KR970700370A - 박막형성법 - Google Patents
박막형성법 Download PDFInfo
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- KR970700370A KR970700370A KR1019960703564A KR19960703564A KR970700370A KR 970700370 A KR970700370 A KR 970700370A KR 1019960703564 A KR1019960703564 A KR 1019960703564A KR 19960703564 A KR19960703564 A KR 19960703564A KR 970700370 A KR970700370 A KR 970700370A
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- Prior art keywords
- gas
- thin film
- discharge
- reaction
- film formation
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- 239000010409 thin film Substances 0.000 title claims abstract 36
- 238000000034 method Methods 0.000 title claims abstract 18
- 230000015572 biosynthetic process Effects 0.000 title claims abstract 14
- 239000007789 gas Substances 0.000 claims abstract 40
- 239000012495 reaction gas Substances 0.000 claims abstract 16
- 239000000758 substrate Substances 0.000 claims abstract 7
- 239000007795 chemical reaction product Substances 0.000 claims abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 238000007599 discharging Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 238000002203 pretreatment Methods 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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Abstract
본 발명은 유리기판과 같은 피처리기체 상에 플라즈마CVD법에 의해 박막을 형성하는 박막형성법에 관한 것으로서, 가스도입구를 갖는 진공용기내에 피처리기체를 얹어 설치하고 가스도입구에서 진공용기내에 반응가스를 도입하면서 그 반응가스에 고주파전력을 인가하므로써 플라즈마를 발생시켜서 피처리기판 상에 반응가스의 반응생성물로 이루어진 박막을 형성시키는 방법에 있어서, 반응가스의 도입에 앞서 단독으로는 플라즈마 상태에서 박막형성 능력을 갖지 않는 상기 반응가스를 구성하는 성분가스 또는 복수의 반응 가스를 사용하는 경우의 반응가스이고 그 자체로는 실질적으로 박막형성 능력을 갖지 않는 가스로 이루어진 방전용 가스를 도입하면서 그 방전용 가스에 고주파전력을 인가하여 플라즈마를 발생시켜 전(前)처리를 실시하며, 그후 실질적으로 플라즈마 상태를 유지한 채로 방전용 가스를 대신해서 반응 가스를 도입하여 피처리기판 상에 박막을 형성시키고, 고진공조작을 필요로 하지 않고 박막을 형성하는 것이 가능한 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (10)
- 가스도입구를 갖는 진공용기내에 피처리기판을 설치하고 상기 가스도입구에서 상기 진공용기내로 한 종류 또는 두 종류 이상의 반응가스를 도입하면서 그 반응가스에 고주파전력을 인가하므로써 플라즈마를 발생시켜 상기 피처리기판 위에 상기 반응가스의 반응생성물로 이루어진 박막을 형성시키는 방법에 있어서, 상기 반응가스의 도입에 앞서 그 자체로는 실질적으로 박막형성능력을 갖지 않는 상기 반응가스를 구성하는 성분가스 또는 상기 두 종류이상의 반응가스에 포함되는 한 종류 이상의 가스이고, 그 자체로는 박막형성 능력을 갖지 않는 가스로 이루어진 방전용 가스를 도입하면거 그 방전용 가스에 고주파전력을 인가하여 플라즈마를 발생시켜 전(前)처리를 실시하고, 그후 실질적으로 플라즈마 상태를 유지한 채로 상기 방전용 가스를 대신해서 상기 반응가스를 도입하여 상기 피처리기판 위에 박막을 형성시키는 것을 특징으로 하는 박막형성법.
- 가스도입구를 가지고 내부에 평행평판전극을 갖는 진공용기내의 상기 평행평판전극의 한 방향의 전극에서 피처리기체를 설치하고 상기 피처리기판 위에 복수층의 박막을 형성하는 박막형성방법에 있어서, 상기 가스도입구에서 방전용 가스를 도입하면서 상기 평행평판전극에 고주파전력을 인가하여 플라즈마방전을 일으키는 공정과, 상기 방전을 유지한 채로 상기 방전용 가스를 대신해서 반응가스를 도입하여 상기 기판위에 반응가스의 반응생성물로 이루어진 박막을 형성시키는 공정을 구비하고, 상기 박막을 형성시키는 공정중, 적어도 하나의 공정이, 한 종류 또는 여러 종류의 반응가스를 사용하여 반응생성물로 이루어진 반도체박막을 형성하는 공정이고, 또한 이 공정 직전에 도입되는 방전용 가스가 그 자체로는 플라즈마 방전하에서 실질적으로 박막형성 능력을 갖지 않는 상기 반응가스를 구성하는 성분가스 또는 상기 두 종류 이상의 반응가스에 포함된 한 종류 이상의 가스이고, 그 자체로는 플라즈마 방전하에서 실질적으로 박막형성 능력을 갖지 않는 가스로 이루어진 것을 특징으로 하는 박막형성법.
- 제1항 또는 제2항에 있어서, 상기 반도체박막이 실리콘과 비산소원자로 이루어진 것이고, 상기 방전용 가스가 상기 비산소가스로 이루어진 것을 특징으로 하는 박막형성법.
- 제2항에 있어서, 상기 반도체박막이 실리콘으로 이루어지고, 상기 방전가스가 수소인 것을 특징으로 하는 박막형성법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 반응가스를 도입하고 있을 때의 플라즈마 방전시간을 1로 했을 때, 상기 방전용 가스를 도입하고 있을 때 플라즈마 방전시간이 0.1∼0.4의 범위인 것을 특징으로 하는 박막형성법.
- 제1항 내지 제5항중 어느 한 항에 있어서, 플라즈마 방전을 유지한 채로 방전용 가스를 대신해서 반응가스를 도입하므로써, 가스압력 및 방전전력을 일정하게 한 상태에서 반응가스의 도입을 실시하는 것을 특징으로 하는 박막형성법.
- 제2항 내지 제6항중 어느 한 항에 있어서, 상기 복수층의 박막이 질화실리콘-아모르파스실리콘으로 이루어진 박막인 것을 특징으로 하는 박막형성법.
- 제2항 내지 제6항중 어느 한 항에 있어서, 상기 복수층의 박막이 질화실리콘-아모르파스실리콘-질화실리콘으로 이루어진 박막인 것을 특징으로 하는 박막형성법.
- 제8항에 있어서, 상기 복수층의 박막이 아모르파스실리콘TFT(역스태거형)를 구성하는 산화실리콘-질화실리콘-아모르파스실리콘-질화실리콘박막인 것을 특징으로 하는 박막형성법.
- 제2항 내지 제9항중 어느 한 항에 있어서, 반응가스가 실란가스와 수소가스, 질소가스 및 암모니아가스에서 선택된 한 종류 또는 두 종류 이상으로 이루어지고, 방전용가스가 수소가스, 질소가스 및 암모니아가스에서 선택된 한 종류 또는 두 종류 이상으로 이루어진 것을 특징으로 하는 박막형성법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32917193 | 1993-12-27 | ||
| JP93-329171 | 1993-12-27 | ||
| PCT/JP1994/002259 WO1995018460A1 (en) | 1993-12-27 | 1994-12-27 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970700370A true KR970700370A (ko) | 1997-01-08 |
| KR100241817B1 KR100241817B1 (ko) | 2000-02-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960703564A KR100241817B1 (ko) | 1993-12-27 | 1994-12-27 | 박막형성법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6224950B1 (ko) |
| KR (1) | KR100241817B1 (ko) |
| TW (1) | TW293184B (ko) |
| WO (1) | WO1995018460A1 (ko) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596653B2 (en) * | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
| US6740601B2 (en) * | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
| US6610605B2 (en) | 2001-06-28 | 2003-08-26 | Intel Corporation | Method and apparatus for fabricating encapsulated micro-channels in a substrate |
| KR100472518B1 (ko) * | 2002-09-30 | 2005-03-10 | 주식회사 유진테크 | 싱글 챔버식 화학 기상증착 장치를 이용한 질화막 증착방법 |
| US7172792B2 (en) * | 2002-12-20 | 2007-02-06 | Applied Materials, Inc. | Method for forming a high quality low temperature silicon nitride film |
| US7365029B2 (en) * | 2002-12-20 | 2008-04-29 | Applied Materials, Inc. | Method for silicon nitride chemical vapor deposition |
| US7972663B2 (en) * | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
| US6808748B2 (en) * | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
| US6958112B2 (en) * | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
| US6903031B2 (en) * | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
| US20050260356A1 (en) * | 2004-05-18 | 2005-11-24 | Applied Materials, Inc. | Microcontamination abatement in semiconductor processing |
| US7229931B2 (en) * | 2004-06-16 | 2007-06-12 | Applied Materials, Inc. | Oxygen plasma treatment for enhanced HDP-CVD gapfill |
| US7183227B1 (en) | 2004-07-01 | 2007-02-27 | Applied Materials, Inc. | Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas |
| US7087536B2 (en) * | 2004-09-01 | 2006-08-08 | Applied Materials | Silicon oxide gapfill deposition using liquid precursors |
| KR100745130B1 (ko) * | 2006-02-09 | 2007-08-01 | 삼성전자주식회사 | 박막 증착 장치 및 방법 |
| JP5058909B2 (ja) | 2007-08-17 | 2012-10-24 | 株式会社半導体エネルギー研究所 | プラズマｃｖｄ装置及び薄膜トランジスタの作製方法 |
| JP5331407B2 (ja) * | 2007-08-17 | 2013-10-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7678715B2 (en) * | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
| US8247315B2 (en) * | 2008-03-17 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method for manufacturing semiconductor device |
| JP5324966B2 (ja) * | 2009-03-06 | 2013-10-23 | 三菱重工業株式会社 | 光電変換装置の製造方法及び製膜装置 |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| JP6410622B2 (ja) * | 2014-03-11 | 2018-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置及び成膜方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310614A (en) | 1979-03-19 | 1982-01-12 | Xerox Corporation | Method and apparatus for pretreating and depositing thin films on substrates |
| JPS60182127A (ja) * | 1984-02-29 | 1985-09-17 | Toshiba Corp | 光励起反応装置 |
| JPS6379970A (ja) | 1986-09-24 | 1988-04-09 | Agency Of Ind Science & Technol | プラズマｃｖｄ法による高密着性薄膜形成方法 |
| US4895734A (en) * | 1987-03-31 | 1990-01-23 | Hitachi Chemical Company, Ltd. | Process for forming insulating film used in thin film electroluminescent device |
| JPH03120822A (ja) * | 1989-10-04 | 1991-05-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0435021A (ja) * | 1990-05-31 | 1992-02-05 | Tonen Corp | 多結晶シリコン薄膜の成長方法 |
| JP3120822B2 (ja) | 1991-03-25 | 2000-12-25 | ブラザー工業株式会社 | 文書作成装置 |
| JPH0532483A (ja) * | 1991-05-24 | 1993-02-09 | Sumitomo Metal Ind Ltd | 気相成長方法及びプラズマプロセス装置 |
| JPH04367221A (ja) * | 1991-06-14 | 1992-12-18 | Canon Inc | 非単結晶シリコン膜の成膜方法及びその装置 |
| US5211995A (en) * | 1991-09-30 | 1993-05-18 | Manfred R. Kuehnle | Method of protecting an organic surface by deposition of an inorganic refractory coating thereon |
| DE69408405T2 (de) * | 1993-11-11 | 1998-08-20 | Nissin Electric Co Ltd | Plasma-CVD-Verfahren und Vorrichtung |
-
1994
- 1994-12-27 WO PCT/JP1994/002259 patent/WO1995018460A1/ja active Application Filing
- 1994-12-27 KR KR1019960703564A patent/KR100241817B1/ko not_active IP Right Cessation
-
1995
- 1995-03-01 TW TW084101998A patent/TW293184B/zh not_active IP Right Cessation
-
1996
- 1996-06-27 US US08/672,216 patent/US6224950B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW293184B (ko) | 1996-12-11 |
| WO1995018460A1 (en) | 1995-07-06 |
| US6224950B1 (en) | 2001-05-01 |
| KR100241817B1 (ko) | 2000-02-01 |
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