NL1016333C2 - Elektronenstraalschrijfwerkwijze, elektronenstraallithografie-inrichting, en masker gebruikt in de werkwijze en inrichting. - Google Patents
Elektronenstraalschrijfwerkwijze, elektronenstraallithografie-inrichting, en masker gebruikt in de werkwijze en inrichting. Download PDFInfo
- Publication number
- NL1016333C2 NL1016333C2 NL1016333A NL1016333A NL1016333C2 NL 1016333 C2 NL1016333 C2 NL 1016333C2 NL 1016333 A NL1016333 A NL 1016333A NL 1016333 A NL1016333 A NL 1016333A NL 1016333 C2 NL1016333 C2 NL 1016333C2
- Authority
- NL
- Netherlands
- Prior art keywords
- electron beam
- mask
- sub
- pattern
- regions
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31766—Continuous moving of wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28451299 | 1999-10-05 | ||
JP28451299A JP3360662B2 (ja) | 1999-10-05 | 1999-10-05 | 電子線ビーム描画方法および電子線ビーム描画用マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1016333A1 NL1016333A1 (nl) | 2001-04-06 |
NL1016333C2 true NL1016333C2 (nl) | 2002-10-29 |
Family
ID=17679469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1016333A NL1016333C2 (nl) | 1999-10-05 | 2000-10-05 | Elektronenstraalschrijfwerkwijze, elektronenstraallithografie-inrichting, en masker gebruikt in de werkwijze en inrichting. |
Country Status (6)
Country | Link |
---|---|
US (1) | US6503671B1 (ja) |
JP (1) | JP3360662B2 (ja) |
KR (1) | KR100389725B1 (ja) |
CN (1) | CN1290960A (ja) |
NL (1) | NL1016333C2 (ja) |
TW (1) | TW460936B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100459697B1 (ko) * | 2001-12-27 | 2004-12-04 | 삼성전자주식회사 | 가변적인 후방 산란 계수를 이용하는 전자빔 노광 방법 및이를 기록한 컴퓨터로 읽을 수 있는 기록 매체 |
FR2843462B1 (fr) | 2002-08-06 | 2004-09-24 | Thales Sa | Procede de fabrication d'une matrice active, dispositifs de visualisation electro-optiques et masque correspondant |
US7419894B2 (en) * | 2002-08-28 | 2008-09-02 | Fujitsu Limited | Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
JP4614696B2 (ja) * | 2004-06-24 | 2011-01-19 | Hoya株式会社 | グレートーンマスクの製造方法 |
JP4718145B2 (ja) * | 2004-08-31 | 2011-07-06 | 富士通株式会社 | 半導体装置及びゲート電極の製造方法 |
JP5063071B2 (ja) * | 2006-02-14 | 2012-10-31 | 株式会社ニューフレアテクノロジー | パタン作成方法及び荷電粒子ビーム描画装置 |
JP4378648B2 (ja) * | 2006-10-06 | 2009-12-09 | エルピーダメモリ株式会社 | 照射パターンデータ作成方法、マスク製造方法、及び描画システム |
JP2009237001A (ja) * | 2008-03-26 | 2009-10-15 | Fujifilm Corp | 電子ビーム描画方法、微細パターン描画システム、凹凸パターン担持体の製造方法および磁気ディスク媒体の製造方法 |
JP5258051B2 (ja) * | 2009-04-03 | 2013-08-07 | 株式会社ブイ・テクノロジー | 露光方法及び露光装置 |
JP5498106B2 (ja) * | 2009-09-15 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
JP5498105B2 (ja) | 2009-09-15 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
CN101872134B (zh) * | 2010-06-09 | 2012-05-23 | 中国科学院半导体研究所 | 一种提高电子束曝光效率的方法 |
DE102010061178A1 (de) * | 2010-12-13 | 2012-06-14 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Chromatischer Energiefilter |
JP5797454B2 (ja) * | 2011-05-20 | 2015-10-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP6107059B2 (ja) * | 2012-11-02 | 2017-04-05 | 富士通セミコンダクター株式会社 | レイアウトパターンの補正方法 |
JP5960198B2 (ja) | 2013-07-02 | 2016-08-02 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
JP2016154241A (ja) * | 2013-07-02 | 2016-08-25 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
JP7430094B2 (ja) * | 2020-03-27 | 2024-02-09 | 日本電子株式会社 | 荷電粒子線描画装置および描画方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5667923A (en) * | 1993-09-08 | 1997-09-16 | Fujitsu Limited | Charged particle beam exposure compensating proximity effect |
US5856677A (en) * | 1995-08-14 | 1999-01-05 | Nikon Corporation | Pattern projection method with charged particle beam and charged particle beam projection system |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07106216A (ja) | 1993-09-30 | 1995-04-21 | Hitachi Ltd | 偏向信号発生装置 |
JPH08236428A (ja) | 1995-03-01 | 1996-09-13 | Nikon Corp | 荷電粒子線露光方法及びそれに用いるマスク |
JP3431336B2 (ja) | 1995-03-20 | 2003-07-28 | 株式会社東芝 | 電子ビーム露光装置および電子ビーム露光での近接効果補正方法 |
JPH09180978A (ja) | 1995-12-27 | 1997-07-11 | Nikon Corp | 近接効果補正方法 |
JPH11204422A (ja) * | 1998-01-14 | 1999-07-30 | Nikon Corp | 荷電粒子線転写方法 |
-
1999
- 1999-10-05 JP JP28451299A patent/JP3360662B2/ja not_active Expired - Fee Related
-
2000
- 2000-09-29 US US09/676,847 patent/US6503671B1/en not_active Expired - Fee Related
- 2000-10-03 TW TW089120530A patent/TW460936B/zh not_active IP Right Cessation
- 2000-10-05 NL NL1016333A patent/NL1016333C2/nl not_active IP Right Cessation
- 2000-10-05 KR KR10-2000-0058532A patent/KR100389725B1/ko not_active IP Right Cessation
- 2000-10-08 CN CN00129733A patent/CN1290960A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5667923A (en) * | 1993-09-08 | 1997-09-16 | Fujitsu Limited | Charged particle beam exposure compensating proximity effect |
US5856677A (en) * | 1995-08-14 | 1999-01-05 | Nikon Corporation | Pattern projection method with charged particle beam and charged particle beam projection system |
Also Published As
Publication number | Publication date |
---|---|
NL1016333A1 (nl) | 2001-04-06 |
JP2001110700A (ja) | 2001-04-20 |
KR100389725B1 (ko) | 2003-06-27 |
CN1290960A (zh) | 2001-04-11 |
TW460936B (en) | 2001-10-21 |
US6503671B1 (en) | 2003-01-07 |
KR20010040009A (ko) | 2001-05-15 |
JP3360662B2 (ja) | 2002-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL1016333C2 (nl) | Elektronenstraalschrijfwerkwijze, elektronenstraallithografie-inrichting, en masker gebruikt in de werkwijze en inrichting. | |
TWI612553B (zh) | 多重帶電粒子束描繪裝置及多重帶電粒子束描繪方法 | |
TWI533096B (zh) | Multi - charged particle beam mapping device and multi - charged particle beam rendering method | |
KR101778280B1 (ko) | 멀티 하전 입자빔 묘화 장치 및 멀티 하전 입자빔 묘화 방법 | |
JP6438280B2 (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
KR20180035177A (ko) | 하전 입자 빔 장치 및 하전 입자 빔의 위치 이탈 보정 방법 | |
KR20190015129A (ko) | 멀티 하전 입자 빔 묘화 장치 및 멀티 하전 입자 빔 묘화 방법 | |
KR20180035178A (ko) | 전자 빔 장치 및 전자 빔의 위치 이탈 보정 방법 | |
KR101646909B1 (ko) | 반도체 소자 제조 방법 | |
JP2012510085A (ja) | 複雑な2次元インターレーススキームを使用した画像読出し/書込み方法 | |
KR102320008B1 (ko) | 멀티 하전 입자 빔 묘화 장치 및 멀티 하전 입자 빔 묘화 방법 | |
JP6627632B2 (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
TWI591675B (zh) | 資料生成裝置、能量射束描繪裝置及能量射束描繪方法 | |
JP2018073916A (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
JPH11204415A (ja) | 電子ビーム描画装置及び電子ビーム描画方法 | |
DE102012220596A1 (de) | Verfahren zum Zuordnen einer Pupillenfacette eines Pupillenfacettenspiegels einer Beleuchtungsoptik einer Projektionsbelichtungsanlage zu einer Feldfacette eines Feldfacettenspiegels der Beleuchtungsoptik | |
US20030183781A1 (en) | Method and apparatus for surface potential reflection electron mask lithography | |
JP6344594B2 (ja) | 電子ビームリソグラフィによってプレート又はマスク上に印刷されるパターンを準備する方法、対応する印刷回路設計システム、及び対応するコンピュータプログラム | |
JP3206558B2 (ja) | 電子ビーム描画用アパーチャ | |
TWI851142B (zh) | 被覆率算出方法,帶電粒子束描繪方法,被覆率算出裝置,帶電粒子束描繪裝置及程式 | |
JP2014096604A (ja) | 近接効果補正方法及びその方法を用いた電子線描画装置 | |
JP2015207608A (ja) | リソグラフィ装置、および物品の製造方法 | |
TWI847499B (zh) | 多帶電粒子束描繪裝置及多帶電粒子束描繪方法 | |
TW202410102A (zh) | 被覆率算出方法,帶電粒子束描繪方法,被覆率算出裝置,帶電粒子束描繪裝置及程式 | |
US20230187172A1 (en) | Multi-charged particle beam writing apparatus, and multi-charged particle beam writing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20020626 |
|
PD2B | A search report has been drawn up | ||
SD | Assignments of patents |
Owner name: NEC ELECTRONICS CORPORATION |
|
VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20050501 |