TW200305292A - Exposing method - Google Patents
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- TW200305292A TW200305292A TW091134620A TW91134620A TW200305292A TW 200305292 A TW200305292 A TW 200305292A TW 091134620 A TW091134620 A TW 091134620A TW 91134620 A TW91134620 A TW 91134620A TW 200305292 A TW200305292 A TW 200305292A
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- exposure
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- lithographic mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
200305292 ⑴ 玫、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 發明之技術領域 本發明係有關一種曝光方法，尤指半導體製造中生產 支援系統、曝光裝置的運用手法及管理手法。 先前技術 近年，開發有可使微影光罩與晶圓相互反向移動而進 行曝光之掃描曝光方式的光曝光裝置（以下，稱作掃描曝 光裝置），作為半導體微影所使用之曝光裝置，並作為可 使投影透鏡的直徑小型化者。 由掃描曝光裝置曝光所產生的誤差，有透鏡影像扭曲 誤差、載置台匹配誤差等。 透鏡方面，有各種固有稱作影像扭曲的失真，如此， 所轉印圖案的位置精確度從設計上可轉印的位置產生偏 移。當偏移量大時，會導致製品不良。 以不同曝光裝置重疊圖案而形成裝置時，由於二台不 同曝光裝置分別具有固有的誤差，故進行正確圖案的重 疊時，二台曝光裝置的組合必有相對的失真。 以同一曝光裝置重疊並形成圖案時，由於被重疊圖案 與重疊圖案的關係中各具有相同失真，故一般相對的不 會產生偏移。但是，拉開被重疊圖案的曝光製程與重疊 圖案的曝光製程之間隔，使誤差經時變化時，二個圖案 間會產生偏移。當二個圖案間的偏移量大時，會導致製 品不良。 200305292 (2) 發明說;明績頁丨 發明所欲解決之課題 組合二台曝光裝置重疊圖案時，二個圖案會產生偏移 。此外，即使使用同一裝置，利用影像扭曲的經時變化 ，二個圖案亦會產生偏移。當二個圖案間的偏移量大時 ，會有導致製品不良的問題產生。 本發明之目的，在於提供一種相對於被重疊層，於重 疊層進行圖案轉印時，可提升重疊精確度之曝光方法。 解決問題之手段 本發明為達成上述目的，係構成如下。 (1)本發明之曝光方法，使用有掃描曝光裝置，該裝置 可將載置微影光罩的微影光罩台與載置晶圓的晶圓台相 互朝反向移動，然後將前述晶圓與前述微影光罩朝掃描 方向相對移動而進行掃描曝光，且將前述晶圓台朝與前 述掃描方向正交之步進方向移動，接著以步進及重覆式 描畫法對前述晶圓進行曝光；曝光方法係包含以下步驟 :隨著所使用之各曝光裝置，將前導性晶圓上，於各照 射區内形成於曝光方向有四個以上，且於步進方向有四 個以上矩陣配置之複數標記的位置資訊予以檢出之步驟 :將由m — a層曝光時所使用的掃描曝光裝置得到的標記 位置資訊，與由m層曝光所使用的掃描曝光裝置得到的 標記位置資訊之各座標成份的差分予以運算之步驟；從 所運算之差分，求出各表示〇〜3次透鏡像差的參數之步 驟；依據所求出參數而獲得的校正參數校正透鏡像差， 以進行前述πι層曝光之步驟。 200305292 (3) 發明說明績頁: (2) 本發明之曝光方法，使用有掃描曝光裝置，該裝置 可將載置微影光罩的微影光罩台與載置晶圓的晶圓台相 互朝反向移動，然後將前述晶圓與前述微影光罩朝掃描 方向相對移動而進行掃描曝光，且將前述晶圓台朝與前 述掃描方向正交之步進方向移動，接著以步進及重覆式 描畫法對前述晶圓進行曝光；上述曝光方法係包含以下 步驟：將在晶圓上的m — a層，沿著前述掃描方向形成三 個以上標記的位置資訊與形成於m層曝光所使用的微影 光罩的標記位置資訊予以取得之步驟；計算二個位置資 訊的各座標成份的差分（dx，dy)之步驟；從所運算的差 分，求出各表示可隨微影光罩與晶圓的掃描方向移動的0 〜3次誤差的參數之步驟；依據所求出參數所得的校正參 數校正誤差，以進行前述m層曝光之步驟。 (3) 本發明之曝光方法，使用有掃描曝光裝置，該裝置 可將載置微影光罩的微影光罩台與載置晶圓的晶圓台相 互朝反向移動，然後將前述晶圓與前述微影光罩朝掃描 方向相對移動而進行掃描曝光，且將前述晶圓台朝與前 述掃描方向正交之步進方向移動，接著以步進及重覆式 描畫法對前述晶圓進行曝光；上述曝光方法係包含以下 步驟：將在晶圓上的m — a層，沿著前述掃描方向形成三 個以上標記的位置資訊與形成於m層曝光所使用的微影 光罩的標記位置資訊予以取得之步驟；從形成於前述m 一 a層的標記位置資訊求出各照射區的重心座標，並由形 成於m層的微影光罩的標記位置資訊求出照射區的重心 (4) (4)200305292 座標，以計算二個重心座標的差分（dx, dy)之步驟；七 所運算的差分，求出分別表示可隨前述晶圓步進方向從 動的〇〜3次誤差的參數之步驟；依據由所求出參數得= 的校正參數校正誤差，以進行前述m層曝光之步綠。于到 發明之實施形態 以下參照圖面說明本發明之實施形態。 (第一實施形態） 提升照射内重疊精確度之透鏡影像扭曲校正系统的〜 例。本實施形態之透鏡影像扭曲校正，其特徵係利用 層曝光時最新QC資料與m —丨層曝光時最新資 分，求出校正參數。 、差 :i為本發明第—實施形態之曝光系統的 塊圖。該系統係以透鏡影像扭曲校正的集中管理= 線表示產量流動。、、…貪料流動，虛線所示箭頭 資料伺服器110係由 罩誤差資料庫lu，可儲户下四個資料庫所構成：微影光 光罩之重疊標記配置誤子用二計測透鏡影像扭曲的微影 透鏡影像扭曲Qc資料重W，影像扭曲Qc資料庫112，將 履歷資料庫113，管理為檢查結果加以保存；Qc 量資料庫114，管理製σ ^衫像扭曲QC履歷；及製品產 灰產量的流程及屨麻。 用以一至二次透鏡影像扭曲此 内掃描方向及非掃插太A 又正《QC中，必須朝照射 以測量。 向配置最低四點重叠標記，並予 (5) 200305292 發明說明欢頁？ 以下說明本實施形態中透鏡影像扭曲QC資料的求出方 法。形成於用以求出透鏡影像扭曲QC資料的微影光罩之 標記概略係如圖2所示。如圖2所示，在照射内Z域21， 朝微影光罩的掃描方向配置八個，朝非掃描方向配置八 個，總共六十四個重疊標記2 2。200305292 ⑴ Rose, description of the invention (the description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and a brief description of the drawings) Technical Field of the Invention The present invention relates to an exposure method, especially in semiconductor manufacturing Support systems, exposure methods, and management methods. In recent years, a scanning exposure method (hereinafter, referred to as a scanning exposure device) has been developed as a scanning exposure method that allows the lithographic mask and the wafer to move in opposite directions to each other to perform exposure. And it can reduce the diameter of the projection lens. Errors caused by the exposure of the scanning exposure device include lens image distortion errors and mounting table matching errors. In terms of lenses, there are various distortions inherently called image distortions. Thus, the positional accuracy of the transferred pattern is shifted from the position that can be transferred by design. When the offset is large, the product may be defective. When a device is formed by overlapping patterns with different exposure devices, since the two different exposure devices each have inherent errors, when the correct pattern is overlapped, the combination of the two exposure devices must have relative distortion. When the same exposure device is used to overlap and form a pattern, since the relationship between the overlapped pattern and the overlapped pattern each has the same distortion, generally no offset occurs. However, if the interval between the exposure process of the overlapped pattern and the exposure process of the overlapped pattern is opened, the error will change between the two patterns when the error changes with time. When the offset between the two patterns is large, the product may be defective. 200305292 (2) Invention report; Achievement page 丨 Problems to be solved by the invention When two exposure devices are combined to overlap patterns, the two patterns will be offset. In addition, even if the same device is used, the two patterns will be shifted using the time-varying image distortion. When the offset between the two patterns is large, problems such as product failure may occur. It is an object of the present invention to provide an exposure method which can improve the accuracy of overlap when performing pattern transfer on a lamination relative to the layer to be overlapped. Means for Solving the Problems To achieve the above object, the present invention is structured as follows. (1) The exposure method of the present invention uses a scanning exposure device, which can move the lithographic mask stage on which the lithographic mask is placed and the wafer stage on which the wafer is placed in the opposite direction, and then move the aforementioned crystal The circle and the lithographic mask are moved relative to the scanning direction for scanning exposure, and the wafer stage is moved in a step direction orthogonal to the scanning direction, and then the wafer is stepped and repeated drawing method Perform exposure; the exposure method includes the following steps: with each exposure device used, there are more than four in the exposure direction, and there are more than four matrices in the step direction on the leading wafer in each irradiation area The step of detecting the position information of the plurality of configured markers: each of the mark position information obtained by the scanning exposure device used for m-a layer exposure and the mark position information obtained by the scan exposure device used for m-layer exposure A step of calculating the difference of the coordinate components; a step of obtaining each parameter representing the lens aberration of 0 to 3 times from the calculated difference; and correcting the correction parameter obtained according to the obtained parameter Difference image to perform the step of exposing the layer πι. 200305292 (3) Summary sheet of invention description: (2) The exposure method of the present invention uses a scanning exposure device, which can intersect the lithographic mask stage on which the lithographic mask is placed and the wafer stage on which the wafer is placed. Move the wafer in the opposite direction, then move the wafer and the lithographic mask relative to the scanning direction to perform scanning exposure, and move the wafer stage in a step direction orthogonal to the scanning direction, and then step and The repetitive drawing method exposes the aforementioned wafer; the above-mentioned exposure method includes the following steps: position information of three or more marks formed on the m-a layer along the scanning direction and exposure formed on the m-layer The step of obtaining the marked position information of the lithographic mask used; the step of calculating the difference (dx, dy) of the coordinate components of the two position information; from the calculated difference, each representation can be obtained with the lithographic light A step of 0 to 3 times of error parameter movement in the scanning direction of the mask and the wafer; the error is corrected according to the correction parameters obtained by the obtained parameters to perform the aforementioned step of m-layer exposure. (3) The exposure method of the present invention uses a scanning exposure device, which can move the lithographic reticle stage on which the lithographic reticle is mounted and the wafer stage on which the wafer is mounted in opposite directions, and then move the aforementioned crystal The circle and the lithographic mask are moved relative to the scanning direction for scanning exposure, and the wafer stage is moved in a step direction orthogonal to the scanning direction, and then the wafer is stepped and repeated drawing method Performing exposure; the above exposure method includes the following steps: forming position information of three or more marks on the m-a layer on the wafer along the scanning direction and forming marks on the lithographic mask used for m-layer exposure A step of obtaining position information; obtaining the coordinates of the center of gravity of each irradiation area from the mark position information formed on the m-a layer, and obtaining the center of gravity of the irradiation area from the mark position information of the lithographic mask formed on the m layer ( 4) (4) 200305292 coordinates to calculate the difference (dx, dy) of the two coordinates of the center of gravity; the calculated differences are calculated to obtain the 0 ~ 3 errors which can be followed by the wafer step direction. Steps of the parameters = Parameter obtained based on the correction parameter determined by correcting errors, to perform the steps of the green layer is exposed to m. Embodiments of the Invention Embodiments of the present invention will be described below with reference to the drawings. (First embodiment) ~ Examples of a lens image distortion correction system that improves the accuracy of overlap in irradiation. The lens image distortion correction of this embodiment is characterized by using the latest QC data at the time of layer exposure and the latest data at the time of m-th layer exposure to obtain the correction parameters. Difference: i is a block diagram of an exposure system according to the first embodiment of the present invention. The system uses a centralized management of lens image distortion correction = lines to indicate the flow of production. ..., the flow of greed material, the arrow data server 110 shown by the dotted line is composed of the mask error database lu, which can be stored in the following four databases: the overlapping marks of the lithography mask, the configuration of the error, and the use of two measuring lens images Distorted lithography lens image distortion Qc data weight W, image distortion Qc database 112, management history database 113, management to save the inspection results; Qc quantity database 114, management system σ ^ shirt distortion QC resume; and products The process of ash production and ramie. The primary and secondary lens images are used to distort the internal scanning direction and non-scanning too A and "QC", it must be illuminated to measure. To configure the lowest four-point overlapping mark, and give (5) 200305292 Description of the invention? The method of obtaining the lens image distortion QC data in this embodiment will be described below. The outline of the marks formed on the lithographic mask used to obtain the lens image distortion QC data is shown in FIG. 2. As shown in FIG. 2, in the irradiated Z-domain 21, eight are arranged in the scanning direction of the lithographic mask and eight are arranged in the non-scanning direction. A total of sixty-four overlapping marks 22 are arranged.
利用所形成的該等重疊標記22，於晶圓上的光阻進行 曝光，以在光阻形成潛像。曝光後，測量與各標記相對 應的潛像位置座標（Xi，64)。接著，於透鏡影 像扭曲及遮罩沒有製造誤差的情況，計算可形成對應各 標記的潛像位置座標（計測點）Ui，yi)(i = 1〜64)與位置 座標（Xi，Yi)(i = 1 〜64)的偏移量（△ Xi , △ = (Xi一 Xi ，yi — Υ〇(ι — 1〜64)。相對於三件晶圓，一件晶圓曝光12 照射，並分別計算其偏移量。將分別求出的各座標偏移 量平均值作為透鏡影像扭曲Q c資料。Using the formed overlapping marks 22, the photoresist on the wafer is exposed to form a latent image on the photoresist. After exposure, the latent image position coordinates (Xi, 64) corresponding to each mark are measured. Next, when the lens image is distorted and the mask has no manufacturing error, the latent image position coordinates (measurement points) Ui, yi) (i = 1 to 64) and position coordinates (Xi, Yi) ( i = 1 to 64) offset (△ Xi, △ = (Xi-Xi, yi — Υ〇 (ι — 1 ~ 64). For three wafers, one wafer is exposed to 12 irradiations, and Calculate the offset. Use the average values of the coordinate offsets obtained as the lens image distortion Q c data.
在製品產量資料庫1 04，係按所曝光的各區，管理曝 光時間、照明條件、曝光裝置、及微影光罩id號碼。系 統控制部1〇〇係由以下構件構成：運算部1〇1、在運算部1〇1 可實行固定功能之程式102、可互換第一、第二及第三掃 第一、第二重疊檢查裝 系統控制部中的資料伺 收送部103。運算部 描曝光裝置123a，123b，123c、 置124a，124b、資料伺服器丨1〇、 服器110及程式102的資料之資料 利用程式1 0 3進行：透镑吾彡德&此 边貌〜像扭曲校正參數的計算、減去 微影光罩製造誤差的計I、芬μ 9 Τ ^ 及將指令輸出至掃描曝光裝 置123(123a〜123c)、f暴故太我 )置受檢查裝置1 24( 1 24a，124b)、資 -10- 200305292 (6) 發明説明續;頁:; 料伺服器1 1 0、及系統控制部1 0 0中的資料收送部1 0 3。 另外，掃描曝光裝置123，具有為透鏡影像扭曲校正 而驅動投影透鏡部分或可壓力控制投影透鏡間之壓力控 制室或變化準分子雷射光波長之機構。掃描曝光裝置1 2 3 具有：通過可壓力控制由透鏡影像扭曲校正驅動的投影 透鏡部分投影透鏡間的壓力控制室之準分子雷射光，或 用以形成由改變波長的準分子雷射光的掃描像面，透鏡 影像扭曲未校正的掃描像面之驅動的投影透鏡部分，或 可壓力控制投影透鏡間之壓力控制室，或改變準分子雷 射光波長之機構。另外，透過上述機構，掃描曝光裝置123 中，二至三次透鏡影像扭曲誤差校正可忽略與掃描像面 校正的交互作用。 另外，不一定在系統控制部1 00進行透鏡影像扭曲校 正參數的計算及減去微影光罩製造誤差的計算。例如， 也可在掃描曝光裝置123内或重疊檢查裝置124進行。此 外，在重疊檢查裝置1 24進行的計測，也可使用掃描曝光 裝置123的重疊計測功能。 參考圖3，說明使用有圖1所示系統之曝光方法。圖3 為本發明第一實施形態之曝光方法的流程圖。將透鏡影 像扭曲重疊至m — 1層時的流程圖。 (步驟S101) 首先，以條碼讀出器122讀取附在產量箱121的條碼， 辨識製品產量的ID號碼。 (步驟S102) (7) 200305292The WIP database 104 manages the exposure time, lighting conditions, exposure equipment, and lithography mask id numbers according to the areas exposed. The system control unit 100 is composed of the following components: a computing unit 101, a program 102 that can perform a fixed function in the computing unit 101, interchangeable first, second, and third scanning first and second overlapping checks The data server receiving and sending unit 103 in the system control unit is installed. The calculation part describes the data of the exposure devices 123a, 123b, 123c, 124a, 124b, the data server 丨 10, the server 110, and the data of the program 102 using the program 103: transparent pounds & this appearance ~ Calculation of distortion correction parameters, subtraction of lithographic mask manufacturing error I, Fen μ 9 Τ ^, and output of instructions to the scanning exposure device 123 (123a ~ 123c), f. 1 24 (1 24a, 124b), information -10- 200305292 (6) Description of the invention continued; page :; data server 1 10, and the data receiving unit 103 in the system control unit 100. In addition, the scanning exposure device 123 has a mechanism for driving the projection lens portion for correction of lens image distortion, a pressure control chamber that can pressure control the projection lenses, or a mechanism that changes the wavelength of the excimer laser light. The scanning exposure device 1 2 3 includes: a pressure-controllable excimer laser light in a pressure control chamber between projection lenses that can be pressure-controlled by a projection lens portion driven by lens image distortion correction, or used to form a scanned image of excimer laser light with a changed wavelength Surface, the projection lens portion of the uncorrected scanning image plane driven by the lens image distortion, or a pressure control room that can pressure control the projection lens, or a mechanism that changes the wavelength of the excimer laser light. In addition, through the above-mentioned mechanism, in the scanning exposure device 123, the correction of the distortion of the second to third lens images can ignore the interaction with the correction of the scanning image plane. In addition, the calculation of the lens image distortion correction parameter and the calculation of subtracting the lithographic mask manufacturing error by the system control unit 100 are not necessarily performed. For example, it may be performed in the scanning exposure device 123 or the overlap inspection device 124. In addition, for the measurement performed by the overlap inspection device 124, the overlap measurement function of the scanning exposure device 123 may be used. Referring to Fig. 3, an exposure method using the system shown in Fig. 1 will be described. FIG. 3 is a flowchart of an exposure method according to the first embodiment of the present invention. Flowchart when lens images are distorted and overlapped to m — 1 layer. (Step S101) First, the bar code reader 122 reads the bar code attached to the production box 121, and identifies the ID number of the product production. (Step S102) (7) 200305292
參考製品產量資料庫丨丨4，，、，V 乂取得對應於步驟s 1 〇 1所 辨識製品產量ID號碼之製品 1所 厓貫履歷貪料。該製品甚 履歷資料中，係包含m—ι層暖上土 產量 番 層曝光時所使用的掃描曝光裝 置、照明條件'及曝光時間等三項資料。 裝 (步驟S 1 0 3 ) 含的三項資料參考履歷 取得最新QC文件iD。 資料 由製品產量履歷資料所包 庫1 0 3，回溯m — 1層曝光時， (步驟S104)Refer to the product yield database 丨 丨 4 ,,, V 乂 to obtain a product corresponding to the output ID number of the product identified at step s101. This product and resume information include three items of data: scanning exposure equipment, lighting conditions, and exposure time used in the m-th layer of warm soil production. Load (step S 103) the three reference materials in the reference history to obtain the latest QC file iD. The data is included in the product production history data library 103, and the traceback is m — 1 layer exposure, (step S104)
由QC文件ID參考影像扭曲 貝枓庫112，取得m —Distorted the reference image from the QC file ID, the Behr library 112, and obtained m —
曝光時所使用的掃描曝光奘 E 曝尤裝置的透鏡影像扭曲Qc資 該透鏡影像扭曲QC資料，保户1… 竹保存於影像扭曲QC資料庫u 時，從微影光罩誤差資料庫n〗c 貝矸厚111叫出微影光罩誤差文 校正製造誤差。Scanning exposure used during exposure 奘 E The lens image distortion Qc of the exposure device is used to protect the lens image distortion QC data. When the user saves 1 ... bamboo in the image distortion QC database u, from the lithography mask error database n. c. Bei Hou 111 called out the lithographic mask error and corrected the manufacturing error.
以條碼讀出器122辨識製品ID號瑪後，與檢索m—1JS 曝光時的QC影像扭曲資料之作業（Si〇2〜si〇4)並行，^ 進行用以m層曝光的最新（^資料檢索（si〇5〜si〇7)。 (步驟S105) 、由製品組ID號碼參考製品產量資料庫114，叫出流程 資料。該流程資料係包含m層曝光時的掃描曝光裝置、 照明條件等二項資料。 (步驟S106) 由流程資料所包含的二項資料參考QC履歷資料庫113 ，回溯m層曝光時，取得最新Qc文件ID。 (步驟S 107) -12- 200305292 (8) 發明說明續珀 ,由所辨識的QC文件ID參考影像扭曲QC資料庫112，取 曰曝光時的透鏡影像扭曲QC資料。該透鏡影像扭曲 Q c資姐 、 ^ 、 ’於保存時從微影光罩誤差資料庫叫出微影光罩 為差文件，校正製造誤差。 (步驟S108) 計算由上述作業取得的爪層曝光時及拟一1層曝光時之 Qc影像扭曲資料的差分（dx，dy)。 (步驟S109) 將所計算的差分及計測點座標代入以下所示（1)式或（2) 式所示校正式。 【數學式5】 dx== kx+ k3x+ k5y+ k7x2+ k13x3 dy = k2+ k4y + k6x+ k12x2 (1)， k{ + k3x+ k5y + k13x3 dy= k2+ k4y+ k6x+ k10xy (2)， 其中， dx :照射内成份偏移量X dy :照射内成份偏移量y χ :照射内座標X y:照射内座標γ 接著，藉由最小二乘法的匹配，求出矸表示誤差的參 數 k〖，k2, k3, k4, k5, k6 k7 kl2 k10, ki3，以求出影像扭曲 校正參數。 式（1)之校正式，係由包含可校正χ方向相移成伤的k 1 -13 - 200305292 (9) 發明說明續補 及可校正y方向相移成份的k2零次校正項、可校正X方向 倍率成份的k3、可校正y方向倍率成份的k4、可校正轉動 成份及正交度成份的k5，k6，之一次校正項成份所構成 。該等1^至k6的校正，係以往型之校正式。After identifying the product ID number with the barcode reader 122, it is parallel to the operation (Si〇2 ~ Si〇4) of retrieving the QC image distortion data during the exposure of m-1JS, and the latest (^ data for m layer exposure) Search (si〇5 ~ si〇7). (Step S105) The product data database 114 is referred to by the product group ID number, and the process data is called. This process data includes the scanning exposure device for m-layer exposure, lighting conditions, etc. Binary data (Step S106) Refer to the QC resume database 113 from the binarized data included in the process data, and obtain the latest Qc file ID when backtracking the m-layer exposure. (Step S 107) -12- 200305292 (8) Description of the invention Continued, from the identified QC file ID reference image distortion QC database 112, take the lens image distortion QC data at the time of exposure. The lens image distortion Q c sister, ^, 'error from the lithographic mask during storage The database calls out the lithographic mask as a difference file to correct the manufacturing error. (Step S108) Calculate the difference (dx, dy) of the distortion data of the Qc image when the claw layer exposure and the pseudo-one-layer exposure are obtained by the above operation. (Step S109) Place the calculated difference and measurement point Substitute the correction formula shown in formula (1) or (2) below. [Mathematical formula 5] dx == kx + k3x + k5y + k7x2 + k13x3 dy = k2 + k4y + k6x + k12x2 (1), k {+ k3x + k5y + k13x3 dy = k2 + k4y + k6x + k10xy (2), where dx: component offset within irradiation X dy: component offset within irradiation y χ: internal coordinate X y: internal coordinate γ Next, by the least square method Match and find the parameter k [, k2, k3, k4, k5, k6, k7, kl2, k10, ki3] that represents the error, to obtain the image distortion correction parameters. The correction formula of equation (1) consists of the correctable χ direction K 1 -13-200305292 with phase shift damage (9) Description of the invention: Continued supplementation and k2 zero-order correction term that can correct the y-phase phase shift component, k3 that can correct the X-direction magnification component, and k4 that can correct the y-direction magnification component. K5, k6, which can correct the rotation component and the orthogonality component, are composed of one-time correction term components. The corrections from 1 ^ to k6 are the previous correction formulas.
本實施形態中，除了係數1^至1<：6，尚由藉由偏X方向將 可校正< 4 f A像差或七' A二夂像差的像差校正機構予 以校正之校正項k7;藉由偏y方向校正像差校正機構之校 正項k12;及上下驅動校正像差校正機構之校正項k13的2 〜3次項所構成。 掃描曝光裝置校正機構的校正形式，係使用（2)式所示 校正式。校正項1^至1<:6雖與（1)式相同，但校正項ki。藉由 晶圓台驅動，校正項k13藉由改變準分子雷射光的波長而 校正。In this embodiment, in addition to the coefficients 1 ^ to 1 <: 6, correction terms are corrected by an aberration correction mechanism that can correct < 4 f A aberration or seven 'A two aberrations by deviating from the X direction. k7; It is constituted by the correction term k12 of the aberration correction mechanism that corrects the y-direction; and the correction term k13 of the aberration correction mechanism of the aberration correction mechanism k13. The correction form of the scanning exposure device correction mechanism uses the correction formula shown in the formula (2). The correction terms 1 ^ to 1 <: 6 are the same as the expression (1), but the correction terms ki. With the wafer stage drive, the correction term k13 is corrected by changing the wavelength of the excimer laser light.
上述之例中，微影光罩製造誤差雖於保存時校正透鏡 影像扭曲QC資料，但也可減去與影像扭曲差計算時間等 不同之時間。 (步驟S 1 10) 將所求出之校正參數輸入m層曝光所使用的掃描曝光 裝置。 其次，顯示2〜3次透鏡影像扭曲誤差校正效果的檢證 實驗結果。圖4為KrF掃描曝光裝置中照射區内影像扭曲 照明間差的向量圖。此係在（3)式所示以往之掃描曝光裝 置運用方法的影像扭曲校正式顯示最小二乘匹配之殘留 誤差成份。 -14- 200305292 (ίο) 發明說明績頁: 【數學式6】 dx = ki + IC3X + k$y dy = k2 + k4y + k6x (3) dx :照射内成份偏移量X dy :照射内成份偏移量Y χ :照射内座標X y :照射内座標ΥIn the above example, although the lithographic mask manufacturing error corrects the lens image distortion QC data during storage, it can also subtract time different from the calculation time of the image distortion difference. (Step S 1 10) The obtained correction parameters are input to a scanning exposure device used for m-layer exposure. Secondly, the verification experiment results of the correction effect of lens image distortion error are displayed 2 to 3 times. Fig. 4 is a vector diagram of the difference between the distorted and illuminated images in the irradiation area in the KrF scanning exposure device. This is the image distortion correction formula used in the conventional scanning exposure device method shown in Equation (3) to show the residual error component of least squares matching. -14- 200305292 (ίο) Summary page of the invention: [Mathematical formula 6] dx = ki + IC3X + k $ y dy = k2 + k4y + k6x (3) dx: internal component offset X dy: internal component during irradiation Offset Y χ: Internal coordinate X y: Internal coordinate 内
此外，於（1)式所示校正式利用最小二乘法進行參數匹 配所得的殘留誤差成份係如圖5所示。圖5為進行本發明 第一實施形態之曝光方法時的照射區内影像扭曲照明間 差的向量圖。此係於（1)式所示本發明運用方法的透鏡影 像扭曲校正式的最小二乘匹配殘留誤差成份。表1係整理 以往之運用方法與本發明運用方法之照射内殘留透鏡影 像扭曲誤差的減少。 【表1】 殘留成份3 σ X 殘留成份3 σ Υ 以往校正方式 46 13 本校正方式 15 13In addition, the residual error component obtained by the parameter matching using the least squares method in the correction formula shown in equation (1) is shown in FIG. 5. Fig. 5 is a vector diagram showing the difference in image distortion illumination in the irradiation area when the exposure method according to the first embodiment of the present invention is performed. This is based on the least squares matching residual error component of the lens image distortion correction formula of the application method of the present invention shown in formula (1). Table 1 summarizes the reduction of the distortion error of the residual lens image during irradiation in the conventional application method and the application method of the present invention. [Table 1] Residual component 3 σ X Residual component 3 σ Υ Previous correction method 46 13 This correction method 15 13
如表1所示，由於本校正方法3 σ值縮小，故與以往之 校正方法相比，本實施形態所說明之校正方法較有用。 根據本實施形態，重疊誤差尤指藉由混和與匹配使用 時的透鏡影像扭曲誤差減少，故可提升重疊精確度。換 言之，可減少重疊不良之重作，提升裝置使用率，並提 -15- 200305292 (Π) 發嗍說明績頁】 升生產性。 此外，可進行對透鏡像差經時變化的校正。藉由他號 機與像差重疊，在號機間可共用微影光罩。如此，可減 少微影光罩製作費、尺寸不良等的重作，從而提升裝置 使用率，並提升生產性。再者，可達成線上之誤輸入錯 誤的減少及處理時間的縮短。As shown in Table 1, since the σ value of this correction method is reduced, the correction method described in this embodiment is more useful than the conventional correction method. According to this embodiment, the overlap error, especially the distortion error of the lens image during mixing and matching, is reduced, so that the accuracy of the overlap can be improved. In other words, it can reduce the rework of bad overlap, improve the utilization rate of the device, and improve the productivity. In addition, correction of changes in lens aberrations over time can be performed. By overlapping the aberrations of other cameras, a lithographic mask can be shared between the cameras. In this way, it is possible to reduce rework of the lithography mask production cost, defective size, etc., thereby improving the utilization rate of the device and improving the productivity. Furthermore, it is possible to reduce the number of erroneous input errors on the line and the processing time.
以上實施形態中，雖說明將m層重疊至m— 1層之例， 但所重疊層未必限於m— 1層。此時，重疊至曝光於a層 前的層時，上述實施例中m— 1層的部分也可為m — a層。 此外，有要求高精密度重疊至之後可燒上m層的m+a層 之情況。此時，以m層曝光時曝光m+a層的掃描曝光裝 置、照明條件的最新影像扭曲資料與曝光m層的掃描曝 光裝置、照明條件的最新影像扭曲資料之差分，算出透 鏡影像扭曲校正參數。此外，也可將掃描方向相同的各 照射及步進方向相同的各照射代入（1)式或（2)式的校正 式，所求出校正值分配至各掃描方向或各步進方向而校 正。 (第二實施形態） 本實施形態中，係以提升照射内重疊精確度為目的之 微影光罩台移動鏡彎曲校正系統的一例。微影光罩台移 動鏡弩曲校正系統，係步進及重複式描畫法曝光方式中 未發生的掃描曝光裝置特有者。 圖6為本發明第二實施形態之曝光系統的概略構成區 塊圖。本系統係以微影光罩台移動鏡彎曲校正的集中管 -16- 200305292 (12) 發明說明續頁, 理為目的。另外，圖6中，與圖1相同部位係標上同一符 號，並省略說明。 如圖6所示，系統控制部2 0 0，係由以下構件構成：運 算部201、於運算部201進行固定功能之程式2〇2、及進行 系~、第二及第三掃描曝光裝置123a，123b，123c、第 、第二重疊檢查裝置124a，124b、資料伺服器n〇、系 夫制部中的運异部2 〇 1及程式2 〇 2的資料互換之資料收In the above embodiment, an example in which the m layer is overlapped to the m-1 layer has been described, but the overlapped layer is not necessarily limited to the m-1 layer. At this time, when overlapping to a layer exposed before the a layer, the part of the m-1 layer in the above embodiment may be the m-a layer. In addition, there is a case where a high precision is required so that the m + a layer can be fired to the m layer later. At this time, the difference between the latest image distortion data of the scanning exposure device that exposes the m + a layer and the lighting conditions during the m-layer exposure and the latest image distortion data of the exposure exposure device that is the m layer and the latest lighting conditions are used to calculate the lens image distortion correction parameters. . In addition, each irradiation in the same scanning direction and each irradiation in the same step direction can be substituted into the correction formula of the formula (1) or (2), and the obtained correction value can be assigned to each scan direction or each step direction for correction. . (Second Embodiment) This embodiment is an example of a lithography mask stage moving mirror bending correction system for the purpose of improving the accuracy of overlap within irradiation. The lithographic mask stage moving mirror crossbow correction system is unique to the scanning exposure device that has not occurred in the stepping and repeating drawing exposure methods. Fig. 6 is a block diagram showing a schematic configuration of an exposure system according to a second embodiment of the present invention. This system is a concentrated tube for lithography reticle stage moving mirror bending correction -16- 200305292 (12) Description of the invention continued on the next page, for the purpose. In addition, in FIG. 6, the same parts as those in FIG. 1 are denoted by the same symbols, and descriptions thereof are omitted. As shown in FIG. 6, the system control unit 200 is composed of the following components: a computing unit 201, a program 202 for performing fixed functions in the computing unit 201, and a processing system ~, second and third scanning exposure devices 123a , 123b, 123c, the first and second overlapping inspection devices 124a, 124b, the data server no, the department of the husbandry department, the different parts of the 2 001 and the program 2 002 data exchange data collection
埯部203。運算部201利用程式2〇2進行透鏡影像扭曲校正 數的汁算減去微影光罩製造誤差的計算、及將指令 崎出至掃描曝光裝置 夏I23(i23a〜123c)、重疊檢查裝置 Q4(l24a、124b)、資料 洛 竹词服器1 1 0、系統控制部200中的 貧料收送部203。 不一定以系統控制部 % % %進行校正參數的計算及減去微影 罩製造誤差的計算。， 例如，也可在掃描曝光裝置内或 叠檢查裝置進行。& &外，在重疊檢查裝置進行的計測 可使用掃描曝光裝w ^埯 部 203. The calculation unit 201 calculates the lens image distortion correction number using the formula 202 to calculate the lithographic mask manufacturing error, and outputs the instruction to the scanning exposure device Xia I23 (i23a to 123c) and the overlap inspection device Q4 ( l24a, 124b), the data Luozhu word server 110, the lean material receiving and sending unit 203 in the system control unit 200. It is not necessary to calculate the correction parameters and subtract the manufacturing error of the reticle from the system control section%%%. For example, it can also be performed in a scanning exposure device or a stack inspection device. & & In addition, the measurement performed on the overlap inspection device can be performed using a scanning exposure device.
夏的重疊計測功能。 如圖7所示，為了進^ 嚷行微影光軍台移動鏡彎曲校正’ 製品產量的微影井奩 、 、 、 罩照射區3 1内，三點重複標記3 4係 著微影光罩的掃插方向而配置。ί複標記3 4係配置於 置區32外側的切割區33。使用各層的製品用微影光罩 Μ導式日9圓進曝光，以重疊檢查裝置1 2 3測量轉印至 随之各層重複標記的座標。 圖8為本發明第二實施形態之曝光方法的流程圖。本 施形態中’進行巩層曝光時，將微影光罩台移動鏡彎 17- 200305292 (13) 發明訴f續无 曲重疊至m — 1層。 (步驟S 2 0 1) 首先，以條碼讀出器1 2 0讀取附在產量箱的條碼，辨 識製品產量的ID號碼。 (步驟S 2 0 2 ) 參考包含在製品產量資料庫之已辨識的製品產量ID號 碼，叫出m層曝光所使用製品微影光罩的微影光罩ID號 碼。參考微影光罩誤差資料庫，叫出m層曝光用製品微 影光罩的重複標記配置誤差。 (步驟S203 ) 製品產量中，取得形成於m— 1層曝光時之重複標記的 重疊精確度測量結果之步驟。 (步驟S204) 計算重疊精確度測量結果與m層曝光用製品微影光罩 的重複標記配置誤差的差分。 (步驟S205) 將所計算的差分及計測點座標代入（4)式所示校正式。 【數學式7】 dx = k! + k3x + k5y + kny2 + k19y3(4) 其中，Xia's overlap measurement function. As shown in FIG. 7, in order to perform the correction of the lithography light mobile stage ’s mirror bending, the three-point repeat mark 3 4 in the lithography well 奁, 、, and hood irradiated area of the product output is attached to the lithography photomask. Scanning direction. The multiple marks 3 4 are arranged in the cutting area 33 outside the setting area 32. A lithographic mask using a lithographic mask of 9 layers was used for exposure of each layer of the product, and the overlapping inspection device 1 2 3 was used to measure the coordinates transferred to the subsequent repeated marks of each layer. FIG. 8 is a flowchart of an exposure method according to a second embodiment of the present invention. In the present embodiment mode, when performing scleral exposure, the lithographic mask stage is moved to bend the mirror 17- 200305292 (13) Invention f is continued without overlapping to the m-1 layer. (Step S 2 0 1) First, the bar code reader 1 2 0 reads the bar code attached to the production box, and recognizes the ID number of the product production. (Step S 2 0 2) Refer to the identified product yield ID number contained in the product yield database, and call out the lithographic mask ID number of the lithographic mask of the product used for m-layer exposure. With reference to the lithographic mask error database, the repeated marking configuration error of the lithographic mask of the m-layer exposure product is called. (Step S203) In the production yield, a step of obtaining a measurement result of the overlap accuracy of the repeated marks formed at the m-1 layer exposure. (Step S204) The difference between the overlap accuracy measurement result and the repeat mark placement error of the lithographic mask of the m-layer exposure product is calculated. (Step S205) The calculated difference and the coordinate of the measurement point are substituted into the correction formula shown in the formula (4). [Mathematical formula 7] dx = k! + K3x + k5y + kny2 + k19y3 (4) where,
dx :照射内成份偏移量X x :照射内座標X y :照射内座標Y 接著，藉由使用有最小二乘法的匹配，求出校正項k i，k3， -18- 200305292 (14) 發明說明續頁 k5, ku，k19的微影光罩台移動鏡彎曲校正參數。dx: internal component offset X x: internal coordinate X y: internal coordinate Y Next, the correction term ki, k3, -18- 200305292 (14) is obtained by using the matching with least square method. (14) Description of the invention Continued on k5, ku, k19 for the correction parameters of the lithographic reticle stage mirror bending correction.
式（4)所示校正式，係由包含可校正X方向相移成份的ki 及可校正y方向相移成份的k2的零次校正項與可校正X方 向倍率成份的k3、可校正y方向倍率成份的k4、可校正轉 動成份及正交度成份的k5，k6，之一次校正項成份所構 成。前述校正項1^至1^6的校正，係以往型之校正式。本 實施形態中，除了校正項k i至k 6，係由將掃描方向近似 二次曲線的微影光罩台移動鏡彎曲誤差予以校正之ki i、 將掃描方向近似三次曲線的微影光罩台移動鏡彎曲誤差 予以校正之k19的2〜3次校正項所構成。 (步驟S205) 將所求出之校正參數輸入掃描曝光裝置並進行曝光。The correction formula shown in equation (4) is composed of a zero-order correction term including ki which can correct the phase shift component in the X direction and k2 which can correct the phase shift component in the y direction, k3 which can correct the magnification component in the X direction, and a correctable y direction It consists of k4 of the magnification component, k5 and k6 of the rotation component and orthogonality component, which can be corrected once. The correction of the aforementioned correction items 1 ^ to 1 ^ 6 is a conventional correction formula. In this embodiment, in addition to the correction terms ki to k 6, ki i is corrected by the lithographic mask moving error of the lithographic mask stage which approximates the quadratic curve in the scanning direction, and the lithographic mask stage which approximates the cubic curve in the scanning direction. The k19 2 to 3 times correction term is used to correct the bending error of the moving mirror. (Step S205) The obtained correction parameters are input to the scanning exposure device and exposure is performed.
其次，顯示微影光罩台移動鏡彎曲重疊至m — 1層之校 正效果的檢證實驗結果。圖9為由以往之曝光方法所曝光 之掃描曝光裝置間照射内殘留誤差的向量圖。此係在（4) 式的以往之曝光方法的校正式顯示最小二乘匹配之殘留 誤差成份。圖10為藉由本發明第二實施形態之校正方法 所曝光之掃描曝光裝置間照射内殘留誤差的向量圖。此 係（4)式所示在本發明運用方法的微影光罩台移動鏡彎曲 校正式的最小二乘匹配之殘留誤差成份。 表2係整理以往之運用方法與本發明運用方法之掃描 曝光裝置間微影光罩台移動鏡彎曲校正運用方法之照射 内殘留透鏡影像扭曲誤差的減少。 -19- 200305292 (15) 發明說:明續頁: 4:¾ :::¾丨〆'诎夂.帝 【表2】 殘留成份3σΧ 無以往運用方法向量移動鏡曲率校正 32 有本發明運用方法向量移動鏡曲率校正 22Secondly, the results of verification experiments showing the correction effect of the lithographic reticle moving mirror bending and overlapping to m-1 layer. Fig. 9 is a vector diagram of residual errors in irradiation between scanning exposure apparatuses exposed by a conventional exposure method. The correction formula of the conventional exposure method in the formula (4) shows the residual error component of the least squares match. Fig. 10 is a vector diagram of residual errors in irradiation between scanning exposure apparatuses exposed by the correction method of the second embodiment of the present invention. This equation (4) shows the residual error component of the least-squares matching of the lithographic mask stage moving mirror bending correction method in the application method of the present invention. Table 2 summarizes the scanning of the past application method and the application method of the present invention. The reduction of the distortion error of the residual lens image in the irradiation of the lithographic photomask stage moving mirror bending correction application method between the exposure devices is reduced. -19- 200305292 (15) Invention description: Ming Continued: 4: ¾ ::: ¾ 丨 〆 '诎 夂. Emperor [Table 2] Residual component 3σ × No previous operation method Vector movement mirror curvature correction 32 There is an application method of the present invention Vector moving mirror curvature correction 22
由於本發明運用方法的3 σ值縮小，故相較於以往之 未校正微影光罩台移動鏡彎曲的運用方法，可使本發明 之微影光罩台移動鏡彎曲校正的運用方法有用。Since the 3σ value of the application method of the present invention is reduced, compared with the conventional method of using the uncorrected lithographic mask stage mobile mirror bending, the application method of the lithographic mask stage mobile mirror bending correction of the present invention can be useful.
本實施形態中，雖說明將m層重疊至m — 1層之例，但 所重疊層未必限於m— 1層。此時’重疊至曝光於a層前 的層時，上述實施形態中m— 1層的部分也可為m— a層， 計測m — a層曝光時的重疊計測標記與m層曝光時的重疊 計測標記之偏移量，代入（4)式的校正式，以求出校正參 數。此外，也可將掃描方向相同的各照射及步進方向相 同的各照射代入（4)式的校正式，將所求出校正值分配至 各掃描方向或各步進方向而進行校正。 根據本實施形態，重疊誤差尤指藉由混和與匹配使用 時的掃描方向移動的誤差減少，可提升重疊精確度。換 言之，可減少重疊不良之重作，提升裝置使用率，並提 升生產性。 (第三實施形態） 本實施形態中，係以提升晶圓重疊精確度為目的之晶 圓台誤差校正系統的一例。此處之晶圓台誤差，係晶圓 台移動鏡彎曲誤差、取平誤差的掃描正反差、各行各列 -20- 200305292 (16) 發明說明磧育:丨 偏移之步進方向誤差。 利用製品產量的重疊檢查結果，於m層曝光時積極重 疊m— 1層曝光時因掃描曝光裝置固有的載置台誤差。此 外，減少製品產量重疊測量點數而使信賴性減少時，參 考曝光時的最新Q C資料，將因曝光m層的掃描曝光裝置 晶圓台的誤差成份包含在因曝光m — 1層的掃描曝光裝置 晶圓台的誤差成份。In this embodiment, an example in which m layers are overlapped to m-1 layers has been described, but the overlapped layers are not necessarily limited to m-1 layers. At this time, when “overlap to the layer before exposure to layer a”, the part of the layer m-1 in the above embodiment may also be layer m-a, and measure the overlap when m-a layer is exposed and measure the overlap when the layer m is exposed Measure the offset of the mark and substitute it into the correction formula of (4) to obtain the correction parameter. In addition, each irradiation in the same scanning direction and each irradiation in the same step direction can be substituted into the correction formula of the formula (4), and the obtained correction value can be assigned to each scanning direction or each step direction for correction. According to this embodiment, the overlap error, particularly the scanning direction movement error during mixing and matching use is reduced, and the accuracy of the overlap can be improved. In other words, it can reduce rework of poor overlap, improve the utilization rate of the device, and improve productivity. (Third Embodiment) This embodiment is an example of a wafer round table error correction system for the purpose of improving wafer overlap accuracy. The wafer stage error here is the bending error of the moving mirror of the wafer stage, the scanning contrast of the flattening error, and each row and column. -20- 200305292 (16) Description of the invention: 丨 The deviation of the step direction of the offset. Based on the results of overlapping inspection of product yield, the m-1 layer is actively overlapped during the m-1 layer exposure due to the mounting stage error inherent in the scanning exposure device. In addition, when the reliability of the product is reduced by reducing the number of overlapping measurement points, the latest QC data at the time of the exposure is referred to, and the error component of the wafer stage of the scanning exposure device for the m-layer exposure is included in the scan exposure of the m-1 layer for the exposure The error component of the device wafer stage.
由於以晶圓台誤差校正的集中管理為目的之生產支援 系統與第二實施形態所述生產支援系統相同，故省略說 明。誤差校正的計算係使用第二實施形態中所求出h及k2 、或與各照射區重疊偏移的檢查結果之平均值。 圖1 1為本發明第三實施形態之曝光方法的流程圖。本 實施形態中，於m層曝光時將晶圓台誤差重疊至m— 1 層。 (步驟S301)Since the production support system for the purpose of centralized management of wafer stage error correction is the same as the production support system described in the second embodiment, the description is omitted. The calculation of the error correction is based on the average value of the inspection results of h and k2 obtained in the second embodiment or overlapping and offsetting with each irradiation area. FIG. 11 is a flowchart of an exposure method according to a third embodiment of the present invention. In this embodiment, the wafer stage error is overlapped to the m-1 layer during the m-layer exposure. (Step S301)
預備第一實施形態中所求出的校正項h、k2。 (步驟S 3 0 2) 在此，隨著m — 1層曝光時的各照射，求出包含在各照 射區的各重複標記的重心座標。 (步驟S3 03 ) 求出形成於m層曝光所使用的微影光罩之重複標記的 重心座標。 (步驟S304) 隨著各照射，將於步驟S3 02、S3 03中所求出二個重心 -21 - 200305292 發明說物: (17) 座標的差分（DX，DY)予以運算。 (步驟S 3 0 5 ) 將形成於校正項k ib未偏移時的照射區之重複標記 重心座標（X，Y)、差分（DX，DY)代入式（5)的校正式。 【數學式8】 DX = ki + k3X + k5 Y + ki 丄 Y2 土S 土 x ±Sxstepx 土Systepx D Y = k 2 + k 4 Y + k 6 X + k J 2 X 2 土 S 土 y S x s t e p y 土 S y s t e p y ( 5 )The correction terms h and k2 obtained in the first embodiment are prepared. (Step S 3 0 2) Here, the coordinates of the center of gravity of each repetitive mark included in each irradiation area are obtained with each irradiation in the m-1 layer exposure. (Step S3 03) The center of gravity of the repeated mark formed on the lithographic mask used for m-layer exposure is obtained. (Step S304) With each irradiation, two gravity centers -21-200305292 obtained in steps S3 02 and S3 03 will be calculated. (17) The difference (DX, DY) of the coordinates will be calculated. (Step S 3 0 5) Substituting the repeated marks formed in the irradiation area when the correction term k ib is not shifted, the center of gravity coordinates (X, Y) and differences (DX, DY) are substituted into the correction formula of the formula (5). [Mathematical formula 8] DX = ki + k3X + k5 Y + ki 丄 Y2 soil S soil x ± Sxstepx soil Systepx DY = k 2 + k 4 Y + k 6 X + k J 2 X 2 soil S soil y S xstepy soil S ystepy (5)
X :晶圓内座標X，y :晶圓内座標Y S 土 x :掃描正反差校正值X( +掃描時符號+，一掃描時符號〜） S士y:掃描正反差校正值Y(+掃描時符號+，一掃描時符說〜） ^xstepx * X方向步進時校正值x(+步進描時符號+，左步進時符號〜）X: In-wafer coordinates X, y: In-wafer coordinates YS Soil x: Scanning positive contrast correction value X (+ sign during scanning +, one sign during scanning ~) S y: Scanning positive contrast correction value Y (+ scan The time sign +, a scan time sign says ~) ^ xstepx * correction value x when stepping in the X direction (+ sign when stepping +, sign when stepping left) ~)
Systepx · Y方向步進時校正值χ(+上步進描時符號+，下步進時符號〜）Systepx · Correction value χ in Y-direction step (+ sign + for step up, + sign for down step ~)
Sxstepy · X方向步進時校正值Y(+右步進時符號+，左步進時符號〜）Sxstepy · Correction value Y when stepping in X direction (+ sign for right step +, sign for left step ~)
SystePy : Υ方向步進時校正值Υ(+上步進描時符號+，下步進時符號一） 本實施形態中，除了以往之校正項1^至1(：6，亦可由將 X方向近似二次曲線的晶圓台移動鏡彎曲誤差予以校正 之Ki i、將Υ方向近似二次曲線的晶圓台移動鏡弩曲誤差 予以校正之Ku的2次項、掃描正反差校正項s：tx(X方向 的正反差校正項）、S 土 y(X方向的正反差校正項）、步進方 向差校正項Sxstepx(X方向步進時的X方向校正項）、SystePy: 校正 correction value when stepping in the directionΥ (+ sign when stepping up +, sign 1 when stepping down) In this embodiment, in addition to the conventional correction items 1 ^ to 1 (: 6, the X direction can also be changed by Ki i, which corrects the bending error of the wafer stage moving mirror with an approximate quadratic curve, Ku's quadratic term, which corrects the correction error of the scanning table's forward contrast, s: tx (X-direction positive-contrast correction term), S y (X-direction positive-contrast correction term), step-direction difference correction term Sxstepx (X-direction correction term during X-direction stepping),
Sy“epx(Y方向步進時的X方向校正項）、項方向步 進時的Y方向校正項）、Systepy(Y方向步進時的γ方向校正 貢）所構成。作為校正時的基準之掃描方向及步進方向則 不管。 -22- 200305292 (18) 發明說明續頁::; (步驟S3 06) 利用使用有最小二乘法之匹配求出各校正項，以求出 校正參數。 (步驟S3 07) 將所求出之校正參數輸入可進行m層曝光之掃描曝光 裝置並進行曝光。Sy is composed of "epx (X-direction correction term in Y-direction step), Y-direction correction term in term-direction step), and Systepy (γ-direction correction term in Y-direction step). It is used as a reference when correcting. The scanning direction and stepping direction are ignored. -22- 200305292 (18) Description of the Invention Continued ::; (Step S3 06) Use the least square method to find the correction terms to find the correction parameters. (Step S3 07) Enter the obtained correction parameters into a scanning exposure device capable of m-layer exposure and perform exposure.
其次，顯示晶圓台誤差校正中將晶圓移動鏡攣曲重疊 至m— 1層之校正效果的檢證實驗結果。圖12為藉由以往 之曝光方法所曝光之掃描曝光裝置間晶圓成份的向量圖 。晶圓成份，係在（6)式的以往之掃描曝光裝置運用方法 的晶圓成份校正式顯示最小二乘匹配之殘留誤差成份者。 【數學式9】Secondly, it shows the verification experiment results of the correction effect of the wafer stage mirror correction for overlapping the wafer moving mirror to the m-1 layer. FIG. 12 is a vector diagram of wafer components between scanning exposure apparatuses exposed by a conventional exposure method. The wafer component is the one based on the conventional scanning exposure device method (6). The wafer component correction type displays the residual error component of the least squares match. [Mathematical formula 9]
DX= k! + k3X+ k5Y DY= k2 + k4Y+ k6X (6)DX = k! + K3X + k5Y DY = k2 + k4Y + k6X (6)
DX :照射内成份偏移量X DY :照射内成份偏移量Y X :照射内座標X Υ :照射内座標Υ 圖13為藉由本發明第三實施形態之曝光方法所曝光之 掃描曝光裝置間晶圓成份的向量圖。此係（5)式所示於本 發明運用方法的校正式的最小二乘匹配之殘留誤差成份 。表3係整理以往之運用方法與本發明運用方法之掃描曝 光裝置間晶圓台移動鏡弩曲校正運用方法的殘留晶圓内 誤差減少者。 -23- 200305292 lliwii 【表3 ] --"—^--- (nm) —---- 殘留成份3σΧ 殘留成份3σΥ 晶圓移動鏡曲校正 34 26 _動鏡曲校正 16 26 双^所示’由於本發明運用方法的3 σ值縮小，故相 較於以往之未校正晶圓台移動鏡彎曲之運用方法，使本 發明疋晶圓台移動鏡彎曲校正的運用方法有用。 晶圓台誤差，有減少製品產量重疊測量點數而使信賴 性減少的情況。此時，回溯m 一丨層曝光時而輸入最新QC 資料，並將曝光m — 1層的晶圓台的誤差成份與回溯瓜層 曝光時的將最新QC資料的晶圓台的誤差成份的差分輸入 掃描曝光裝置並予以校正。 取平誤差的掃描正反差、各行各列偏移的步進方向差 等求出方法亦可使用下述的求出方法。取得曝光历一 ι層 的掃描曝光裝置中於曝光時點的最新料與曝光瓜層 的掃描曝光裝置中最新QC資料的差分，以算出各照射中 的平均值。此外，求出各正掃描的平均值與各負掃描的 平均值，將差分輸入曝光裝置並進行校正。又，求出各 行各列偏移的平均值，將差分輪入曝光裝置並進行校正。 或是，也可在輸入第一及第二實施形態中所述校正式 前求出各正掃描的平均值，各負掃描與各行的平均值\ 各列平均值’然後將差分輸入曝光裝置並進行校正。 重疊誤差尤指藉由混和與匹配使用時的步進方向的嗲 -24- 200305292 (20) 發明說明；績頁i 心屮卟.‘彳八丨‘π 丨雜，輸!.ί!νί 差減少，可提升重疊精確度。換言之，可減少重疊不良 之重作，提升裝置使用率，並提升生產性。 (第四實施形態） 也可進行用以達成第一至第三實施形態的目的之校正 。此時，照射内的校正式係式（7)或式（8)。 【數學式10】 dx = k{ + k3x + k5y + k7x2 + kny2 + kl3x3 + k19y3 dy= k2+ k4y+ k6x+ k12x2 (7) dx=k1+k3x+k5y+k11y2+k13x3+k19y3 (8) dy= k2+ k4y+ k6x+ k10xyDX: internal component offset X DY: internal component offset YX: internal coordinate X Υ: internal coordinate Υ Fig. 13 is a scanning exposure device exposed by the exposure method of the third embodiment of the present invention Vector illustration of circle composition. This series (5) shows the residual error component of the least squares matching of the correction formula of the application method of the present invention. Table 3 is a summary of those who have reduced the errors in the remaining wafers by using the conventional application method and the scanning exposure device of the present invention using the wafer table moving mirror crossbow correction method. -23- 200305292 lliwii [Table 3]-" — ^ --- (nm) —---- Residual component 3σ × Residual component 3σΥ Wafer movement mirror correction 34 26 _moving mirror correction 16 26 double It is shown that the 3σ value of the application method of the present invention is reduced, which makes the application method of the wafer table mobile mirror bending correction of the present invention more useful than the conventional methods of uncorrected wafer table mobile mirror bending. Wafer table errors may reduce the number of overlapping product measurement points and reduce reliability. At this time, the latest QC data is input during the retrospective exposure of layer m, and the difference between the error component of the wafer stage exposed at m-1 and the wafer stage of the latest QC data during retrospective exposure Enter the scanning exposure device and correct it. The scanning error of the leveling error, the difference in the step direction of each row and column offset, and other methods can also be used. The difference between the latest material at the exposure time point in the scanning exposure device with one-layer exposure history and the latest QC data in the scanning exposure device at the exposure layer is obtained to calculate the average value in each irradiation. In addition, the average value of each positive scan and the average value of each negative scan are obtained, and the difference is input to the exposure device and corrected. The average of the offsets in each row and column is calculated, and the difference is rolled into the exposure device and corrected. Alternatively, the average value of each positive scan may be obtained before the correction formulas described in the first and second embodiments are input, the average value of each negative scan and the average value of each row \ the average value of each column, and then the difference is input into the exposure device and Make corrections. Overlap error is especially 嗲 -24- 200305292 (20) Description of the stepping direction when mixing and matching is used; performance page i heart 屮. '彳 八 丨' π 丨 miscellaneous, lose! .Ί! Νί Difference Decreasing can improve overlap accuracy. In other words, it can reduce the rework of poor overlap, improve the device utilization rate, and improve productivity. (Fourth Embodiment) Corrections for achieving the objects of the first to third embodiments may be performed. At this time, the correction formula in the irradiation is the formula (7) or the formula (8). [Equation 10] dx = k {+ k3x + k5y + k7x2 + kny2 + kl3x3 + k19y3 dy = k2 + k4y + k6x + k12x2 (7) dx = k1 + k3x + k5y + k11y2 + k13x3 + k19y3 (8) y + k4 k6x + k10xy
dx :照射内成份偏移量Xdx: component offset X in irradiation
dy :照射内成份偏移量Ydy: component offset within irradiation Y
χ :照射内座標X y :照射内座標Υ (第五實施形態） 使用第一至第四實施形態的校正系統，為了最初曝光（ 未重疊之曝光），可於裝置QC將因裝置單體的載置台誤 差達至最小。此時將第一至第四實施形態所述重疊偏移 檢查結果代入校正式，並輸入裝置調整用參數，以使最 小二乘匹配殘差最小。 另外，本發明並不侷限於上述各實施形態，實施階段 中在不脫離其要旨的範圍内可進行各種變形。此外，上 述實施形態包含各種階段的發明，所揭示之複數構成要 件中藉由適當組合可取出各種發明。例如，即使從實施 -25- 200305292 (21) 發明說明續頁:! 形態所示全構成要件刪除某些構成要件，發明亦可解決 欲解決課題項内所述的課題，得到發明之功效項内所述 的功效時，可取出刪除該構成要件的構成作為發明。 發明之功效 如上所述，根據本發明，藉由重疊誤差，尤指混和與 匹配使用時的透鏡影像扭曲誤差的減少、微影光罩及微 影光罩台誤差的減少、晶圓及晶圓台誤差的減少，可提 升重疊精確度。 圖式之簡單說明 圖1為第一實施形態之曝光系統的概略構成區塊圖。 圖2為形成於用以求出透鏡影像扭曲QC資料的微影光 罩之標記的概略平面圖。 圖3為第一實施形態之曝光方法的流程圖。 圖4為使用以往之校正方法進行曝光之KrF掃描曝光裝 置中曝光區内影像扭曲照明間差的向量圖。 圖5為進行第一實施形態之曝光方法時的照射區内影 像扭曲照明間差的向量圖。 圖6為第二實施形態之曝光系統的概略構成區塊圖。 / 圖7為形成於製品產量的微影光罩照射區内之三點重 疊標記的平面圖。 圖8為第二實施形態之曝光方法的流程圖。 圖9為使用以往之曝光方法所形成曝光裝置間照射内 殘留誤差的向量圖。 圖10為由第二實施形態之校正方法所曝光之曝光裝置 -26- 200305292 (22) 發明祝明績頁,ί 間照射内殘留誤差的向量圖。 圖1 1為第三實施形態之曝光方法的流程圖。 圖1 2為由以往之曝光方法所曝光之曝光裝置間晶圓成 份的向量圖。 圖13為由第三實施形態之曝光方法所曝光之曝光裝置 間晶圓成份的向量圖。 圖式代表符號說明χ: irradiate the internal coordinates X y: irradiate the internal coordinates 第五 (Fifth embodiment) The correction system of the first to fourth embodiments is used. For the initial exposure (non-overlapping exposure), the QC of the device may vary depending on the The mounting table error is minimized. At this time, the results of the overlapping offset check described in the first to fourth embodiments are substituted into a correction formula, and the device adjustment parameters are input so that the least-squares matching residuals are minimized. The present invention is not limited to the embodiments described above, and various modifications can be made without departing from the gist of the implementation stage. In addition, the above-mentioned embodiment includes inventions in various stages, and various inventions can be extracted by appropriately combining among the disclosed plural constituent elements. For example, even if some constituent elements are deleted from the implementation of -25- 200305292 (21) invention description continuation page :! All the constituent elements shown in the form, the invention can also solve the problem described in the item to be solved and obtain the effect of the invention. In the case of the above-mentioned effect, a constitution in which the constituent elements are removed can be taken out as an invention. The effect of the invention is as described above. According to the present invention, by overlapping errors, especially reduction of lens image distortion errors during mixing and matching, reduction of lithography masks and lithography mask stage errors, wafers and wafers Reduction in stage errors can improve overlap accuracy. Brief Description of Drawings Fig. 1 is a block diagram showing a schematic configuration of an exposure system according to the first embodiment. Fig. 2 is a schematic plan view of a mark formed on a lithographic mask for obtaining a lens image distortion QC data. FIG. 3 is a flowchart of an exposure method according to the first embodiment. Fig. 4 is a vector diagram of the difference between the distorted illumination of the image in the exposure area in the KrF scanning exposure device using the conventional correction method for exposure. Fig. 5 is a vector diagram of the difference between image distortion illumination in the irradiation area when the exposure method of the first embodiment is performed. FIG. 6 is a block diagram showing a schematic configuration of an exposure system according to a second embodiment. / Figure 7 is a plan view of a three-point overlapping mark formed in a lithographic mask irradiated area of a product yield. FIG. 8 is a flowchart of an exposure method according to the second embodiment. Fig. 9 is a vector diagram of residual errors in irradiation between exposure apparatuses formed using a conventional exposure method. FIG. 10 is a vector diagram of an exposure device exposed by the correction method of the second embodiment. FIG. 11 is a flowchart of an exposure method according to a third embodiment. Fig. 12 is a vector diagram of wafer components between exposure devices exposed by a conventional exposure method. FIG. 13 is a vector diagram of wafer components between exposure apparatuses exposed by the exposure method of the third embodiment. Schematic representation of symbols
100 系統控制部 101 運算部 102 程式 103 QC履歷資料庫 104 製品產量資料庫 110 資料伺服器 111 微影光罩誤差資料庫 112 QC 資料庫 113 QC履歷資料庫 114 製品產量資料庫 121 產量箱 122 條碼讀出器 123a 第一曝光裝置 123b 第二曝光裝置 123c 第三曝光裝置 124a 第一重疊檢查裝置 124b 第二重疊檢查裝置 -27100 System control section 101 Calculation section 102 Program 103 QC history database 104 Product yield database 110 Data server 111 Lithographic mask error database 112 QC database 113 QC history database 114 Product yield database 121 Production box 122 Bar code Reader 123a first exposure device 123b second exposure device 123c third exposure device 124a first overlap inspection device 124b second overlap inspection device-27
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| TWI633401B (en) * | 2015-07-13 | 2018-08-21 | Ａｓｍｌ荷蘭公司 | Method of characterizing a deformation of a plurality of substrates, method of characterizing an overlay measurement process, lithographic apparatus, alignment method and system, device manufacturing method, and overlay measurement method and system |
| US10474045B2 (en) | 2015-07-13 | 2019-11-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI623826B (en) * | 2015-07-16 | 2018-05-11 | Ａｓｍｌ荷蘭公司 | Lithographic apparatus and device manufacturing method |
| US10139740B2 (en) | 2015-07-16 | 2018-11-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100536545B1 (en) | 2005-12-14 |
| JP3626448B2 (en) | 2005-03-09 |
| NL1022018A1 (en) | 2003-06-02 |
| US20030117599A1 (en) | 2003-06-26 |
| NL1022018C2 (en) | 2003-10-28 |
| JP2003163156A (en) | 2003-06-06 |
| CN1216403C (en) | 2005-08-24 |
| CN1421746A (en) | 2003-06-04 |
| TW569478B (en) | 2004-01-01 |
| US6842230B2 (en) | 2005-01-11 |
| KR20030043733A (en) | 2003-06-02 |
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