MX384166B - Dispositivo semiconductor y método de fabricación del mismo. - Google Patents

Dispositivo semiconductor y método de fabricación del mismo.

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Publication number
MX384166B
MX384166B MX2019009532A MX2019009532A MX384166B MX 384166 B MX384166 B MX 384166B MX 2019009532 A MX2019009532 A MX 2019009532A MX 2019009532 A MX2019009532 A MX 2019009532A MX 384166 B MX384166 B MX 384166B
Authority
MX
Mexico
Prior art keywords
region
conduction type
electric conduction
drift region
base board
Prior art date
Application number
MX2019009532A
Other languages
English (en)
Other versions
MX2019009532A (es
Inventor
Keisuke Takemoto
Ryota Tanaka
Tetsuya Hayashi
Wei Ni
Yasuaki Hayami
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor filed Critical Nissan Motor
Publication of MX2019009532A publication Critical patent/MX2019009532A/es
Publication of MX384166B publication Critical patent/MX384166B/es

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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
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    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
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    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
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Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Se incluyen una primera región (4) de deriva del primer tipo de conductividad formada en una primera superficie principal de un sustrato (1), y una segunda región (41) de deriva del primer tipo de conductividad formada en la primera superficie principal del sustrato (1), la segunda región de deriva formada para llegar a una posición más profunda del sustrato (1) que una posición de la primera región (4) de deriva. Se incluyen adicionalmente una región de pozo del segundo tipo de conductividad en contacto con la segunda región de deriva, una región de fuente del primer tipo de conductividad formada para extenderse en una dirección perpendicular a una superficie de la región de pozo, y una región de drenaje del primer tipo de conductividad separada de la región de pozo, la región de drenaje formada para extenderse en una dirección perpendicular a una superficie de la primera región de deriva. Debido a que una trayectoria de flujo de los electrones después de pasar a través de un canal puede ser ensanchada, una resistencia puede ser reducida.
MX2019009532A 2017-02-14 2017-02-14 Dispositivo semiconductor y método de fabricación del mismo. MX384166B (es)

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PCT/JP2017/005333 WO2018150467A1 (ja) 2017-02-14 2017-02-14 半導体装置および半導体装置の製造方法

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MX384166B true MX384166B (es) 2025-03-14

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EP (1) EP3584824A4 (es)
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KR (1) KR102056037B1 (es)
CN (1) CN110291620B (es)
BR (1) BR112019016822A2 (es)
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JP7354029B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、電源回路、及び、コンピュータ
US11894457B2 (en) * 2020-05-09 2024-02-06 Joulwatt Technology Co., Ltd. Semiconductor device and manufacturing method thereof
CN114078707B (zh) * 2020-08-21 2024-09-06 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
JP7579673B2 (ja) * 2020-11-02 2024-11-08 日産自動車株式会社 半導体装置およびその製造方法
JP7579687B2 (ja) * 2020-12-01 2024-11-08 日産自動車株式会社 半導体装置及びその製造方法
EP4258363A4 (en) * 2020-12-01 2024-02-14 Nissan Motor Co., Ltd. Semiconductor device, and manufacturing method for same
CN113394291A (zh) * 2021-04-29 2021-09-14 电子科技大学 横向功率半导体器件
CN115706163B (zh) * 2021-08-05 2026-04-14 联华电子股份有限公司 高压晶体管结构及其制造方法
JP7843145B2 (ja) * 2022-01-19 2026-04-09 日産自動車株式会社 半導体装置及びその製造方法
CN117238876B (zh) * 2023-09-19 2024-05-31 先之科半导体科技(东莞)有限公司 一种可降低隧穿漏电流的mos晶体管

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US20200020775A1 (en) 2020-01-16
BR112019016822A2 (pt) 2020-04-07
EP3584824A1 (en) 2019-12-25
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