NL1021816A1 - Belichtingswerkwijze en belichtingsinrichting. - Google Patents

Belichtingswerkwijze en belichtingsinrichting.

Info

Publication number
NL1021816A1
NL1021816A1 NL1021816A NL1021816A NL1021816A1 NL 1021816 A1 NL1021816 A1 NL 1021816A1 NL 1021816 A NL1021816 A NL 1021816A NL 1021816 A NL1021816 A NL 1021816A NL 1021816 A1 NL1021816 A1 NL 1021816A1
Authority
NL
Netherlands
Prior art keywords
exposure
exposure device
exposure method
Prior art date
Application number
NL1021816A
Other languages
English (en)
Other versions
NL1021816C2 (nl
Inventor
Tadahito Fujisawa
Masafumi Asano
Tatsuhiko Higashiki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1021816A1 publication Critical patent/NL1021816A1/nl
Application granted granted Critical
Publication of NL1021816C2 publication Critical patent/NL1021816C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
NL1021816A 2001-11-02 2002-11-01 Belichtingswerkwijze en belichtingsinrichting. NL1021816C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001338169A JP4191923B2 (ja) 2001-11-02 2001-11-02 露光方法および露光装置
JP2001338169 2001-11-02

Publications (2)

Publication Number Publication Date
NL1021816A1 true NL1021816A1 (nl) 2003-05-07
NL1021816C2 NL1021816C2 (nl) 2003-10-14

Family

ID=19152702

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1021816A NL1021816C2 (nl) 2001-11-02 2002-11-01 Belichtingswerkwijze en belichtingsinrichting.

Country Status (6)

Country Link
US (1) US6813001B2 (nl)
JP (1) JP4191923B2 (nl)
KR (1) KR100512838B1 (nl)
CN (1) CN1282040C (nl)
NL (1) NL1021816C2 (nl)
TW (1) TW588410B (nl)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3780221B2 (ja) * 2002-03-26 2006-05-31 キヤノン株式会社 露光方法及び装置
JP4174324B2 (ja) * 2003-01-06 2008-10-29 キヤノン株式会社 露光方法及び装置
JP2004296939A (ja) * 2003-03-27 2004-10-21 Toshiba Corp 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム
JP4125177B2 (ja) * 2003-05-16 2008-07-30 キヤノン株式会社 露光装置
TWI616932B (zh) * 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
SG109607A1 (en) * 2003-09-05 2005-03-30 Asml Masktools Bv Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
JP4684563B2 (ja) * 2004-02-26 2011-05-18 キヤノン株式会社 露光装置及び方法
WO2006013100A2 (en) 2004-08-06 2006-02-09 Carl Zeiss Smt Ag Projection objective for microlithography
KR100621552B1 (ko) 2004-09-02 2006-09-19 삼성전자주식회사 렌즈 특성이 반영된 포커싱 및 레벨링이 가능한 투영 렌즈유니트, 그를 포함하는 노광 장비 및 렌즈 특성이 반영된포커싱 및 레벨링 조절 방법
US7474384B2 (en) * 2004-11-22 2009-01-06 Asml Holding N.V. Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus
TWI402890B (zh) * 2005-01-24 2013-07-21 尼康股份有限公司 Measurement methods, measurement systems, inspection methods, inspection systems, exposure methods and exposure systems
US7221434B2 (en) * 2005-03-01 2007-05-22 Canon Kabushiki Kaisha Exposure method and apparatus
US7525638B2 (en) * 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8194242B2 (en) * 2005-07-29 2012-06-05 Asml Netherlands B.V. Substrate distortion measurement
JP2007048794A (ja) * 2005-08-08 2007-02-22 Japan Steel Works Ltd:The レーザ投影装置
US20070165131A1 (en) * 2005-12-12 2007-07-19 Ess Technology, Inc. System and method for measuring tilt of a sensor die with respect to the optical axis of a lens in a camera module
KR100711003B1 (ko) * 2005-12-28 2007-04-24 동부일렉트로닉스 주식회사 노광 장치용 웨이퍼 스테이지의 경사 조정 장치 및 그 조정방법
US7894038B2 (en) * 2007-03-14 2011-02-22 Asml Netherlands B.V. Device manufacturing method, lithographic apparatus, and a computer program
US7924405B2 (en) * 2007-07-27 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Compensation of reticle flatness on focus deviation in optical lithography
JP2009031169A (ja) * 2007-07-28 2009-02-12 Nikon Corp 位置検出装置、露光装置、及びデバイスの製造方法
JP5247375B2 (ja) * 2008-11-25 2013-07-24 キヤノン株式会社 露光装置及びデバイス製造方法
EP2219077A1 (en) 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
NL2006190A (en) 2010-03-11 2011-09-13 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
DE102010041562A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zur mikrolithographischen Belichtung
DE102010041556A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie und Verfahren zur mikrolithographischen Abbildung
NL2008083A (nl) * 2011-03-02 2012-09-04 Asml Netherlands Bv Lithographic apparatus and method.
NL2009844A (en) * 2011-12-22 2013-06-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9389520B2 (en) 2012-02-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography with leveling sensor
US9939734B2 (en) 2014-04-23 2018-04-10 Kulicke & Soffa Liteq B.V. Photolithography apparatus comprising projection system for control of image size
CN105185703B (zh) * 2014-06-18 2019-09-17 上海华力微电子有限公司 一种晶圆边缘找平的方法
US11143862B2 (en) * 2016-03-30 2021-10-12 Nikon Corporation Pattern drawing device, pattern drawing method, and method for manufacturing device
US10664714B2 (en) * 2016-12-21 2020-05-26 Rudolph Technologies, Inc. Substrate handling and identification mechanism
JP7137363B2 (ja) * 2018-06-11 2022-09-14 キヤノン株式会社 露光方法、露光装置、物品の製造方法及び計測方法
CN111060294B (zh) * 2019-12-31 2022-04-12 茂莱（南京）仪器有限公司 一种荧光显微物镜综合测试平台
KR20220078755A (ko) 2020-12-03 2022-06-13 삼성전자주식회사 오버레이 보정 방법, 오버레이 보정에 대한 평가 방법 및 오버레이 보정 방법을 포함하는 반도체 소자의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3374991B2 (ja) * 1993-06-14 2003-02-10 株式会社ニコン 投影光学系の調整方法、露光方法、及び露光装置
US6333776B1 (en) * 1994-03-29 2001-12-25 Nikon Corporation Projection exposure apparatus
JP3261960B2 (ja) 1995-12-15 2002-03-04 キヤノン株式会社 走査型露光装置及びそれを用いたデバイス製造方法
JPH09180989A (ja) 1995-12-26 1997-07-11 Toshiba Corp 露光装置および露光方法
JP3495868B2 (ja) 1996-12-11 2004-02-09 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP3728613B2 (ja) 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US6549271B2 (en) * 1997-01-28 2003-04-15 Nikon Corporation Exposure apparatus and method
US6522386B1 (en) * 1997-07-24 2003-02-18 Nikon Corporation Exposure apparatus having projection optical system with aberration correction element
JP2001168000A (ja) * 1999-12-03 2001-06-22 Nikon Corp 露光装置の製造方法、および該製造方法によって製造された露光装置を用いたマイクロデバイスの製造方法

Also Published As

Publication number Publication date
JP2003142373A (ja) 2003-05-16
JP4191923B2 (ja) 2008-12-03
NL1021816C2 (nl) 2003-10-14
CN1282040C (zh) 2006-10-25
TW588410B (en) 2004-05-21
KR100512838B1 (ko) 2005-09-07
US20030090640A1 (en) 2003-05-15
US6813001B2 (en) 2004-11-02
KR20030036084A (ko) 2003-05-09
CN1416019A (zh) 2003-05-07
TW200300269A (en) 2003-05-16

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Legal Events

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20030612

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20130601