MY144187A - A cmp composition with a polymer additive for polishing noble metals - Google Patents

A cmp composition with a polymer additive for polishing noble metals

Info

Publication number
MY144187A
MY144187A MYPI20054754A MYPI20054754A MY144187A MY 144187 A MY144187 A MY 144187A MY PI20054754 A MYPI20054754 A MY PI20054754A MY PI20054754 A MYPI20054754 A MY PI20054754A MY 144187 A MY144187 A MY 144187A
Authority
MY
Malaysia
Prior art keywords
polishing
substrate
cmp composition
polymer additive
noble metal
Prior art date
Application number
MYPI20054754A
Other languages
English (en)
Inventor
Francesco De Rege Thesauro
Benjamin P Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY144187A publication Critical patent/MY144187A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20054754A 2004-10-12 2005-10-10 A cmp composition with a polymer additive for polishing noble metals MY144187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals

Publications (1)

Publication Number Publication Date
MY144187A true MY144187A (en) 2011-08-15

Family

ID=35677420

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20054754A MY144187A (en) 2004-10-12 2005-10-10 A cmp composition with a polymer additive for polishing noble metals

Country Status (9)

Country Link
US (1) US7563383B2 (OSRAM)
EP (1) EP1799785A2 (OSRAM)
JP (1) JP5583888B2 (OSRAM)
KR (1) KR101128551B1 (OSRAM)
CN (1) CN101040021B (OSRAM)
IL (1) IL182170A (OSRAM)
MY (1) MY144187A (OSRAM)
TW (1) TWI308924B (OSRAM)
WO (1) WO2006044417A2 (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070090265A (ko) * 2005-01-05 2007-09-05 니타 하스 인코포레이티드 연마슬러리
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
WO2010123300A2 (en) * 2009-04-22 2010-10-28 Lg Chem, Ltd. Slurry for chemical mechanical polishing
CN101955731A (zh) * 2009-07-13 2011-01-26 安集微电子（上海）有限公司 一种化学机械抛光液
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法
WO2011111421A1 (ja) 2010-03-12 2011-09-15 日立化成工業株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
CN103409108B (zh) 2010-11-22 2015-04-22 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
US8610280B2 (en) 2011-09-16 2013-12-17 Micron Technology, Inc. Platinum-containing constructions, and methods of forming platinum-containing constructions
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
JP5943074B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
CN104321854B (zh) 2012-05-22 2017-06-20 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
CN104073169B (zh) * 2014-06-10 2015-07-22 大庆佳昌晶能信息材料有限公司 一种用于化合物半导体的化学机械抛光剂
EP4157955A4 (en) * 2020-05-29 2024-08-21 Versum Materials US, LLC LOW PITCHING OXIDE CMP POLISHING COMPOSITIONS FOR SHALLOW TRENCH ISOLATION APPLICATIONS AND METHODS OF MAKING SAME
JP7405992B2 (ja) * 2020-07-31 2023-12-26 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
CN116875194A (zh) * 2023-05-18 2023-10-13 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5691219A (en) 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6720264B2 (en) * 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
JP2004514266A (ja) * 1999-12-14 2004-05-13 ロデール　ホールディングス　インコーポレイテッド 貴金属用研磨組成物
US6242351B1 (en) 1999-12-27 2001-06-05 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
EP1118647A1 (en) * 2000-01-18 2001-07-25 Praxair S.T. Technology, Inc. Polishing slurry
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6787061B1 (en) 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002161267A (ja) * 2000-11-27 2002-06-04 Hitachi Chem Co Ltd 白金族金属用研磨液及びそれを用いた研磨方法
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6719920B2 (en) 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6730592B2 (en) 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US7004819B2 (en) 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6821309B2 (en) 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US20030168627A1 (en) 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US20030162399A1 (en) 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US7160807B2 (en) 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7255810B2 (en) 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer

Also Published As

Publication number Publication date
US20060076317A1 (en) 2006-04-13
KR20070084096A (ko) 2007-08-24
US7563383B2 (en) 2009-07-21
WO2006044417A2 (en) 2006-04-27
CN101040021B (zh) 2012-06-20
KR101128551B1 (ko) 2012-03-23
TWI308924B (en) 2009-04-21
TW200624527A (en) 2006-07-16
IL182170A (en) 2011-12-29
IL182170A0 (en) 2007-07-24
CN101040021A (zh) 2007-09-19
WO2006044417A3 (en) 2006-08-10
JP2008516465A (ja) 2008-05-15
EP1799785A2 (en) 2007-06-27
JP5583888B2 (ja) 2014-09-03
WO2006044417B1 (en) 2006-08-31

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