MX2010009471A - Metodo para formar una estructura de cruce de tunel magnetico. - Google Patents

Metodo para formar una estructura de cruce de tunel magnetico.

Info

Publication number
MX2010009471A
MX2010009471A MX2010009471A MX2010009471A MX2010009471A MX 2010009471 A MX2010009471 A MX 2010009471A MX 2010009471 A MX2010009471 A MX 2010009471A MX 2010009471 A MX2010009471 A MX 2010009471A MX 2010009471 A MX2010009471 A MX 2010009471A
Authority
MX
Mexico
Prior art keywords
forming
tunnel junction
magnetic tunnel
mtj
junction structure
Prior art date
Application number
MX2010009471A
Other languages
English (en)
Inventor
Xia Li
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40640358&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MX2010009471(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of MX2010009471A publication Critical patent/MX2010009471A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)

Abstract

En una modalidad ilustrativa particular, se describe un método para formar un dispositivo de cruce de túnel magnético (MTJ) que incluye formar una fosa (1514) en un substrato (1400); el método además incluye depositar una estructura de cruce de túnel magnético (MTJ) (1516) dentro de la fosa; la estructura MTJ incluye un electrodo inferior (1518); una capa fija, una capa barrera de túnel, una capa libre, y un electrodo superior (1522); el método también incluye aplanar la estructura MTJ; en un ejemplo particular, la estructura MTJ es aplanada utilizando un proceso de Aplanado Químico Mecánico (CMP).
MX2010009471A 2008-03-04 2009-02-23 Metodo para formar una estructura de cruce de tunel magnetico. MX2010009471A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/041,957 US7579197B1 (en) 2008-03-04 2008-03-04 Method of forming a magnetic tunnel junction structure
PCT/US2009/034836 WO2009111197A1 (en) 2008-03-04 2009-02-23 Method of forming a magnetic tunnel junction structure

Publications (1)

Publication Number Publication Date
MX2010009471A true MX2010009471A (es) 2010-09-28

Family

ID=40640358

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2010009471A MX2010009471A (es) 2008-03-04 2009-02-23 Metodo para formar una estructura de cruce de tunel magnetico.

Country Status (12)

Country Link
US (1) US7579197B1 (es)
EP (3) EP2410588B1 (es)
JP (1) JP5450460B2 (es)
KR (2) KR101504613B1 (es)
CN (1) CN101960630B (es)
BR (1) BRPI0908753B1 (es)
CA (3) CA2896421C (es)
ES (1) ES2540876T3 (es)
MX (1) MX2010009471A (es)
RU (1) RU2459317C2 (es)
TW (1) TWI383526B (es)
WO (1) WO2009111197A1 (es)

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US9437811B2 (en) * 2014-12-05 2016-09-06 Shanghai Ciyu Information Technologies Co., Ltd. Method for making a magnetic random access memory element with small dimension and high quality
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KR102369523B1 (ko) * 2015-09-08 2022-03-03 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
US9972771B2 (en) * 2016-03-24 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM devices and methods of forming the same
US10680172B2 (en) * 2017-11-13 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive random access memory device
CN107833588B (zh) * 2017-11-16 2018-12-14 长江存储科技有限责任公司 一种新型3d自旋转移矩mram存储器的制备方法及存储器
US10636964B2 (en) * 2018-03-30 2020-04-28 Applied Materials, Inc. Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
WO2019204185A1 (en) * 2018-04-18 2019-10-24 Applied Materials, Inc. Two piece shutter disk assembly with self-centering feature
US10741748B2 (en) 2018-06-25 2020-08-11 International Business Machines Corporation Back end of line metallization structures
US11386320B2 (en) 2019-03-06 2022-07-12 International Business Machines Corporation Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
US11165017B2 (en) * 2019-03-15 2021-11-02 International Business Machines Corporation Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield
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Also Published As

Publication number Publication date
JP2011514676A (ja) 2011-05-06
CN101960630B (zh) 2013-12-04
RU2010140357A (ru) 2012-04-10
CA2716630A1 (en) 2009-09-11
EP2410588B1 (en) 2015-04-01
US20090227045A1 (en) 2009-09-10
TWI383526B (zh) 2013-01-21
KR20130043237A (ko) 2013-04-29
TW201004006A (en) 2010-01-16
JP5450460B2 (ja) 2014-03-26
CN101960630A (zh) 2011-01-26
KR101575852B1 (ko) 2015-12-08
CA2896421A1 (en) 2009-09-11
ES2540876T3 (es) 2015-07-14
BRPI0908753B1 (pt) 2019-05-07
RU2459317C2 (ru) 2012-08-20
EP2410588A2 (en) 2012-01-25
CA2716630C (en) 2018-03-06
EP2410588A3 (en) 2012-03-21
CA2896421C (en) 2016-03-29
EP2263271A1 (en) 2010-12-22
KR20100126784A (ko) 2010-12-02
WO2009111197A1 (en) 2009-09-11
EP2804230A1 (en) 2014-11-19
BRPI0908753A2 (pt) 2018-03-27
CA2991389A1 (en) 2009-09-11
KR101504613B1 (ko) 2015-03-23
US7579197B1 (en) 2009-08-25

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