JP5535194B2 - リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 - Google Patents

リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 Download PDF

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JP5535194B2
JP5535194B2 JP2011505407A JP2011505407A JP5535194B2 JP 5535194 B2 JP5535194 B2 JP 5535194B2 JP 2011505407 A JP2011505407 A JP 2011505407A JP 2011505407 A JP2011505407 A JP 2011505407A JP 5535194 B2 JP5535194 B2 JP 5535194B2
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Japan
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patterning device
radiation beam
lithographic apparatus
cleaning
cleaning electrode
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Expired - Fee Related
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JP2011505407A
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Japanese (ja)
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JP2011519156A5 (enExample
JP2011519156A (ja
Inventor
スキャカバロッツィ,ルイージ
イワノフ,ウラジミール,ビターレビッチ
コシェレブ,コンスタンチン,ニコラエビッチ
モールス,ヨハネス,フベルトゥス,ヨセフィナ
スティーブンズ,ルーカス,ヘンリカス,ヨハネス
アンツィフェロブ,パベル,スタニスラボビッチ
クリブツン,ブラディミア,ミハイロビッチ
ドロヒン,レオニード,アレキサンドロビッチ
カンペン,マールテン ヴァン
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エーエスエムエル ネザーランズ ビー.ブイ.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011505407A 2008-04-23 2009-04-16 リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 Expired - Fee Related JP5535194B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7134508P 2008-04-23 2008-04-23
US61/071,345 2008-04-23
PCT/EP2009/002782 WO2009129960A1 (en) 2008-04-23 2009-04-16 Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device

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JP2011519156A JP2011519156A (ja) 2011-06-30
JP2011519156A5 JP2011519156A5 (enExample) 2012-06-07
JP5535194B2 true JP5535194B2 (ja) 2014-07-02

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JP2011505407A Expired - Fee Related JP5535194B2 (ja) 2008-04-23 2009-04-16 リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法

Country Status (7)

Country Link
US (1) US20110037960A1 (enExample)
JP (1) JP5535194B2 (enExample)
KR (1) KR20110005288A (enExample)
CN (1) CN102016723A (enExample)
NL (1) NL1036769A1 (enExample)
TW (1) TWI453545B (enExample)
WO (1) WO2009129960A1 (enExample)

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US9539622B2 (en) * 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
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US10209635B2 (en) 2014-12-31 2019-02-19 Asml Holding N.V. Lithographic apparatus with a patterning device environment
JP6702672B2 (ja) * 2015-09-03 2020-06-03 キヤノン株式会社 インプリント装置、物品の製造方法及び供給装置
KR20180098784A (ko) 2017-02-27 2018-09-05 김창연 기도용 텐트
US11086238B2 (en) * 2017-06-29 2021-08-10 Asml Netherlands B.V. System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support
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JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
CN110899246A (zh) * 2018-09-14 2020-03-24 长鑫存储技术有限公司 光罩缺陷的清洁装置及清洁方法
CN111061129B (zh) * 2018-10-17 2022-11-01 台湾积体电路制造股份有限公司 光刻系统及清洁光刻系统的方法
KR102614546B1 (ko) * 2018-11-09 2023-12-14 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치 내의 지지부를 청결하게 하는 장치 및 방법
CN119493333A (zh) * 2018-11-27 2025-02-21 Asml荷兰有限公司 隔膜清洁设备
WO2020123038A1 (en) 2018-12-10 2020-06-18 Applied Materials, Inc. Attachment feature removal from photomask in extreme ultraviolet lithography application
KR102813711B1 (ko) * 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
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KR20220084055A (ko) * 2019-10-18 2022-06-21 에이에스엠엘 네델란즈 비.브이. 멤브레인 세정 장치
KR102788879B1 (ko) 2019-10-30 2025-04-01 삼성전자주식회사 극자외선 노광 시스템
US11294292B2 (en) * 2019-12-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removing assembly and method of cleaning mask for lithography
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CN117111409A (zh) * 2022-05-16 2023-11-24 成都高真科技有限公司 一种降低掩膜残留物影响的方法及装置
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Also Published As

Publication number Publication date
TW200949458A (en) 2009-12-01
NL1036769A1 (nl) 2009-10-26
US20110037960A1 (en) 2011-02-17
CN102016723A (zh) 2011-04-13
KR20110005288A (ko) 2011-01-17
JP2011519156A (ja) 2011-06-30
TWI453545B (zh) 2014-09-21
WO2009129960A1 (en) 2009-10-29

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