DE60126235D1 - Belichtungsverfahren und -system - Google Patents

Belichtungsverfahren und -system

Info

Publication number
DE60126235D1
DE60126235D1 DE60126235T DE60126235T DE60126235D1 DE 60126235 D1 DE60126235 D1 DE 60126235D1 DE 60126235 T DE60126235 T DE 60126235T DE 60126235 T DE60126235 T DE 60126235T DE 60126235 D1 DE60126235 D1 DE 60126235D1
Authority
DE
Germany
Prior art keywords
exposure method
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60126235T
Other languages
English (en)
Other versions
DE60126235T2 (de
Inventor
Toshiharu Miwa
Yasuhiro Yoshitake
Tetsuya Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE60126235D1 publication Critical patent/DE60126235D1/de
Application granted granted Critical
Publication of DE60126235T2 publication Critical patent/DE60126235T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
DE60126235T 2000-12-20 2001-11-08 Belichtungsverfahren und -system Expired - Fee Related DE60126235T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000391824 2000-12-20
JP2000391824A JP2002190443A (ja) 2000-12-20 2000-12-20 露光方法およびその露光システム

Publications (2)

Publication Number Publication Date
DE60126235D1 true DE60126235D1 (de) 2007-03-15
DE60126235T2 DE60126235T2 (de) 2007-09-06

Family

ID=18857910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60126235T Expired - Fee Related DE60126235T2 (de) 2000-12-20 2001-11-08 Belichtungsverfahren und -system

Country Status (6)

Country Link
US (2) US6653032B2 (de)
EP (1) EP1217448B1 (de)
JP (1) JP2002190443A (de)
KR (1) KR100442516B1 (de)
DE (1) DE60126235T2 (de)
TW (1) TWI238293B (de)

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JP2003324055A (ja) * 2002-04-30 2003-11-14 Canon Inc 管理システム及び装置及び方法並びに露光装置及びその制御方法
JP4018438B2 (ja) 2002-04-30 2007-12-05 キヤノン株式会社 半導体露光装置を管理する管理システム
DE10224363A1 (de) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Verfahren zur Bestimmung von Wellenfrontaberrationen
DE10230387A1 (de) * 2002-07-05 2004-01-29 Infineon Technologies Ag Verfahren zur Projektion einer ersten und wenigstens einer zweiten Maske eines Maskenansatzes auf ein Substrat
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JP4904034B2 (ja) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
KR100591130B1 (ko) * 2004-12-23 2006-06-19 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
JP2006287061A (ja) * 2005-04-01 2006-10-19 Canon Inc 露光装置及びそのパラメータ設定方法
JP4336671B2 (ja) * 2005-07-15 2009-09-30 キヤノン株式会社 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
JP2007142275A (ja) * 2005-11-21 2007-06-07 Toshiba Corp フォトマスクの判定方法、半導体装置の製造方法及びプログラム
JP4898419B2 (ja) * 2006-01-05 2012-03-14 キヤノン株式会社 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法
JP5077770B2 (ja) 2006-03-07 2012-11-21 株式会社ニコン デバイス製造方法、デバイス製造システム及び測定検査装置
KR100818424B1 (ko) * 2006-12-28 2008-04-01 동부일렉트로닉스 주식회사 노광 에너지 자동 조절 방법
JP4999161B2 (ja) * 2007-02-19 2012-08-15 新日本無線株式会社 半導体装置の製造方法
JP5127507B2 (ja) 2007-02-27 2013-01-23 キヤノン株式会社 情報処理装置、情報処理方法、プログラムおよび露光システム
US8239152B2 (en) 2007-02-27 2012-08-07 Canon Kabushiki Kaisha Information processing apparatus, information processing method, and computer program product
JP4989279B2 (ja) * 2007-04-05 2012-08-01 株式会社東芝 パラメータ値調整方法、半導体装置製造方法およびプログラム
US8975599B2 (en) * 2007-05-03 2015-03-10 Asml Netherlands B.V. Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus
JP2009071194A (ja) * 2007-09-14 2009-04-02 Canon Inc 半導体製造装置、半導体製造方法及びデバイス製造方法
JP5237690B2 (ja) 2008-05-16 2013-07-17 ルネサスエレクトロニクス株式会社 半導体デバイスの製造方法
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
CN102484084B (zh) * 2009-07-17 2014-12-10 克拉-坦科股份有限公司 使用设计和缺陷数据的扫描仪性能比较和匹配
JP5383399B2 (ja) * 2009-09-14 2014-01-08 キヤノン株式会社 管理装置、露光方法及びデバイス製造方法
DE102011005881A1 (de) * 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
JP5988569B2 (ja) * 2011-12-07 2016-09-07 キヤノン株式会社 決定方法、決定装置およびプログラム
CN103645609B (zh) * 2013-11-08 2015-09-30 上海华力微电子有限公司 一种改善光刻胶形貌的方法
KR102180027B1 (ko) 2014-09-19 2020-11-17 삼성전자 주식회사 최적의 포커스 및 도즈를 결정하기 위한 노광 공정 계측 방법 및 이를 이용한 노광 공정 모니터링 방법
US10866523B2 (en) 2015-06-16 2020-12-15 Asml Netherlands B.V. Process window tracker
US10281825B2 (en) * 2016-05-19 2019-05-07 Asml Netherlands B.V. Method of sequencing lots for a lithographic apparatus
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Also Published As

Publication number Publication date
US6653032B2 (en) 2003-11-25
KR20020050150A (ko) 2002-06-26
EP1217448A2 (de) 2002-06-26
US20020100013A1 (en) 2002-07-25
KR100442516B1 (ko) 2004-08-04
DE60126235T2 (de) 2007-09-06
US20020076629A1 (en) 2002-06-20
US6721940B2 (en) 2004-04-13
EP1217448B1 (de) 2007-01-24
TWI238293B (en) 2005-08-21
JP2002190443A (ja) 2002-07-05
EP1217448A3 (de) 2005-02-09

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