NL1022018A1 - Belichtingswerkwijze. - Google Patents

Belichtingswerkwijze.

Info

Publication number
NL1022018A1
NL1022018A1 NL1022018A NL1022018A NL1022018A1 NL 1022018 A1 NL1022018 A1 NL 1022018A1 NL 1022018 A NL1022018 A NL 1022018A NL 1022018 A NL1022018 A NL 1022018A NL 1022018 A1 NL1022018 A1 NL 1022018A1
Authority
NL
Netherlands
Prior art keywords
exposure method
exposure
Prior art date
Application number
NL1022018A
Other languages
English (en)
Other versions
NL1022018C2 (nl
Inventor
Manabu Takakuwa
Keita Asanuma
Tatsuhiko Higashiki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1022018A1 publication Critical patent/NL1022018A1/nl
Application granted granted Critical
Publication of NL1022018C2 publication Critical patent/NL1022018C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1022018A 2001-11-28 2002-11-28 Belichtingswerkwijze. NL1022018C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001363133A JP3626448B2 (ja) 2001-11-28 2001-11-28 露光方法
JP2001363133 2001-11-28

Publications (2)

Publication Number Publication Date
NL1022018A1 true NL1022018A1 (nl) 2003-06-02
NL1022018C2 NL1022018C2 (nl) 2003-10-28

Family

ID=19173532

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1022018A NL1022018C2 (nl) 2001-11-28 2002-11-28 Belichtingswerkwijze.

Country Status (6)

Country Link
US (1) US6842230B2 (nl)
JP (1) JP3626448B2 (nl)
KR (1) KR100536545B1 (nl)
CN (1) CN1216403C (nl)
NL (1) NL1022018C2 (nl)
TW (1) TW569478B (nl)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440612B1 (en) 1999-09-01 2002-08-27 Micron Technology, Inc. Field correction of overlay error
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US8614427B1 (en) * 2002-07-15 2013-12-24 Kla-Tencor Corporation Suspended membrane calibration sample
JP2004296939A (ja) * 2003-03-27 2004-10-21 Toshiba Corp 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム
WO2005008752A1 (ja) * 2003-07-23 2005-01-27 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
CN1318914C (zh) * 2003-09-22 2007-05-30 南亚科技股份有限公司 制作晶圆试片的方法及评估掩膜图案间迭对位准的方法
US7463367B2 (en) * 2004-07-13 2008-12-09 Micron Technology, Inc. Estimating overlay error and optical aberrations
JP4775541B2 (ja) * 2005-05-23 2011-09-21 日立造船株式会社 撮影画像における歪曲収差補正方法
JP4775540B2 (ja) * 2005-05-23 2011-09-21 日立造船株式会社 撮影画像における歪曲収差補正方法
CN100428058C (zh) * 2005-06-03 2008-10-22 中国科学院上海光学精密机械研究所 光刻机投影物镜奇像差原位检测方法
JP2007027429A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 露光装置補正システム、露光装置補正方法、及び半導体装置の製造方法
TWI345685B (en) * 2005-09-06 2011-07-21 Asml Netherlands Bv Lithographic method
US8050793B1 (en) 2006-04-04 2011-11-01 Advanced Micro Devices, Inc. Method and apparatus for linking reticle manufacturing data
US7194328B1 (en) * 2006-04-04 2007-03-20 Advanced Micro Devices, Inc. Method and apparatus for tracking reticle history
JP2007324371A (ja) * 2006-06-01 2007-12-13 Ebara Corp オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク
US7842442B2 (en) * 2006-08-31 2010-11-30 Advanced Micro Devices, Inc. Method and system for reducing overlay errors within exposure fields by APC control strategies
DE102007038702A1 (de) * 2006-08-31 2008-07-31 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum Reduzieren der Überlagerungsfehler in Belichtungsfeldern mittels APC-Steuerungsstrategien
JP2009071194A (ja) * 2007-09-14 2009-04-02 Canon Inc 半導体製造装置、半導体製造方法及びデバイス製造方法
IL210832A (en) * 2010-02-19 2016-11-30 Asml Netherlands Bv Lithographic facility and method of manufacturing facility
NL2006336A (en) * 2010-04-29 2011-11-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5655626B2 (ja) * 2011-02-24 2015-01-21 ソニー株式会社 画像処理装置、および画像処理方法、並びにプログラム
CN102692820B (zh) * 2011-03-21 2014-12-17 上海微电子装备有限公司 一种测量投影物镜畸变的装置及方法
US10474045B2 (en) 2015-07-13 2019-11-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2017120A (en) * 2015-07-16 2017-01-17 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP6908693B2 (ja) 2016-09-12 2021-07-28 エーエスエムエル ネザーランズ ビー．ブイ． 構造の特性を決定する方法、検査装置、及びデバイス、製造方法
CN106707695B (zh) * 2016-11-28 2018-09-21 深圳凯世光研股份有限公司 一种基于主动聚焦的实时聚焦方法及装置
EP3376287A1 (en) * 2017-03-14 2018-09-19 ASML Netherlands B.V. Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
CN110168447B (zh) * 2017-06-22 2021-07-06 Asml荷兰有限公司 用于确定对指纹的贡献的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3289319B2 (ja) 1992-06-22 2002-06-04 株式会社ニコン リソグラフィ方法及び該方法を用いた露光装置、及び露光方法
JP3284641B2 (ja) * 1992-09-03 2002-05-20 ソニー株式会社 重ね合わせ精度測定機の測定条件の最適化方法、並びにアラインメントマーク形状あるいは露光装置におけるアラインメントマーク測定方式の最適化方法
US5402224A (en) * 1992-09-25 1995-03-28 Nikon Corporation Distortion inspecting method for projection optical system
JP3460984B2 (ja) 1993-02-26 2003-10-27 株式会社ニコン 投影露光方法及び露光装置
JPH09320933A (ja) 1996-05-28 1997-12-12 Nikon Corp 走査型露光装置
JPH1145842A (ja) 1997-07-24 1999-02-16 Nikon Corp 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法
JP3274396B2 (ja) * 1997-11-07 2002-04-15 株式会社東芝 パターン測定方法
WO1999036949A1 (fr) * 1998-01-16 1999-07-22 Nikon Corporation Procede d'exposition et systeme de lithographie, appareil d'exposition et son procede de fabrication
US6396569B2 (en) * 1999-09-02 2002-05-28 Texas Instruments Incorporated Image displacement test reticle for measuring aberration characteristics of projection optics
JP2001338860A (ja) 2000-05-26 2001-12-07 Nikon Corp 露光方法及びデバイス製造方法
JP2003031477A (ja) * 2001-07-17 2003-01-31 Hitachi Ltd 半導体装置の製造方法およびシステム
JP2003156832A (ja) * 2001-11-22 2003-05-30 Mitsubishi Electric Corp 収差計測用フォトマスク、収差計測方法、収差計測用装置および装置の製造方法

Also Published As

Publication number Publication date
JP2003163156A (ja) 2003-06-06
KR100536545B1 (ko) 2005-12-14
CN1421746A (zh) 2003-06-04
CN1216403C (zh) 2005-08-24
JP3626448B2 (ja) 2005-03-09
NL1022018C2 (nl) 2003-10-28
US20030117599A1 (en) 2003-06-26
TW200305292A (en) 2003-10-16
TW569478B (en) 2004-01-01
US6842230B2 (en) 2005-01-11
KR20030043733A (ko) 2003-06-02

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20030624

PD2B A search report has been drawn up
PD Change of ownership

Owner name: TOSHIBA MEMORY CORPORATION; JP

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: KABUSHIKI KAISHA TOSHIBA

Effective date: 20170719

MK Patent expired because of reaching the maximum lifetime of a patent

Effective date: 20221127