WO2008105372A1 - 磁気記憶装置の製造方法および磁気記憶装置 - Google Patents
磁気記憶装置の製造方法および磁気記憶装置 Download PDFInfo
- Publication number
- WO2008105372A1 WO2008105372A1 PCT/JP2008/053197 JP2008053197W WO2008105372A1 WO 2008105372 A1 WO2008105372 A1 WO 2008105372A1 JP 2008053197 W JP2008053197 W JP 2008053197W WO 2008105372 A1 WO2008105372 A1 WO 2008105372A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- opening
- storage device
- magnetic storage
- insulating film
- forming
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
TMR素子を含む磁気記憶装置の製造方法は、配線層が設けられた層間絶縁膜の上に、絶縁膜を形成する工程と、絶縁膜に、配線層が露出するように開口部を形成する開口工程と、開口部を埋めるように、絶縁層上に金属層を形成する金属層形成工程と、CMP法を用いて絶縁層上の金属層を研磨除去し、開口部内に残った金属層を下部電極とするCMP工程と、下部電極上にTMR素子を形成する工程とを含む。また、磁気記憶装置は、配線層を備えた層間絶縁膜と、層間絶縁膜の上に設けられた絶縁膜と、絶縁膜に、配線層が露出するように設けられた開口部と、開口部の内面を覆うように設けられたバリアメタル層と、開口部を埋めるように、バリアメタル層上に設けられた下部電極と、下部電極に設けられたTMR素子とを含む。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/528,854 US8546151B2 (en) | 2007-02-27 | 2008-02-25 | Method for manufacturing magnetic storage device and magnetic storage device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007046776A JP5080102B2 (ja) | 2007-02-27 | 2007-02-27 | 磁気記憶装置の製造方法および磁気記憶装置 |
JP2007-046776 | 2007-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105372A1 true WO2008105372A1 (ja) | 2008-09-04 |
Family
ID=39721204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053197 WO2008105372A1 (ja) | 2007-02-27 | 2008-02-25 | 磁気記憶装置の製造方法および磁気記憶装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8546151B2 (ja) |
JP (1) | JP5080102B2 (ja) |
TW (1) | TWI462233B (ja) |
WO (1) | WO2008105372A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011088359A1 (en) * | 2010-01-15 | 2011-07-21 | Qualcomm Incorporated | Magnetic tunnel junction on planarized electrode |
CN113272983A (zh) * | 2018-11-20 | 2021-08-17 | 应用材料公司 | 自旋轨道矩磁阻式随机存取存储器及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5527649B2 (ja) * | 2009-08-28 | 2014-06-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP2652791B1 (en) | 2010-12-17 | 2017-03-01 | Everspin Technologies, Inc. | Magnetic random access memory integration having improved scaling |
TWI420127B (zh) * | 2011-07-05 | 2013-12-21 | Voltafield Technology Corp | 穿隧式磁阻感測器 |
TWI445225B (zh) * | 2011-11-07 | 2014-07-11 | Voltafield Technology Corp | 磁阻元件結構形成方法 |
CN104752605A (zh) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
US9865798B2 (en) * | 2015-02-24 | 2018-01-09 | Qualcomm Incorporated | Electrode structure for resistive memory device |
KR102399342B1 (ko) * | 2015-08-21 | 2022-05-19 | 삼성전자주식회사 | 메모리 장치 및 그 제조 방법 |
KR102409755B1 (ko) * | 2015-09-30 | 2022-06-16 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
US10164169B2 (en) * | 2016-09-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device having a single bottom electrode layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004514286A (ja) * | 2000-11-15 | 2004-05-13 | モトローラ・インコーポレイテッド | 自己配列磁気クラッド書き込み線およびその方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3677455B2 (ja) * | 2001-02-13 | 2005-08-03 | Necエレクトロニクス株式会社 | 不揮発性磁気記憶装置およびその製造方法 |
US6531371B2 (en) * | 2001-06-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | Electrically programmable resistance cross point memory |
JP2004119478A (ja) | 2002-09-24 | 2004-04-15 | Renesas Technology Corp | 半導体記憶装置、不揮発性記憶装置および磁気記憶装置 |
JP4829502B2 (ja) * | 2005-01-11 | 2011-12-07 | シャープ株式会社 | 半導体記憶装置の製造方法 |
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2007
- 2007-02-27 JP JP2007046776A patent/JP5080102B2/ja active Active
-
2008
- 2008-02-25 WO PCT/JP2008/053197 patent/WO2008105372A1/ja active Application Filing
- 2008-02-25 US US12/528,854 patent/US8546151B2/en active Active
- 2008-02-26 TW TW097106568A patent/TWI462233B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004514286A (ja) * | 2000-11-15 | 2004-05-13 | モトローラ・インコーポレイテッド | 自己配列磁気クラッド書き込み線およびその方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011088359A1 (en) * | 2010-01-15 | 2011-07-21 | Qualcomm Incorporated | Magnetic tunnel junction on planarized electrode |
US8681536B2 (en) | 2010-01-15 | 2014-03-25 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) on planarized electrode |
KR101386182B1 (ko) | 2010-01-15 | 2014-04-17 | 퀄컴 인코포레이티드 | 평탄화된 전극 상의 자기 터널 접합 |
US9082962B2 (en) | 2010-01-15 | 2015-07-14 | Qualcomm Incorporated | Magnetic Tunnel Junction (MTJ) on planarized electrode |
CN113272983A (zh) * | 2018-11-20 | 2021-08-17 | 应用材料公司 | 自旋轨道矩磁阻式随机存取存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI462233B (zh) | 2014-11-21 |
JP5080102B2 (ja) | 2012-11-21 |
JP2008211011A (ja) | 2008-09-11 |
US20100264501A1 (en) | 2010-10-21 |
TW200901390A (en) | 2009-01-01 |
US8546151B2 (en) | 2013-10-01 |
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