repeated for each new layer. Finally, an array of components will appear on the substrate (wafer), followed by a technique Separating from each other (such as cutting or sawing), thereby enabling individual devices to be placed on a carrier, connected to pins, etc. More information about such procedures can be obtained, for example, by McGraw Hill Publishing Company, 1997. Published "Microchip Manufacturing: A Practical Guide to Semiconductor Processing" (Diverse 2 Edition ' ISBN 0-07-067250-4), authored by
Peter van Zant，其内容係以參考方式併入本文。 為求簡明起見’以後將該投影系統稱之為「鏡頭」，然 而，此術語應廣泛地解釋成包含不同種類的投影系統，包 括例如折射光學儀器、反射光學儀器以及反射折射式系統 。*玄輕射系統亦可包括根據任何這些設計所運作的組件， 用Θ引導、定形或是控制該輻射的投影光束，且此等組件 於以下亦可整體或個別稱之為一「鏡頭」。另外，該微影 裝置可具有兩個或更多的基材檯（且/或兩個或更多的光罩 r\ 本纸張尺度 中國埋家標準_ -8 - (CNS) A4規格（210X297公釐）Peter van Zant, the contents of which are incorporated herein by reference. For the sake of brevity, the projection system will be referred to as a "lens" in the future. However, the term should be broadly interpreted to encompass different types of projection systems, including, for example, refractive optical instruments, reflective optical instruments, and catadioptric systems. The mysterious light system may also include components that operate according to any of these designs, for guiding, shaping, or controlling the projected beam of the radiation, and such components may also be referred to collectively or individually as a "lens". In addition, the lithography apparatus may have two or more substrate stages (and/or two or more reticle r\ this paper size Chinese burial standard _ -8 - (CNS) A4 specification (210X297 MM)
五、發明説明（ A7 B7 5 接）°在此等「多階段」裝置之中，額外的檯件能夠平行 使用’或是一個或更多的檯件能夠實行準備步驟，而一個 或更多的其他檯件能夠作為曝光之用。雙階段微影裝置係 說明於例如美國專利第5,969,441號與W0 98/40791號之中 ’其内容係以參考方式併入本文中。 在一微影裝置中’能夠成像於基材上的尺寸特性係由投 5V轉射之波長所限制。欲生產具有高元件密度，且因而具 有較快操作速度的積體電路，其需要能夠顯像較微小的特 性。儘管大多數現有的微影投影裝置使用由水銀燈或受激 準分子雷射所產生之紫外線，其打算使用波長較短（約i 3 奈米）之輻射。此輻射係稱為遠紫外線（EUV )或是弱X 射線’且可行之來源包括例如雷射產生之電漿來源、放電 電漿來源’或是來自於電子貯存環之同步輻射。 某些遠紫外線來源（特別是電漿來源）散射大量的污染 分子、離子與其他（快速運動）顆粒。如果容許此等顆粒 到達該照明系統（其係位於福射來源之下游，或是裝置中 之更下游處），則該些顆粒會損壞脆弱的反射鏡與其他元 件’並導致在光學元件之表面上產生一吸收層β此等損壞 與產生之吸收層導致不需要的光束強度損失，增加了所需 的曝光時間，並因而降低了機器之生產量，且難以移除或 修復。欲防止污染顆粒到達該照明系統，故提出在通往輻 射系統之出口或疋進入照明系統的入口中設置一實體的障 壁或是窗口。然而，此一窗口其本身易受污染顆粒與產生 吸收層之損壞》同樣的，由於大多數材料會吸收用於微影 01CS184___ 本紙伕尺度適用中國國家標準(CNS) Α4規格(210Χ 297公釐〉 [{4 1323832 A7 B7 五、發明説明（6 ) 波長之遠紫外線，該窗口甚至於嶄新且乾淨之時就會吸收 大比例的光束能量，降低了生產量。此吸收作用會在該窗 口中導致熱應力，甚至會引起窗口之毀壞β 歐洲專利Α-0 957 402號揭露一種污染物障壁，其使用一 中空管，該中空管係位於投影系統之最後實心表面與基材 之間’且以朝向該基材流動之氣體加以沖洗，以防止從抗 触劑散發出來之污染物沉殿於投影鏡片之上。 本發明之一目標係在於供一種改免的；;亏染物障壁，其 能夠用於微影投影裝置之中，以移除不需要的污染物.，例 如由一輻射來源所產生之污染物。 在如前段所述之微影裝置中，根據本發明能達成如此與 其他的目標，其中一污染物障壁包括離子化裝置，用以使 一氣體離子化’該氣體係設置於投射光束穿過的一區域之 中。 該離子化裝置可為例如一電子來源，或是由電容（ capacitive)或感應（inductive) RF放電，或是AC放電所 產生之一電漿。 在本發明之一較佳實施例中，吸收板係設置於離子化裝 置之上游（除了上下文中另有要求以外，本文中所使用之 術》吾「上_游」與「下游」係指示相對於投射光束傳播方向 足方向）。該離子化氣體與污染物係附著到吸收板（其係 帶有負電），且從而加強了污染物之移除效果，此等污染 物可為例如由輻射來源在形成該投影光束所需的輻射以外 所散發的離子或是帶電顆粒。藉著設置一磁性截留器，以 309185___ -10· 尽紙仏度咖f g时料(CNS)繞格(麟297公着)----- 1323832 A7 _____B7 五、發明説明（7 ) 便在淨化氣體供應器的下游截留自由電子，能夠改進離子 化之效果。 在另一較佳實施例之中’所產生的電漿係限制於一管子 之中’ 1¾管子之長度大於寬度。因為產生於電漿中之離子 質量大於電子甚多’故其舉度較電子低甚多。由於顆粒之 擴散速率係由其溫度所控制，故該些電子會快速地擴散出 電漿。因為將電漿限制於其中之該管子的長寬比，電子將 優先朝著該管壁移動，而非朝管子的尾端移動。在電漿體 積中缺少電子會產生電荷極化現象，導致該些離子（來源 與電漿之離子）會跟隨電子離開電漿，朝著管壁移動，並 截留在管壁上，此兩極擴散因而有助於將污染物從投影光 束加以移除。該污染物障壁因此能夠有效地保護脆弱的照 明光學儀器與投影系統，使其免於輻射來源所散發之顆粒 的污染。 在本發明的另一實施例中，該裝置進—步包括氣體供應 裝置，以便在投影光束穿過的一區域中產生一淨化之氣體 流’大體上以投影傳播方向的相反方向加以導引該淨化氣 體泥。因為該氣體流在污染物障壁中大部分係對著傳播光 束之方向流動，故該淨化氣體可有效地阻止與投影光束一 起移動的污染物》 本發明之污染物障壁可用來有助於上述之歐洲專利·Α_〇 957 402號的污染物障壁。 根據本發明之另一觀點提供一種裝置製造方法，其包括 之步驟有： 本紙浪尺度用中画國家標準(CNS) A4規格(210 X 297公爱·)V. INSTRUCTIONS (A7 B7 5 CONNECTION) ° In these "multi-stage" devices, additional table pieces can be used in parallel 'or one or more pieces can perform the preparation steps, and one or more Other parts can be used for exposure. The two-stage lithography apparatus is described, for example, in U.S. Patent Nos. 5,969,441 and WO 98/40791, the contents of each of which are incorporated herein by reference. The dimensional characteristics that can be imaged on a substrate in a lithography apparatus are limited by the wavelength at which a 5V shift is applied. In order to produce an integrated circuit having a high component density and thus having a relatively fast operation speed, it is required to be able to develop a relatively small characteristic. Although most existing lithographic projection devices use ultraviolet light generated by mercury lamps or excimer lasers, it is intended to use radiation of a relatively short wavelength (about i 3 nm). This type of radiation is referred to as extreme ultraviolet (EUV) or weak X-rays and sources of viability include, for example, sources of plasma generated by lasers, sources of electrical discharge plasma, or synchrotron radiation from electronic storage rings. Some sources of far ultraviolet light (especially plasma sources) scatter large amounts of contaminating molecules, ions and other (fast moving) particles. If such particles are allowed to reach the illumination system (either downstream of the source of radiation or downstream of the device), the particles will damage the fragile mirror and other components' and cause surface on the optical component The generation of an absorbing layer β such damage and resulting absorbing layer results in unwanted beam intensity loss, increases the required exposure time, and thus reduces machine throughput, and is difficult to remove or repair. To prevent contamination particles from reaching the illumination system, it is proposed to provide a physical barrier or window in the entrance to the exit of the radiation system or into the illumination system. However, this window is itself susceptible to damage from contaminated particles and the generation of absorbing layers, as most materials are absorbed for lithography 01CS184___ This paper is sized to the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm) [{4 1323832 A7 B7 V. INSTRUCTIONS (6) The wavelength of ultraviolet light, this window will absorb a large proportion of beam energy even when it is new and clean, reducing the production. This absorption will lead to this window. Thermal stresses, even causing damage to the window. The European Patent No. -0 957 402 discloses a contaminant barrier which uses a hollow tube between the last solid surface of the projection system and the substrate. Flushing with a gas flowing toward the substrate to prevent contaminants emanating from the anti-contact agent from sinking over the projection lens. One of the objects of the present invention is to provide a modification; a defect barrier, which is capable of Used in a lithographic projection apparatus to remove unwanted contaminants, such as contaminants produced by a source of radiation. In the lithography apparatus as described in the preceding paragraph, To achieve this and other objectives, one of the contaminant barriers includes an ionization device for ionizing a gas. The gas system is disposed in a region through which the projection beam passes. The ionization device can be, for example, a An electron source, either a capacitive or inductive RF discharge, or a plasma generated by an AC discharge. In a preferred embodiment of the invention, the absorber plate is disposed upstream of the ionization device. (Except as otherwise required by the context, the techniques used in this article, "Upward-Travel" and "Downstream" indicate the direction of the propagating gas relative to the direction of propagation of the projected beam.) The ionized gas and contaminant are attached to the absorber. (It is negatively charged) and thereby enhances the removal of contaminants, which may be, for example, ions or charged particles emitted by the radiation source other than the radiation required to form the projection beam. Set a magnetic interceptor, to 309185___ -10 · paper f 咖 f f f f ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The trapping of free electrons downstream of the supply can improve the effect of ionization. In another preferred embodiment, the resulting plasma is limited to a tube. The length of the tube is greater than the width because it is generated in the plasma. The mass of ions is much higher than that of electrons, so the lift is much lower than that of electrons. Since the diffusion rate of particles is controlled by their temperature, these electrons will quickly diffuse out of the plasma because the plasma is limited to them. The aspect ratio of the tube, the electrons will preferentially move toward the tube wall rather than toward the tail end of the tube. The lack of electrons in the plasma volume creates a charge polarization that causes the ions (source and plasma) The ions follow the electrons away from the plasma, move toward the tube wall, and are trapped on the tube wall. This diffusion of the poles thus helps to remove contaminants from the projected beam. The contaminant barrier thus effectively protects the fragile illumination optics and projection system from contamination by particles emitted by the radiation source. In another embodiment of the invention, the apparatus further includes a gas supply means for generating a purified gas stream in a region through which the projected beam passes, substantially guiding the opposite direction of the projection propagation direction. Purify the gas mud. Since the gas flow mostly flows in the direction of the propagating beam in the contaminant barrier, the purge gas can effectively block contaminants moving together with the projection beam. The contaminant barrier of the present invention can be used to contribute to the above. European patent Α_〇957 402 pollutant barrier. According to another aspect of the present invention, there is provided a device manufacturing method comprising the steps of: CNF National Standard (CNS) A4 specification (210 X 297 public love)
裝 訂 線 1323832Binding line 1323832
、提供基材，其至少部分係藉由一層輻射敏感材料所覆 蓋； -提供一利用輻射系統之輻射投影光束： -使用圖案產生裝置，以便使該投影光束在其橫剖面 予圖案； -將該具有圖案的輻射光束投影到輻射敏感材料層之一 目標部分上，其中之步驟為： 在投影光束穿過之一區域中使一氣體離子化。 裝Providing a substrate, at least in part, covered by a layer of radiation-sensitive material; - providing a radiation projection beam using a radiation system: - using a pattern generating means to cause the projection beam to be patterned in its cross section; A patterned beam of radiation is projected onto a target portion of the layer of radiation-sensitive material, wherein the step is: ionizing a gas in a region through which the projected beam passes. Loading
儘管在本文中可特定參考使用根據本發明之裝置以製造 積體電路’應明確理解到的是，此—裝置具有許多其他可 行的應用。例如，其可用於整體光學系統的製造，導引與 偵測磁域記憶體、液晶顯示面板、薄膜磁頭等等之圖案。 熟諳此技藝之人士將體認到，在上下文的此 ，任何文中所使用的術言吾「標線」、「晶圓」或”模」中 應考慮分別由更為一般的術語「光罩」、「基材與「目 標部分」所取代。 在本文中，術語「輕射」與「光束」係用以包含所有種 類的電磁輻射，包括紫外線輻射.（例如波長為365、248、 193、157或126奈米）與EUV(遠紫外線輻射例如具有5〜2〇 奈米左右之波長）》 現在將僅藉由示範之方式，並參考所附之簡單圖式，說 明本發明之實施例，其中： 圖1顯示一根據本發明之一實施例的微影投影裝置； 圖2顯示該第一實施例中之一污染物障壁； -12- 1323832 A7 --------------B7 五、發明説明（9 ) ~ ' 圖3顯示根據本發明之一 s -眘 ^ 弟一貫施例的污染物障壁； 圖4顯示本發明之一第三實施例。 在該些圖式中，對應之參考符號表示對應的零件。 f施例1 圖1簡略的顯示根據本發明之_特定實施例的 影裝置。該裝置包括： ' 一輻射系統LA、IL，用以供應一輻射之投影光束pB (例 如遠紫外線輻射），其在此特定之案例中亦包括一輕射來 源LA ; 一第一物件檯（光罩檯）MT，其設置一光罩固持器用 以固持一光罩MA (例如一標線），並連接到第一定位裝置 PM ’以便準確地相對於物件pl定位該光罩； 一第二物件檯（基材檯）WT，其設置一基材固持器用 以固持一基材W (例如塗佈抗蝕劑之矽晶圓），並連接到 第二定位裝置PW，以便準確地對於物件PL定位該基材； 一投影系統（「鏡頭」）PL (例如折射、折射反射或反 射系統）’用以將該光罩MA之照射部分成像到該基材w之 一目標部分C(例如包括一個或更多的印模）上。 如此處之顯示，該裝置係為一反射式裝置（亦即具有一 反射光罩_)。然而，一般而言，其亦可例如為一傳遞式裝 置（具有一傳遞光罩）。或者，該裝置亦使用其他種類的 圖案產生裝置，諸如一上述種類之可程式控制的鏡子陣列。 來源LA (例如一雷射產生之電漿來源、一放電電漿來源 GC3188__ 本紙張尺度適用中國國家標準(CNS) A4规格（210X297公釐〉 1323832 A7 B7 五、發明説明（10 ) ，或是繞著貯存環或同步加速器中一電子光束的路徑設 置的一聚頻或增頻磁鐵）產生一輻射光束。此光束係直接 地或在穿過調整裝置（諸如一光束膨脹器Εχ)之後引入一 照明系統（照明器）IL，該照明器IL可包括調整裝置ΑΜ , 用以設定II光束中之強度分佈的外部且/或内部放射範圍 (普遍分別稱之為σ -外部與<7 -内部）。另外，其通常包 括許多其他的组件，諸如一整流器ΙΝ與聚光器以此方 式，照射於光罩MA上之該光束PB在其橫剖面中具有所需 的均勻度與強度分佈。 關於圖1應注意的是，該來源la可位於微影投影裝置之 外罩中（通常來源L A係為例如一水銀燈的案例），但其亦 可遠離該微影投影裝置，由該來源所產生之輻射光束係引 入裝置中（例如以適當的導引鏡子加以協助），後者之情 形通常該來源LA係為一受激準分子雷射。本發明與申請專 利範圍包含這些案例。 光束PB接著截住光罩MA ’該光罩係固持於一光罩檯MT 之上》由光罩ΜΑ選擇性地加以反射，該光束pB通過鏡頭 PL，該鏡頭將光束ρβ聚焦於該基材w之—目標部分c上。 在第二定位裝置PW (與干涉儀測量裝置if )的協助下，能 夠準確地移動該基材檯WT，以便例如在光束PB之路徑中 定位不同的目標部分C»同樣地，該第一定位裝置pM能夠 用來相對於光束PB路徑準確地定位光罩MA (例如在光罩 MA從一光罩庫機械縮回之後，或是在掃描期間）。_般而 言’在長行程模組（路線定位）以及一短行程模組（細微 (ms3- -14 本纸張尺度適用中圉國家標準(CNS) A4規格(210 X 297公釐） 1323832 A7 __B7 五、發明説明（H ) 定位）的協助下，能夠實現物件檯MT、WT之移動，圖1中 並未明確地顯示該些模組。然而，在晶圓階段器的案例中 (與一階段掃描裝置相反），該光罩檯MT能夠僅連接到一 短行程引動器，或是加以固定。 所顯示之裝置可用於兩種不同的模式： 在階段模式中，該光罩檯MT基本上係維持不動，且一整 個光罩影像係一次投影（亦即一單次「閃光」）到一目標 部分C之上。基材檯WT接著係在X及/或y方向偏移，以致於 使光束PB能夠照射不同的目標部分C ; 在掃描模式中，除了一特定之目標部分C並非在一單次 「閃光」中曝光以外，其基本上使用相同的情況。取而代 之的是，該光罩檯MT能夠在一特定方向（所謂的「掃描方 向」’例如y方向）中以一速度v移動，以致於使該光束PB 掃描過整個光罩影像；同時，該基材檯WT係同步在相同或 相反方向以速度V=Mv移動，其中Μ係為鏡頭PL之放大率（ 通常Μ= 1/4或1/5 )。以此方式，能夠使一相對大的目標部 分C曝光，而無須在解析度方面做出妥協。 輻射來源L A '照明系統IL與投影系統PL能夠包含於一個 別的室（「箱」）之中，其係以投影光束之輻射可穿透的 一氣體加以排空或沖洗。該投影光束係透過室壁中之開孔 從不同的室之間通過，圖2中更為詳細的顯示用以使投影光 束PB從輻射來源LA通到照明系統IL之佈置。 除了產生所需要輻射之投影光束PB以外，位於該輻射來 源LA之中的放射來源1〇會放射出一污染物顆粒束11(尤其 ιαα. 15- 本纸張尺趸適用中國國家標準(CNS) Α4规格(21〇x 297公爱·) 1323832 A7 B7 五、發明説明（13 可設置於該管子13 0之潔淨（昭明李这、7 , ‘、乎、‘.·、月系統）側。該線圈^ 3 7產 生-磁場，.其截留自由電子’增加任何朝該顆粒截留器之 潔淨側移動的氣H之料化。該料錢料㈣吸附回 吸收板U3,引發-反向之氣體流。亦可提供稍微高於該電 子來源132之電位（例如13〇伏特），以協助截留電子。從 該輻射來源10放射出來的帶負電顆粒亦將截留於該電子截 .留器中，且有助於氣體之離子化，從而避免損壞該照明系 統中的光學元件（例如鏡子MR )與其上之沉澱。 由於輻射來源之操作與任何其他的理由能使該氣體離子 化，或疋可經由供應裝置14加以供應以達成此目的。 實施例2 除了藉著產生一電漿使氣體離子化，與使用兩極擴散以 移出污染物以外，本發明之第二實施例係與第一實施例類 似。圖3顯示用以產生電漿之佈置，其取代圖2中所顯示之 離子化裝置。 在此實施例中，藉由一電漿產生裝置51產生一惰性氣體 之電漿56’該電漿產生裝置使用例如電容與感應耦合RF放 電、或一頻率為10kHz到20MHz之A/C放電。電漿56中之電 能較佳應為10到20eV，或是在高度準穩定狀態中應具有高 濃度之電_子。儘管在該電漿56中可使用其他的氣體，惰性 氣體係相當適當之氣體，且尤其是提供氦（He)與氬（Ar )，用以有效的離子化。 如圖3中所示，電漿56係位於一管子52之中，該管子具有 之長度L大於寬度D»由於其高溫，該些電子快速地擴散， -17- 本纸《尺度適用中固圉家標準(CNS) Α4規格(210X297公爱） A7 B7 五、發明説明（14 卫·係藉由該管子52之壁部加以截留。因此在缺乏電子之電 聚56與電子充沛的管子52壁部之間產生一電荷極化現象， 導致留在該電漿56中之離子附著到管子52之壁部，且離開 琢投影光束PB。該電漿56因而有效的使任何污染物（例如 存在污染物流中之鋰Li與其他金屬）產生離子化，如先前 之說明’其接著優先且非常有效地朝管子52之壁部擴散。 第—實施例中之吸收板與排斥板能夠與第二實施例之電 衆離子淨化器一起使用，但並非必要，因為兩極擴散便能 夠足以移除該些污染物。 實施体p 在本發明之第三實施例中，除了以下之說明以外，其與 本發明之第一與第二實施例相同。設置一淨化氣體流，以 攔截朝向該照明系統之污染物流。 一淨化氣體供應器1 4供應潔淨、乾燥的淨化氣體到位於 該管子13之内壁中的出口（未顯示），以便在管予之下游 建立一朝向該輻射來源LA之淨化氣體流15 ^該淨化氣體可 為例如一純的鈍性或惰性氣體，或是此等氣體之混合氣體 ’其對於輕射之投影光束具有最小的吸收係數。 該淨化氣體流1 5截住並掃除污染物顆粒束丨丨之顆粒，且 將該些顆粒帶離照明系統IL »排氣系統16係設置於輻射來 源L· A與照明系統IL之間的投影光束p B之任一側，以移除兮 淨化氣體流與所夾帶的污染物顆粒。該排氣系統16中之真 芝泵以充足之速率抽出該淨化氣體，以確保該投影光束穿 過之區域中的氣體壓力維持在夠低的程度，以避免該投影 -18- 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1^23832 A7 B7 15 五、發明説明（ 光束產生不希望發生的減弱強度，同時使該淨化氣體足以 掃除並抽出污染顆粒。該排氣系統16可為輻射系統室之零 件’或是安置於該輻射系統室之上或與其分離，從而產生 一更為有效的污染物障壁。 應體認的是，儘管在以上之實施例中，該污染物障壁（ 亦稱之為一顆粒截留器）係顯示位於輻射來源LA與照明系 統IL之間’ 一顆粒截留器可另外或額外放置於照明系統IL 與投影系統PL之間、在分開的照明器室之間、在基材與投 影系統之間’以減輕由於抗蝕劑滲氣所產生之雜質，或是 通常放置於微影裝置中的任何「污染」與「潔淨」環境之 間》 儘管已經說明本發明之特定實施例，應體認到能夠以不 同於說明之方式來實行本發明，本說明不預計來限制本發 明。 L G0fil94_ 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 1323832 A7 B7 五、發明説明（16 ) 元件標號對照表 AM :調整裝置 BP ： C :目標部分 C0 :聚光器 Ex :光束膨脹器 IF :干涉儀測量裝置 IL :照明系統 IN :整流器 LA :輻射來源 MA :光罩 Ml : M2 ： MT :光罩檯 PB :投影光束 PM :第一定位裝置 WT :基材檯 PW :第二定位裝置 P1 ： P2 ： W :基材 PL :鏡頭 MR :鏡子 009195 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1323832 A7 B7 五、發明説明（17 ) 10 ： 放射來源 11 ： 污染物顆粒束 12 ： 照明系統室 13 ： 管子 14 ： 淨化氣體供應器 15 ： 淨化氣體流 16 ： 排氣系統 51 ： 電漿產生裝置 52 ： 管子 56 ： 電漿 130 :管子 13 1 132 :電子來源 133 :吸收板 134 :電壓來源 135 :排斥板 136 :電壓·來源 137 :線圈 150 :帶正電之離子與顆粒 151 :帶電之顆粒 -21 - 用中國國家標準(CNS) A4規格(210 x 297公釐)Although a device according to the present invention may be specifically referenced herein for making an integrated circuit', it should be expressly understood that the device has many other useful applications. For example, it can be used in the manufacture of integral optical systems, guiding and detecting patterns of magnetic domain memory, liquid crystal display panels, thin film magnetic heads, and the like. Those skilled in the art will recognize that, in this context, the term "mask", "wafer" or "model" used in any of the texts should be considered in the more general term "mask". , "Substrate and "target part" replaced. As used herein, the terms "light shot" and "beam" are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (eg, wavelengths of 365, 248, 193, 157, or 126 nm) and EUV (for far ultraviolet radiation, for example). Having a wavelength of about 5 to 2 nanometers.) Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which: FIG. a lithography projection device; Figure 2 shows a contaminant barrier in the first embodiment; -12- 1323832 A7 -------------- B7 V. Invention Description (9) ~ ' Fig. 3 shows a contaminant barrier according to one of the embodiments of the present invention; Fig. 4 shows a third embodiment of the present invention. In the drawings, corresponding reference characters indicate corresponding parts. f Example 1 Figure 1 shows schematically a shadow device in accordance with a particular embodiment of the present invention. The apparatus comprises: 'a radiation system LA, IL for supplying a projection beam pB of radiation (e.g., far ultraviolet radiation), which in this particular case also includes a light source LA; a first object stage (light) a cover table MT, which is provided with a reticle holder for holding a reticle MA (for example, a marking line) and connected to the first positioning device PM' to accurately position the reticle relative to the object pl; a second object a substrate (substrate table) WT, which is provided with a substrate holder for holding a substrate W (for example, a resist-coated wafer) and connected to the second positioning device PW for accurately positioning the object PL a substrate; a projection system ("lens") PL (eg, a refractive, refractive reflection or reflection system) to image the illuminated portion of the reticle MA to a target portion C of the substrate w (eg, including one or More impressions). As shown here, the device is a reflective device (i.e., has a reflective mask). In general, however, it can also be, for example, a transfer device (having a transfer mask). Alternatively, the device also uses other types of pattern generating devices, such as a programmable array of mirrors of the above type. Source LA (for example, a laser source generated by a laser, a discharge plasma source GC3188__ This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm > 1323832 A7 B7 V. Invention Description (10), or around A collecting or boosting magnet disposed in the storage ring or in the path of an electron beam in the synchrotron generates a radiation beam that is introduced directly or after passing through an adjustment device such as a beam expander. a system (illuminator) IL, which may include an adjustment device ΑΜ for setting an external and/or internal radiation range of the intensity distribution in the II beam (commonly referred to as σ-outer and <7-inside, respectively) In addition, it typically includes a number of other components, such as a rectifier ΙΝ and concentrator in such a manner that the beam PB impinging on the reticle MA has the desired uniformity and intensity distribution in its cross section. 1 It should be noted that the source la may be located in the outer cover of the lithographic projection device (usually the source LA is a case of, for example, a mercury lamp), but it may also be away from the lithographic projection device. The radiation beam produced by the source is introduced into the device (for example, assisted by a suitable guiding mirror), which is typically the case where the source LA is an excimer laser. These inventions are covered by the invention and the scope of the application. PB then intercepts the reticle MA 'the reticle is held on a reticle stage MT" selectively reflected by the reticle, which passes through the lens PL, which focuses the beam ρβ on the substrate w On the target part c. With the aid of the second positioning device PW (with the interferometer measuring device if), the substrate table WT can be moved accurately, for example to position different target parts C» in the path of the light beam PB Likewise, the first positioning device pM can be used to accurately position the reticle MA relative to the beam PB path (eg, after the reticle MA is mechanically retracted from a reticle library, or during scanning). 'In the long stroke module (route positioning) and a short stroke module (subtle (ms3- -14 paper size applicable Chinese national standard (CNS) A4 specification (210 X 297 mm) 1323832 A7 __B7 V. Invention Description (H) positioning) With the assistance, the movement of the object table MT and WT can be realized, and the modules are not explicitly shown in Fig. 1. However, in the case of the wafer stager (as opposed to the one-stage scanning device), the mask table MT Can be connected to only a short-stroke actuator or fixed. The device shown can be used in two different modes: In the stage mode, the reticle stage MT remains essentially stationary and an entire reticle image system a projection (that is, a single "flash") onto a target portion C. The substrate table WT is then offset in the X and / or y directions so that the beam PB can illuminate different target portions C; In the scan mode, except that a specific target portion C is not exposed in a single "flash", it basically uses the same situation. Instead, the mask table MT can be moved at a speed v in a particular direction (so-called "scanning direction", eg y direction) such that the beam PB is scanned across the entire mask image; The WT system is synchronized in the same or opposite direction at a speed of V = Mv, where the enthalpy is the magnification of the lens PL (typically Μ = 1/4 or 1/5). In this way, a relatively large target portion C can be exposed without having to compromise on resolution. Radiation source L A 'The illumination system IL and projection system PL can be contained in a separate chamber ("box") that is emptied or flushed with a gas that the radiation of the projection beam can penetrate. The projected beam passes through the apertures in the chamber wall from between the different chambers, and the arrangement of the projection beam PB from the radiation source LA to the illumination system IL is shown in more detail in FIG. In addition to the projection beam PB that produces the required radiation, a source of radiation located in the source of radiation LA emits a bundle of contaminant particles 11 (especially ιαα. 15- This paper size applies to the Chinese National Standard (CNS) Α4 specifications (21〇x 297 public love) 1323832 A7 B7 V. Invention description (13 can be set on the side of the pipe 13 0 clean (Zhao Ming Li this, 7 , ',,, '.·, month system) side. The coil ^ 3 7 generates a magnetic field, which traps the free electrons 'increasing any material H moving toward the clean side of the particle trap. The material (4) is adsorbed back to the absorption plate U3, causing the reverse gas flow A potential slightly higher than the electron source 132 (e.g., 13 volts) may be provided to assist in trapping electrons. Negatively charged particles emitted from the source 10 will also be trapped in the electron interceptor and have Helps the ionization of the gas, thereby avoiding damage to the optical components (such as the mirror MR) in the illumination system and the precipitation thereon. The operation of the radiation source can ionize the gas for any other reason, or can be supplied via the supply device 14 to supply This object is achieved. Embodiment 2 The second embodiment of the present invention is similar to the first embodiment except that a gas is ionized by the generation of a plasma and a diffusion of the two electrodes is used to remove the contaminant. The arrangement of the plasma replaces the ionization device shown in Fig. 2. In this embodiment, a plasma 56' of an inert gas is generated by a plasma generating device 51. The plasma generating device uses, for example, a capacitor and an induction. Coupling RF discharge, or A/C discharge with a frequency of 10 kHz to 20 MHz. The power in the plasma 56 should preferably be 10 to 20 eV, or should have a high concentration of electricity in a highly quasi-stable state. Other gases may be used in the plasma 56. The inert gas system is a relatively suitable gas, and in particular, helium (He) and argon (Ar) are provided for efficient ionization. As shown in Figure 3, the plasma 56 It is located in a tube 52 having a length L greater than the width D» due to its high temperature, the electrons rapidly diffuse, -17- This paper is applicable to the standard (CNS) Α4 specification (210X297 public) Love) A7 B7 V. Invention Description (14 Wei Department The wall portion of the tube 52 is trapped. Thus, a charge polarization phenomenon occurs between the wall portion of the tube 52 lacking electrons and the electron-rich tube 52, causing ions remaining in the plasma 56 to adhere to the tube 52. The wall portion and away from the pupil projection beam PB. The plasma 56 thus effectively ionizes any contaminants (e.g., lithium Li in the presence of contaminant streams and other metals), as previously explained 'which is then preferred and very effective Dispersing toward the wall of the tube 52. The absorbing plate and the repeller plate of the first embodiment can be used together with the ion plasma purifier of the second embodiment, but it is not necessary because the diffusion of the two poles can be sufficient to remove the pollution. Things. Embodiment p In the third embodiment of the present invention, it is the same as the first and second embodiments of the present invention except for the following description. A flow of purge gas is provided to intercept the flow of contaminants toward the illumination system. A purge gas supply 14 supplies a clean, dry purge gas to an outlet (not shown) located in the inner wall of the tube 13 to establish a purge gas stream 15 toward the radiation source LA downstream of the tube The gas can be, for example, a pure passive or inert gas, or a mixture of such gases - which has a minimum absorption coefficient for a light projected beam. The purge gas stream 15 intercepts and sweeps the particles of the contaminant particle bundle and carries the particles away from the illumination system IL » the exhaust system 16 is disposed between the radiation source L·A and the illumination system IL Either side of beam p B to remove the helium purge gas stream and the entrained contaminant particles. The pump in the exhaust system 16 draws the purge gas at a sufficient rate to ensure that the gas pressure in the region through which the projected beam passes is maintained at a low enough level to avoid the projection. Applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 1^23832 A7 B7 15 V. INSTRUCTIONS (The beam produces an undesired weakening intensity while the purge gas is sufficient to sweep and extract contaminating particles. The gas system 16 can be either a part of the radiation system chamber or disposed on or separate from the radiation system chamber to create a more effective contaminant barrier. It should be appreciated that, in the above embodiments, The contaminant barrier (also referred to as a particle trap) is shown between the radiation source LA and the illumination system IL. A particle trap can be additionally or additionally placed between the illumination system IL and the projection system PL, in a separate Between the illuminator chambers, between the substrate and the projection system 'to reduce the impurities generated by the outgas of the resist, or any "contamination" and "clean" that are usually placed in the lithography apparatus. The present invention has been described with respect to the specific embodiments of the present invention, and it should be understood that the invention may be practiced otherwise than as illustrated. The description is not intended to limit the invention. L G0fil94_ This paper scale applies to Chinese national standards ( CNS) A4 specification (210X297 public) 1323832 A7 B7 V. Description of invention (16) Component reference table AM: Adjustment device BP: C: Target part C0: Concentrator Ex: Beam expander IF: Interferometer measuring device IL : Illumination system IN : Rectifier LA : Radiation source MA : Mask Ml : M2 : MT : Mask table PB : Projection beam PM : First positioning device WT : Substrate table PW : Second positioning device P1 : P2 : W : Substrate PL: Lens MR: Mirror 009195 This paper scale applies to Chinese National Standard (CNS) A4 size (210 X 297 mm) 1323832 A7 B7 V. Invention description (17) 10 : Radiation source 11: Contaminant particle bundle 12 : Lighting system room 13 : Pipe 14 : Purging gas supply 15 : Purifying gas flow 16 : Exhaust system 51 : Plasma generating device 52 : Pipe 56 : Plasma 130 : Pipe 13 1 132 : Source of electrons 133 : Absorption plate 134 : Voltage source 135 : Repellent plate 136 : Voltage · Source 137 : Coil 150 : Positively charged ions and particles 151 : Charged particles - 21 - With Chinese National Standard (CNS) A4 specification (210 x 297 mm PCT)