MY149727A - Methods and compositions for polishing silicon-containing substrates - Google Patents

Methods and compositions for polishing silicon-containing substrates

Info

Publication number
MY149727A
MY149727A MYPI2011000348A MYPI20110348A MY149727A MY 149727 A MY149727 A MY 149727A MY PI2011000348 A MYPI2011000348 A MY PI2011000348A MY PI20110348 A MYPI20110348 A MY PI20110348A MY 149727 A MY149727 A MY 149727A
Authority
MY
Malaysia
Prior art keywords
polishing
substrate
silicon
containing substrates
compositions
Prior art date
Application number
MYPI2011000348A
Other languages
English (en)
Inventor
Francesco De Rege Thesauro
Zhan Chen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY149727A publication Critical patent/MY149727A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI2011000348A 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates MY149727A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates

Publications (1)

Publication Number Publication Date
MY149727A true MY149727A (en) 2013-10-14

Family

ID=41608845

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011000348A MY149727A (en) 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates

Country Status (10)

Country Link
US (2) US8247327B2 (OSRAM)
EP (1) EP2331649B1 (OSRAM)
JP (2) JP5628802B2 (OSRAM)
KR (1) KR101396000B1 (OSRAM)
CN (1) CN102149783B (OSRAM)
IL (1) IL210029A (OSRAM)
MY (1) MY149727A (OSRAM)
SG (1) SG189801A1 (OSRAM)
TW (1) TWI398917B (OSRAM)
WO (1) WO2010014180A2 (OSRAM)

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KR102690419B1 (ko) * 2015-07-13 2024-08-01 씨엠씨 머티리얼즈 엘엘씨 유전체 기판을 가공하기 위한 방법 및 조성물
US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
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JP6960336B2 (ja) * 2015-10-23 2021-11-05 ニッタ・デュポン株式会社 研磨用組成物
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Also Published As

Publication number Publication date
WO2010014180A3 (en) 2010-04-22
IL210029A (en) 2015-07-30
CN102149783A (zh) 2011-08-10
US8247327B2 (en) 2012-08-21
JP2011530166A (ja) 2011-12-15
EP2331649A4 (en) 2013-07-03
CN102149783B (zh) 2013-06-12
EP2331649B1 (en) 2018-06-13
TW201011826A (en) 2010-03-16
JP2014209662A (ja) 2014-11-06
WO2010014180A2 (en) 2010-02-04
US20120280170A1 (en) 2012-11-08
EP2331649A2 (en) 2011-06-15
IL210029A0 (en) 2011-02-28
KR20110053438A (ko) 2011-05-23
KR101396000B1 (ko) 2014-05-16
TWI398917B (zh) 2013-06-11
JP5628802B2 (ja) 2014-11-19
JP5952352B2 (ja) 2016-07-13
SG189801A1 (en) 2013-05-31
US8597540B2 (en) 2013-12-03
US20100029181A1 (en) 2010-02-04

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