TWI308924B - A cmp composition with a polymer additive for polishing noble metals - Google Patents

A cmp composition with a polymer additive for polishing noble metals Download PDF

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Publication number
TWI308924B
TWI308924B TW094135402A TW94135402A TWI308924B TW I308924 B TWI308924 B TW I308924B TW 094135402 A TW094135402 A TW 094135402A TW 94135402 A TW94135402 A TW 94135402A TW I308924 B TWI308924 B TW I308924B
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
liquid carrier
weight
chemical mechanical
Prior art date
Application number
TW094135402A
Other languages
English (en)
Chinese (zh)
Other versions
TW200624527A (en
Inventor
Rege Thesauro Francesco De
Benjamin P Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200624527A publication Critical patent/TW200624527A/zh
Application granted granted Critical
Publication of TWI308924B publication Critical patent/TWI308924B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094135402A 2004-10-12 2005-10-11 A cmp composition with a polymer additive for polishing noble metals TWI308924B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals

Publications (2)

Publication Number Publication Date
TW200624527A TW200624527A (en) 2006-07-16
TWI308924B true TWI308924B (en) 2009-04-21

Family

ID=35677420

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094135402A TWI308924B (en) 2004-10-12 2005-10-11 A cmp composition with a polymer additive for polishing noble metals

Country Status (9)

Country Link
US (1) US7563383B2 (OSRAM)
EP (1) EP1799785A2 (OSRAM)
JP (1) JP5583888B2 (OSRAM)
KR (1) KR101128551B1 (OSRAM)
CN (1) CN101040021B (OSRAM)
IL (1) IL182170A (OSRAM)
MY (1) MY144187A (OSRAM)
TW (1) TWI308924B (OSRAM)
WO (1) WO2006044417A2 (OSRAM)

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KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
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US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
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KR102034328B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
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IL298552A (en) * 2020-05-29 2023-01-01 Versum Mat Us Llc cmp polishing compositions with few oxides for shallow trench insulation applications and methods for their preparation
KR102778825B1 (ko) * 2020-07-31 2025-03-13 후지필름 가부시키가이샤 약액, 약액 수용체, 기판의 처리 방법
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
CN116875194A (zh) * 2023-05-18 2023-10-13 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

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Also Published As

Publication number Publication date
KR20070084096A (ko) 2007-08-24
CN101040021B (zh) 2012-06-20
EP1799785A2 (en) 2007-06-27
JP5583888B2 (ja) 2014-09-03
MY144187A (en) 2011-08-15
KR101128551B1 (ko) 2012-03-23
US7563383B2 (en) 2009-07-21
WO2006044417B1 (en) 2006-08-31
CN101040021A (zh) 2007-09-19
IL182170A (en) 2011-12-29
JP2008516465A (ja) 2008-05-15
US20060076317A1 (en) 2006-04-13
WO2006044417A3 (en) 2006-08-10
WO2006044417A2 (en) 2006-04-27
TW200624527A (en) 2006-07-16
IL182170A0 (en) 2007-07-24

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MM4A Annulment or lapse of patent due to non-payment of fees