JP5583888B2 - 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物 - Google Patents

貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物 Download PDF

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Publication number
JP5583888B2
JP5583888B2 JP2007536823A JP2007536823A JP5583888B2 JP 5583888 B2 JP5583888 B2 JP 5583888B2 JP 2007536823 A JP2007536823 A JP 2007536823A JP 2007536823 A JP2007536823 A JP 2007536823A JP 5583888 B2 JP5583888 B2 JP 5583888B2
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JP
Japan
Prior art keywords
polishing
chemical mechanical
substrate
liquid carrier
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2007536823A
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English (en)
Japanese (ja)
Other versions
JP2008516465A5 (OSRAM
JP2008516465A (ja
Inventor
ルージュ テサウロ，フランチェスコ デ
バイエル，ベンジャミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2008516465A publication Critical patent/JP2008516465A/ja
Publication of JP2008516465A5 publication Critical patent/JP2008516465A5/ja
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Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007536823A 2004-10-12 2005-10-11 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物 Expired - Fee Related JP5583888B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/963,108 US7563383B2 (en) 2004-10-12 2004-10-12 CMP composition with a polymer additive for polishing noble metals
US10/963,108 2004-10-12
PCT/US2005/036577 WO2006044417A2 (en) 2004-10-12 2005-10-11 Cmp composition with a polymer additive for polishing noble metals

Publications (3)

Publication Number Publication Date
JP2008516465A JP2008516465A (ja) 2008-05-15
JP2008516465A5 JP2008516465A5 (OSRAM) 2011-12-15
JP5583888B2 true JP5583888B2 (ja) 2014-09-03

Family

ID=35677420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007536823A Expired - Fee Related JP5583888B2 (ja) 2004-10-12 2005-10-11 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物

Country Status (9)

Country Link
US (1) US7563383B2 (OSRAM)
EP (1) EP1799785A2 (OSRAM)
JP (1) JP5583888B2 (OSRAM)
KR (1) KR101128551B1 (OSRAM)
CN (1) CN101040021B (OSRAM)
IL (1) IL182170A (OSRAM)
MY (1) MY144187A (OSRAM)
TW (1) TWI308924B (OSRAM)
WO (1) WO2006044417A2 (OSRAM)

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US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
WO2010123300A2 (en) * 2009-04-22 2010-10-28 Lg Chem, Ltd. Slurry for chemical mechanical polishing
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CN103409108B (zh) 2010-11-22 2015-04-22 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
US8610280B2 (en) 2011-09-16 2013-12-17 Micron Technology, Inc. Platinum-containing constructions, and methods of forming platinum-containing constructions
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JP5943074B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
CN104321854B (zh) 2012-05-22 2017-06-20 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
CN104073169B (zh) * 2014-06-10 2015-07-22 大庆佳昌晶能信息材料有限公司 一种用于化合物半导体的化学机械抛光剂
EP4157955A4 (en) * 2020-05-29 2024-08-21 Versum Materials US, LLC LOW PITCHING OXIDE CMP POLISHING COMPOSITIONS FOR SHALLOW TRENCH ISOLATION APPLICATIONS AND METHODS OF MAKING SAME
JP7405992B2 (ja) * 2020-07-31 2023-12-26 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
CN116875194A (zh) * 2023-05-18 2023-10-13 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用

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Also Published As

Publication number Publication date
US20060076317A1 (en) 2006-04-13
KR20070084096A (ko) 2007-08-24
US7563383B2 (en) 2009-07-21
WO2006044417A2 (en) 2006-04-27
CN101040021B (zh) 2012-06-20
KR101128551B1 (ko) 2012-03-23
TWI308924B (en) 2009-04-21
MY144187A (en) 2011-08-15
TW200624527A (en) 2006-07-16
IL182170A (en) 2011-12-29
IL182170A0 (en) 2007-07-24
CN101040021A (zh) 2007-09-19
WO2006044417A3 (en) 2006-08-10
JP2008516465A (ja) 2008-05-15
EP1799785A2 (en) 2007-06-27
WO2006044417B1 (en) 2006-08-31

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