KR980005793A - 반도체장치 제조공정의 플라즈마 식각 방법 - Google Patents

반도체장치 제조공정의 플라즈마 식각 방법 Download PDF

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Publication number
KR980005793A
KR980005793A KR1019960021026A KR19960021026A KR980005793A KR 980005793 A KR980005793 A KR 980005793A KR 1019960021026 A KR1019960021026 A KR 1019960021026A KR 19960021026 A KR19960021026 A KR 19960021026A KR 980005793 A KR980005793 A KR 980005793A
Authority
KR
South Korea
Prior art keywords
etching method
plasma etching
film
silicon
manufacturing process
Prior art date
Application number
KR1019960021026A
Other languages
English (en)
Korean (ko)
Inventor
박용현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960021026A priority Critical patent/KR980005793A/ko
Priority to JP8317534A priority patent/JPH1012600A/ja
Priority to DE19654178A priority patent/DE19654178A1/de
Priority to CN96123965A priority patent/CN1168535A/zh
Priority to GB9700655A priority patent/GB2314207A/en
Priority to TW086103170A priority patent/TW327243B/zh
Publication of KR980005793A publication Critical patent/KR980005793A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960021026A 1996-06-12 1996-06-12 반도체장치 제조공정의 플라즈마 식각 방법 KR980005793A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019960021026A KR980005793A (ko) 1996-06-12 1996-06-12 반도체장치 제조공정의 플라즈마 식각 방법
JP8317534A JPH1012600A (ja) 1996-06-12 1996-11-28 半導体デバイス製造工程のプラズマエッチング方法
DE19654178A DE19654178A1 (de) 1996-06-12 1996-12-23 Verfahren zur Plasmaätzung bei der Herstellung eines Halbleiterbauelements
CN96123965A CN1168535A (zh) 1996-06-12 1996-12-24 半导体器件制造工艺中用的等离子腐蚀方法
GB9700655A GB2314207A (en) 1996-06-12 1997-01-14 Plasma etching method for a semiconductor device fabrication process
TW086103170A TW327243B (en) 1996-06-12 1997-03-14 Plasma etching method used in a process for manufacturing semiconductor device the invention relates to a plasma etching method used in a process for manufacturing a semiconductor device, which can be used to produce wafers with high integration.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960021026A KR980005793A (ko) 1996-06-12 1996-06-12 반도체장치 제조공정의 플라즈마 식각 방법

Publications (1)

Publication Number Publication Date
KR980005793A true KR980005793A (ko) 1998-03-30

Family

ID=19461604

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960021026A KR980005793A (ko) 1996-06-12 1996-06-12 반도체장치 제조공정의 플라즈마 식각 방법

Country Status (6)

Country Link
JP (1) JPH1012600A (zh)
KR (1) KR980005793A (zh)
CN (1) CN1168535A (zh)
DE (1) DE19654178A1 (zh)
GB (1) GB2314207A (zh)
TW (1) TW327243B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3650022B2 (ja) 2000-11-13 2005-05-18 三洋電機株式会社 半導体装置の製造方法
JP4593551B2 (ja) * 2006-11-15 2010-12-08 エルジー ディスプレイ カンパニー リミテッド 電子機器用基板及びその製造方法と電子機器
KR101792165B1 (ko) * 2012-12-18 2017-10-31 시스타 케미칼즈 인코포레이티드 박막 증착 반응기 및 박막 층의 반응계내 건식 세정 공정 및 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752259T2 (de) * 1986-12-19 1999-10-14 Applied Materials Bromine-Ätzverfahren für Silizium
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5304775A (en) * 1991-06-06 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
JP3118946B2 (ja) * 1992-03-28 2000-12-18 ソニー株式会社 ドライエッチング方法
JP3200949B2 (ja) * 1992-03-28 2001-08-20 ソニー株式会社 ドライエッチング方法
JP3371179B2 (ja) * 1995-05-19 2003-01-27 ソニー株式会社 配線形成方法

Also Published As

Publication number Publication date
JPH1012600A (ja) 1998-01-16
GB9700655D0 (en) 1997-03-05
DE19654178A1 (de) 1997-12-18
TW327243B (en) 1998-02-21
CN1168535A (zh) 1997-12-24
GB2314207A (en) 1997-12-17

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E902 Notification of reason for refusal
SUBM Submission of document of abandonment before or after decision of registration