JP2008516465A - 貴金属研磨のためのポリマー添加剤を伴うcmp組成物 - Google Patents
貴金属研磨のためのポリマー添加剤を伴うcmp組成物 Download PDFInfo
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- JP2008516465A JP2008516465A JP2007536823A JP2007536823A JP2008516465A JP 2008516465 A JP2008516465 A JP 2008516465A JP 2007536823 A JP2007536823 A JP 2007536823A JP 2007536823 A JP2007536823 A JP 2007536823A JP 2008516465 A JP2008516465 A JP 2008516465A
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- Prior art keywords
- polishing
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- liquid carrier
- chemical mechanical
- mechanical polishing
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- JYJVVHFRSFVEJM-UHFFFAOYSA-N iodosobenzene Chemical compound O=IC1=CC=CC=C1 JYJVVHFRSFVEJM-UHFFFAOYSA-N 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 229940001447 lactate Drugs 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-L malate(2-) Chemical compound [O-]C(=O)C(O)CC([O-])=O BJEPYKJPYRNKOW-UHFFFAOYSA-L 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VBTQNRFWXBXZQR-UHFFFAOYSA-N n-bromoacetamide Chemical compound CC(=O)NBr VBTQNRFWXBXZQR-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- LHDMBYWDIBGTAR-UHFFFAOYSA-N phenyl hypoiodite Chemical compound IOC1=CC=CC=C1 LHDMBYWDIBGTAR-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- ZONODCCBXBRQEZ-UHFFFAOYSA-N platinum tungsten Chemical compound [W].[Pt] ZONODCCBXBRQEZ-UHFFFAOYSA-N 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229940086735 succinate Drugs 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【選択図】図なし
Description
この例は、ルテニウム含有基材の研磨の際に、アルミナをドープしたシリカ砥材を含む研磨組成物にポリエチレングリコールを添加した効果を実証する。
この例は、本発明の研磨方法で観察されたルテニウムの及び酸化物の除去速度に対する異なる研磨添加剤の影響を実証した。ルテニウム及び二酸化ケイ素を含む同様の基材を異なる研磨組成物で研磨した。七つの異なる研磨組成物を使用して基材を化学機械研磨した(組成物 2A、2B、2C、2D、2E、2F、及び2G)。組成物の各々は1質量%のフュームドシリカ及び5質量%のカリウム臭化物を含み、硝酸でpH2に調整した。組成物2Aは(対照)は他の成分を全く含まなかった。組成物2B(発明)は追加的に0.025質量%のDBE−821(ジメチルシロキサン−エチレン酸化物ブロックコポリマー)を含んだ。組成物2C(発明)は追加的に0.25質量%のDBE−821を含んだ。組成物2D(比較)は追加的に0.010質量%のカリウムポリビニル硫酸塩を含んだ。組成物2E(比較)は追加的に0.10質量%のポリアクリル酸を含んだ。組成物2F(比較)は追加的に0.10質量%のナトリウムドデシル硫酸塩を含んだ。組成物2G(比較)は追加的に0.005質量%のセチルトリメチルアンモニウム臭化物を含んだ。
この例は、ルテニウムの除去速度に対するポリエチレングリコールの分子量の影響及び研磨系におけるポリエチレングリコールの濃度の影響を実証した。ルテニウム及び二酸化ケイ素を含む同様の基材を異なる研磨組成物で研磨した。七つの異なる研磨組成物を使用して基材を化学機械研磨した(組成物 3A、3B、3C、3D、3E、3F、及び3G)。組成物の各々は1質量%のDegussa社MOX−80砥材粒子(1%アルミナをドープしたシリカ)及び4質量%のカリウム臭素酸塩を含み、硝酸でpH2に調整した。研磨組成物3A(対照)は他の成分を全く含まなかった。研磨組成物3B〜3G(発明)は追加的に表3に示される分子量及び濃度のポリエチレングリコールを含んだ。
この例は、ポリビニルアルコールを含む研磨組成物又は対照研磨組成物を使用する研磨方法と対比して、本発明の研磨方法によって得られるルテニウム及び酸化物の除去速度を比較する。
Claims (21)
- 基材を研磨(polish)する方法であって:
(i)基材の表面に貴金属を含む該基材を化学機械研磨系(システム)と接触させること:
ここで該系は
(a)砥材、研磨パッド、及びそれらの組合せからなる群から選択した研磨成分、
(b)臭素酸塩、亜臭素酸塩、次亜臭素酸塩、塩素酸塩、亜塩素酸塩、次亜塩素酸塩、過塩素酸塩、次亜ヨウ素酸塩、過ヨウ素酸塩、モノペルオキシ硫酸塩、オルガノ−ハロ−オキシ化合物、希土類塩、及びそれらの組合せからなる群から選択した酸化剤、
(c)エチレン酸化物含有ポリマー、及び
(d)液体キャリア(liquid carrier)を含み、並びに
(ii)該基材を研磨するための化学機械研磨系で該貴金属の少なくとも一部を磨り減らす(abrade)こと、を含んでなる方法。 - 化学機械研磨系が4又はそれより低いpHを有する、請求項1に記載された方法。
- 化学機械研磨系が1〜4のpHを有する、請求項2に記載された方法。
- 貴金属が、ルテニウム、イリジウム、白金、パラジウム、オスミウム、レニウム、銀、金、これらの窒化物、これらの酸化物、これらの合金、及びこれらの組合せからなる群から選択される、請求項1に記載された方法。
- 化学機械研磨系が、液体キャリア及びそこに溶解又は懸濁した任意の成分の質量を基準として、0.1質量%〜10質量%の酸化剤を含む、請求項4に記載された方法。
- 酸化剤が臭素酸塩である、請求項1に記載された方法。
- 酸化剤がカリウム水素ペルオキシモノサルフェート硫酸塩である、請求項1に記載された方法。
- エチレン酸化物含有ポリマーがポリエチレングリコールである、請求項1に記載された方法。
- ポリエチレングリコールが7500〜10000ダルトンの分子量を有する、請求項8に記載された方法。
- エチレン酸化物含有ポリマーがジアルキルシロキサン−エチレン酸化物ブロックコポリマーである、請求項1に記載された方法。
- 化学機械研磨系が液体キャリア中に懸濁した砥材を含み、かつ該砥材がアルミナ、シリカ、セリア、ジルコニア、チタニア、ゲルマニア、ダイヤモンド、及びこれらの組合せからなる群から選択される、請求項1に記載された方法。
- 砥材がアルミナをドープしたシリカを含む、請求項11に記載された方法。
- 基材がケイ素酸化物を含む、請求項1に記載された方法。
- 貴金属がルテニウムである、請求項1に記載された方法。
- 液体キャリアが水を含む、請求項1に記載された方法。
- 化学機械研磨系が、研磨パッドに添付(affix)した砥材をさらに含む、請求項1に記載された方法。
- 化学機械研磨系が錯化剤をさらに含む、請求項1に記載された方法。
- 錯化剤が、エチレンジアミンテトラ酢酸、窒素含有クラウンエーテル、クエン酸、塩化物配位子、臭化物配位子、シアン化物配位子、及びホスフィン配位子からなる群から選択される、請求項17に記載された方法。
- 化学機械研磨系がpH緩衝剤をさらに含む、請求項1に記載された方法。
- 基材を研磨(polish)する方法であって:
(i)基材の表面に貴金属を含む該基材を化学機械研磨系と接触させること:
ここで該系は
(a)研磨パッド、
(b)液体キャリア、
(c)該液体キャリア中に懸濁した砥材、
(d)該液体キャリア及びそこに溶解又は懸濁した任意の成分の質量を基準として、0.1質量%〜10質量%の量で該液体キャリア中に存在する、カリウム臭素酸塩、
(e)該液体キャリア中に存在し7500〜10000ダルトンの分子量を有する、エチレン酸化物含有ポリマーエチレン酸化物含有ポリマーを含み、並びに
(ii)該基材を研磨するための化学機械研磨系で該貴金属の少なくとも一部を磨り減らす(abrade)こと、を含んでなる方法。 - 基材を研磨(polish)する方法であって:
(i)基材の表面に貴金属を含む該基材を化学機械研磨系と接触させること:
ここで該系は
(a)研磨パッド、
(b)液体キャリア、
(c)該液体キャリア中に懸濁した砥材、
(d)該液体キャリア中の酸化剤、
(e)該液体キャリア中のジアルキルシロキサン−エチレン酸化物ブロックコポリマーを含み、並びに
(ii)該基材を研磨するための化学機械研磨系で該貴金属の少なくとも一部を磨り減らす(abrade)こと、を含んでなる方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/963,108 US7563383B2 (en) | 2004-10-12 | 2004-10-12 | CMP composition with a polymer additive for polishing noble metals |
US10/963,108 | 2004-10-12 | ||
PCT/US2005/036577 WO2006044417A2 (en) | 2004-10-12 | 2005-10-11 | Cmp composition with a polymer additive for polishing noble metals |
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JP2008516465A5 JP2008516465A5 (ja) | 2011-12-15 |
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US (1) | US7563383B2 (ja) |
EP (1) | EP1799785A2 (ja) |
JP (1) | JP5583888B2 (ja) |
KR (1) | KR101128551B1 (ja) |
CN (1) | CN101040021B (ja) |
IL (1) | IL182170A (ja) |
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JP2010512030A (ja) * | 2006-12-06 | 2010-04-15 | キャボット マイクロエレクトロニクス コーポレイション | ダマシン構造における、アルミニウム/銅及びチタンを研磨するための組成物 |
JP2011119405A (ja) * | 2009-12-02 | 2011-06-16 | Shin Etsu Handotai Co Ltd | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
JP2011527643A (ja) * | 2008-07-10 | 2011-11-04 | キャボット マイクロエレクトロニクス コーポレイション | ニッケル−リンの研磨方法 |
JP2012511251A (ja) * | 2008-12-04 | 2012-05-17 | キャボット マイクロエレクトロニクス コーポレイション | 炭化ケイ素膜を選択的に研磨する方法 |
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JP5319887B2 (ja) * | 2005-01-05 | 2013-10-16 | ニッタ・ハース株式会社 | 研磨用スラリー |
US7803203B2 (en) * | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
EP2237311A4 (en) * | 2008-02-01 | 2011-11-30 | Fujimi Inc | POLISHING COMPOSITION AND POLISHING METHOD THEREFOR |
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IL182170A0 (en) | 2007-07-24 |
EP1799785A2 (en) | 2007-06-27 |
MY144187A (en) | 2011-08-15 |
WO2006044417A3 (en) | 2006-08-10 |
KR20070084096A (ko) | 2007-08-24 |
KR101128551B1 (ko) | 2012-03-23 |
WO2006044417B1 (en) | 2006-08-31 |
CN101040021A (zh) | 2007-09-19 |
TWI308924B (en) | 2009-04-21 |
WO2006044417A2 (en) | 2006-04-27 |
US7563383B2 (en) | 2009-07-21 |
IL182170A (en) | 2011-12-29 |
CN101040021B (zh) | 2012-06-20 |
US20060076317A1 (en) | 2006-04-13 |
TW200624527A (en) | 2006-07-16 |
JP5583888B2 (ja) | 2014-09-03 |
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